Datasheet RF2119, RF2119PCBA Datasheet (RF Micro Devices)

Preliminary

RF2119

2

Typical Applications

•Two-WayPagers

• 915MHz ISM Band Equipment

• Spread-Spectrum Systems

Product Description

The RF2119 is a high-power, high-efficiency amplifier IC
targeting 2V to 4V handheld systems. The device is man­ufactured on an advanced Gallium Arsenide Heterojunc­tion Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 960MHz band. The
device is well suited for either CW or pulsed applications.
At 3V, the RF2119 can deliver 29.5dBm of linear output
power. The device is self-contained with 50Ω input and
the output can be easily matched to obtain optimum
power, efficiency, and linearity characteristics. The pack­age is a PSSOP-16 with backsideground.

HIGH EFFICIENCY 2V POWER AMPLIFIER

• 3V AMPS/ETACS Cellular Handsets

•CDPDPortableDataCards

• Personal Digital Cellular

4.90 ± 0.10

8° MAX

0° MIN

3.90

±0.10

6.00 ± 0.20

0.60 ± 0.15

0.24

0.20

0.25 ± 0.05

0.635

1.40 ± 0.10

-A-

0.05 ± 0.05

3

Exposed
Heat Sink

1.70 ± 0.10

3

2.70 ± 0.10

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

GND

LMATCH

GND

VCC

GND1

RF IN

GND

BIAS1

ü

SiGe HBT

1

2

3

4

5

6

7

BIAS

8

CIRCUITS

PACKAGE BASE

GND

Si CMOS

BIAS2

16

NC

15

RF OUT

14

RF OUT

13

RF OUT

12

NC

11

NC

10

VPC

9

Functional Block Diagram

Package Style: PSSOP-16

Features

• Single 2V to 5V Supply

• 30dBm Output Power at 2.5V

• 30dB Small Signal Gain

• 53% Efficiency

• On-board Power Down Mode

• 800MHz to 960MHz Operation

Ordering Information

RF2119 High Efficiency 2V Power Amplifier
RF2119 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A8 010720

2-55

RF2119

Preliminary

2

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (RF off) +8.0 V
Supply Voltage +5.2 V
Control Voltage (VPC)+3.0V
Input RF Power +12 dBm

CW Dissipated Power 1.8 W
Peak Dissipated Power 2.5 W
Operating Case Temperature -30 to +110 °C
Storage Temperature -30 to +150 °C

Parameter

POWER AMPLIFIERS

Overall

Usable Frequency Range 800 902 960 MHz
Small Signal Gain 30 dB
Maximum CW Output Power 29.5 30.5 31.5 dBm Supply Voltage=2.5V

Maximum Pulsed Output Power 30 31 32 Supply Voltage=2.5V, 12.5% duty cycle

Total CW Efficiency 45 51 %
Pulsed Efficiency 47 53 % 12.5% duty cycle
Input Power 0 +2 +6 dBm
OFF Isolation -25 dBm V

Second Harmonic Suppression 45 dBc
Third Harmonic Suppression >60 dBc
Input VSWR <2:1 With a 50Ω source impeda nce
Output Load VSWR 10:1 No damage.

Specification

Min. Typ. Max.

31 32 34 dBm Supply Voltage=3.0V

32.5 33.5 35 dB m Supply Voltage=3.5V

29.3 dB m Supply Voltage=2.0V

31.5 33 34.5 Supply Voltage=3.0V, 12.5% duty cycle
33 34 35.5 Supply Voltage=3.5V, 12.5% duty cycle

AMPS Application #1

Frequency 824 to 849 MHz
Maximum Output Power 30.5 dBm
Efficiency @ Maximum Output

Power
Idle Current 195 250 mA
Second Harmonic Suppression -45 dBc
Current Total 760 mA

50 %

AMPS Application #2

Frequency 824 to 849 MHz
Maximum Output Power 29.5 30.5 dBm V

30.8 31.5 dBm V
32 33 dBm V

Efficiency @ Maximum Output

Power
Idle Current 120 mA
I

@ Maximum Output Power 20 mA

PC

50 55 %

DC

DC
DC

Refer to “Handling ofPSOP and P SSOP Products”
on page 16-15 for special handling information.

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Unit Condition

T=25°C, VCC=2.5V, VPC=2.2V,
Freq=902MHz, P

=0V,Input Power=+6dBm

PC

T=25°C, VCC=3.4V, VPC=1.8V,
Freq=836MHz, P

T=25°C, VCC=3.5V, VPC=1.6V,
Freq=836MHz, P
application schematic)

=2.7V

CC

=3.0V

CC

=3.5V

CC

=2dBm

IN

=+3dBm

IN

= +8dBm (see AMPS

IN

2-56

Rev A8 010720

Preliminary

RF2119

Parameter

Specification

Min. Typ. Max.

Unit Condition

Power Down C ontrol

Turn On/Off Time 100 ns
V

“OFF” Voltage 0.2 0.5 V

PC

“ON” Voltage 2.0 2.2 2.8 V

V

PC

“ON” Current 30 mA VPC=2.2V

I

PC

“OFF” Current 10 µA Standby, VPC=0.5V

I

PC

Power Supply

Voltage 2.5 V Specifications
Voltage 2.0 5.0 V Operating Limits
Current Total 700 900 1200 mA V

=2.5V,VPC=2.2V,

CC

P

=+3dBm,T=25°C

IN

2

POWER AMPLIFIERS

Rev A8 010720

2-57

2

RF2119

Preliminary

Pin Function Description Interface Schematic

1GND

2LMATCH

3GND

4 VCC1

5 GND1

6RFIN

7GND

POWER AMPLIFIERS

8BIAS1

9 VPC

10 NC
11 NC
12 RF OUT

13 RF OUT
14 RF OUT
15 NC
16 BIAS2

Pkg

GND

Base

Ground extern ally.
Interstage tuning. This pin is internally DC blocked and will connectto a

shunt inductor or microstrip line used for interstage tuning. Length from
pin to via should be approximately 6 0mils for 915MHz and 75mils for
902MHz and 120mils for 836MHz. The lumped element equ ivalent is

1.2nH to 2.0nH to ground, depending on frequency band of interest.
Ground extern ally.

Power supply for stage 1. VCCshould be fed through a 3.9nH inductor
with a decoupling capacitor on the V

Ground for stage 1. Keep traces physically short and connect immedi­ately to ground plane for best performance.

RF input. An external DC blocking capacitor is required if this port is
connected to a DC path to ground or a DC voltage.

Ground extern ally.
Ground return for the first stage bias. This pin should be connectedtoa

33nH inductor to ground.
Power control voltage. For maximum power, this voltage should be a t

least 2.2V. To turn off, this voltage should be less than 0.6 V. This pin
should be bypassed as close to the pin as practical.

No connection.
No connection.
RF output and power supply for the output stage. T he bias for the out-

put stage is provided through this pin and pin 13. An external matching
network is required to provide the optimum load impedance; see the
application schematics for details.

Same as pin 12.
Same as pin 12.
No connection.
Ground return for the second stage bias. This pin should be connected

to a 33nH inductor to ground.
Ground connection. The backside of the package should be soldered to

a top side ground pad which is connected to the ground plane with mul­tiple vias. The pad should have a short thermal path to the ground
plane.

CC

side.

2-58

Rev A8 010720

Preliminary

Application Schemati c

902MHz to 928MHz (V

=2.5V)

CC

RF2119

RF IN

RF IN

1

60 mils

V

CC

33 pF

3.9 nH

33 pF

33 nH

2

3

4

5

6

7

BIAS

8

CIRCUITS

PACKAGE BASE

33 nH

16

15

14

13

12

11

10

9

22 nH

22 nH

1.8 nH

12pF 5.6 pF

33 pF

33 pF

V

CC

2

1nF3.3µF

33 pF

RF OUT

POWER AMPLIFIERS

VPC

AMPS Application Schematic

824MHz to 849MHz (V

1

120 mils

V

CC

33 pF

2pF

15 nH

2pF

2

3

4

5

6

33 nH

16

15

14

13

12

11

=3.5V)

CC

22 nH

22 nH

2.2 nH

10 pF 6pF

33 pF

V

CC

1nF3.3µF

33 pF

RF OUT

Rev A8 010720

12 nH

33 nH

7

BIAS

8

CIRCUITS

PACKAGE BASE

10

9

33 pF

VPC

2-59

RF2119

Evaluation Board Schema t ic

824MHz to 928MHz (V

(Download Bill of Materials from www.rfmd.com.)

=3.5V)

CC

Preliminary

2

C8

1nF

P1

1
2
3

GND
GND
VCC

P1-1

C9

µ

3.3

RF OUT

P1-3

F

P2

1
2
3

C5

5.6 pF

C10

1nF

VPC
GND
GND

C2

33 pF

P1-1

C7

33 pF

P1-3

Drawing 2119400-

L1

1

60-120 mils

POWER AMPLIFIERS

P1-1

C6

33 pF

RF IN

Two Layer: (31 mils; w/plating)

L2

3.9 nH

C1

33 pF

L3

33 nH

PCB mat'l: FR-4;

2

3

4

5

6

7

BIAS

8

CIRCUITS

PACKAGE BASE

Off of Pin 2: 60 mil microstrip line for 902
MHZ to 928 MHz and 75 mil microstrip line
for 890 MHZ to 915 MHz and 120 mil for 824
MHz to 849 MHz. Lumped element off of Pin
2 would be 1.2 nH to 2.0 nH to ground
depending on frequency band of interest.

33 nH

16

15

14

13

12

11

10

9

L5 22nH

L6

22 nH

L4

1.8 nH

C4

12pF

C3

33 pF

2-60

Rev A8 010720

Preliminary

RF2119

Evaluation Board Layout

1.020” x 1.020”

2

POWER AMPLIFIERS

Rev A8 010720

2-61

2

RF2119

POWER AMPLIFIERS

Preliminary

2-62

Rev A8 010720