Datasheet RF2128, RF2128PCBA Datasheet (RF Micro Devices)

RF2128

2

Typical Applications

• PCS Communication Systems

• 2.5GHz ISM Band Applications

•WirelessLANs

Product Description

The RF2128 is a medium-power, high-efficiency, linear
amplifierIC.Thedeviceismanufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 2.45GHz ISM applications such as WLAN
and POS terminals. The part also will function as the final
stage in digital PCS phone transmitters requiring linear
amplification operating between 1900MHz and
2200 MHz, with over 100mW transmitted power, or as the
driver stage for the RF2125 high power amplifier. A s im­ple power down function is included for TDD operation.

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

Si CMOS

od

r

P

ed

MEDIUM POWER LINEAR AMPLIFIER

• Commercial and Consumer Systems

• Portable Battery Powered Equipment

.050

4°MAX

0°MIN

.315
.305

.166

SQ

1

.017
.013

8P

12

.180 SQ MAX

Metal lid and base, gold plated

.057 MAX

.004
.000

RF2

.017

ct

u

.013

Package Style: SOP-8-C

Features

• Single 3.0V to 6.5V Supply

• 100m W Linear Output Power

• 25dB Small Signal G ain

.006
.004

2

POWER AMPLIFIERS

1

VCC2

2

GND1

3

PD

4

RF IN

S

Functional Block Diagram

Rev A3 010112

ee

PACKAGE BASE

rad

BIAS

CIRCUITS

Upg

GND

8

7

6

5

VCC1

RF OUT

RF OUT

GND 2

• 30% Efficiency

• Digitally Controlled Power Down Mode

• 1900MHz to 2500MHz Operation

Ordering Information

RF2128 Medium Power Linear Amplifier
RF2128 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

2-85

2

RF2128

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (VCC)+7.5V
Power Down Voltage (VPD)+5.5V
DC Supply Current 125 mA

Input RF Power +12 dBm
Output Load VSWR 20:1
Operating Case Temperature -40 to +100 °C
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C

DC

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Caution! ESD sensitive device.

Parameter

POWER AMPLIFIERS

Overall

Frequency Range 1900 to 2500 MHz
Maximum Output Power >+20 dBm V

Maximum Output Power >+23 dBm V
Total CW Efficiency 30 % Maximum output

Small-signal Gain 25 dB
Second Harmonic -25 dBc
Third Harmonic -22 dBc
Isolation 15 dB V

Input VSWR 2:1
Input Impedance 50 Ω
Noise Figure 7 dB

Two-tone Specification

Average Two-Tone Power +17 dBm PEP-3dB
IM

3

IM

5

IM7 -44 dBc P
Two-Tone Power-Added

Efficiency

Power Down Control

Power Down “ON”
PowerD own “OFF”

Power Supply

Voltage 5 V Specifications

Current 50 65 mA Operating Idle

Current 10 µA Power Down

Upg

Min. Typ. Max.

Specification

Unit Condition

RF2

ct

-24 dBc P

-36 dBc P

36 %

V

CC

01.2V

rad

ed

3.0 to 6.5 V Operating

85 mA At maximum output power

r

P

u

od

V

T=25°C, VCC=5V, VPD=5.0V,
Freq=2400MHz

=5.0V, VPD=5.0V, PIN=-3.0dBm

CC

=6.0V, VPD=5.5V, PIN=0dBm

CC

8P

12

=0.2V

PD

=+14dBm for each tone

OUT

=+14dBm for each tone

OUT

=+14dBm for each tone

OUT

Voltage supplied to the input; device is “on”
Voltage supplied to the input; device is “off”

2-86

ee

S

Rev A3 010112

RF2128

Pin Function Description Interface Schematic

1VCC2

2GND1
3PD

4RFIN

5GND2
6RFOUT

7RFOUT
8VCC1

Pkg

Base

GND

Power supply for the driver stage and interstage matching. External
matching on this pin is required to optimize the gain. The matching on
this port also greatly affects the input impedance. A decoupling capaci­tor of 330pF is required, together with a series RC for tuning for maxi­mum gain at the desired frequency. See the application information for
details.

Ground connection for the driver stage. Keep traces physically short
and connect immediately to the ground plane for best performance.

Power Down control. When this pin is "low", all circuits are shut off. A
"low" is typical 1.2V or less at room temperature. When this pin is
"high", all circuits areopera ting normally. A "high"is V

V

, output power and performance will be degraded. This could be

CC

used to obtain some gain control, but results are not guaranteed.
RF Input. This is a 50Ω input, but the actual impedance depends on the

matching provided on pin 1. An external DC blocking capacitor is
required if this port is connected to a DC path to ground.

Ground connection for the output stage. Keep traces physically short
and connect immediately to the ground plane for best performance.

RF Output and power supply for the output stage.B ias for the output
stage needs to be provided on this pin. This can be done through a
quarter-wave microstrip that is RF grounded on the other end. For
matching to 50Ω, an external series microstrip line is required.

Same as pin 6.
Power supply for the bias circuits. An external RF bypass capacitor of

22pF is required. Keep the traces to the capacitor as short as possible,
and connect the capacitor immediately to the ground plane.

Ground connection. Thebackside of the package should beconnected
to the ground plane through a short path, i.e., vias under the device
may be required.

.IfPDisbelow

CC

12

RF2

8P

2

POWER AMPLIFIERS

ee

S

V

CC

Upg

VPD

POWER

DOWN

RF IN

1.5

6.2 pF

1nF

rad

2.4 pF

Ω

L= 175 mil,
W= 10mil

Application Schemati c

2450MHz

ct

u

od

r

P

330 pF

ed

L= 250 mil,
W= 20 mil

1

2

33 pF

3

4

PACKAGE BASE

BIAS

CIRCUITS

8

7

6

5

22 pF

L = 220 mil,
W=25mil

PCB materials: FR-4
Thickness: 0.031"

22 pF

L = quarter wave,
W= 10mil

15 pF

RF OUT

Rev A3 010112

2-87

2

RF2128

Evaluation Board Schema t ic

2450MHz Operat ion

(Download Bill of Materials from www.rfmd.com.)

2128400 Rev -

P1

P1-1

POWER AMPLIFIERS

P1-3

C7
1

µ

C3

F

1nF

C9
1nF

C4
330 pF

C2

2.4 pF

C8
330 pF

L=250 mil,

W=20 mil

1

2

3

4

BIAS

CIRCUITS

8

7

6

L=217 mil, W=26 mil

5

C5
22 pF

C6
16 pF

P1-1

P1-3

1

VCC

2

GND
VPD

3

RF OUT

50

Ω µ

strip

J2

RF IN

J1

PACKAGE BASE

GND

50

Ω µ

strip

C1

6.2 pF

100Ω, L=174 mil,

W=10 mil

(PCB mat'l: FR-4,

Thickness: 0.031")

8P

12

Evaluation Board Layout

1.547" x 1.068"

RF2

ct

u

od

r

P

ed

rad

2-88

ee

S

Upg

Rev A3 010112