Datasheet RF2126, RF2126PCBA Datasheet (RF Micro Devices)

RF2126

2

Typical Applications

• 2.5GHz ISM Band Applications

• Digital Communication Systems

• PCS Communication Systems

Product Description

The RF2126 is a high-power,high-efficiency, linear ampli­fier IC. The device is manufactured on an advanced Gal­lium Arsenide Heterojunction Bipolar Transistor (HBT)
process and has been designed for use as the final RF
amplifier in 2.45 GHz ISM applications such as WLAN
and POS terminals. The part will alsofunction as the final
stage in digital PCS phone transmitters requiring linear
amplification operating between 1800MHz and
2500 MHz. The device is packaged in an 8-lead plastic
package with a backside ground. The device is self-con­tained with the exception of the output matching network
and power supply feed line. It produces a typical output
power level of 1W.

HIGH POWER LINEAR AMPLIFIER

• Commercial and Consumer Systems

• Portable Battery-Powered Equipment

-A-

0.05

±0.05

1.40

±0.10

1.70

±0.10

NOTES:

1. Shaded lead is pin 1.

2. Lead coplanarity - 0.10 with respect to datum "A".

Heat Sink

4.90

±0.10

8° MAX

0° MIN

3.90

±0.10

6.00

±0.20

Dimensions in mm.

0.60

±0.15

0.43

±0.05

1.27

0.22

±0.03

Exposed

±0.10

2

POWER AMPLIFIERS

2.70

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

RF IN

RF IN

PC

VCC

ü

SiGe HBT

1

2

3

4

BIAS

CIRCUIT

PACKAGE BASE

GND

Si CMOS

8

RF OUT

7

RF OUT

6

RF OUT

5

RF OUT

Functional Block Diagram

Package Style: SOIC-8 Slug

Features

• Single 3V to 6.5V Supply

• 1.3W Output Power

•12dBGain

• 45% Efficiency

• Power Down Mode

• 1800MHz to 2500MHz Operation

Ordering Information

RF2126 High PowerLinear Amplifier
RF2126 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A5 010207

2-73

RF2126

2

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (VCC) -0.5 to +7.5 V
Power Control Voltage (VPC) -0.5to+5V V
DC Supply Current 450 mA

Input RF Power +20 dBm
Output Load VSWR 20:1

Operating Ambient Te mperature -40 to +85 °C
Storage Temperature -40 to + 100 °C

Parameter

POWER AMPLIFIERS

Overall

Frequency Range 1800 2500 MHz
Maximum Output Power +27.0 dBm V

Maximum Output Power +29 dBm VCC=4.8V, PIN=+19dBm
Maximum Output Power +30.0 +31.0 dBm V
Total Power Added Eff iciency 45 % Maximum output, V
Total Power Added Eff iciency 45 % Maximum output, V
Total Power Added Eff iciency 45 % Maximum output, V
Small-signal Gain 12 dB

Second Harmonic -55 dBc See Application Schematic, P
Third Harmonic -60 dBc

Min. Typ. Max.

Specification

DC

Refer to “Handling ofPSOP and P SSOP Products”
on page 16-15 for special handling information.

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Unit Condition

T=25°C, VCC=6.0 V, VPC=3.0V,
Z

=12Ω,Pin= 0dBm, Freq=2450MH z,

LOAD

Idle current=180mA

=3.6V, PIN=+19dBm

CC

=6.0V, PIN=+19dBm

CC

CC
CC
CC

=3.6V
=4.8V
=6.0V

=+17dBm

IN

Input VSWR 1.5:1 With external matching network; see appli-

cation schematic

Two-tone Specification

Average Two-Tone Power +27 dBm PEP-3dB
IM

IM
IM

3
5
7

-24 -25 dBc P

-35 dBc P

-55 dBc P

=+24dBm for each tone

OUT

=+24dBm for each tone

OUT

=+24dBm for each tone

OUT

Power Control

V

PC

Power Control “OFF” 0.2 0.5 V Threshold voltage at device input

1.5 3.0 3.5 V To obtain 1 8 0mA idle current

Power Supply

Power Supply Voltage 3.0 6.5 V
Supply Current 270 350 410 mA P

Power Down Current 0.5 10 µAVPC=0.2V

=+30dBm, VCC=6.0V

OUT

2-74

Rev A5 010207

RF2126

Pin Function Description Interface Schematic

1RFIN

2RFIN
3PC

4VCC

5RFOUT

6RFOUT
7RFOUT
8RFOUT

Pkg

GND

Base

RF input. This input is DC coupled, so an external blocking capacitor is
required if this pin is connected to a DC path. An optimum match to
50Ω is obtained bypr oviding an external series capacitor of 1.6pF and
then a shunt capacitor of 2.0pF; see the Application Schematic. Those
values are typical for 2450MHz; other values may be required for other
frequencies.

Same as pin 1.
Power control pin. For obtaining maximum performance the voltage on

this pin can be usedto setcorrect bias level. In a typical application this
is implemented bya feedback loop. The feedback can be based on the
actual supply current of the device, i.e. maintaining a fixed current level,
or it can be based on the RF output power level to maintain a fixed RF
power level (Automatic Level Control loop). A voltage of 0.5V or lower
brings the part into power downstate.

Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.

RF output and bias for the output stage. The power su pply for the out­put transistor needs to be supplied to this pin. This can be done
through a quarter-wavelengthmicrostrip line that is RF grounded at the
other end, or through an RF inductor that supports the requi red DC cur­rents. Optimum load impedance is achieved by providing a shunt
capacitor of 1.8pF and a series capacitor of 3.3pF; see the Application
Schematic. Those values are typical for 2450MHz; other values maybe
required for other frequencies. Since there are several outp ut pins
available, which are internally connected, one pin can be used for con­necting the bias, another for connecting a (third) harmonic trap filter,
and the other pins for the RF output.

Same as pin 5.
Same as pin 5.
Same as pin 5.
Ground connection. The backside of the package should be connected

to the ground plane through a short path, i.e., vias under the device
may be required.

2

POWER AMPLIFIERS

Rev A5 010207

2-75

RF2126

Application Schematic

2450MHz Operat ion

2

1000 pF

1.6 pF
1

2

3

4

BIAS

CIRCUIT

PACKAGE BASE

8

3.3 pF

7

1.8 pF

6

5

4.7 nH

RF OUT

RF IN

2.0 pF

V

PD

V

CC

POWER AMPLIFIERS

33 pF1000 pF

Evaluation Board Schema t ic

2450 MHz Operation

(Download Bill of Materials from www.rfmd.com.)

P1

1

VCC

2

GND
VPC

3

8

7

6

5

3.3 pF
C4

1.8 pF
C3

50Ωµstrip

RF OUT

J2

RF IN

J1

50Ωµstrip

2.0 pF

V

PC

C1

1000 pF

C6

1.6 pF
C2

P1-1

P1-3

1

2

3

4

BIAS

CIRCUIT

2-76

V

CC

1000 pF

1uF

C8

C7

PACKAGE BASE

4.7 nH
L1

33 pF

C5

Rev A5 010207

Evaluation Board Layout

1.5” x 1.0”

Board Thickness 0.031”, Board Material FR-4

RF2126

2

POWER AMPLIFIERS

Rev A5 010207

2-77

2

RF2126

POWER AMPLIFIERS

2-78

Rev A5 010207