Datasheet RF2125P, RF2125PPCBA Datasheet (RF Micro Devices)

RF2125P

2

Typical Applications

• PCS Communication Systems

• Digital Communication Systems

• DECT Cordless Applications

Product Description

The RF2125P is a high power, high efficiency linear
amplifierIC.Thedeviceismanufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta­tions requiring linear amplification operating between
1500 MHz and 2200MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead plas­tic package with a backside ground. The device is self­contained with the exception of the output matching net­work and power supply feed line. It produces a typical
output power level of 1W.

HIGH POWER LINEAR AMPLIFIER

• Commercial and Consumer Systems

• Portable Battery-Powered Equipment

-A-

0.05

±0.05

1.40

±0.10

1.70

±0.10

NOTES:

1. Shaded lead is pin 1.

2. Lead coplanarity - 0.10 with respect to datum "A".

Heat Sink

4.90

±0.10

8° MAX

0° MIN

3.90

±0.10

6.00

±0.20

Dimensions in mm.

0.60

±0.15

0.43

±0.05

1.27

0.22

±0.03

Exposed

±0.10

2

POWER AMPLIFIERS

2.70

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

RF IN

RF IN

PC

VCC

ü

SiGe HBT

1

2

3

4

BIAS

CIRCUIT

PACKAGE BASE

GND

Si CMOS

8

RF OUT

7

RF OUT

6

RF OUT

5

RF OUT

Functional Block Diagram

Package Style: SOIC-8 Slug

Features

• Single 2.7V to 7.5V Supply

• 1W Output Power

•14dBGain

• 45% Efficiency

• Power Down Mode

• 1500MHz to 2200MHz Operation

Ordering Information

RF2125P High PowerLinear Amplifier
RF2125P PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A4 010720

2-67

RF2125P

2

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (VCC) -0.5 to +7.5 V
Power Control Voltage (VPC) -0.5to+5V V
DC Supply Current 450 mA

Input RF Power +20 dBm
Output Load VSWR 20:1

Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to + 100 °C

Parameter

POWER AMPLIFIERS

Overall

Frequency Range 1500 to 2200 MHz
Maximum Output Power +28.5 dBm V

Maximum Output Power +29.5 dBm VCC=4.8V, PIN=+17dBm
MaximumOutput Power +29.0 +30 dBm V
Total Power Added Efficiency 45 % Maximum output, V
Total Power Added Efficiency 45 % Maximum output, V
Total Power Added Efficiency 40 45 % Maximum output, V
Small-signal Gain 12 14 dB

Second Harmonic -40 dBc
Third Harmonic -45 dBc
Fourth Harmonic -35 dBc
Isolation 15 dB V

Input VSWR 1.5:1 With external matching network; see appli-

Min. Typ. Max.

Specification

DC

Refer to “Handling ofPSOP and P SSOP Products”
on page 16-15 for special handling information.

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Unit Condition

T=25°C, VCC=6.0V, VPC=5.0V,
Z

=12Ω,Pin= 0dBm, Freq=188 5MHz,

LOAD

Idle current=180mA

=3.6V, PIN=+17dBm

CC

=6.0V, PIN=+17dBm

CC

=3.6V

CC

=4.8V

CC

=6.0V

CC

=0.2V

PC

cation schematic

Two-tone Specification

Average Two-Tone Power +27 dBm PEP-3dB
IM

IM
IM

3
5

7

-23 -30 dBc P

-35 dBc P

-45 dBc P

=+24dBm for each tone

OUT

=+24dBm for each tone

OUT

=+24dBm for each tone

OUT

Power Control

V

PC

PC Current 1 mA V

Power Control “OFF” 0.2 0.5 V Threshold voltage at device input

1.5 3.3 3.5 V To obtain 180mA idle current
=2.0V

PC

2mAV

PC

=3.5V

Power Supply

Power Supply voltage 2.7 to 7.5 V
Supply Current 200 360 500 mA P

Power Down Current 0.5 10 µAV

=+30dBm, VCC=6.0V

OUT

=0.2V

PC

2-68

Rev A4 010720

RF2125P

Pin Function Description Interface Schematic

1RFIN

2RFIN
3PC

4VCC

5RFOUT

6RFOUT
7RFOUT
8RFOUT

Pkg

GND

Base

RF input. This input is DC co upled, so an external blockingcapacitor is
required if this pin is connected to a DC path. An optimum match to
50Ω is obtained by providing an external series capacitor of 4.3pF and
then a shunt capacitor of 3.3pF; see the application schematic. Those
values are typical for1880MHz; other values may be required forother
frequencies.

Same as pin 1.
Power control pin. For obtaining maximum performance the voltage on

this pin can be usedto setcorrectbiaslevel. In a typical application this
is implemented by a feedback loop.The feedbackcan be based on the
actual supply current of the device, i.e. maintaining a fixed current level,
or it can be based on the RF output power level to maintain a fixed R F
power level (Automatic Level Control loop). A voltage of0.5V or lower
brings the part into power downstate.

Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.

RF output and bias for the output stage. The power supply forthe out­put transistor needs to be supplied to this pin. This can be done
through a quart er wave length microstrip line that is RF grounded at the
other end, or through an RF inductor that supports the required DC cur­rents. Optimum load impedance is achievedby providing a shunt
capacitor of 3.0pF and a series capacitor of 3.9pF; see the application
schematic. Those values are typicalfor 1880MHz; other values may be
required for other frequencies. Since there are several output pins
available, which are internally con nected, one pin can be used for con­necting the bias, another for connecting a (third) harmonic trap filter,
and the other pins for the RF output.

Same as pin 5.
Same as pin 5.
Same as pin 5.
Ground connection. Thebackside of the package should beconnected

to the ground plane through a short path, i.e., vias under the device
may be required.

2

POWER AMPLIFIERS

Rev A4 010720

2-69

RF2125P

Application Schematic

1880MHz Operat ion

2

0.01µF

4.3 pF
1

2

3

4

BIAS

CIRCUIT

PACKAGE BASE

8

3.9 pF

7

2.4 pF

6

5

33 nH

100 pF0.1µF

RF OUT

RF IN

3.6 pF

V

PD

V

CC

POWER AMPLIFIERS

2-70

Rev A4 010720

Evaluation Board Schemati c

(Download Bill of Materials from www.rfmd.com.)

RF2125P

P1-3

P1-1

RF IN

J1

P1-1

P1-3

50

Ω

P1

1
2
3

2125402 Rev -

VCC
GND

PC

C2
See Chart

C1
See Chart

C7
1nF

C9
100 nF

C5
1

µ

F

1

2

3

4

C8
1nF

Capacitors are ATC type.
The 2.7 pF capacitor is 2.4 pF in parallel with 0.3 pF.

BIAS

CIRCUIT

PACKAGE BASE

APPLICATION C1 (pF) C4 (pF)C3 (pF)C2 (pF)

DCS1800
(1710 to 1785 MHz)

DECT
(1880 to 1990 MHz)

Broadband and
Unlicensed PCS
(1850 to 1910 MHz)

8

7

6

5

3.3 7.5 3.6 3.9

3.0 3.9 2.7 3.6

3.6 4.3 2.4 3.9

L1
33 nH

C6
100 pF

C4
See Chart

C3
See Chart

RF OUT

50

Ω

J2

2

POWER AMPLIFIERS

Rev A4 010720

Broadband and
Unlicensed PCS
(1910 to 1970 MHz)

3.0 3.9 2.7 3.6

2-71

2

RF2125P

Evaluation Board Layout

1.0” x 1.5”

Board Thickness 0.031”; Board Material FR-4

POWER AMPLIFIERS

2-72

Rev A4 010720