Datasheet RF2125, RF2125PCBA Datasheet (RF Micro Devices)

RF2125

2

Typical Applications

• PCS Communication Systems

• Digital Communication Systems

• DECT Cordless Applications

Product Description

The RF2125 is a high power, high efficiency linear ampli­fier IC. The device is manufactured on an advanced Gal­lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta­tions requiring linear amplification operating between
1500 MHz and 2200MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead
ceramic package with a backs ide ground. The device is
self-contained with the exception of the output matching
network and power supply feed line. It produces a typical
output power level of 1W.

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

Si CMOS

od

r

P

ed

HIGH POWER LINEAR AMPLIFIER

• Commercial and Consumer Systems

• Portable Battery Powered Equipment

.050

4°MAX

0°MIN

.315
.305

.166

SQ

1

.017
.013

5P

12

.180 SQ MAX

Metal lid and base, gold plated

.057 MAX

.004
.000

RF2

.017

ct

u

.013

Package Style: SOP-8-C

Features

• Single 2.7V to 7.5V Supply

• 1W Output Power

•14dBGain

.006
.004

2

POWER AMPLIFIERS

1

RF IN

2

RF IN

3

PC

4

VCC

S

Functional Block Diagram

Rev A7 010112

CIRCUIT

ee

PACKAGE BASE

rad

Upg

BIAS

GND

8

7

6

5

RF OUT

RF OUT

RF OUT

RF OUT

• 45% Efficiency

• Power Down Mode

• 1500MHz to 2200MHz Operation

Ordering Information

RF2125 High PowerLinear Amplifier
RF2125 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

2-61

2

RF2125

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (VCC) -0.5 to +7.5 V
Power Control Voltage (VPC) -0.5 to +3.6V V
DC Supply Current 450 mA

Input RF Power +20 dBm
Output Load 20:1
Operating Case Temperature -40 to +100 °C
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to + 150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Parameter

POWER AMPLIFIERS

Overall

Frequency Range 1500 to 2200 MHz
Maximum Output Power +28.5 dBm V

Maximum Output Power +29.5 dBm V
MaximumOutput Power +29.3 +30 dBm VCC=6.0V, PIN=+17dBm
Total Power Added Efficiency 45 % Maximum output, V
Total Power Added Efficiency 45 % Maximum output, V
Total Power Added Efficiency 42 45 % Maximum output, V
Small-signal Gain 12 14 dB

Second Harmonic -40 dBc
Third Harmonic -45 dBc
Fourth Harmonic -35 dBc
Isolation 15 dB V

Input VSWR 1.5:1 With external matching network; see appli-

Two-tone Specification

IM

3

IM

5

IM

7

Power Control

V

PC

PC Current 1 mA V

Power Control “OFF” 0.2 0.5 V Threshold voltage atdevice input

Power Supply

Power Supply voltage 2.7 to 7.5 V
Supply Current 270 360 440 mA P

Power Down Current 0.5 10 µAV

Upg

Min. Typ. Max.

Specification

Unit Condition

T=25 °C, VCC=6.0V, VPC=3.5V,
Z

=12Ω,PIN= 0dBm, Freq=1885MHz,

LOAD

Idle current=180mA

=3.6V, PIN=+17dBm

CC

=4.8V, PIN=+17dBm

CC

5P

12

CC
CC
CC

=3.6V
=4.8V
=6.0V

RF2

ct

u

-25 -30 dBc P

-35 dBc P

-45 dBc P

1.5 3.3 3.5 V To obtain 180mA idle cu rrent

ed

2mAV

od

r

P

=0.2V

PC

cation schematic

=+23.5dBm for each tone

OUT

=+24dBm for each tone

OUT

=+24dBm for each tone

OUT

=2.0V

PC

=3.5V

PC

rad

=+30dBm, VCC=6.0V

OUT

=0.2V

PC

2-62

ee

S

Rev A7 010112

RF2125

Pin Function Description Interface Schematic

1RFIN

2RFIN
3PC

4VCC

5RFOUT

6RFOUT
7RFOUT
8RFOUT

Pkg

Base

GND

RF input. This input is DC co upled, so an external blockingcapacitor is
required if this pin is connected to a DC path. An optimum match to
50Ω is obtained by providing an external series capacitor of 4.3pF and
then a shunt capacitor of 3.3pF; see the application schematic. Those
values are typical for1880MHz; other values may be required forother
frequencies.

Same as pin 1.
Power control pin. For obtaining maximum performance the voltage on

this pin can be usedto setcorrectbiaslevel. In a typical application this
is implemented by a feedback loop.The feedbackcan be based on the
actual supply current of the device, i.e., maintaining a fixed current
level, or it can be based on the RF output power level to maintain a
fixed RF power level (Automatic Level Control loop). A voltage of 0.5V
or lower b rings the part into power down state.

Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.

RF output and bias for the output stage. The power supply forthe out­put transistor needs to be supplied to this pin. This can be done
through a quart er wave length microstrip line that is RF grounded at the
other end, or through an RF inductor that supports the required DC cur­rents. Optimum load impedance is achievedby providing a shunt
capacitor of 3.0pF and a series capacitor of 3.9pF; see the application
schematic. Those values are typicalfor 1880MHz; other values maybe
required for other frequencies. Since there are several output pins
available, which are internally con nected, one pin can be used for con­necting the bias, another for connecting a (third) harmonic trap filter,
and the other pins for the RF output.

Same as pin 5.
Same as pin 5.
Same as pin 5.
Ground connection. Thebackside of the package should beconnected

to the ground plane through a short path, i.e., vias under the device
may be required.

u

RF2

ct

12

5P

od

Application Schemati c

r

P

1880MHz

2

POWER AMPLIFIERS

S

Rev A7 010112

ee

RF IN

3.3 pF

rad

V

PD

Upg

100 nF

V

CC

5.1 pF

ed

1

2

3

4

BIAS

CIRCUIT

PACKAGE BASE

8

3.9 pF

7

3.3 pF

6

5

33 nH

100 pF100 nF

RF OUT

2-63

RF2125

Evaluation Board Schema t ic

1880MHz

(Download Bill of Materials from www.rfmd.com.)

2

RF IN

J1

P1-3

POWER AMPLIFIERS

P1-1

50 Ωµstrip

C2

5.1 pF

C1

3.3 pF

C7
1nF

C9
100 nF

C5
1 µF

C8
1nF

1

2

3

4

BIAS

CIRCUIT

PACKAGE BASE

8

7

6

5

L1
33 nH

C6
100 pF

C4

3.9 pF

C3

3.3 pF

P1-1

P1-3

50 Ωµstrip

P1

1
2
3

RF OUT

J2

VCC
GND

PC

5P

2125401 Rev A

PTI Package

Evaluation Board Layout

RF2

12

1.5” x 1.0”

Board Thickness 0.031”; Board Material FR-4

ct

u

od

r

P

2-64

ee

S

Upg

ed

rad

Rev A7 010112

RF2125

The data below is valid only under small-signal conditions. The device needs to be biased in Class A, with the out­put powe r below the 1-dB compression point. For large signal operation this data may be used as a starting point,
but fur ther tuning to optimize performance w ill be required.

Voltage and idle current have only very limited effect on the input and output impedances, hence only one plot is
shown, valid for V

26
24
22
20
18
16
14
12

Gain (dB)

10

8
6
4
2
0

1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6

=5to 7V,andICC=50 to 250mA.

CC

RF2125 Gain

Frequency (GHz)

DB(|S[2,1]|)
Vcc=6.5V, Icc=200mA

DB(GMax)
Vcc=6.5V, Icc=200mA

DB(|S[2,1]|)
Vcc=5.0V, Icc=50mA

DB(GMax)
Vcc=5.0V, Icc=50mA

5P

12

2

POWER AMPLIFIERS

RF2125 Input / Output Impedance, Class A bias

Swp Max

0

.

2

.

3

5.0

3.0

4.0

ed

0

.

0

.

2

-

2.5GHz

0

0

.

4

0

.

5

0

1

10.0

P

0

.

0

.

5

0

.

4

-

3

-

Swp Min

1GHz

0

.

r

0

-

1

-

2.5 GHz

2

.

0

0

2

.

0

-

2.5 GHz

4

.

0

0.2

1GHz

4

.

0

-

6

.

0

1GHz

0.4

6

.

0

-

8

.

1.0-1.0

0

S11
S22

1.0

0.6

0.8

rad

8

.

0

-

Upg

2.0

ee

S

u

od

-33

-34

DB(|S[1,2]|)

RF2

RF2125 S12

ct

-35

S12 (dB)

-36

-37
1 1.5 2 2.5

FREQUENCY (GHz)

Rev A7 010112

2-65

2

RF2125

POWER AMPLIFIERS

5P

ee

S

Upg

rad

ed

12

RF2

ct

u

od

r

P

2-66

Rev A7 010112