Datasheet RF2115L, RF2115LPCBA Datasheet (RF Micro Devices)

RF2115L

2

Typical Applications

• Analog Communication Systems

• Analog Cellular Systems (AMPS & TACS)

• 900MHz Spread-Spectrum Systems

Product Description

The RF2115L is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero­junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu­lar phone transmitters or ISM applications operating at
915 MHz. The device is packaged in a 16-lead ceramic
quad leadless chip carrier with a backside ground. The
device is self-contained with the exception of the output
matching network and power supply feed line. A two-bit
digital control provides 4 levels of power control, in 10dB
steps.

HIGH POWER UHF AMPLIFIER

• 400MHz Industrial Radios

• Driver Stage for Higher Power Applications

• Portable Battery-Powered Equipment

.150

.050

R.008

.033
.017

.258
.242

1

7

11

.050

.025

.098

.258
.242

.022
.018

.075
.065

RF2

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

Si CMOS

VCC2

NC

G20

NC

rad

G10

1141516

2

VCC3

VCC1

GND

PD

S

Functional Block Diagram

BIAS

CIRCUIT

3

4

5

ee

Upg

GAIN CONTROL

6789

RF IN

RF OUT

NC

ed

13

RF OUT

12

GND

11

RF OUT

10

RF OUT

P

od

r

ct

u

Package Style: QLCC-16

.098

Features

• Single 5V to 6.5V Supply

•Upto1.0WCWOutputPower

• 33dB Small Signal Gain

• 48% Efficiency

• Digitally Controlled Output Power

• Small Package Outline (0.25" x 0.25")

Ordering Information

RF2115L High Power UHF Amplifier
RF2115L PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev B1 010329

2-39

2

RF2115L

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (VCC) -0.5 to +8.5 V
Power Down Voltage (VPD) -0.5 to +5.0 V
Control Voltage (G10, G20) -0.5 to +5.5 V

DC Supply Current 700 mA
Input RF Power +12 dBm
Output Load 20:1
Operating Case Temperature -40 to +100 °C
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to + 150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Specification

+30 dBm V
+29.5 dBm V
+28.5 dBm V

40 48 %

Unit Condition

T=25°C, VCC=5.8V, VPD=5.0V, Z
P

=0dBm, Freq=840MHz

IN

higher output power; power may actually
decrease.

CC
CC
CC

=5.8V, Z

11

=5.0V, Z
=5.0V, Z

7

LOAD
LOAD
LOAD

CC

=12Ω
=9Ω
=12Ω

RF2

ct

u

od

G20 G10

r

+17 +20 +23 dBm 1 0

+7 +11 +13 dBm 0 1

-4 +2.5 +6 dBm 0 0

P

ed

75 125 175 mA 1 0
35 56 90 mA 0 1
21 38 50 mA 0 0

rad

V

A

PD

<0.1V

DC

does not result in

Output

Parameter

ee

Upg

POWER AMPLIFIERS

Overall

Frequency Range 430 to 930 MHz
Maximum CW Output Power +30.5 dBm Note that increasing V

Total CW Efficiency at Maximum
Small-signal Gain 33 dB

Second Harmonic -23 dBc Without external second har monic trap
Third Harmonic -36 dBc
Fourth Harmonic -35 dBc
Input VSWR <2:1
Input Impedance 50 Ω

Power Control

Output Power +30 +30.5 +36 dBm 1 1

Power Supply Current 350 415 600 mA 1 1

Idle Current 30 55 80 mA 1 1
Power Down “ON” 5.0 V Voltage supplied to the input; Part is “ON”
Power Down “OFF” 0 0.2 V Voltage supplied to the input; Part is “OFF”

Power Down Control

Power Down “ON” 5.0 V Voltage supplied to the input; Part is “ON”
Power Down “OFF” 0 0.2 V Voltage supplied to the input; Part is “OFF”
Current Drain 1 10 µ

Min. Typ. Max.

S

LOAD

=9Ω,

2-40

Rev B1 010329

RF2115L

Pin Function Description Interface Schematic

1VCC2

2VCC3

3VCC1

4GND

5PD

6RFIN

7G20

8G10

ee

S

9NC

Positive supply for the second stage (driver) amplifier. This is an
unmatched transistor collector output. This pin should see an inductive
pathtoACground(V

tance can be achieved with a short, thin microstrip line or with a low
value chip inductor (approximately 2.7nH). At lower frequencies, the
inductance value should be larger (longer microstrip line) and V

should be bypassed with a larger bypass capacitor (see the application
schematic for 430 MHz operation). This inductance for ms a matching
network with the internalseries capacitor between the second and third
stages, setting the amplifier’s frequency of m aximum gain. An addi­tional 1µFbypass capacitorinparallel with the UHFbypass capacitoris
also recommended, but placement of this component is not as critical.
In most applications, pins 1, 2, and 3 can share a single 1µF bypass
capacitor.

Positive supply for the active bias circuits. This pin can be externally
combined with pin 3 (VCC1) and the pair bypassed with a single UHF
capacitor, placed as close as possible to the package. Additional
bypassing of 1µF is also recommended, but proximity to the package is
not as critical. In most applications, pins 1, 2, and 3 can share a single
1µF bypass capacitor.

Positive supply for the first stage (input) amplifier. This pin can be exter­nally combined with pin 2 (VCC3) and the pair bypassed with a single
UHF capacitor, placed as close as possible to the package. Additional
bypassing of 1µF is also recommended, but proximity to the package is
not as critical. In most applications, pins 1, 2, and 3 can share a single
1µF bypasscapacitor.This pin can als o be used for coarse analog gain
control, even though it is not optimized for this function.

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance. In addition, for specified
performance, the package’s backside metal should be soldered to
ground plane.

Powerdown control voltage. When this pin is at 0V, the device will be in
power down mode, dissipating minimum DC power. When this pin is at
5V the device will be in full power mode delivering maximum available
gain and output power capability.This pin may also be used to perform
some degree of gain con trol or power control when set to voltages
between 0V and 5V. It is not optimized for this function so the transfer
function is not linear over a wide range as with other devices specifi­cally designed for analog gain control; however, it may be usable for
coarse adjustment or in some closed loop AGC systems. This pin
should not, in any circumstance, be higher in voltage than V

should it ever be higher than 6.5V. This pin should also have an exter­nal UHF bypassing capacitor.

Amplifier RF input. This is a 50Ω RF input port to the amplifier. It does
not contain internal DC blocking and therefore should be externally DC
blocked before connecti ng to any device which has DC present or

rad

which contains a DC path to ground. A series UHF capacitor is recom­mended for the DC blocking.

RF output power gain control MSB (see specification table for logic).
The control voltage at this pin should never exceed V

Upg

should also have an external UHF bypassing capacitor.
RF output power gain control LSB (see specification table for logic).

The control voltage at this pin should never exceed V
should also have an external UHF bypassing capacitor.
Not internally connected.

with a UHF bypassing capacitor). This induc-

CC

RF2

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P

ed

.Thispin

CC

.Thispin

CC

CC

11

, nor

CC

7

2

POWER AMPLIFIERS

Rev B1 010329

2-41

2

RF2115L

Pin Function Description Interface Schematic

10 RF OUT

POWER AMPLIFIERS

11 RF OUT
12 GND
13 RF OUT
14 RF OUT
15 NC
16 NC

Pkg

Base

GND

Amplifier RF output. This is an unmatched collector output of the final
amplifier transistor.It is internally connected to pins 10, 11, 13, and 14
to provide low series inductance and flexibility in output matching. Bias
for the final power amplifier output transistor must also be provided
through two of these four pins. Typically,pins 10 and 11 are connected
to a network that creates a second harmonic trap.For 830MH z opera­tion, this network is simply a single 2.4pF capacitor from both pin s to
ground. This capacitor series resonates with internal bond wires at two
times the operating frequency, effectively shor ting out the second har­monic. Shorting out this harmonic serves to increase the amplifier’s
maximum output power and efficiency, as well as to lower the level of
the second harmonic output. Typically, pins 13 and 14 are externally
connected very close to the package and used as the RF output with a
matching network that presents the optimum load impedance to the PA
for maximum power and efficiency, as well as providing DC blocking at
the output. An additionalnetwork of a bias inductor and parallel resistor
provides DC bias and helps to protect the output from high voltage
swings due to severe load mismatches. Shunt protection diodes are
included to clip peak voltage excursions above ap proximately 15V to
prevent voltage breakdown in worst case conditions.

Same as pin 10.
Same as pin 4.
Same as pin 10.
Same as pin 10.
Not internally connected.
Not internally connected.
This contact is the main ground contact for the entire device. Care

should be taken to ensure that this contact is well soldered in order to
prevent performance from being degraded from that indicated in the
specifications.

RF2

11

7

ct

u

2-42

ee

S

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rad

ed

od

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P

Rev B1 010329

Application Schemati c

430MHz

RF2115L

ee

S

PD
0/5 VDC

RF IN

V

CC

V

CC

Upg

PD
0/5 VDC

RF IN

100 pF

100 pF

100 pF

1

µ

F

1µF

rad

16 nH

1141516

2

BIAS

CIRCUIT

3

4

5

GAIN CONTROL

6789

22 pF 22 pF

BIT 1

0V/V

BIT 2
0V/V

CC

Application Schemati c

13

12

11

10

Ground Back of

Package

CC

RF2

840MHz

ct

u

100 pF

47 nH

180

od

r

0.01" x 0.2"

P

1141516

2

BIAS

CIRCUIT

3

4

GAIN CONTROL

5

6789

(PCB material: FR-4,

Thickness: 0.031")

100 pF

ed

100 pF

100 pF

100 pF

4.7 nH

16 pF

15 nH

13 pF

11

Ω

13

12

11

10

Ground Back of

Package

1.8 nH

2.4 pF

33 pF

15 pF

100 pF

7

RF OUT

6.8 pF

4.7 pF

2

POWER AMPLIFIERS

RF OUT

Rev B1 010329

100 pF 100 pF

BIT 1

0V/V

BIT 2
0V/V

CC

CC

2-43

RF2115L

Evaluation Board Schema t ic

840MHz Operation

(Download Bill of Materials from www.rfmd.com.)

2

P1

P1-3

C10
1

1

VCC

2

GND

PD

3

C9

µ

F

1nF

P1-1

C14

100 nF

P1-1

POWER AMPLIFIERS

P2-1

P2-3

P2

1
2
3

C8
100 nF

B2

GND

B1

C7
330 pF

(PCB mat'l: FR-4,

Thickness: 0.031")

C6
100 pF

0.01" x 0.2"

1141516

C11
100 nF

R3
180

L1
47 nH

Ω

L2

1.8 nH

2115400 Rev -

C2

6.8 pF

C12

4.7 pF

SMA

strip

J2

RF
OUT

50

Ω µ

7

P1-3

RF
IN

SMA

J1

2
C5
100 pFC4100 pF

C3
330 pF

50

Ω µ

strip

C1
100 pF

BIAS

CIRCUIT

3

4

GAIN CONTROL

5

6789

R1

u

1k

Ω

ct

RF2

R2
1k

Ω

13

12

11

10

11

C13

2.4 pF

2-44

ee

S

Upg

rad

ed

P

od

r

P2-3 P2-1

Rev B1 010329

Evaluation Board Layout

2” x 3”

RF2115L

2

POWER AMPLIFIERS

7

ee

S

Upg

rad

ed

11

RF2

ct

u

od

r

P

Rev B1 010329

2-45

2

RF2115L

POWER AMPLIFIERS

7

ee

S

Upg

rad

ed

11

RF2

ct

u

od

r

P

2-46

Rev B1 010329