Datasheet RF2105L, RF2105LPCBA Datasheet (RF Micro Devices)

RF2105L

2

Typical Applications

• 900 MHz ISM Band Applications

• 400 MHz Industrial Radios

• Digital Communication Systems

Product Description

The RF2105L is a high power, high efficiency linear
amplifierIC.Thedeviceismanufacturedonanadvanced
Gallium Arsenide HeterojunctionBipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital cellular phone transmitters or ISM
applications requiring linear amplification. It is packaged
in a 16-lead ceramic package with a backside ground.
The device i s self-contained with the exception of the out­put matching network and powersupply feed line.

HIGH POWER LINEAR UHF AMPLIFIER

• Driver Stage for Higher Power Applications

• Commercial and Consumer Systems

• Portable Battery-Powered Equipment

0.150

0.050

R0.008

0.258

0.242

1

0.208

0.192

0.258

0.242

0.022

0.050

0.018

sq.

0.075

0.065

0.033

0.017

0.080

0.025

0.080

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

VCC3

VCC1

GND

PD

ü

SiGe HBT

VCC2

NC

1141516

2

BIAS

CIRCUIT

3

4

5

6789

GND

RF IN

NC

NC

Si CMOS

RF OUT

13

12

11

10

NC

RF OUT

GND

RF OUT

RF OUT

Functional Block Diagram

Package Style: QLCC-16 Alumina

Features

• Single 2.7 V to 6.5V Supply

•Upto1.2WCWOutputPower

• 33dB Small Signal Gain

• 48% Efficiency

• Digitally Controlled Power Down Mode

• Small Package Outline (0.25" x 0.25")

Ordering Information

RF2105L High PowerLinear UHF Amplifier
RF2105L PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev B3 010720

2-19

2

RF2105L

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (VCC) -0.5 to +8.5 V
Power Down Voltage (VPD) -0.5 to +6.5 V
DC Supply Current 700 mA

Input RF Power +12 dBm
Output Load 20:1

Operating Case Temperature -40 to +100 °C
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to + 150 °C

DC
DC

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Parameter

Min. Typ. Max.

POWER AMPLIFIERS

Overall

Specification

Unit Condition

T=25°C, VCC=5.8V,VPD=5.8V,Z
P

=0dBm, Freq=840MHz

IN

Frequency Range 430 to 930 MHz
Maximum CW Output Power +30.8 dBm V

=5.8V,VPD=5.8V,Z

CC

Note that increasing V

LOAD

above 5.8V does

CC

not result in higher output power; power may
actually decrease.

+29.3 dBm V
+28.5 dBm V

+30 dBm V

+27.8 dBm V

+27 dBm V

=5.0V,VPD=5.0V,Z

CC

=4.4V,VPD=4.4V,Z

CC

=5.8V,VPD=5.8V,Z

CC

=5.0V,VPD=5.0V,Z

CC

=4.4V,VPD=4.4V,Z

CC

LOAD
LOAD
LOAD
LOAD
LOAD

CW Efficiency at Max Output 48 %
DC Current at Max Output 450 mA
Small-signal Gain 33 dB
Second Harmonic -23 dBc Without external second harmonic trap
Third Harmonic -36 dBc
Fourth Harmonic -35 dBc
Input VSWR <2:1 With external matching network; see appli-

cation schematic

Input Impedance 50 Ω With external matching network; see appli-

cation schematic

Two-Tone Specification

Average Two-Tone Power +27.0 dBm PEP-3dB
IM

IM
IM

3
5

7

-30 -25 dBc P

-32 -30 dBc P

-40 dBc P

=+24.0dBm/tone

OUT

=+24.0dBm/tone

OUT

=+24.0dBm/tone

OUT

Two-Tone Current Drain 225 260 350 mA
Two-Tone Power-Added Eff. 33 %

Power Control

Power Down “ON”
PowerD own “OFF”

PD Input Current

V

CC

V

0V

3.7 5.0 mA

Voltage supplied to the input
Voltage supplied to the input

Only in “ON” state

Power Supply

Power Supply Voltage 2.7 to 6.5 V
Total Idle Current Drain 2 10 µ

60 mA V
80 mA V

80 100 165 mA V

120 mA V

DC

VPD<0.1VDC,VCC=6.5V

A

=4.4VDC,VCC=6.5V

PD

=5.0VDC,VCC=6.5V

PD

=5.8VDC,VCC=6.5V

PD

=6.5VDC,VCC=6.5V

PD

=9Ω

=9Ω
=9Ω
=12Ω
=12Ω
=12Ω

LOAD

=9Ω,

2-20

Rev B3 010720

RF2105L

Pin Function Description Interface Schematic

1VCC2

2VCC3

3VCC1

4GND

5PD

6RFIN

7GND
8NC
9NC

Positive supply for the second stage (driver) amplifier. This is an
unmatched transistor collector output. This pin should see an inductive
pathtoACground(V

tance can be achieved with a short, th in microstrip line or with a low
value chip inductor (~2.7nH). At lower frequencies, the inductance
value should be larger (longer microstrip line) and V

bypassed with a larger bypass capacitor (see the application schematic
for 430MHz operation). This inductance forms a matching network with
the inter nal series capacitor between the second and third stages, set­ting the amplifier’s frequency of maximum gain. An additional 1µF
bypass capacitor in parallel with the UHF bypass capacitor is also rec­ommended, but placement of this component is not as critical. In most
applications, pins 1, 2, and 3 can share a single 1µF bypass capacitor.

Positive supply for the active bias circuits. This pin can be externally
combined with pin 3 (VCC1) and the pair bypassed with a single UHF
capacitor, placed as close as possible to the package.Additional
bypassing of 1µF isalso recommended, but proximity to the package is
not as critical. In most applications, pins 1, 2, and 3 can share a single
1µF bypass capacitor.

Positive supply for the first stage (input) amplifier. This pin can be exter­nally combined with pin 2 (VCC3) and the pair bypassed with a single
UHF capacitor, placed as close as possible to the package. Additional
bypassing of 1µF is also recommended, but proximity to the package is
not as critical. In most applications, pins 1, 2, and 3 can share a single
1µF bypass capacitor.

Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.In addition, for specified per­formance, the package’s backside metal should be soldered to ground
plane.

Powerdown controlvoltage. When thispin isat 0V,the device will bein
power down mode, dissipating minimum DC power. When this pin is at

(3V to 6.5V), the device will be in full power mode delivering maxi-

V

CC

mum available gain and output power capability. This pin may also be
used to perfor m some degree of gain control orpower control when set
to voltages between 0V and V

the transfer function is not linear over a wide range as with other
devices specifically designed for analog gain control; however, it may
be usable for coarse adjustment or in some closed loop AGC systems.
This pin should not, in any circumstance, be higher in voltage thanV

nor should it ever be higher than 6.5V. This pin should also have an
external UHF bypassing capacitor.

Amplifier RF input. This is a 50Ω RF input port to the amplifier. It does
not contain internal DC-blocking and therefore should be externally
DC-blocked before connecting to any device which has DC present or
which contains a DC path to ground. A series UH F capacitor is recom­mended for the DC-blocking.

Same as pin 4.
Not internally connected.
Not internally connected.

with a UHF bypassing capac itor). This induc-

CC

should be

CC

. It is not optimized for this function so

CC

CC

,

2

POWER AMPLIFIERS

Rev B3 010720

2-21

2

RF2105L

Pin Function Description Interface Schematic

10 RF OUT

POWER AMPLIFIERS

11 RF OUT
12 GND
13 RF OUT
14 RF OUT
15 NC
16 NC

Pkg

GND

Base

Amplifier RF output. This is an unmatched collector output of the final
amplifier transistor.It is internally connected to pins 10, 11, 13, and 14
to provide low series inductance and flexibility in output matching. Bias
for the final power amplifier output transistor must also be provided
through two of these four pins. Typically, pins 10 and 11 are connected
to a network that creates a second harmonic trap. For 830MHz opera­tion, this network is simply a single 2.4pF capacitor from both pins to
ground. This capacitor series resonates with internal b ond wires at two
times the operating frequency,effectively shorting out the second har­monic. Shorting out this harmonic serves to increase the amplifier’s
maximum output power and efficiency, as well as to lower the level of
the second harmonic output. Typically, pins 13 and 14 are externally
connected very close to the package and used as the RF output with a
matching network that presents the optimum load impedance to the PA
for maximum power and efficiency, as well as providing DC-blocking at
the output. An additionalnetwork of a bias inductor and parallel resistor
provides DC bias and helps to protect the output from high voltage
swings due to severe load mismatches. Shunt protection diode s are
included to clip peakvoltage excursions above ~15V to prevent voltage
breakdown in worst case conditions.

Same as pin 10.
Same as pin 4.
Same as pin 10.
Same as pin 10.
Not internally connected.
Not internally connected.
This contact is the main ground contact for the entire device.Care

should be taken to ensure that this contact is well soldered in order to
prevent performance from being degraded from that indicated in the
specifications.

2-22

Rev B3 010720

RF2105L

Application Schematic for 430MHz Operation

V

CC

220 nH

100 pF

1141516

BIAS

CIRCUIT

6789

180

Ω

13

12

11

10

Ground Back of
Package

4.7 nH

10 pF

33 pF

13 pF

PD

RF IN

1µF

100 pF

10

100 pF

100 pF

100 pF

Ω

15 nH

2

3

4

1nF

5

Application Schematic for 840MHz Operation

V

CC

47 nH

2

RF OUT

POWER AMPLIFIERS

PD
0/5 V

RF IN

1µF

0.01" x 0.20"

(PCB material: FR-4,

Thickness: 0.031")

100 pF

2

3

100 pF

DC

100 pF

100 pF

4

5

100 pF

1141516

BIAS

CIRCUIT

6789

180

Ω

13

12

11

10

Ground Back of
Package

1.8 nH

2.4 pF

6.8 pF
RF OUT

4.7 pF

Rev B3 010720

2-23

RF2105L

Application Schematic for 915MHz Operation

V

CC

47 nH

2

1µF

0.01" x 0.15"

(PCB material: FR-4,

Thickness: 0.031")

100 pF

2

3

100 pF

POWER AMPLIFIERS

PD
0/5 V

DC

RF IN

100 pF

4

5

100 pF

100 pF

1141516

BIAS

CIRCUIT

6789

180

Ω

13

12

11

10

Ground Back of
Package

5.6 pF
RF OUT

3.9 pF

1.8 pF

Evaluation Board Schema tic (840MHz)

(Download Bill of Materials from www.rfmd.com.)

L1

P1-1 2105400 Rev A

C10
1

µ

C9

F

1nF

C8
100 nF

C7
330 pF

C6
100 pF

C11
100 nF

47 nH

R3
180

Ω

RF IN

2-24

P1-3

SMA

J1

0.01"x0.2"

PCB mat'l: FR-4,

Thickness: 0.031"

1141516

2
C5
100 pF

C1

50

Ω µ

strip

100 pF

C4
100 pF

C3
330 pF

BIAS

CIRCUIT

3

4

5

6789

13

12

11

10

L2

1.8 nH
C12

4.7 pF

C13

2.4 pF

C2

6.8 pF

C12 is adjusted for 840 MHz

P1-1

C14

100 nF

P1-3

50

Ω µ

strip

P1

1
2
3

SMA

J2

RF OUT

VCC
GND

PD

Rev B3 010720

Evaluation Board Layout

Board Size 3.020” x 2.020”

Board Thickness 0.031”, Board Material FR-4

RF2105L

2

POWER AMPLIFIERS

Rev B3 010720

2-25

2

RF2105L

POWER AMPLIFIERS

2-26

Rev B3 010720