Datasheet RF2137, RF2137PCBA Datasheet (RF Micro Devices)

RF2137

2

Typical Applications

• 4.8V AMPS Cellular Handsets

• 4.8V CDMA/AMPS Handsets

• 4.8V JCDMA/TACS Handsets

Product Description

The RF2137 is a high power, high efficiency linear ampli­fier IC. The device is manufactured on a n advanced Gal­lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50Ω input and the output
can be easily matched to obtain optimum power, effi­ciency, and linearity characteristics at all recommended
supply voltages.

LINEAR POWER AMPLIFIER

• Driver Amplifier in Cellular Base Stations

• Portable Battery-Powered Equipment

-A-

0.05

±0.05

1.40

±0.10

1.70

±0.10

NOTES:

1. Shaded lead is pin 1.

2. Lead coplanarity - 0.10 with respect to datum "A".

Exposed

Heat Sink

±0.10

2.70

4.90

±0.10

8° MAX

0° MIN

3.90

±0.10

6.00

±0.20

Dimensions in mm.

0.60

±0.15

0.43

±0.05

1.27

0.22

±0.03

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

VCC

RF IN

GND

PC

ü

SiGe HBT

1

2

3

4

BIAS

PACKAGE BASE

GND

Si CMOS

8

RF OUT

7

RF OUT

6

RF OUT

5

RF OUT

Functional Block Diagram

Package Style: SOIC-8 Slug

Features

• Single 4.2V to 6.0V Supply

•Upto29dBmLinearOutputPower

• 27dB Gain With Analog Gain Control

• 45% Linear Efficiency

• On-board Power Down Mode

• 800MHz to 950MHz Operation

Ordering Information

RF2137 Linear Power Amplifier
RF2137 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev B2 010720

2-115

RF2137

2

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (No RF) -0.5 to +8.0 V
Supply Voltage (P
Power Control Voltage (VPC) -0.5to+6.0orV
DC Supply Current 800 mA

Input RF Power +12 dBm
Output Load VSWR 10:1
Ambient Operating Temperature -30 to +90 °C
Storage Temperature -40 to +150 °C

Parameter

POWER AMPLIFIERS

Overall

Usable Frequency Range 800 824 to 849 950 MHz
Linear Gain 25 27 29 dB
Total Linear Efficiency 40 45 %
Efficiency at Max Output 50 55 %
OFF Isolation 27 dB V

Second Harmonic -30 dBc Including Second Harmonic Trap
Maximum Linear Output Power 28.5 29 dB m IS-95A CDMA Modulation
Adjacent Channel Power @

885kHz offset

Adjacent Channel Power @

1.98MHz offset
Max CW Output Power 31.5 +32.0 dBm
Input VSWR <2:1
Output Load VSWR 10:1 No oscillations

<31dBm) -0.5 to +6.0 V

OUT

CC

Specification

Min. Typ. Max.

-46 -44 dBc Pout = 28 dBm

-58 -56 dBc Pout = 28 dBm

DC
DC

V

Refer to “Handling ofPSOP and P SSOP Products”
on page 16-15 for special handling information.

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Unit Condition

T=25 °C, VCC=5.0 V, VPC=3.6V,
Freq=824MHz to 849MHz

=0V,PIN=+6dBm

PC

ACPR can be improved by trading off effi­ciency.

Power Down

Turn On/Off Time 100 ns
Total Current 10 µA “OFF” State
V

“OFF” Voltage 0.2 0.5 V Threshold Voltage at Input

PC

“ON” Voltage 3.6 Vcc V Threshold Voltage at Input

V

PC

Power Supply

Power Supply Voltage 4.2 5.0 6.0 V Operating voltage
Idle Current 40 100 mA V

Current into VPC pin 15 20 mA

PC

=4.0V

2-116

Rev B2 010720

RF2137

Pin Function Description Interface Schematic

1VCC

2RFIN

3GND
4PC

Power supply for the driver stage, and interstage matching. Shunt
inductance is required on this pin, which can be achieved by an induc­tor to V

, with a decoupling capacitor on the VCCside. The value of

CC

the inductor is freque ncy dependent; 3.3nH is required for 830MHz,
and 1.2nH for 950MHz. Instead of an inductor, a high impedance
microstrip line can be used.

RF input. This is a 50Ω input, but the actual input impedance depends
on the interstage matching network connected to pin 1. An external DC
blocking capacitor is required if this port is connected to a DC path to
ground or a DC voltage.

Ground connection. Keep traces physically shor t and connect immedi­ately to the ground plane for best performance.

Power Control. When this pin is "low", all circuits are shut off. A "low" is
typically 0.5V or less at room temperature. During normal operation
this pin is the power cont rol. Control range varies from about 2V for
0dBmtoV

for +31dBm RF output power. The maximum power that

CC

can be achieved depends on the actual output matching. PC should
never exceed 6.0V or VCC, whichever is lowest.

See pin 1.

PC

RF IN

From Bias
Stages

VCC

To RF
Transistors

2

POWER AMPLIFIERS

5RFOUT

6RFOUT
7RFOUT
8RFOUT

Pkg

GND

Base

VCC

F

50Ωµstrip

C9

1nF

100 pF

100 pF

RF IN

J1

PC

3.3

C8

µ

RF Output and power supply for the output stage.The three output pi ns
are combined, and bi a s voltage for the final stage is provided through
these pins. The external path must be kept symmetric until combined to
ensure stability.An external matching networkis required to provide the
optimum load impedance; see the application schematics for details.

Same as pin 5. See pin 5.
Same as pin 5. See pin 5.
Same as pin 5. See pin 5.
Ground connection. The backside of the package should be connected

to the ground plane through a short path, i.e., vias unde r the device
may be required.

Evaluation Board Schemati c

(Download Bill of Materials from www.rfmd.com.)

C3

C5

R1

10 k

C7

1nF

L1

1.8 nH

Ω

2137400A

1

2

3

4

BIAS

PACKAGE BASE

L2

4.7 nH

8

7

6

5

C6

100 pF

L3

1.5 nH

C1

1.5 pF

100 pF

7.5 pF

C2

C4

P1-1

P1-3

From Bias
Stages

P1

1
2
3

50Ωµstrip

RF OUT

VCC
GND
PC

RF OUT

J2

Rev B2 010720

2-117

2

RF2137

Evaluation Board Layout

1.559" X 1.191"

POWER AMPLIFIERS

2-118

Rev B2 010720