The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50Ω input and the output
can be easily matched to obtain optimum power, efficiency, and linearity characteristics over varying supply
and control voltages.
LINEAR POWER AMPLIFIER
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
-A-
0.009
0.004
0.050
8° MAX
0° MIN
0.392
0.386
0.158
0.150
0.244
0.230
0.021
0.014
0.069
0.064
0.060
0.054
2
POWER AMPLIFIERS
Optimum Technology Matching® Applied
Si BJTGaAs MESFETGaAs HBT
Si Bi-CMOS
VCC
NC
RF IN
GND
GND
GND
GND
PC
ü
SiGe HBT
1
2
3
4
5
6
7
8
BIAS
Si CMOS
16
GND
15
RF OUT
14
RF OUT
13
GND
12
GND
11
RF OUT
10
RF OUT
9
GND
Functional Block Diagram
0.010
0.035
0.008
0.016
Package Style: Standard Batwing
Features
• Single 4.2V to 5.0V Supply
•Upto29dBmLinearOutputPower
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
Ordering Information
RF2132Linear Power Amplifier
RF2132 PCBAFully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B9 010417
2-109
Page 2
2
RF2132
Absolute Maximum Ratings
ParameterRatingUnit
Supply Voltage (No RF)-0.5 to +8.0V
Supply Voltage (P
Power Control Voltage (VPC)-0.5to+5.0orV
DC Supply Current800mA
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
POWER AMPLIFIERS
Overall
Usable Frequency Range800824 to 849950MHz
Linear Gain272931dB
Total Linear Efficiency4045%
Efficiency at Max Output5055%
OFF Isolation2327dBV
Second Harmonic-30dBcIncluding Second Harmonic Trap
Maximum Linear Output Power28.529IS-95A CDM A Modulation
Adjacent Channel Power Rejec-
tion @ 885 kHz
Adjacent Channel Power Rejec-
tion @ 1.98 MHz
Maximum CW Output Power31.532dBm
Operating Case Temperature-30110°CPout = 31 dBm, Efficiency = 55%
Ambient Operating Temperature-30100°C
Junction to Case Thermal Resis-
T=25 °C, VCC=4.8V, VPC=4.0V,
Freq=824MHz to 849MHz
=0V,PIN=+6dBm
PC
ACPR can be improved by trading off efficiency.
Power Down
Turn On/Off Time100ns
Total Current10µA“OFF” State
V
“OFF” Voltage0.20.5V
PC
V
“ON” Voltage3.64.0VccV
PC
Power Supply
Power Supply Voltage4.24.85.0VOperating voltage
Idle Current40100mAV
Current into VPC pin1520mA“ON” State
PC
=4.0V
2-110
Rev B9 010417
Page 3
RF2132
PinFunctionDescriptionInterface Schematic
1VCC1
2NC
3RFIN
4GND
5GND
6GND
7GND
8PC
Power supply for the driver stage, and interstage matching. Shunt
inductance is required on this pin, which can be achieved by an inductor to V
the inductor is frequency dependent; 3.3nH is required for 830MHz,
and 1.2nH for 950MHz. Instead of an inductor, a high impedance
microstrip line can be used.
Not Connected.
RF input. This is a 50Ω input, but the actual input impedance depends
on the interstage matching network connected to pin 1. An external DC
blocking capacitor is required if this port is connected to a DC path to
ground or a DC voltage.
Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance.
Same as pin 4.
Ground for stage 1. Keep traces physically short and con nect immedi-
ately to ground plane for best performance. This ground s hould be isolated from the batwing and other ground contacts. See evaluation
board layout.
Same as pin 6.
Power Control. When this pin is "low", all circuits are shut off. A "low" is
typically 0.5V or less at ro o m temperature. During normal operation
this pin is the power control. Control range varies from about 2V for
0dBmtoV
can be achieved depends on the actual output matching. PC should
never exceed 5.0V or VCC, whichever is the lowest.
, with a decoupling capacitor on the VCCside. The value of
CC
for +31dBm RF output power. The maximum power that
CC
See pin 1.
PC
RF IN
From Bias
Stages
VCC
To RF
Transistors
2
POWER AMPLIFIERS
9GND
10RF OUT
11RF OUT
12GND
13GND
14RF OUT
15RF OUT
16GND
Same as pin 4.
RF Output and power supply for the output stage. The four output pins
are combined, and bias voltage for the final stage is provided through
these pins. The external path must be kept symmetric until combined to
ensure stability.An external matching networkis required toprovide the
optimum load impedance; see the application schematics for details.
Same as pin 10.See pin 10.
Same as pin 4.
Same as pin 4.
Same as pin 10.See pin 10.
Same as pin 10.See pin 10.
Same as pin 4.
From Bias
Stages
RF OUT
Rev B9 010417
2-111
Page 4
2
RF2132
Vcc = 4.8 V
Vpc = 4.0 V
Application Schematic
V
CC
1nF
100 pF
1.8 nH
100 pF
1
2
16
6.8 nH
15
100 pF
RF IN
POWER AMPLIFIERS
18 k
Ω
V
PC
3
4
5
6
BIAS
7
8
14
3pF
13
12
11
3.3 nH
100 pF
RF OUT
10
12 pF
4.3 pF
9
1nF
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
P1-1
Interstage tuning (L1) for
centering output frequency
RF IN
33 pF
J1
Adds bias to the first
amplifier stage for
improved linearity
P1-3
3.3
C8
C12
Power supply filtering/bypassing for V
C1
100 nFC211
L1
1.8 nH
C6
100 pF
R1
Ω
18 k
C13
µ
F
1nF
C14
100 pF
1
2
3
4
5
6
7
8
BIAS
C3
µ
F
µ
F
1
16
15
14
13
12
11
10
9
cc
C10
12 pF
C4
1nF
C5
100 pF
L2
6.8 nH
C7
3pF
Vcc = 4.8 V
Vpc = 4.0 V
P1
1
P1-1
2
P1-3
3
Bias inductor for the
amplifier output stage
Harmonic trap: C7series resonates with
internal bondwires of pins 14 and 15 at
to effectively short out 2nd harmonic
2f
0
for optimum gain and efficiency
L3
3.3 nH
C11
4.3 pF
C9
RF OUT
100 pF
J2
Matching network for
optimum load impedance
VCC
GND
PC
2-112
Power supply filtering/bypassing for V
PC
Rev B9 010417
Page 5
Evaluation Board Layout
2” x 2”
RF2132
2
POWER AMPLIFIERS
Rev B9 010417
2-113
Page 6
RF2132
RF2132 Evaluation Board
Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95ACD MA
2
90
80
ACPR1.98 MHz
350
300
70
ACPR885 kHz
250
60
POWER AMPLIFIERS
50
40
Current
30
ACPR (-dBc), Efficiency (%)
200
150
100
Current (mA)
20
Total Efficiency
50
10
0
0
28262422201816141210
Pout(dBm)
2-114
Rev B9 010417
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