Page 1
RF2129
2
Typical Applications
• 2.5GHz ISM Band Applications
• PCS Communication Systems
• Wireless LAN Systems
Product Description
The RF2129 is a linear, medium power, high efficiency
amplifier IC designed specifically for low voltage operation. The device is manufactured on an advancedGallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF
amplifier in 2.5GHz spread spectrum transmitters. The
device is packaged in an 8-lead plastic package with a
backside ground and is self-contained with the exception
of the output matching network and power supply feed
line.
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
ü
SiGe HBT
Si CMOS
od
r
P
ed
3V, 2.5GHZ LINEAR POWER AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
• Broadband Spread Spectrum Systems
9
.010
.004
.061
.055
.087
.071
.196
.189
8°MAX
0°MIN
.157
.150
1
.244
.230
.035
.016
.010
.007
.019
.014
.050
18
RF2
Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for special handling information.
ct
u
Features
• Single 3.3V Power Supply
• +26dBm Saturated Output Power
• 27dB Small Signal Gain
Package St yle: PSOP-8
EXPOSED
HEATSINK
.123
.107
2
POWER AMPLIFIERS
1
VCC2
2
VCC2
3
NC
4
RF IN
S
Functional Block Diagram
Rev B4 000323
ee
PACKAGE BASE
rad
BIAS
CIRCUITS
Upg
GND
8
7
6
5
VCC1
RF OUT
RF OUT
PC
• High Power Added Efficiency
• Power Down Mode
• 1800MHz to 2500MHz Frequency Range
Ordering Information
RF2129 3V, 2.5GHz Linear Power Amplifier
RF2129 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-93
Page 2
RF2129
2
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +6.0 V
Power Control Voltage (VPC)-0.5to3.3V
DC Supply Current 350 mA
Input RF Power +12 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Moisture sensitivity JEDEC Level 3
Parameter
Overall
POWER AMPLIFIERS
Frequency Range 1800 to 2500 MHz
Maximum Sa turated Output
Power
Efficiency at max output power 42 %
Small Signal Gain 24.5 26.5 dB
Reverse Isolation 30 dB In “ON” state
Second Harmonic -50 dBc Including second harmonic trap, see applicaIM
3
IM
5
IM
7
Isolation -20 -30 dBm In “OFF” state, P
Input Impedance 50 Ω
Input VSWR 2:1
Noise Figure 7 dB
Power Down
Power Control “ON” 2.7 3.0 V Voltage supplied to control input; device is
Power Control “OFF” 0 0.5 V Voltage supplied to control input; device is
PC Input Impedance 5
Power Supply
Operating Voltage 3.0 to 5.0 V
Current Consumption 180 260 320 mA Power Down “ON”, at max output power
Current Consumption <1 10 µA Power Down “OFF”
Min. Typ. Max.
+24.5 +26 +27 dBm P
Specification
30 dB In “OFF” state
-30 -23 P
-35 -30 P
-48 -35 P
P
ed
95 150 175 mA Power Down “ON”, two-tone test +20dBm
rad
50 100 150 mA Idle current
DC
u
od
r
Refer to “Handling ofPSOP and P SSOP Products”
on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit Condition
T=25°C,VCC=3.3V, VPC=3.0V, PIN=0dBm,
Freq=2450MHz
=+6dBm
IN
9
18
tion circuit
=+17dBm in each tone
OUT
=+17dBm in each tone
OUT
RF2
=+17dBm in each tone
OUT
IN
=0dBm
ct
“ON”
“OFF”
kΩ
average output power
2-94
ee
S
Upg
Rev B4 000323
Page 3
RF2129
Pin Function Description Interface Schematic
1VCC2
Bias supply pin for the first stage. A small tuning capacitoris requiredto
set the desired frequency response. External low frequency bypass
capacitors should be connected as shown in the application schematic
if no other low frequency decoupling is nearby.
VCC2
RF IN
2VCC2
3NC
4RFIN
5PC
6RFOUT
7RFOUT
8VCC1
Pkg
Base
GND
Connected internally to pin 1. See pin 1.
Not internally connected.
RF input. This input is DC coupled, so an external blocking capacitor is
required if this pin is connected to a DC path.
Power control pin. For maximum power this pin should be 3.3V. A
higher voltage is not recommended. For less output power and reduced
idle current this voltage may be reduced.
RF output and bias for the output stage. The power su pply for the output transistor needs to be supplied to this pin. This can be done
through a quarter-wave length microstrip line thatis RF grounde d at the
other end, or through an RF inductor that supports the requi red DC currents.
Same as pin 6. See pin 6.
Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device
may be required.
RF2
18
See pin 1.
PC
9
See pin 5.
Seepin1and6.
ct
u
od
r
P
500
BIAS
VCC1
Ω
To RF
Stages
RF OUT
2
POWER AMPLIFIERS
S
Rev B4 000323
ee
ed
rad
Upg
2-95
Page 4
RF2129
Application Schematic
2.45GHz Operation
V
CC
1nF
2
100 pF
22 pF
8.2 nH
33 pF
RF OUT
9
33 pF
1nF
36 pF
3.3 pF
5
Ω
1
2
3
4
PACKAGE BASE
BIAS
CIRCUITS
8
7
6
5
10 pF
1.1 pF
Power
Control
3.3µF
POWER AMPLIFIERS
RF IN
18
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
RF2
3.3
C12
1nF
C6
µ
F
3.3
C11
V
CC
C10
1nF
µ
F
C9
36 pF
ct
u
od
50
Ω
L=0.250"
C1
3.3 pF
rad
ed
R1
Ω
5
1
2
P
r
BIAS
CIRCUITS
C8
10 pF
8
7
C7
3.3
C13
22 pF
8.2 nH
µ
L12
F
2-96
RF IN
ee
S
C2
33 pF
Upg
3
50
Ω
4
PACKAGE BASE
6
5
Power
Control
C4
1.1 pF
C3
33 pF
RF OUT
Rev B4 000323
Page 5
Evaluation Board Layout
2” x 2”
RF2129
2
POWER AMPLIFIERS
9
ee
S
Upg
rad
ed
18
RF2
ct
u
od
r
P
Rev B4 000323
2-97
Page 6
2
RF2129
POWER AMPLIFIERS
9
ee
S
Upg
rad
ed
18
RF2
ct
u
od
r
P
2-98
Rev B4 000323
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