Datasheets RD30HVF1 Datasheet

MITSUBISHI RF POWER MOS FET

m

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W

DESCRIPTION

RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES

High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.

APPLICATION

For output stage of high power amplifiers in VHF band Mobile radio sets.

RoHS COMPLIANT

RD30HVF1-101is a RoHS compliant products.

RoHS compliance is indicate by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT

V

Drain to source voltage Vgs=0V 30 V

DSS

V

Gate to source voltage Vds=0V +/-20 V

GSS

Pch Channel dissipation Tc=25°C 75 W Pin Input power Zg=Zl=50Ω 2.5 ID Drain current - 7 Tch Channel temperature - 175 Tstg Storage temperature - -40 to +175 Rth j-c Thermal resistance junction to case 2.0

Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS (Tc=25

SYMBOL PARAMETER CONDITIONS

I

Zero gate voltage drain current VDS=17V, VGS=0V - - 130 uA

DSS

I

Gate to source leak current VGS=10V, VDS=0V - - 1 uA

GSS

VTH Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V

Pout Output power f=175MHz ,VDD=12.5V 30 35 - W

ηD

Drain efficiency Pin=1.0W, Idq=0.5A 55 60 - %

Load VSWR tolerance VDD=15.2V,Po=30W(PinControl)

, UNLESS OTHERWISE NOTED)

°C

f=175MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase)

OUTLINE DRAWING

22.0+/-0.3

18.0+/-0.3

7.2+/-0.5

7.6+/-0.3

1

2

3

2.8+/-0.3

0.10

W

A

°C

°C/W

MIN TYP MAX.

Ω

4-C1

6.6+/-0.3

14.0+/-0.4

R1.6

1.Drain

2.3+/-0.3

2.Source

3.Gate

5.1+/-0.5

3.0+/-0.4

LIMITS UNIT

No destroy -

UNIT:m

Note : Above parameters , ratings , limits and conditions are subject to change.

RD30HVF1

MITSUBISHI ELECTRIC

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10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W

TYPICAL CHARACTERISTICS

RD30HVF1

MITSUBISHI ELECTRIC

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10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W

DRAIN DISSIPATION VS.

AMBIENT TEMPERATURE

100

80

60

40

Pch(W)

20

CHANNEL DISSIPATION

0

0 40 80 120 160 200

AMBIENT TEMPERATURE Ta(°C)

Vds-Ids CHARACTERISTICS

10

Ta=+25°C

8

6

Ids(A)

4

2

0

0246810

Vds(V)

Vgs=5.5V

Vgs=5V

Vgs=4.5V

Vgs=4V

Vgs=3.5V

Vgs=3V

Vgs-Ids CHARACTERISTICS

10

Ta=+25°C Vds=10V

8

6

Ids(A)

4

2

0

012345

Vgs(V)

Vds VS. Ciss CHARACTERISTICS

200

Ta=+25°C

180

f=1MHz

160 140 120 100

80

Ciss(pF)

60 40 20

0

0 5 10 15 20

Vds(V)

Vds VS. Coss CHARACTERISTICS

140

Ta=+25°C

120

f=1MHz

100

80

60

Coss(pF)

40

20

0

0 5 10 15 20

Vds(V)

TYPICAL CHARACTERISTICS

RD30HVF1

MITSUBISHI ELECTRIC

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Vds VS. Crss CHARACTERISTICS

20

Ta=+25°C f=1MHz

16

12

8

Crss(pF)

4

0

0 5 10 15 20

Vds(V)

10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W

50

40

30

20

Po(dBm) , Gp(dB) , Idd(A)

10

0

Pin-Po CHARACTERISTICS

Ta= +25°C f= 175MHz Vdd= 12.5V Idq= 0.5A

0102030

Po

Gp

Pin(dBm)

Ｉｄｄ

100

η

ｄ

80

60

40

20

0

50

40

30

ηd(%)

20

Pout(W) , Idd(A)

10

0

Pin-Po CHARACTERISTICS

100

Po

80

ηd

Ta= 25°C f= 175MHz Vdd= 12.5V Idq= 0.5A

Idd

00.511.522.5 Pi n( W )

60

40

20

0

ηd(%)

80

60

40

Po ( W)

20

0

Vdd-Po CHARACTERISTICS

16

Ta= 25°C f= 175MHz Pin= 1.0W Idq= 0.5A Zg= ZI=50 ohm

468101214

Vdd(V)

Po

14

12

10

8

6

Idd

4

2

0

Idd(A)

Ids (A )

Vgs-Ids CHARACTERISTICS 2

8

Vds =10V Tc=-25~+75°C -25°C

6

+75°C

4

2

0

2345

Vgs(V)

+25°C

TEST CIRCUIT(f=175MHz)

RD30HVF1

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10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W

Vgg

Vdd

8.2kOHM

RF-i n

56pF

C1

L1

9.1kOHM

100OHM

175MHz

RD30HVF1

10pF

L2

L1

C3

C2

RF-OUT

56pF

100pF

8pF

100pF33pF

100

51

90

34

32

27

12

10

32

44

43pF 5pF

54

90

100

50pF

8

4.8

10.8

C1:2200pF 10uF in parallel

C2:2200pF*2 in parallel

C3:2200pF,330uF in parallel

L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

Note:Board material-Teflon substrate

micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm

Di mensi ons:mm

INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS

RD30HVF1

MITSUBISHI ELECTRIC

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10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W

f=175MHz Zout

f=135MHz Zout

f=175MHz Zin

f=146MHz Zin

Zo=10Ω

f=146MHz Zout

f=135MHz Zin

Zin , Zout

f Zin Zout

(MHz) (ohm) (ohm) Conditions

135 0.71-j7.67 1.72-j0.86 Po=40W, Vdd=12.5V,Pin=1.0W

146 0.94-j6.46 2.12-j0.78 Po=38W, Vdd=12.5V,Pin=1.0W

175 0.53-j5.34 1.87-j0.70 Po=35W, Vdd=12.5V,Pin=1.0W

RD30HVF1

MITSUBISHI ELECTRIC

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10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W

RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)

Freq.

[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

100 0.867 -172.4 8.747 72.7 0.015 -11.6 0.687 -166.3 150 0.879 -176.3 5.523 61.2 0.014 -18.8 0.723 -168.8 175 0.885 -177.5 4.571 56.4 0.013 -22.2 0.740 -169.6 200 0.888 -179.1 3.852 52.4 0.012 -24.2 0.760 -170.5 250 0.905 178.5 2.877 44.1 0.010 -26.2 0.806 -172.5 300 0.915 176.2 2.202 37.1 0.009 -27.0 0.825 -174.8 350 0.926 174.1 1.754 31.4 0.007 -24.4 0.853 -177.1 400 0.933 171.8 1.422 25.8 0.006 -18.5 0.879 -179.4 450 0.936 169.5 1.167 20.9 0.005 -8.2 0.887 178.4 500 0.945 167.6 0.985 17.2 0.004 8.0 0.902 176.1 550 0.950 165.6 0.842 13.3 0.005 21.6 0.914 174.1 600 0.951 163.6 0.725 9.8 0.005 35.6 0.918 172.2 650 0.954 161.7 0.635 7.2 0.005 45.7 0.928 170.2 700 0.957 159.9 0.559 3.7 0.007 53.5 0.933 168.4 750 0.962 158.2 0.495 1.3 0.007 58.4 0.936 166.6 800 0.963 156.5 0.449 -0.5 0.008 61.6 0.943 164.8 850 0.963 154.8 0.407 -3.8 0.009 60.7 0.947 163.3 900 0.963 153.2 0.366 -5.2 0.011 61.5 0.947 161.7

950 0.962 151.6 0.337 -6.6 0.011 63.1 0.953 159.9 1000 0.964 150.1 0.315 -9.9 0.013 65.6 0.955 158.7 1100 0.966 146.9 0.275 -12.1 0.015 62.3 0.958 155.5

S11 S21 S12 S22

RD30HVF1

MITSUBISHI ELECTRIC

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10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

RD30HVF1

Keep safety first in your circuit designs!

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