Datasheet RF2152, RF2152PCBA-J, RF2152PCBA-N Datasheet (RF Micro Devices)

RF2152

2

Typical Applications

• 3 V CDMA/AMPS Cellular Handsets

• 3V JCDMA/TACS Cellular Handsets

• 3V TDMA/AMPS Cellular Handsets

Product Description

The RF2152 is a high-power, high-efficiency linear ampli­fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero­junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
800 MHz to 950 MHz band. The device is self-contained
with 50Ω input and the output can be easily matched to
obtain optimum power, efficiency, and linearity character­istics. The package is a PSSOP-16 with ba ckside ground.

DUAL-MODE CDMA/AMPS OR TDMA/AMPS

3V POWE R AMPLIFIER

• Spread-Spectrum Systems

• CDPD Portable Data Cards

• Portable Battery-Powered Equipment

192

2

EXPOSED
HEATSINK

.102
.110

.197
.189

.157
.150

1

.012
.008

.025

.003
.001

F

R

2/

.062
.070

8°MAX

0°MIN

.244
.228

.030

.009

.018

.008

RF

16

2

.059
.051

2

POWER AMPLIFIERS

Refer to “Handling of PSOP and P SSOP Products” on page 16-15
for special handling information.

cts

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

LTUNE

VCC1

GND1

RF IN

NOT FOR NEW DESIGNS

VCC

NC

VPD

VPD

!

SiGe HBT

1

2

3

4

5

6

Upg

7

8

BIAS

CIRCUITS

Si CMOS

16

15

14

rad

13

12

11

10

9

MODE

ed

NC

RF OUT

RF OUT

RF OUT

NC

NC

NC

r

P

ee

S

Functional Block Diagram

PACKAGE BASE

GND

u

od

Package Style: PSSOP-16

Features

• Single 3V Supply

• 28dBm Linear Output Power

• 30dB Linear Gain

• 35% Linear Efficiency

• On-board Power Down Mode

• 800MHz to 960MHz Operation

Ordering Information

RF2152 Dual-Mode CDMA/AMPS or TDMA /AMPS 3V Pow er

RF2152 PCBA-N Fully Assembled Evaluat ion Boa rd 824-849MHz
RF2152 PCBA-J Fully Assembled Evaluat ion Boa rd 877-924MHz

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA

Amplifier

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A8 001109

2-155

RF2152

2

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (RF off) +8.0 V
Supply Voltage (P
DC Supply Current 1.0 A

Mode Voltage (V
Control Voltage (VPD)+3.0V
Input RF Power +12 dBm

Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Moisture Sensitivity JEDEC LEVEL 5

POWER AMPLIFIERS

Overall

Usable Frequency Range 800 960 MHz
Typical Frequency Range 824-849

Linear Gain 28 30 33 dB Pout=28dBm
Second Harmonic (including

Max CW Output Power 31 31.5 32 dBm Tuned for CDMA
Total Efficiency (AMPS mode) 40 45 55 %
Maximum Linear Output Power

Total Linear Efficiency 30 35 38 %
Adjacent Channel Power Rejec-

Adjacent Channel Power Rejec­Input VSWR < 2:1

Output Load VSWR 10:1 No oscillations
Noise Figure 5.9 6.0 6.1 dB V

Noise Power P
P
P

Power Supply

Power Supply Voltage 3.0 3.4 5.2 V
Idle current 90 mA MODE = low Pin 16=Ground AMPS/Low

Idle current 200 mA MODE = high Pin 16=2.8V High Power
V

Turn On/Off time <100 ns
Total Current (Power down) 10 µAV

V
V
MODE “High” Voltage 2.1 2.8 2.9

MODE “Low” Voltage 0 0.5

Parameter

second harmonic trap)

(CDMA Modulation)

tion
tion

current 10 mA Pins7,8, Vpd=2.8V (Pin 7 typ. not connected,

PD

NOT FOR NEW DESIGNS

“Low” Voltage 0 0.2 V

PD

“High” Voltage 2.7 2.8 2.9 V

PD

≤31dBm) +5.2 V

OUT

)+3.0V

MODE

Specification

Min. Typ. Max.

877-925

-32 -38 -42 dBc

28 28.5 29 dBm Tuned for CDMA

-44 -46 -50 dBc ACPR@885kHz

-56 -58 -62 dBc ACPR@1980kHz

P

OUT

OUT
OUT

=15dBm

=28dBm
=31dBm

86.5

89.3

92.3

ed

rad

Upg

ee

S

DC
DC

DC
DC

u

od

r

Refer to “Han dling of PSOP an d PSSOP Pro ducts”
on page 16-15 for special handling information.

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate
at the time of this printi ng. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

Unit Condition

MHz
MHz

T=25°C, VCC=3.4V, VPD=2.8V,
Freq=824MHz to 849MHz, unless otherwise

specified

16

R

2/

2

RF

cts

=3.4V

CC

dBm
dBm
dBm

=3.4V; 30KHz BW; RX Band NP mea-

V

CC

sured from TX center band to R X center
band

Power CDMA Modes
CDMA Mode (Pout>20dBm)
I=5mA for Pin 8)

= low

PD

192

2

F

2-156

Rev A8 001109

RF2152

Pin Function Description Interface Schematic

1VCC
2LTUNE

3NC
4VCC1

5GND1

6RF IN

7 VPD

8 VPD

9NC
10 NC
11 NC
12 RF OUT

13 RF OUT
14 RF OUT

15 NC
16 MODE

Power supply for input bias circuitry. A 100 pF high frequency bypass
capacitor is recommended.

Interstage tuning. This pin will connect to a shunt inductor used for
interstage tuning. For 824 MHz to 849 MHz a 1.5n H discrete inductor is
used; for 877MHz to 925MHz a shorted transmission line presenting

0.7 nH of inductance or discrete inductor may be used. This inductor
should be placed as close to the pin as possible.

No connection. Grounding pin is recommended.
Power supply for stage 1. VCC should be fed through a 25nH or greater

inductor with a decoupling capacitor on the V
Ground for stage 1. Keep traces physically short and co nnect immedi-

ately to ground plane for best performance. This ground should be iso­lated from the backside ground contact.

RF input. An external DC blocking capacitor is required if this port is
connected to a DC path to ground or a DC voltage.

CC

side.

See pin 6.

See pin 6.

RF IN

R

Power Down control. When this pin is “low”, all circuits are shut off.
When this pin is 2.8 volts, all circuits are operating normally. V

requires a regulated 2.8 V for the amplifier to operate properly over all
specified temperature and voltage ranges. A dropping resistor from a
higher regulated voltage may be used to provide the required 2.8 V. A
100 pF high frequency bypass capaci tor is recommended.

Connect to pin 7.
No connection. Grounding pin is recommended.
No connection. Grounding pin is recommended.
No connection. Grounding pin is recommended.
RF output and power supply for the output stage. The bias for the out-

put stage is provided through this pin and pin 13. An external matching
network is required to provide the optimum load impedance; see the
application schematics for details. The first shunt cap of the matching
circuit should be placed as close to the pin as possible.

Same as pin 12. See pin 12.
Harmonic trap. This pin connects to the RF output but is used for pro-

viding a low impedance to the second harmonic of the operating fre­quency. An inductor or transmission line resonating wi th a shunt
capacitor at 2f

No connection. Grounding pin is recommended.
The mode pin allows higher efficiency operation in AMPS and low

power CDMA modes. MODE should be set “low” for highest efficiency
in AMPS/TACS and in low power (<+15 dBm) CDMA operation. MODE
should be set “high” for best linearity in high power CDMA operation.

is connected to this pin.

0

rad

ed

od

r

P

cts

u

RF

PD

2

2/

16

See pin 12.

MODE

2

F

From Bias
Stages

From Bias
Stages

192

VCC1

GND1

RF OUT

2

POWER AMPLIFIERS

Upg

Pkg

NOT FOR NEW DESIGNS

Base

GND

ee

S

Rev A8 001109

Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul­tiple vias. The pad should have a short thermal path to the ground
plane.

2-157

RF2152

V

CC

Application Schematic

824MHz to 849MHz

2

POWER AMPLIFIERS

100 pF

RF IN

VPD

47 nH

100 pF

100 pF

100 pF

1.2
nH

R3

100 pF

100 pF

1

BIAS

2

3

CIRCUITS

16

15

1 nH

14

2 pF

20 nH

MODE

192

2

F

4

5

6

13

12

9 pF 7 pF

11

2.7 nH

100 pF

2/

R

RF
OUT

16

7

8

PACKAGE BASE

10

9

RF

2

L6 may be implemented as a transmission

·

line to reduce DC losses.

·

R3 is used for bias adjustment. 0 Ω for 2.8 V

regulated supply.

All unused pins should be grounded to PC

·

board if possible.

cts

u

2-158

od

r

P

ed

rad

Upg

NOT FOR NEW DESIGNS

ee

S

Rev A8 001109

RF2152

Application Schemati c

877MHz to 924MHz

V

CC

100 pF

RF IN

VPD

47 nH

100 pF

100 pF

0.7 nH

100 pF

R3

100 pF

20 nH

100 pF

2.2 nH

2/

MODE

192

2

F

R

100 pF

RF OUT

6 pF

1

BIAS

2

3

4

5

6

CIRCUITS

16

15

1 nH

14

13

12

11

2 pF

8 pF

16

2

POWER AMPLIFIERS

2

7

8

PACKAGE BASE

10

L6 may be implemented as a transmission

·

line to reduce DC losses.

·

R3 is used for bias adjustment. 0 Ω for 2.8 V

9

RF

regulated supply.

All unused pins should be grounded to PC

·

board if possible.

cts

u

od

r

P

ed

rad

Upg

NOT FOR NEW DESIGNS

ee

S

Rev A8 001109

2-159

2

RF2152

VCC

Evaluation Board Schema t ic

824MHz to 849MHz

(Download Bill of Materials from www.rfmd.com.)

C1

µ

F

3.3

C4

100 pF

20 nH

POWER AMPLIFIERS

VPD

C2

100 pF

RF IN

C8

100 pF

L1

47 nH

3.3

C7

100 pF

50

µ

F

C3

Ω

R4 OPEN

R3

0

1.2 nH

100 pF

Ω

L2

C6

2152400A

1

BIAS

2

3

4

5

6

7

8

CIRCUITS

PACKAGE BASE

u

(PCB mat'l: FR-4;

Four Layer: 31 mil; 9 mil core)

od

r

P

100 pF

16

15

14

13

12

11

10

·

The position of C10 can be used to trade-off

efficiency and linearity.

·

9

R3 and R4 may be used for bias adjustment.

RF

cts

C15

P1-1

P1-3

C9

9 pF

1 nH

2

P1

1
2
3

C14

µ

F

3.3

R2

Ω

0

425 mil

Ω

50

16

VCC
GND
PD

C12
1 pF

2/

C10

7 pF

R

C11

100 pF

C13
1 pF

F

MODE

2

192

RF OUT

2-160

ed

rad

Upg

NOT FOR NEW DESIGNS

ee

S

Rev A8 001109

VCC

Evaluation Board Schemati c

877MHz to 924MHz

C1

3.3 µF

RF2152

C4

100 pF

20 nH

2

C2

100 pF

RF IN

VPD

C3

100 pF

L1

47 nH

50 Ω

C8

100 pF

C7

3.3 µF

(PCB mat'l: FR-4;

Four Layer: 31 mil; 9 mil core)

0.7 nH

100 pF

R4 OPEN

0 Ω

C6

R3

1

2

3

4

5

6

7

8

P

2152401-

BIAS

CIRCUITS

PACKAGE BASE

u

od

r

16

15

14

13

12

11

10

9

RF

cts

C15

100 pF

1 nH

C14

3.3 µF

R2

0

MODE

Ω

C12
1 pF

192

C13
1 pF

2

F

R

375 mil

50 Ω

2/

C9

C10

8 pF

16

2

The position of C10 can be used to trade-off

·

efficiency and linearity.

R3 and R4 may be used for bias adjustment.

·

P1

P1-1

P1-3

1
2
3

6 pF

VCC
GND
PD

C11

100 pF

POWER AMPLIFIERS

RF OUT

ed

rad

Upg

NOT FOR NEW DESIGNS

ee

S

Rev A8 001109

2-161

2

POWER AMPLIFIERS

RF2152

Evaluation Board Layout 824MHz to 849MHz

1” x 1”

Board Thickness 0.034”, Board Material FR-4, Multi-Layer

192

2

F

R

2/

16

2

RF

cts

u

od

r

P

ed

rad

Upg

NOT FOR NEW DESIGNS

ee

S

2-162

Rev A8 001109

RF2152

Evaluation Board Layout 877MHz to 924MHz

1” x 1”

R

2/

16

2

2

F

2

192

POWER AMPLIFIERS

RF

cts

u

od

r

P

ed

rad

Upg

NOT FOR NEW DESIGNS

ee

S

Rev A8 001109

2-163

RF2152

2

POWER AMPLIFIERS

ACPR (@885 kHz offset) versus Frequency

V

= 3.5 V, V

-40.0

-41.0

-42.0

-43.0

-44.0

-45.0

ACPR (dBc)

-46.0

-47.0

-48.0

-49.0

-50.0

34.0

33.5

33.0

32.5

32.0

Gain (dB)

31.5

31.0

30.5

30.0

-40.0

-41.0

-42.0

-43.0

-44.0

ACPR (dBc)

-45.0

CC

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

V

= 3.5 V, V

CC

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

ACPR (@885 kHz offset) versus Frequency

V

= 3.0 V, V

CC

NOT FOR NEW DESIGNS

ee

S

-46.0

-47.0

= 2.8 V, CDMA P

REG

Frequency (MH z)

Gain versus Fr equency

= 2.8 V, CDMA P

REG

Frequency (MH z)

= 2.8 V, CDMA P

REG

rad

Upg

= 28 dBm

OUT

= 28 dBm

OUT

= 27 dBm

OUT

Lower -30 C
Upper -30 C
Lower + 25 C
Upper +25 C
Lower +85 C

-30 C
+25 C
+85 C

ed

Lower -30 C
Upper -30 C
Lower +25 C
Upper +25 C
Lower +85 C

P

od

r

-52.0

-54.0

-56.0

-58.0

-60.0

ACPR (dBc)

-62.0

-64.0

-66.0

-68.0

40.0

39.0

38.0

37.0

36.0

35.0

PAE (%)

34.0

u

33.0

32.0

31.0

30.0

-54.0

-56.0

-58.0

-60.0

ACPR (dBc)

-62.0

-64.0

ACPR (@1980 kHz offset) versus Frequency

V

= 3.5 V, V

CC

= 2.8 V, CDMA P

REG

= 28 dBm

OUT

Lower -30 C
Upper -30 C
Lower +25 C
Upper +25 C
Lower +85 C

192

2

F

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

V

= 3.5 V, VPD = 2.8 V, CDMA P

CC

Frequency (MH z)

PAE versus Frequency

16

2

2/

OUT

R

= 28 dBm

-30 C
+25 C
+85 C

RF

cts

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

ACPR (@1908 kHz offset) versus Frequency

V

= 3.0 V, V

CC

Frequency (MH z)

= 2.8 V, CDMA P

REG

= 27 dBm

OUT

Lower -30 C
Upper -30 C
Lower +2 5 C
Upper + 2 5 C
Lower +8 5 C

2-164

-48.0

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

Frequency (MH z)

-66.0

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

Frequency (MH z)

Rev A8 001109

RF2152

V

34.0

33.5

33.0

32.5

32.0

Gain (dB)

31.5

31.0

30.5

30.0

-44.0

-45.0

-46.0

-47.0

CC

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

ACPR (@885 kHz offset) versus Frequency

V

CC

Gain versus Fr equency

= 3.0 V, V

= 5.0 V, V

= 2.8 V, CDMA P

REG

Frequency (MH z)

= 2.8 V, CDMA P

REG

= 27 dBm

OUT

= 28 dBm

OUT

Lower -30 C
Upper -30 C
Lower +25 C
Upper +25 C
Lower +85 C

-30 C
+25 C
+85 C

V

42.0

41.0

40.0

39.0

38.0

37.0

PAE (%)

36.0

35.0

34.0

33.0

32.0

-52.0

-53.0

-54.0

-55.0

CC

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

ACPR (@1908 kHz offset) versus Frequency

V

CC

PAE versus Frequency

= 3.0 V, V

= 5.0 V, V

= 2.8 V, CDMA P

REG

Frequency (MH z)

= 2.8 V, CDMA P

REG

2

RF

2/

16

OUT

R

OUT

= 27 dBm

2

F

= 28 dBm

Lower -30 C
Upper -30 C
Lower +2 5 C
Upper + 2 5 C
Lower +8 5 C

-30 C
+25 C
+85 C

2

192

POWER AMPLIFIERS

-48.0

ACPR (dBc)

-49.0

-56.0

ACPR (dBc)

cts

-57.0

u

-50.0

-51.0

-52.0

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

V

= 5.0 V, V

33.0

32.5

32.0

31.5

31.0

NOT FOR NEW DESIGNS

Gain (dB)

30.5

CC

ee

Frequency (MH z)

Gain versus Fr equency

= 2.8 V, CDMA P

REG

rad

Upg

OUT

ed

= 28 dBm

od

r

P

-30 C
+25 C
+85 C

S

30.0

29.5

29.0

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

Frequency (MH z)

-58.0

-59.0

-60.0

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

V

= 5.0 V, V

30.0

29.0

28.0

27.0

26.0

25.0

PAE (%)

24.0

23.0

22.0

21.0

20.0

CC

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

Frequency (MH z)

PAE versus Frequency

= 2.8V, CDMA P

REG

Frequency (MH z)

= 27 dBm

OUT

-30 C
+25 C
+85 C

Rev A8 001109

2-165

RF2152

2

POWER AMPLIFIERS

V

= 3.0 V, V

65.0

60.0

55.0

50.0

45.0

40.0

Gain (dB)/PAE (%)

35.0

30.0

25.0

20.0

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

40.0

38.0

36.0

34.0

32.0

Gain (dB)/PAE (%)

30.0

28.0

26.0

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

CC

V

= 5.0 V, V

CC

AMPS Mode

= 2.8 V, P

REG

Frequency (MH z)

AMPS Mode

= 2.8 V, P

REG

Frequency (MH z)

= 30.5 dBm

OUT

= 31.5 dBm

OUT

T=-30 PAE
T=25 PAE
T=85 PAE
T=-3 0 Gain
T=25 Gain

T=85 PAE
T=25 PAE
T=-30 PAE
T=-3 0 Gain
T=25 Gain

ed

P

od

r

V

= 3.5 V, V

55.0

50.0

45.0

40.0

35.0

Gain (dB)/PAE (%)

30.0

25.0

20.0

820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0

32.4

32.2

32.0

31.8

31.6

31.4

Gain (dB)

31.2

cts

u

31.0

30.8

30.6

30.4

CC

VCC = 3.5 V, V

GAIN

PAE

RF

0.0 5.0 10.0 15.0 20.0 25.0 30.0

AMPS Mode

= 2.8 V, P

REG

Frequency (MH z)

Gain/PAE versus P

= 2.8 V, Freq = 836 MHz

REG

16

2

P

(dBm)

OUT

= 31.5 dBm

OUT

R

2/

OUT

T=25 PAE
T=85 PAE
T=-30 PAE
T=-3 0 Gain
T=25 Gain

F

192

2

50.0

45.0

40.0

35.0

30.0

25.0

20.0

15.0

10.0

5.0

0.0

PAE (%)

2-166

rad

Upg

NOT FOR NEW DESIGNS

ee

S

Rev A8 001109