Datasheet RF2132, RF2132PCBA Datasheet (RF Micro Devices)

Page 1
RF2132
2
Typical Applications
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
Product Description
The RF2132 is a high power, high efficiency linear ampli­fier IC. The device is manufactured on an advanced Gal­lium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS handheld digi­tal cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50input and the output can be easily matched to obtain optimum power, effi­ciency, and linearity characteristics over varying supply and control voltages.
LINEAR POWER AMPLIFIER
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
-A-
0.009
0.004
0.050
8° MAX
0° MIN
0.392
0.386
0.158
0.150
0.244
0.230
0.021
0.014
0.069
0.064
0.060
0.054
2
POWER AMPLIFIERS
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS
VCC
NC
RF IN
GND
GND
GND
GND
PC
ü
SiGe HBT
1
2
3
4
5
6
7
8
BIAS
Si CMOS
16
GND
15
RF OUT
14
RF OUT
13
GND
12
GND
11
RF OUT
10
RF OUT
9
GND
0.010
0.035
0.008
0.016
Package Style: Standard Batwing
Features
• Single 4.2V to 5.0V Supply
•Upto29dBmLinearOutputPower
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
Ordering Information
RF2132 Linear Power Amplifier RF2132 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B9 010417
2-109
Page 2
2
RF2132
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (No RF) -0.5 to +8.0 V Supply Voltage (P Power Control Voltage (VPC) -0.5to+5.0orV DC Supply Current 800 mA
Input RF Power +12 dBm Output Load VSWR 10:1 Storage Temperature -40 to +150 °C Junction Temperature 200 °C
<32dBm) -0.5 to +5.0 V
OUT
CC
DC DC
V
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice.RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
POWER AMPLIFIERS
Overall
Usable Frequency Range 800 824 to 849 950 MHz Linear Gain 27 29 31 dB Total Linear Efficiency 40 45 % Efficiency at Max Output 50 55 % OFF Isolation 23 27 dB V
Second Harmonic -30 dBc Including Second Harmonic Trap Maximum Linear Output Power 28.5 29 IS-95A CDM A Modulation Adjacent Channel Power Rejec-
tion @ 885 kHz
Adjacent Channel Power Rejec-
tion @ 1.98 MHz Maximum CW Output Power 31.5 32 dBm Operating Case Temperature -30 110 °C Pout = 31 dBm, Efficiency = 55% Ambient Operating Temperature -30 100 °C Junction to Case Thermal Resis-
tance Input VSWR <2:1 Output Load VSWR 10:1 No oscillations
Specification
Min. Typ. Max.
-46 -44 dBc Pout = 28 dBm
-58 -56 dBc Pout = 28 dBm
85 °C/W
Unit Condition
T=25 °C, VCC=4.8V, VPC=4.0V, Freq=824MHz to 849MHz
=0V,PIN=+6dBm
PC
ACPR can be improved by trading off effi­ciency.
Power Down
Turn On/Off Time 100 ns Total Current 10 µA “OFF” State V
“OFF” Voltage 0.2 0.5 V
PC
V
“ON” Voltage 3.6 4.0 Vcc V
PC
Power Supply
Power Supply Voltage 4.2 4.8 5.0 V Operating voltage Idle Current 40 100 mA V
Current into VPC pin 15 20 mA “ON” State
PC
=4.0V
2-110
Rev B9 010417
Page 3
RF2132
Pin Function Description Interface Schematic
1VCC1
2NC 3RFIN
4GND 5GND
6GND
7GND 8PC
Power supply for the driver stage, and interstage matching. Shunt inductance is required on this pin, which can be achieved by an induc­tor to V
the inductor is frequency dependent; 3.3nH is required for 830MHz, and 1.2nH for 950MHz. Instead of an inductor, a high impedance microstrip line can be used.
Not Connected. RF input. This is a 50input, but the actual input impedance depends
on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage.
Ground connection. Keep traces physically short and connect immedi­ately to the ground plane for best performance.
Same as pin 4. Ground for stage 1. Keep traces physically short and con nect immedi-
ately to ground plane for best performance. This ground s hould be iso­lated from the batwing and other ground contacts. See evaluation board layout.
Same as pin 6. Power Control. When this pin is "low", all circuits are shut off. A "low" is
typically 0.5V or less at ro o m temperature. During normal operation this pin is the power control. Control range varies from about 2V for 0dBmtoV
can be achieved depends on the actual output matching. PC should never exceed 5.0V or VCC, whichever is the lowest.
, with a decoupling capacitor on the VCCside. The value of
CC
for +31dBm RF output power. The maximum power that
CC
See pin 1.
PC
RF IN
From Bias Stages
VCC
To RF Transistors
2
POWER AMPLIFIERS
9GND
10 RF OUT
11 RF OUT 12 GND 13 GND 14 RF OUT 15 RF OUT 16 GND
Same as pin 4. RF Output and power supply for the output stage. The four output pins
are combined, and bias voltage for the final stage is provided through these pins. The external path must be kept symmetric until combined to ensure stability.An external matching networkis required toprovide the optimum load impedance; see the application schematics for details.
Same as pin 10. See pin 10. Same as pin 4. Same as pin 4. Same as pin 10. See pin 10. Same as pin 10. See pin 10. Same as pin 4.
From Bias Stages
RF OUT
Rev B9 010417
2-111
Page 4
2
RF2132
Vcc = 4.8 V Vpc = 4.0 V
Application Schematic
V
CC
1nF
100 pF
1.8 nH
100 pF
1
2
16
6.8 nH
15
100 pF
RF IN
POWER AMPLIFIERS
18 k
V
PC
3
4
5
6
BIAS
7
8
14
3pF
13
12
11
3.3 nH
100 pF
RF OUT
10
12 pF
4.3 pF
9
1nF
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
P1-1
Interstage tuning (L1) for centering output frequency
RF IN
33 pF
J1
Adds bias to the first amplifier stage for improved linearity
P1-3
3.3
C8
C12
Power supply filtering/bypassing for V
C1
100 nFC211
L1
1.8 nH
C6
100 pF
R1
18 k
C13
µ
F
1nF
C14
100 pF
1
2
3
4
5
6
7
8
BIAS
C3
µ
F
µ
F
1
16
15
14
13
12
11
10
9
cc
C10
12 pF
C4
1nF
C5
100 pF
L2
6.8 nH
C7
3pF
Vcc = 4.8 V Vpc = 4.0 V
P1
1
P1-1
2
P1-3
3
Bias inductor for the amplifier output stage
Harmonic trap: C7series resonates with internal bondwires of pins 14 and 15 at
to effectively short out 2nd harmonic
2f
0
for optimum gain and efficiency
L3
3.3 nH
C11
4.3 pF
C9
RF OUT
100 pF
J2
Matching network for optimum load impedance
VCC
GND
PC
2-112
Power supply filtering/bypassing for V
PC
Rev B9 010417
Page 5
Evaluation Board Layout
2” x 2”
RF2132
2
POWER AMPLIFIERS
Rev B9 010417
2-113
Page 6
RF2132
RF2132 Evaluation Board
Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95ACD MA
2
90
80
ACPR1.98 MHz
350
300
70
ACPR885 kHz
250
60
POWER AMPLIFIERS
50
40
Current
30
ACPR (-dBc), Efficiency (%)
200
150
100
Current (mA)
20
Total Efficiency
50
10
0
0
28 26 24 22 20 18 16 14 12 10
Pout(dBm)
2-114
Rev B9 010417
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