Datasheet RD65FV04, RD65FV05, RD65FV06, RD65FV01, RD65FV02 Datasheet (DYNEX)

RD65FV

RD65FV

Rectifier Diode

Target Information

Replaces November 2000, version DS5408-1.1 DS5408-2.0 October 2001

FEATURES

■ Optimised For High Current Rectifiers

■ High Surge Capability

■ Very Low On-state Voltage

APPLICATIONS

■ Electroplating

■ Power Supplies

■ Welding

VOLTAGE RATINGS

Part and Ordering

Number

RD65FV06
RD65FV05
RD65FV04
RD65FV03
RD65FV02
RD65FV01

Repetitive Peak

Reverse Voltage

V

RRM

V

600
500
400
300
200
100

ORDERING INFORMATION

Conditions

V

= V

RSM

RRM

KEY PARAMETERS
V

RRM

I

F(AV)

I

FSM

(max) 11745A
(max) 162000A

Outline type code: V

(See Package Details for further information)

Fig. 1 Package outline

600V

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

RD65FV04

Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.

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RD65FV

CURRENT RATINGS

T

= 75oC unless otherwise stated

case

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

Mean forward current

RMS value

F

Continuous (direct) forward current

Half wave resistive load 11745 A

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

T

= 85oC unless otherwise stated

case

Symbol

Mean forward current

RMS value

Continuous (direct) forward current

Parameter

Half wave resistive load 7632 A

Test Conditions

Double Side Cooled

I

F(AV)

Mean forward current

Half wave resistive load

UnitsMax.

- 18450 A

- 16974 A

- 11988 A

- 10079 A

Max.

Units

11120

A

I

F(RMS)

I

F

RMS value

Continuous (direct) forward current

Single Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load

-

-

17500

16000

7200

-

-

11300

9450

A

A

A

A

A

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SURGE RATINGS

RD65FV

Symbol

I

FSM

I2t

I

FSM

I2t

Surge (non-repetitive) forward current

2

t for fusing

I

Surge (non-repetitive) forward current

2

t for fusing

I

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Test Conditions

10ms half sine, T

= 50% V

V

R

10ms half sine, T

V

R

case

- 1/4 sine

RRM

case

= 0

= 175˚C

= 175˚C

Test Conditions

Double side cooled DC

Single side cooled Anode DC

Cathode DC

Clamping force 43.0kN Double side

(with mounting compound) Single side

Min.

-

-

-

-

-

Max.

130

84.5 x 10

162

132 x 10

Max.

0.0075

0.015

0.015

0.002

0.004

6

6

Units

kA

2

A

s

kA

2

s

A

Units

˚CW

˚CW

˚CW

˚CW

˚CW

T

vj

T

stg

F

m

Virtual junction temperature

Storage temperature range

Clamping force

CHARACTERISTICS

Symbol

I

RM

I

rr

Q

S

V

TO

r

T

Peak reverse current

Peak reverse recovery current

Total stored charge

Threshold voltage

Slope resistance

Parameter

Forward (conducting)

Reverse (blocking)

Test Conditions

, T

At V

RRM

= 2000A, dIRR/dt = 3A/µs,

I

F

= 200˚C, VR = 100V

T

case

= 200˚C

At T

vj

= 200˚C

At T

vj

= 200˚C

case

-

-

–55

38.7

Min.

-

-

-

-

-

225

200

200

47.3

Max.

150

230

39

0.6

0.0225

˚C

˚C

˚C

kN

Units

mA

A

µC

V

mΩ

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RD65FV

CURVES

8000

Tj = 200˚C

7000

6000

- (A)

F

5000

4000

3000

2000

Instantaneous forward current, I

1000

0

0.5 0.55 0.6 0.65 0.7 0.75 0.8
Instantaneous forward voltage, V

- (V)

F

16000

14000

12000

10000

8000

6000

4000

Mean power dissipation - (W)

2000

dc

1/2 wave
3 phase
6 phase

0

0 2000 4000 6000 8000 10000 12000 14000

Mean forward current, I

Fig. 2 Maximum (limit) forward characteristics Fig. 3 Power dissipation

F(AV)

- (A)

10000

I

F

Q

S

Conditions:
T

= 200˚C

j

V

R

I

= 2000A

F

dI/dt

Max. I

- (µC)

I

S

RM

RR

1000

Max. Q

Stored charge Q

100

0.1 1.0 10 100
Rate of decay of forward current dI/dt - (A/µs)

Fig. 4 Maximum stored charge and reverse recovery current vs dI/dt

= 100V

S

1000

Reverse recovery current I

100

RR

- (A)

10

4/7

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RD65FV

280

I2t = Î2 x t

2

240

200

160

120

Peak half sine forward current - (kA)

80

100

80

60

40

20

40

1101235102050

ms Cycles at 50Hz

Duration

Fig. 5 Surge (non-repetitive) forward current vs time

(with 50% V

RRM

@ T

= 175˚C)

case

I

2

t value - (A

2

s x 10

6

)

0.0001

0.1

Anode side cooled

0.01
Double side cooled

0.001

Thermal impedance - ˚C/W

0.001 0.01 0.1 1.0 10 100

Conduction

Halfwave

3 phase 120˚

6 phase 60˚

Time - (s)

Effective thermal resistance

Junction to case ˚C/W

Double side

d.c.

0.0075

0.0085

0.0092

0.0120

Anode side

0.015

0.016

0.0167

0.0194

Fig. 6 Maximum (limit) transient thermal impedance

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RD65FV

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

Holes Ø3.6 x 2.0 deep (In both electrodes)

Cathode

Note:

1. Package maybe supplied with pins and/or tags.

Ø112.5 max

Ø73 nom

Ø73 nom

Nominal weight: 1100g

Clamping force: 43kN ±10%

Package outine type code: V

Anode

27.0

25.4

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RD65FV

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5408-2 Issue No. 2.0 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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