Page 1
RF2127
2
Typical Applications
• DECT Cordless Applications
• PCS Communication Systems
Product Description
The RF2127 is a medium-power, high-efficiency, linear
amplifierIC.Thedeviceismanufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 1800MHz digital PCS phone transmitters
requiring linear amplification operating between
1800 MHz and 1900MHz, with over 100mW transmitted
power. It will also function as the driver stage for the
RF2125 high power amplifier. A simple power down function is included for TDD operation.
MEDIUM POWER LINEAR AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
-A-
0.160
0.152
0.200
0.192
0.248
0.232
8° MAX
0° MIN
0.0500
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Packagesurface finish: Matte (Charmilles #24~27).
0.0164
0.018
0.014
0.050
0.0100
0.0076
0.059
0.057
0.010
0.004
2
POWER AMPLIFIERS
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
VCC2
GND1
PD
RF IN
ü
SiGe HBT
1
2
3
4
BIAS
CIRCUITS
Si CMOS
8
VCC1
7
RF OUT
6
RF OUT
5
GND2
Functional Block Diagram
Package Style: SOIC-8
Features
• Single 3.0V to 6.5V Supply
• 100mW Linear Output Power
• 25dB Small Signal Gain
• 30% Efficiency
• Digitally Controlled Power Down Mode
• 1500MHz to 1900MHz Operation
Ordering Information
RF2127 Medium Power Linear Amplifier
RF2127 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A3 010720
2-79
Page 2
2
RF2127
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (VCC) -0.5 to +7.5 V
Power Down Voltage (VPD) -0.5 to +5.5 V
DC Supply Current 125 mA
Input RF Power +12 dBm
Output Load VSWR 20:1
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to + 150 °C
DC
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
POWER AMPLIFIERS
Frequency Range 1500 to 1900 MHz
Maximum Output Power +20 dBm V
Maximum Output Power +23 dBm V
Total CW Efficiency 30 % Maximum output, V
Small-signal Gain 23 25 dB
Second Harmonic -25 dBc P
Third Harmonic -22 dBc P
Input VSWR 2:1
Input Impedance 50 Ω
Noise Figure 7 dB
Min. Typ. Max.
Specification
Unit Condition
T=25°C, VCC=5V,VPD=5V,Z
P
=-3dBm,Freq=1800MHz
IN
=5V,Pin=-3dBm
CC
=6V,Pin=0dBm
CC
CC=VPD
=20dBm
OUT
=20dBm
OUT
Two-Tone Specification
Average Two-Tone Power +17 dBm PEP-3dB
IM
3
IM
5
IM
7
Two-Tone Power-Added
Efficiency
-40 dBc P
-45 dBc P
-44 dBc P
36 %
=+14dBM for each tone
OUT
=+14dBM for each tone
OUT
=+14dBM for each tone
OUT
Power Control
Power Down “ON” V
Power Down “OFF” 0 1.2 V Voltage supplied to the input; Part is “OFF”
CC
V Voltagesupplied to the input; Part is “ON”
Power Supply
Voltage 5 V Specifications
3.0 to 6.5 V Operating Limits
Current 50 65 mA Operating Idle
80 mA Maximum output
10 µA Power Down
LOAD
=5V
=106Ω,
2-80
Rev A3 010720
Page 3
RF2127
Pin Function Description Interface Schematic
1VCC2
2GND1
3PD
4RFIN
5GND2
6RFOUT
7RFOUT
8VCC1
Power supply for the driver stage and interstage matching. Matching is
typicallydonebyamicrostriplinetoV
V
side. See the application information for details.
CC
Ground connection for the driver stage. Keep traces physically short
and connect immediately to the ground plane for best performance.
This connection should be separated from the ground connection for
the output stage, i.e., using separate traces and vias.
Power Down control. When this pin is "low", all circuits are shut off. A
"low" is typically 1.2V or less at room temperature. When this pin is
"high", all circuits are ope rating normally. A "high" is V
below V
be used to obtain some gain control, but results are not guaranteed.
RF Input. This is a 50Ω input, but the actual impedance depends on
the matching provided on pin 1. An external DC blocking capacitor is
required if this port is connected to a DC path to ground.
Ground connection for the output stage. Keep traces physically short
and connect immediately to the ground plane for best performance.
This connection should be separated from the ground connection for
the driver stage, i.e., using separate traces and vias.
RF Output and power supply for the output stage. Bias for the output
stage needs to be provided on this pin. This can be done through a
quarter-wave microstrip that is RF grounded on the other end. For
matching to 50Ω, an external series microstrip line is required.
Same as pin 6.
Power supply for the bias circuits. An external RF bypass capacitor of
22 pF is required. Keep the traces tothe capacitoras short as possible,
and connect the capacitor immediately to the ground plane.
, output power and performance willbe de graded. This could
CC
that is RF grounded at the
CC
.IfVPDis
CC
2
POWER AMPLIFIERS
Rev A3 010720
2-81
Page 4
RF2127
V
CC
Application Schematic
1850MHz
2
1nF
POWER AMPLIFIERS
VPD
POWER
DOWN
RF IN
6.2 pF
330 pF
0.010" x 0.170"
0.010" x 0.170"
1
2
3
4
BIAS
CIRCUITS
PACKAGE BASE
22 pF
W=0.010"
L=Quarter wave length
22 pF
8
16 pF
7
6
5
50
Ω µ
strip
PCB material: FR-4
Thickness: 0.031"
RF OUT
Evaluation Board Schema t ic
(Download Bill of Materia ls from www.rfmd.com.)
P1-1
P1-3
J1
2-82
RF IN
C1
1
C6
6.2 pF
µ
F
C2
1nF
C3
1nF
0.010" x 0.170"
C4
330 pF
C5
330 pF
W=0.010"
L=0.170"
1
2
3
4
BIAS
CIRCUITS
8
C7
22 pF
7
6
0.025" x 0.060" 0.025" x 0.165"
5
(PCB mat'l: FR-4,
Thickness: 0.031")
L=0.320"
W=0.010"
C8
16 pF
RF OUT
P1-1
P1-3
J2
2127400 Rev A
P1
1
VCC
GND
2
VPD
3
Rev A3 010720
Page 5
Evaluation Board Layout
Board Size 1.55” x 1.07”
RF2127
2
POWER AMPLIFIERS
Rev A3 010720
2-83
Page 6
2
RF2127
POWER AMPLIFIERS
2-84
Rev A3 010720
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