Datasheet RD16HHF1 Specification

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Page 1

Dimension in mm.

< Silicon RF Power MOS FET (Discrete) >

RD16HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

DESCRIPTION

RD16HHF1 is a MOS FET type transistor specifically

designed for HF RF power amplifiers applications.

FEATURES

High power gain:

Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz

Integrated gate protection diode

APPLICATION

For output stage of high power amplifiers in

HF band mobile radio sets.

RoHS COMPLIANT

RD16HHF1-501 is a RoHS compliant product.

OUTLINE DRAWING

. 0

/ + 2

. 3

. 0

/ +

+ 9

X A M 8

I M

. 2 1

5deg

note: Torelance of no designation means typical value.

9.1+/-0.7

2.5

9.5MAX

2.5

3.6+/-0.2

1.2+/-0.4

0.8+0.10/-0.15

. 0

/ + 1

. 3

1.3+/-0.4

0.5+0.10/-0.15

. 0

/ + 5

. 4

PINS 1:GATE 2:SOURCE 3:DRAIN

RoHS compliance is indicate by the letter “G” after the lot

marking.

This product include the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

Publication Date : Mar．2018

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< Silicon RF Power MOS FET (Discrete) >

RD16HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL

Drain to source voltage Vgs=0V 50 V

DSS

Gate to source voltage Vds=0V -5 to +10 V

GSS

Pch Channel dissipation Tc=25°C 56.8 W

Pin Input power Zg=Zl=50 0.8 W

ID Drain to source current - 5 A

Tch Channel temperature - 150

Tstg Storage temperature - -40 to +150

Rth j-c Thermal resistance junction to case 2.2

Note 1: Above parameters are guaranteed independently.

PARAMETER CONDITIONS RATINGS UNIT

°C

°C/W

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER CONDITIONS

(Tc=25°C , UNLESS OTHERWISE NOTED)

LIMITS UNIT

MIN TYP MAX.

Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA

DSS

Gate to source leak current VGS=10V, VDS=0V - - 1 uA

GSS

VTH Gate threshold voltage VDS=12V, IDS=1mA 1.7 - 4.7 V

Pout Output power VDS=12.5V, Pin=0.4W, 16 19 - W

Drain efficiency f=30MHz, Idq=0.5A 55 65 - %

Load VSWR tolerance VDS=15.2V,Po=16W(Pin Control)

f=30MHz,Idq=0.5A,Zg=50

Load VSWR=20:1(All Phase)

Note : Above parameters , ratings , limits and conditions are subject to change.

No destroy -

Publication Date : Mar．2018

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< Silicon RF Power MOS FET (Discrete) >

RD16HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

TYPICAL CHARACTERISTICS

CHANNNEL DISSIPATION VS.

100

CHANNEL DISSIPATION Pch(W)

0 40 80 120 160 200

AMBIENT TEMPERATURE

AMBIENT TEMPERATURE Ta(°C)

Vds VS. Coss CHARACTERISTICS

100

Ta=+25°C f=1MHz

Vds VS. Ciss CHARACTERISTICS

Ta=+25°C f=1MHz

Ciss(pF)

0 5 10 15 20

Vds(V)

Vds VS. Crss CHARACTERISTICS

Ta=+25°C f=1MHz

Coss(pF)

0 5 10 15 20

Publication Date : Mar．2018

Vds(V)

Crss(pF)

0 5 10 15 20

Vds(V)

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< Silicon RF Power MOS FET (Discrete) >

RD16HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

TYPICAL CHARACTERISTICS

Pin-Po CHARACTERISTICS

Ta=+25°C f=30MHz Vds=12.5V Idq=0.5A

100

ηd

ηd(%)

Po(dBm) , Gp(dB) , Ids(A)

0 10 20 30

Pin(dBm)

Pin-Po CHARACTERISTICS

Ta=25°C

f=30MHz Vds=12.5V Idq=0.5A

ηd

Ｉds

100

Po(W) , Ids(A)

Ids

0.0 0.2 0.4 0.6 0.8 Pin(W)

Vds-Po CHARACTERISTICS

Ta=25°C f=30MHz Pin=0.6W Idq=0.5A

Zg=ZI=50 ohm

ηd(%)

Po(W)

4 6 8 10 12 14

Publication Date : Mar．2018

Vds(V)

Ids

Ids(A)

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< Silicon RF Power MOS FET (Discrete) >

RF_OUT

L5 : 4Turns,I.D5.6mm,D0.9mm,P=1mm enamele wire

RD16HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

TEST CIRCUIT(f=30MHz)

1000pF

22000pF

0.1μF22000pF

0.1μF

8.2kΩ

VDSVGS

0.1μF22000pF1000pF

200μF

50μH

RD16HHF1

100pF

L3 L4

200pF

Dimensions : mm Note : Board material PTFE substrate micro strip line width=4.2mm/50Ω,er=2.7,t=1.6mm

RF_IN

470pF

1kΩ

100

27Ω

270Ω

470pF

1.5

L1 : 9Turns,I.D5.6mm,D0.9mm enamele wire L2 : 5Turns,I.D5.6mm,D0.9mm enamele wire L3 : 5Turns,I.D5.6mm,D0.9mm,P=1mm enamele wire L4 : 10Turns,I.D5.6mm,D0.9mm enamele wire

INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS

88pF

200pF

100

470pF

Zin , Zout

(MHz)

Publication Date : Mar．2018

Zo=50Ω

f=30MHz Zin*

f=30MHz Zout*

Zin* Zout*

)

（Ω

（Ω)

58.55+j30.92 2.93+j3.51 Po=20W , Vds=12.5V , Pin=0.4W

Zin* : Complex conjugate of input impedance

Zout* : Complex conjugate of input impedance

Conditions

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< Silicon RF Power MOS FET (Discrete) >

RD16HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

Publication Date : Mar．2018

RD16HHF1 S-PARAMETER DATA (@Vds=12.5V, Id=500mA)

Freq.

[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

30 0.786 -107.5 52.246 117.6 0.017 37.8 0.540 -89.0 40 0.708 -120.6 40.758 106.9 0.017 30.4 0.521 -107.7 50 0.669 -129.4 33.102 99.5 0.017 27.3 0.516 -118.9 60 0.648 -135.6 27.688 93.8 0.017 25.4 0.516 -126.7 70 0.638 -139.9 23.761 89.2 0.017 25.2 0.521 -131.8 80 0.634 -143.3 20.737 85.2 0.016 25.0 0.527 -135.8

90 0.634 -146.1 18.350 81.6 0.016 26.6 0.536 -138.7 100 0.637 -148.3 16.405 78.3 0.016 28.4 0.545 -141.0 125 0.650 -152.5 12.830 71.1 0.015 36.0 0.574 -145.3 150 0.667 -155.5 10.443 65.0 0.015 47.4 0.606 -148.4 175 0.687 -158.0 8.723 59.3 0.016 58.1 0.632 -151.4 200 0.708 -160.4 7.390 54.0 0.018 68.4 0.664 -154.5 250 0.746 -164.7 5.529 44.9 0.025 80.2 0.718 -158.8 300 0.780 -168.7 4.302 36.4 0.034 85.1 0.758 -164.6 350 0.808 -172.6 3.449 29.6 0.045 86.2 0.803 -168.2 400 0.833 -176.3 2.802 22.5 0.055 84.5 0.826 -174.6 450 0.852 -179.8 2.341 17.2 0.066 82.8 0.853 -177.5 500 0.869 176.6 1.949 11.5 0.075 80.0 0.854 176.7 550 0.881 173.4 1.682 7.3 0.087 77.7 0.876 174.6 600 0.892 170.0 1.428 3.1 0.096 74.8 0.870 169.2 650 0.899 167.0 1.266 -0.3 0.108 71.8 0.894 167.0 700 0.907 163.8 1.101 -3.8 0.117 68.8 0.891 161.2 750 0.913 160.9 1.000 -7.3 0.130 65.4 0.904 158.9 800 0.919 157.7 0.876 -9.7 0.138 62.7 0.898 153.7 850 0.924 154.8 0.800 -13.1 0.150 58.7 0.912 150.9 900 0.927 151.7 0.715 -14.8 0.157 56.3 0.905 145.7 950 0.930 148.9 0.659 -18.4 0.168 51.6 0.902 142.3

1000 0.932 145.8 0.599 -18.8 0.175 49.7 0.906 137.4

S11 S21 S12 S22

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< Silicon RF Power MOS FET (Discrete) >

have

until cold after switch

his products without cause damage for human and

details

copies of the formal

(RF power transistors) are designed

other applications.

In particular, while these products are highly reliable for their designed purpose, they are not manufactured

quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed

In the application, which is base station applications and

off frequency

during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain

predicted operating life time of

an authorized Mitsubishi

therefore

device is

It is

sink in conjunction with other cooling methods as needed (fan,

lower than 120deg/C(in case of

6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to

extreme short current flow between the drain and the source of the device. These results causes in fire or

the

Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in

, please refer the last page

RD16HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

ATTENTION:

1.High Temperature ; This product might have a heat generation while operation,Please take notice that a possibility to receive a burn to touch the operating product directly or touch the product off. At the near the product,do not place the combustible material that have possibilities to arise the fire.

2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use t property per normal operation.

3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment.

PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:

1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional regarding operation of these products from the formal specification sheet. For specification sheets, please contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products

for consumer mobile communication terminals and were not specifically designed for use in

under a necessary for critical communications elements and fixed station applications that operate with long term continuous transmission and a higher on-

period and others as needed. For the reliability report which is described about Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or Semiconductor product distributor.

3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage appropriate ESD precautions are required.

4. In the case of use in below than recommended frequency, there is possibility to occur that the deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.

5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. recommended to utilize a sufficient sized heatetc.) to keep the channel temperature for RD series products Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.

injury.

7. For specific precautions regarding assembly of these products into the equipment, please refer to supplementary items in the specification sheet.

8. any way from it’s original form.

9. For additional “Safety first” in your circuit design and notes regarding the materials of this data sheet.

Publication Date : Mar．2018

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< Silicon RF Power MOS FET (Discrete) >

RD16HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

10. Please avoid use in the place where water or organic solvents can adhere directly to the product and the environments with the possibility of caustic gas, dust, salinity, etc. Reliability could be markedly decreased and also there is a possibility failures could result causing a serious accident. Likewise, there is a possibility of causing a serious accident if used in an explosive gas environment. Please allow for adequate safety margin in your designs.

11. Please refer to the additional precautions in the formal specification sheet.

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Keep safety first in your circuit designs!

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

•All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).

•When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.

•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.

Publication Date : Mar．2018