Datasheet RF2155, RF2155PCBA Datasheet (RF Micro Devices)

RF2155

2

3V PROGRAMMABLE GAIN POWER AMPLIF IER

Typical Applications

• Analog Communication Systems

• 900MHz Spread Spectrum Systems

• 400MHz Industrial Radios

Product Description

The RF2155 is a 3V medium power programmable gain
amplifierIC.Thedeviceismanufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in analog cellular phone transmitters or ISM
applications operating at 915MHz. The device is self-con­tained with the exception of the output matching network
and power supply feed line. A two-bit digital control pro­vides 4 levels of power control, in 8dB steps.

• Driver Stage for Higher Power Applications

• 3V Applications

-A-

0.009

0.004

0.050

8° MAX

0° MIN

0.392

0.386

0.158

0.150

0.244

0.230

0.021

0.014

0.069

0.064

0.060

0.054

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

NC

VCC1

VCC2

GND

GND

GND1

RF IN

PD

ü

SiGe HBT

1

2

3

4

5

6

7

8

Si CMOS

16

15

14

13

12

11

10

9

G16

G8

RF OUT

GND

GND

RF OUT

NC

NC

Functional Block Diagram

0.010

0.035

0.008

0.016

Package Style: Standard Batwing

Features

• Single 3V Supply

• 500mW CW Output Power

• 31dB Small Signal Gain

• Up to 60% Efficiency

• Digitally Controlled Output Power

• 430MHz to 930MHz Frequency Range

Ordering Information

RF2155 3V Programmable Gain PowerAmplifier
RF2155 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev B3 010417

2-179

2

RF2155

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +5.5 V
Power Down Voltage (VPD) -0.5 to +3.3 V
DC Supply Current 500 mA

Input RF Power +10 dBm
Output Load VSWR 10:1
Ambient Operating Temperature -30 to +85 °C
Storage Temperature -40 to +150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Parameter

Overall

POWER AMPLIFIERS

Frequency Range 430 to 930 MHz
Maximum CW Output Power 450 mW V

Small Signal Gain 31 dB
Second Harmonic -30 dBc Without external second harmonic trap
Third Harmonic -40 dBc
Fourth Harmonic -36 dBc
Input VSWR 2:1 All gain settings
CW Efficiency 50 56 % G16=“high”, G8=“high”, P

Output Load VSWR 6:1 Spurious<-60dBc

Min. Typ. Max.

Specification

300 mW V

Unit Condition

T=25°C, VCC=3.6V,VPD=3.0V,
Z

=13Ω,PIN=0dBm,Freq=915MHz

LOAD

=3.6V

CC

=3.0V

CC

Power Control

Power Down “ON” 2.7 2.8 3.0 V Voltagesupplied to the input
Power Down “OFF” 0 0.5 0.8 V Voltage supplied to the input
PD Input Current 3.7 5.0 mA Only in “ON” state
G16, G8 “ON” 2.2 2.5 3.0 V Voltage supplied to the input
G16, G8 “OFF” 0 0.3 0. 5 V Voltage supplied to the input
G16, G8 Input Current 0.8 1.0 1.6 mA Only in “ON” state
Output Power +25.5 +26.5 +28.0 dBm G16=“high”, G8=“high”, P

+16.0 +18.5 +21.0 dBm G16=“high”, G8=“low”, P

+8.0 +10.5 +13.0 dBm G16 =“low”, G8=“high”, P

-1.0 +1.5 +4.0 dBm G16=“low”, G8=“low”, P

Turn On/Off Time 100 ns

Power Supply

Power Supply Voltage 3.6 V Specifications

3.0 5.0 V Operating limits

Power Supply Current 225 300 mA G 16=“high”, G8=“high”, P

90 115 mA G16=“high”, G8=“low”, P
37 55 mA G16=“low”, G8=“high”, P
25 35 mA G16=“low”, G8=“low”, P

20 50 110 mA G16=“high”, G8=“high”, No RF In

110µA G16=“low”, G8=“low”, PD=“low”

IN

IN

=0dBm

IN

=0dBm

IN

=0dBm

IN

IN

=0dBm

IN

=0dBm

IN

=0dBm

IN

=0dBm

=0dBm

=0dBm

2-180

Rev B3 010417

RF2155

Pin Function Description Interface Schematic

1NC
2VCC1

3VCC2
4GND
5GND

6GND1
7RFIN

8PD

Not internally connected.
Positive supply for the first stage (driver) amplifier. This is an

unmatched transistor collector output. This pin should see an inductive
pathtoACground(V

tance can be achieved with a short, thin microstrip line (approximately
equivalent to 0.4nH).Atlower frequencies, the induct ance valueshould
be larger (longer microstrip line) and V

larger bypass capacitor. This inductance forms a matching network
with the amplifier stages, setting the amplifier's frequency of maximum
gain. An additional 1µF bypass capacitor in parallel with the UHF
bypass capacitor is also recommended, but placement of this compo­nent is not as cr itical. A resistor of 39Ω fromthispintopin3isneces­sary to ensure stability under extreme output VSWR conditions.

Positive supply for the bias circuits. This pin should be bypassed with a
single UHF capacitor, placed as close as possible to the package.

Ground connection. Keep traces physically short and connect immedi­ately to the ground plane for best performance.

Same as pin 4.
Ground return for the first stage; this should be connected to a via very

close to the device.
Amplifier RF input. This is a 50Ω RF input port to the amplifier. To

improve the input match over all four gain control settings, a n input
inductor of 6.8nH should be added. The amplifier does not contain
internal DC blocking and, therefore, should be externally DC blocked
before connecting to any d evice which has DC present or which con­tains a DC path to ground. A series UHF capacitor is recommended for
the DC blocking.

Powerdown control voltage. When this pin is at 0V, the device will be in
power down mode, dissipating minimum DC power. When this pin is at
3V the device will be in full power mode delivering maximum available
gain and output power capability. This pin should not, in any circum­stance, be higher than 3.3V. This pin should also have an externa l UHF
and HF bypassing capacitor.

with a UHF bypassing capacitor). This induc-

CC

shouldbebypassedwitha

CC

See pin 2.

RF IN

From Bias
Stages

PD

VCC1

To RF
Stages

2

POWER AMPLIFIERS

9NC
10 NC
11 RF OUT

12 GND
13 GND
14 RF OUT
15 G8

Rev B3 010417

Not internally connected.
Not internally connected.
Amplifier RF output. This is an unmatched collector output of the final

amplifier transistor. It is internally connected to pins 11 and 14 to pro­vide low series inductance and flexibility in output matching. Bias for
the final power amplifier output transistor must also be provided
through one of these pins. Typically, pin 14 is used to supply bias. A
transmission line of approximately 500mils length, followed by a
bypass capacitor, is adequate. This pin can also be used to create a
second harmonic trap. A UHF and large tantalum (1µF) capacitor
should be placed on the power supply side of the bias inductor. Pin 11
should be used for the RF output with a matchi n g network thatpresents
the optimum load impedance to the PA for maximum power and effi­ciency,as well as providing DC blocking at the output.

Same as pin 4.
Same as pin 4.
Same as pin 11.
RF output power gain control 8dB bit (see specification table for logic).

The control voltage at this pin should never exceed 3.3V and a logic
high should be at least 2.7V. This pin should also have an external UHF
bypassing capacitor.

Gxx

From Bias
Stages

RF OUT

VCC2

To RF
Stages

2-181

RF2155

Pin Function Description Interface Schematic

16 G16

RF output power gain control 16dB bit (see specification table for
logic). The control voltage at this pin should never exceed 3.3V and a
logic high should be at least2.7V. This pin should also have an external
UHF bypassing capacitor.

Same as pin 15.

2

Application Schematic

915 MHz

V

CC

W=20, L=180 mil

33 pF

39

Ω

POWER AMPLIFIERS

33 pF

RF In

Power Down

Board Material: FR-4 (Er=4.7)
h=30 mil

Impedances are critical at pin
2, 7, 11, and 14

33 pF

6.8 nH

1

2

3

4

5

6

7

8

33 pF

16

15

14

13

12

11

10

9

33 pF 33pF

W=20, L=570 mil

W=55, L=330 mil

16 dB Ctrl

V

CC

33 pF

50

Ω

3.9 pF

8 dB Ctrl

33 pF

RF Out

2-182

Rev B3 010417

Evaluation Board Schemati c

(Download Bill of Materials from www.rfmd.com.)

RF2155

P2-1

RF IN

J1

P1-3

C13
1

P1

1

P1-1

P1-3

C14

µ

F

1

C6

µ

F

50

Ω µ

strip

1nF

C1

33 pF

C5

33 pF

L1

6.8 nH

C9

1nF

R1

39

C4

33 pF

C3

33 pF

Ω

VB2

GND

2

PD

3

2155400 Rev -

1

2

3

4

5

6

7

8

P2-1

P2-3

P2

1

VCC
GND

2

VB1

3

strip

P2-3

P1-1

RF OUT

J2

16

15

14

13

12

11

10

9

L=570 mil,

W=20 mil

L=330 mil,

W=55 mil

C12 1 nF

C2

33 pF

C2

33 pF

C10

3.9 pF

33 pF

33 pF

50

C7

C8

Ω µ

2

POWER AMPLIFIERS

Rev B3 010417

2-183

2

RF2155

Evaluation Board Layout

Board Size 2.0” x 2.0”

POWER AMPLIFIERS

2-184

Rev B3 010417

RF2155

Pout and Icc vs. Pin, State 11

30

25

20

Pout (dBm)

15

10

5

-20 -15 -10 -5 0 5 10

(915 MHz, Vcc=3.6 V, Vpd=3.0 V)

Pout

Icc

Pin (dBm)

Pout and Icc vs. Pin, State 01

20

15

10

(915 MHz, Vcc=3.6 V, Vpd=3.0 V)

Pout

Icc

300

250

200

150

100

50

300

250

200

Pout and Icc vs. Pin, State 10

25

20

15

Icc (mA)

10

Pout (dBm)

5

0

-5

-20 -15 -10 -5 0 5 10

(915 MHz, Vcc=3.6 V, Vpd=3.0 V)

Pout

Icc

Pin (dBm)

300

250

200

150

100

50

0

2

Icc (mA)

POWER AMPLIFIERS

Pout and Icc vs. Pin, State 01

10

5

0

(915 MHz, Vcc=3.6 V, Vpd=3.0 V)

Pout

Icc

300

250

200

5

Pout (dBm)

0

-5

-10

-20 -15 -10 -5 0 5 10

Pin (dBm)

Pout and Efficiency vs. Vcc, Full Gain

(915 MHz, Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V)

30

29

28

Pout (dBm)

27

26

Pout
Efficiency

150

100

50

0

60.0

57.0

54.0

51.0

48.0

Icc (mA)

-5

Pout (dBm)

-10

-15

-20

-20 -15 -10 -5 0 5 10

150

Icc (mA)

100

50

0

Pin (dBm)

Pout vs. Temperature, All Gain Settings

30

25

20

15

10

Pout (dBm)

Efficiency (%)

5

0

(Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V)

Bit1=1;Bit2=1

Bit1=1;Bit2=0

Bit1=0;Bit2=1

Bit1=0;Bit2=0

25

3.03.54.04.55.05.5

Vcc (Volts)

Rev B3 010417

45.0

-5

-25-51535557595

Temperature (°C)

2-185

RF2155

2

Pout vs. Frequency, All Gain Settings

30

25

20

15

10

Pout (dBm)

5

0

POWER AMPLIFIERS

-5
870 880 890 900 910 920 930 940 950 960

(Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V)

Bit1=1;Bit2=1

Bit1=1;Bit2=0

Bit1=0;Bit2=1

Bit1=0;Bit2=0

Frequency (MHz)

250

200

150

Icc (mA)

100

50

0

870 880 890 900 910 920 930 940 950 960

Icc vs. Frequency, All Gain Settings

(Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V)

Bit1=1;Bit2=1

Bit1=1;Bit2=0

Bit1=0;Bit2=1

Bit1=0;Bit2=0

Frequency (MHz)

2-186

Rev B3 010417