Datasheet RF2145, RF2145PCBA Datasheet (RF Micro Devices)

RF2145

2

Typical Applications

• 4.8V DCS1800/1900 Handsets

• 3V DECT Handsets and Base Stations

Product Description

TheRF2145isahighpower,highefficiencyamplifierIC.
The device is manufactured on an advanced Gallium Ars­enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the finalRF amplifier in
a 4-cell DCS1800 or DCS1900 handset. The device is
packaged in a 16-lead plastic package with wide ground
leads, and is self-contained with the exception of the out­put matching network and power s upply feed line. O nly a
single positive voltage is required to operate with full
power and efficiency, and on-board power control and
power-downfunctions are provided.

DCS1800/1900 POWER AMPLIFIER

• Commercial and Consumer Systems

• Portable Battery Powered Equipment

.392
.386

8°MAX

0°MIN

.158
.150

1

.244
.230

.069
.064

.009
.004

.050

.059
.054

.020
.014

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

PC

GND

GND

VCC1

RF IN

GND

GND

NC

ü

SiGe HBT

1

2

3

4

5

6

7

8

Si CMOS

16

NC

15

GND

14

GND

13

RF OUT

12

RF OUT

11

GND

10

GND

9

NC

Functional Block Diagram

.035

.010

.016

.008

Package Style: SOP-16 QBW1

Features

• Single 4.8V Power Supply

• +32dBm Output Power

• 28dB Small Signal Gain

• 55% Power Added Efficiency

• Power Control

• 1700MHz to 1900MHz Frequency Range

Ordering Information

RF2145 DCS1800/1900 Power Amplifier
RF2145 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev B5 010329

2-141

2

RF2145

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +7.5 V
Power Control Voltage (VPC) -0.5 to +3.0 V
DC Supply Current 675 mA

Input RF Power +12 dBm
Output Load VSWR 5:1
Ambient Operating Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Parameter

Overall

POWER AMPLIFIERS

Operating Frequency Range 1710 to 1785
Usable Frequency Range 1700 to 1990 MHz

Maximum Output Power +32 dBm 1/8 Duty cycle with 600µs pulse width
Total Efficiency 55 % At maximum output power
Input Power for Max Output +8 dBm
Input Intermodulation Distortion -57 dBc Input signal consists of F

Output Noise Power in Receive

Band

Isolation -25 dBm In “OFF” state, P
Second Harmonic -48 dBc

Third Harmonic <-60 dBc
Input Impedance 50 Ω
Input VSWR 3.8:1 Worst-case across the band. Using evalua-

Output Load VSWR 3:1 Spurious<-60dBc

Min. Typ. Max.

Specification

1850 to 1910

-48 dBc Input signal consists of F

-137 dBm/Hz Any gain setting

Unit Condition

T=25°C, VCC=4.8V, VPC=2.5V,
P

=+8dBm, Freq=1750MHz

IN

MHz

+8dBm, F
power at F
power level at 1805MHz relative to F
refers to the amount of TX band noise which

converts into the receive band.

+8dBm, F
power at F
power level at 1805MHz relative to F
refers to the amount of TX band noise which

converts into the receive band.

tion board; can be different with other layouts

=+8dBm

IN

1

1

at 1765MHz at -42 dBm. Output

2

is set to +32.5dBm. Specified

1

at 1765MHz at -32 dBm. Output

2

is set to +32.5dBm. Specified

1

Power Control

Power Control “ON” 2.5 3.0 V Threshold voltage
Power Control “OFF” 0.2 0.5 V Threshold voltage
Current into PC Input 15 mA In “ON” state

10 µA In “OFF” state
Power Control Range 45 dB
Turn On/Off TIme 100 ns

Power Supply

Power Supply Voltage 4.8 V Specifications

2.7 6.5 V Operating limits

Power Supply Current 550 mA DC Current at maximum output power

10 µAV

PC

=0.5V

at 1785MHz at

.This

1

at 1785MHz at

.This

1

2-142

Rev B5 010329

RF2145

Pin Function Description Interface Schematic

1PC

Power control pin. This also provides power down when VPCis less
than +0.5V. Full power is achieved at 2.5V, and >45dB of gain control is

obtainable over the full range. Approximately 15mA current is drawn
into this pin at full power.

PC

To RF
Stages

2GND

3GND
4VCC1

5RFIN
6GND

7GND
8NC

9NC
10 GND
11 GND
12 RF OUT

Ground connection. This pin should be connected to the ground plane
through a short path and may be combined with the ground plane from
Pins 3, 6, 7, 10, 11, 14, and 15. All four of these wide leads are tied
together internally to provide a low-inductance and low thermal resis­tance path to external ground. Ground vias should be placed as close
as possible to each ground lead.

Same as pin 2.
Power supply pin for the first stage. Also provides tuning for interstage

match.

RF input. This input is DC coupled, so an external blocking capacitor is
required if this pin is connected to a DC path.

Same as pin 2.
Same as pin 2.
No connection.
No connection.
Same as pin 2.
Same as pin 2.
RF output pin. Bias is also fed to the final stage through this wide lead.

External matching is most easily ach ieved with a series transmission
line and shunt capacitors, as shown in the application schematic.

VCC1

RF IN

From Bias
Stages

Seepin4schematic.

RF OUT

2

POWER AMPLIFIERS

13 RF OUT
14 GND
15 GND
16 NC

Rev B5 010329

Same as pin 12.
Same as pin 2.
Same as pin 2.
No connection.

From Bias
Stages

2-143

RF2145

Application Schematic

DCS 1800

2

470 pF

PC

470

Ω

33 pF

VCC2

POWER AMPLIFIERS

RF IN

33 pF

22 nH

33 pF

2.7 nH

3

Ω

2.0 pF

18

µ

strip

100 pF

270

Ω

Ω

1

2

3

4

5

6

7

8

16

15

14

3.3 pF

13

50Ωµstrip 50Ωµstrip

12

11

10

9

50Ωµstrip

3.0 pF

VCC

33 pF

33 pF

RF OUT

1.1 pF

Evaluation Board Schema t ic

(Download Bill of Materials from www.rfmd.com.)

C6

PC

VCC2

RF IN

J1

J1

C10

NC

P1-3

C2

1

33 pF

µ

F

C1

P1

1
2
3

1nF

GND
VCC

C13

33 pF

33 pF

L1

2.7 nH

R2

Ω

470

L2

22 nH

C8

NC

P2-3

R3

R1

270

18

Ω

P2

1
2
3

R4

3

Ω

GND
VCC2

Ω

100 pF

470 pF

C7

C5

2.0 pF

1

2

3

4

5

6

7

8

2145400-

16

15

14

C29

3.3 pF

13

12

11

10

9

C12

33 pF

C26

3.0 pF

10

C23

µ

F

C9

1.1 pF

C4

33 pF

C25
1nF

VCC

RF OUT

J2

2-144

Rev B5 010329

Evaluation Board Layout

2” x 2”

RF2145

2

POWER AMPLIFIERS

Rev B5 010329

2-145

2

RF2145

POWER AMPLIFIERS

2-146

Rev B5 010329