Datasheet RF2146, RF2146PCBA Datasheet (RF Micro Devices)

RF2146

2

Typical Applications

• 4.8V CDMA PCS Handsets

• 4.8V TDMA PCS Handsets

• 4.8V PACS PCS Handsets

Product Description

The RF2146 is a high-power, high-efficiency linear ampli­fier IC. The device is manufactured on an advanced Gal­lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 4-cell CDMA handheld digital cellular equip­ment, spread-spectrum systems, and other applications
in the 1500MHz to 2000 MHz band. The device is self­contained with 50Ω input and the output can be easily
matched to obtain optimum power, efficiency, and linear­ity characteristics.

PCS LINEAR POWER AMPLIFIER

• Driver Amplifier in Cellular Base Stations

• Portable Battery-Powered Equipment

-A-

0.020
REF

0.393

0.386

8° MAX

0° MIN

0.244

0.229

0.034

0.016

0.157

0.150

0.009

0.007

0.020

0.014

0.034
REF

NOTES:

1. Shaded lead is pin 1.

2. All dimensions are excluding mold flash.

3. Lead coplanarity - 0.004 with respect to datum "A".

4. Max deviation from package center to leadframe center - 0.004.

5. Max misalignment between top center and bottom center - 0.004.

0.008

0.004

0.068

0.064

0.068

0.053

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

VCC

GND

GND

RF IN

GND

GND

GND

GND

!

SiGe HBT

1

2

3

4

5

6

7

8

BIAS

Si CMOS

16

15

14

13

12

11

10

9

GND

GND

GND

RF OUT

RF OUT

GND

GND

PC

Functional Block Diagram

Package Style: CJ2BAT0

Features

• Single 4V to 6.5V Supply

• 28.5 dBm Linear Output Power

• 18.5dB Gain With Analog Gain Control

• 37% Linear Efficiency

• On-board Power Down Mode

• 1500MHz to 2000MHz Operation

Ordering Information

RF2146 PCS Linear Power Amplifier
RF2146 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A3 001026

2-147

2

RF2146

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (No RF) -0.5 to +8.0 V
Supply Voltage (P
Power Control Voltage (VPC) -0.5 to +5.0 or V
DC Supply Current 500 mA

Input RF Power +15 dBm
Output Load VSWR 10:1
Ambient Operating Temperature -30 to +90 °C
Storage Temperature -40 to +150 °C

<30dBm) -0.5 to +7.5 V

OUT

CC

DC
DC

V

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate
at the time of this printi ng. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

Parameter

POWER AMPLIFIERS

Overall

Usable Frequency Range 1500 to 2000 MHz
Linear Gain 18.5 19 dB
Maximum Linear Output Power 28.5 CDMA Modulation
Total Linear Efficiency 37 %
Input Power for 28 dBm

Output

Adjacent Channel Power Rejec-

tion
Input VSWR <2:1
Second Harmo n ic -35 dBc Including Second Harmonic Trap

Specification

Min. Typ. Max.

+10 dBm

-45 dBc CDMA Modulation, +28 dBm Output,

Unit Condition

T=25 °C, VCC=4.8V, VPC=3.6V,
P

=+10dBm, Freq=1880MHz

IN

At 1.25MHz Offset

Pow er Down

Off Isolation 25 dB
Turn On Time 200 ns Up to -0.5dB of Final Power
Turn Off Time 350 ns Down to +0.5dB of Final Power
Total Current TBD µA “OFF” State
V

“OFF” Voltage 0 0.2 V Threshold Voltage at Input

PC

“ON” Voltage 3.4 3.6 4.0 V Threshold Voltage at Input

V

PC

Power Supply

Power Supply Voltage 4.0 to 6.5 V Operating voltage
Current into V

Idle Current 70 mA V

pin 13 mA “ON” State

PC

PC

=3.6V, No RF Applied

2-148

Rev A3 001026

RF2146

Pin Function Description Interface Schematic

1VCC

2GND
3GND

4RF IN

5GND
6GND

7GND
8 BYP1

9PC

Power supply for the driver stage, and interstage matching. Shunt
capacitance is required on this pin. The value of the capacitance is fre­quency dependent. 4.7pF centers the gain at 1880 MHz.

Ground connection for final stage. Keep traces physically short and
connect immediately to the ground plane for best performance.

Same as pin 2.
RF input. This is a 50Ω input, but the actual input impedance depends

on the interstage matching network connected to pin 1. An external DC
blocking capacitor is required if this po rt is connected to a DC path to
ground or a DC voltage.

Ground connection for the driver stage. Keep traces physically shor t
and connect immediately to the ground plane for best performance.

Same as pin 2.
Same as pin 2.
Bypass Pin. Part of the ma tching circuit for interstage match. DC con-

nected to VCC1. Use a suitable bypass capacitor to ground. Keep
capacitor as close to pin as possible.

Power Control. When this pin is "low", all circuits are shut off. A "low" is
typically 0.5V. When this pin is "high", the part operates normally, and
the pin consumes approximately 13mA during normal operation.
This pin should never exceed 5V.

RF IN

See pin 1.

See pin 1.

PC

From Bias
Stages

VCC

To RF
Transistors

2

POWER AMPLIFIERS

10 GND
11 GND
12 RF OUT

13 RF OUT
14 GND
15 GND
16 BYP2

Same as pin 2.
Same as pin 2.
RF Output and power supply for the output stage. The two output pins

are combined, and bias voltage for the final stage is provided through
these pins. An external matching network is required to provide the
optimum load impedance; see the application schematics for details.

Same as pin 12. See pin 12.
Same as pin 2.
Same as pin 2.
Bypass Pin. Part of the ma tching circuit for interstage match. DC con-

nected to VCC1. For 1880 MHz operation, use a 3 .3pF capacitor to
ground. Keep capacitor as close to pin as possible.

See pin 1.

From Bias
Stages

RF OUT

Rev A3 001026

2-149

RF2146

Application Schematic

1880MHz

2

POWER AMPLIFIERS

VCC

VCC

RF IN

(PCB mat'l: FR-4;

Thickness: 31 mil; 28 mil core)

L=500 mil, W=20 mil

L=500 mil, W=20 mil

6.2 pF22 pF3.3 µF

1

4.7 pF22 pF3.3 µF

22 pF

22 pF

2

3

4

5

6

7

8

BIAS

Application Schematic

2150MHz

1

2

16

15

3.3 pF

16

15

14

13

12

11

10

9

1.6 pF

22 pF 3.3 µF

3.3 pF

22 pF 3.3 µF

1 nF

1/4 Wavelength Line;
L=910 mil, W=20 mil

3.3 nH

22 pF 3.3 µF

VCC

RF OUT

22 pF

PC

VCC

RF IN

2-150

(PCB mat'l: FR-4;

Thickness: 31 mil; 28 mil core)

10 pF

100 pF

3

4

5

6

7

8

BIAS

14

13

12

11

10

9

1 pF

22 pF 3.3 µF

1/4 Wavelength Line;

L=910 mil, W=20 mil

2.2 nH

1.8 pF

22 pF

RF OUT

PC

Rev A3 001026

Evaluation Board Schemati c

(Download Bill of Materials from www.rfmd.com.)

RF2146

VCC

Thickness: 31 mil; 28 mil core)

L=500 mil, W=20 mil

C20

µ

F

3.3

(PCB mat'l: FR-4;

C11

100 pF

RF IN

C1

4.7 pF

C5

100 pF

C2

100 pF

RF2146

1

2

3

4

5

6

7

8

C3

3.3 pF

16

15

14

13

12

11

10

9

100 pF

C7

3.3 pF

C4

22 pF 3.3 µF1 nF

1/4 Wavelength Line;

L=910 mil, W=20 mil

L1

3.3 nH

C19

µ

3.3

C8

100 pF

PC

F

VCC

2

RF OUT

POWER AMPLIFIERS

Rev A3 001026

2-151

2

RF2146

Evaluation Board Layout

2” x 2”

POWER AMPLIFIERS

2-152

Rev A3 001026

RF2146

30

25

20

Gain (dB)

15

10

5

-10 -5 0 5 10 15

Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz

+25°C

-30°C
+85°C

Pin (dBm)

Gain vs. Pin

Gain vs. Pin

30

25

Vpc=3.6 V, 1.88 GHz, +25°C

Vcc = 4.8 V

Vcc = 4.2 V

ACPR @ 1.25 MHz Offset vs. Pout

-40

-45

-50

ACPR (dBc)

-55

-60

-65
5 1015202530

Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz

+25°C

-30°C
+85°C

Pout (dBm)

ACPR @ 1.25 MHz Offset vs. Pout

-40

-45

Vpc=3.6 V, 1.88 GHz, +25°C

Vcc = 4.8 V

Vcc = 4.2 V

2

POWER AMPLIFIERS

20

Pout (dBm)

15

10

5

-10 -5 0 5 10 15

Pin (dBm)

Gain vs. Pin

30

25

20

Gain (dB)

15

10

Vcc=4.8 V, Vpc=3.6 V, +25°C

1.88 G Hz

1.91 G Hz

1.85 G Hz

-50

ACPR (dBc)

-55

-60

-65
5 1015202530

Pout (dBm)

ACPR @ 1.25 MHz Offset vs. Pout

-40

-45

-50

ACPR (dBc)

-55

-60

Vcc=4.8 V, Vpc=3.6 V, +25°C

1.88 G Hz

1.91 G Hz

1.85 G Hz

5

-10 -5 0 5 10 15

Pin (dBm)

Rev A3 001026

-65
5 1015202530

Pout (dBm)

2-153

RF2146

2

POWER AMPLIFIERS

30

25

20

Pout (dBm)

15

10

5

-10 -5 0 5 10 15

Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz

+25°C

-30°C
+85°C

Pin (dBm)

Pout vs. P in

Pout vs. P in

30

25

Vpc=3.6 V, 1.88 GHz, +25°C

Vcc = 4.8 V

Vcc = 4.2 V

Efficiency vs. Pout

50

40

30

20

Efficiency (%)

10

0

5 1015202530

Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz

+25°C

-30°C
+85°C

Pout (dBm)

Efficiency vs. Pout

50

40

Vpc=3.6 V, 1.88 GHz, +25°C

Vcc = 4.8 V

Vcc = 4.2 V

20

Pout (dBm)

15

10

5

-10 -5 0 5 10 15

Pin (dBm)

Pout vs. P in

30

25

20

Pout (dBm)

15

10

Vcc=4.8 V, Vpc=3.6 V, +25°C

1.88 G Hz

1.91 G Hz

1.85 G Hz

30

20

Efficiency (%)

10

0

5 1015202530

Pout (dBm)

Efficiency vs. Pout

50

40

30

20

Efficiency (%)

10

Vcc=4.8 V, Vpc=3.6 V, +25°C

1.88 G Hz

1.91 G Hz

1.85 G Hz

5

-10 -5 0 5 10 15

Pin (dBm)

2-154

0

5 1015202530

Pout (dBm)

Rev A3 001026