Datasheet RD06HHF1 Specification

Dimension in mm.

< Silicon RF Power MOS FET (Discrete) >

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V

DESCRIPTION

RD06HHF1 is a MOS FET type transistor specifically

designed for HF RF power amplifiers applications.

FEATURES

High power gain:

Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

Integrated gate protection diode

APPLICATION

For output stage of high power amplifiers in

HF band mobile radio sets.

RoHS COMPLIANT

OUTLINE DRAWING

4

.
0

-

/
+
2

.
3

6

.
0

-

/
+

4

.

3

.

0

-

2

/

1

+
9

X
A
M
8

.

N

4

I
M

3

.
2
1

1

2.5

5deg

note:
Torelance of no designation means typical value.

9.1+/-0.7

2

2

3

2.5

9.5MAX

3.6+/-0.2

1.2+/-0.4

0.8+0.10/-0.15

5

.

6

.

0

-

0

/

-

/

+

+

5

.

1

.

4

3

1.3+/-0.4

0.5+0.10/-0.15

PINS
1:GATE
2:SOURCE
3:DRAIN

RD06HHF1-501 is a RoHS compliant products.

RoHS compliance is indicated by the letter “G” after the lot marking.

This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1. Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

Publication Date : Jul．2018

1

< Silicon RF Power MOS FET (Discrete) >

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL

VDSS Drain to source voltage Vgs=0V 50 V

VGSS Gate to source voltage Vds=0V -5/+10 V

Pch Channel dissipation Tc=25°C 27.8 W

Pin Input power Zg=Zl=50 0.3 W

ID Drain current - 3 A

Tch Channel temperature - 150

Tstg Storage temperature - -40 to +150

Rth j-c Thermal resistance junction to case 4.5

Note 1: Above parameters are guaranteed independently.

PARAMETER CONDITIONS RATINGS UNIT

°C

°C

°C/W

ELECTRICAL CHARACTERISTICS

(Tc=25°C, UNLESS OTHERWISE NOTED)

SYMBOL

IDSS Drain cutoff current VDS=17V, VGS=0V - - 10 uA

IGSS Gate cutoff current VGS=10V, VDS=0V - - 1 uA

VTH Gate threshold Voltage VDS=12V, IDS=1mA 1.9 - 4.9 V

Pout Output power VDD=12.5V, Pin=0.15W,

Drain efficiency 55 65 - %

D

Load VSWR tolerance VDD=15.2V,Po=6W(Pin Control)

Note : Above parameters , ratings , limits and conditions are subject to change.

PARAMETER CONDITIONS

f=30MHz, Idq=0.5A

f=30MHz,Idq=0.5A,Zg=50

Load VSWR=20:1(All Phase)

LIMITS UNIT

MIN TYP MAX.

6 10 - W

No destroy -

Publication Date : Jul．2018

2

< Silicon RF Power MOS FET (Discrete) >

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V

TYPICAL CHARACTERISTICS

(These are only typical curves and devices are not necessarily guaranteed at these curves.)

CHANNNEL DISSIPATION VS.

40

30

20

10

CHANNEL DISSIPATION Pch(W)

0

5

4

3

AMBIENT TEMPERATURE

0 50 10 0 150

AMBIENT TEMPERATUR E Ta(°C)

Vds-Ids CHARACTERISTICS

Ta=+25℃

Vgs=10V

Vgs=9V

Vgs=8V

Vgs-Ids CHARACTERISTICS

5

Ta=+25℃
Vds=10V

4

3

Ids(A )

2

1

0

0 2 4 6 8 10

Vgs( V)

Vds VS. Ciss CHARACTERISTICS

60.0

Ta=+25℃
f=1MHz

40.0

Ids(A )

2

1

0

0 2 4 6 8 10

Vds VS. Coss CHARACTERISTICS

100.0

Ta=+25℃

80.0

60.0

40.0

Coss (pF)

20.0

f=1MHz

0.0
0 10 20 30

Publication Date : Jul．2018

Vds (V)

Vds( V)

Vgs=7V

Vgs=6V

Vgs=5V

Ciss(pF)

20.0

0.0
0 10 20 30

Vds (V)

Vds VS. Crss CHARACTERISTICS

10.0

Ta=+25℃

8.0

6.0

4.0

Crss(pF)

2.0

0.0

f=1MHz

0 10 20 30

Vds( V)

3

< Silicon RF Power MOS FET (Discrete) >

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V

TYPICAL CHARACTERISTICS

(These are only typical curves and devices are not necessarily guaranteed at these curves.)

Pin-Po CHARACTERISTICS

50

Ta=+25℃
f=30MHz
Vdd=12.5V

40

Idq= 0.5A

30

Gp

20

Po(dBm) , Gp(dB)

10

0

-10 -5 0 5 10 15 20 25

Pin(dBm)

Pin-Po CHARACTERISTICS

100

Po

ηｄ

80

60

40

20

0

ηd(%)

14

12

10

8

6

Pout(W) , Idd(A )

4

2

0

0 0.1 0.2 0.3

Idd

Pin(W)

Ta=25℃
f=30MH z
Vdd=12.5V
Idq= 0.5A

100

Po

90

80

70

ηd

ηd(%)

60

50

40

30

Publication Date : Jul．2018

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< Silicon RF Power MOS FET (Discrete) >

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V

TEST CIRCUIT(f=30MHz)

Publication Date : Jul．2018

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< Silicon RF Power MOS FET (Discrete) >

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V

INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS

Publication Date : Jul．2018

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< Silicon RF Power MOS FET (Discrete) >

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V

RD06HHF1 S-PARAMETER DATA (@Vds=12.5V, Id=500mA)

Freq.

[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

30 0.925 -55.8 49.826 147.6 0.015 63.9 0.787 -27.6
40 0.841 -69.4 44.143 134.5 0.018 53.2 0.721 -45.9
50 0.772 -80.3 38.820 124.7 0.019 45.7 0.664 -59.4
60 0.719 -89.4 34.224 117.0 0.020 39.8 0.621 -70.1
70 0.681 -96.6 30.413 110.8 0.020 36.0 0.588 -78.3
80 0.652 -102.8 27.245 105.6 0.021 33.3 0.562 -85.5

90 0.631 -108.1 24.623 101.1 0.020 31.4 0.543 -91.3
100 0.615 -112.6 22.402 97.0 0.020 30.0 0.532 -96.5
125 0.594 -121.7 18.113 88.6 0.020 29.4 0.517 -106.5
150 0.587 -128.0 15.093 81.9 0.018 33.3 0.522 -113.2
175 0.592 -133.3 12.896 75.9 0.018 39.0 0.528 -118.9
200 0.599 -137.8 11.184 70.5 0.017 47.5 0.543 -124.4
250 0.621 -144.8 8.698 61.1 0.019 67.1 0.583 -131.7
300 0.650 -150.6 7.056 52.5 0.025 81.3 0.615 -139.8
350 0.677 -155.8 5.841 45.2 0.033 88.9 0.661 -144.9
400 0.706 -160.5 4.923 37.6 0.043 90.6 0.687 -152.7
450 0.730 -165.0 4.222 31.5 0.054 91.0 0.726 -156.4
500 0.757 -169.6 3.619 24.6 0.065 88.8 0.743 -164.1
550 0.775 -173.7 3.184 19.6 0.078 86.9 0.778 -167.0
600 0.797 -178.0 2.766 13.6 0.089 83.3 0.783 -174.7
650 0.811 178.3 2.493 9.1 0.103 80.6 0.820 -177.0
700 0.828 174.0 2.184 3.8 0.114 76.8 0.817 175.3
750 0.842 170.6 2.008 -0.8 0.128 73.3 0.847 172.7
800 0.854 166.4 1.772 -5.2 0.138 69.6 0.839 165.4
850 0.868 163.0 1.641 -10.0 0.153 65.3 0.864 162.6
900 0.875 158.9 1.457 -13.5 0.161 62.1 0.856 155.3
950 0.889 155.7 1.359 -18.8 0.175 56.9 0.868 151.9

1000 0.893 151.5 1.214 -21.2 0.182 54.3 0.866 145.0

S11 S21 S12 S22

Publication Date : Jul．2018

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< Silicon RF Power MOS FET (Discrete) >

have

until cold after switch

Please take notice

his products without cause damage for human and

details

copies of the formal

(RF power transistors) are designed

other applications.

In particular, while these products are highly reliable for their designed purpose, they are not manufactured

quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed

In the application, which is base station applications and

off frequency

during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain

predicted operating life time of

an authorized Mitsubishi

therefore

device is

It is

sink in conjunction with other cooling methods as needed (fan,

lower than 120deg/C(in case of

6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to

extreme short current flow between the drain and the source of the device. These results causes in fire or

the

Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in

, please refer the last page

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V

ATTENTION:

1.High Temperature ; This product might have a heat generation while operation,Please take notice that
a possibility to receive a burn to touch the operating product directly or touch the product
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.

2.Generation of High Frequency Power ; This product generate a high frequency power.
that do not leakage the unnecessary electric wave and use t
property per normal operation.

3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.

PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:

1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
regarding operation of these products from the formal specification sheet. For
specification sheets, please contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products

for consumer mobile communication terminals and were not specifically designed for use in

under a
necessary for critical communications elements and
fixed station applications that operate with long term continuous transmission and a higher on-

period and others as needed. For the reliability report which is described about
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
Semiconductor product distributor.

3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
appropriate ESD precautions are required.

4. In the case of use in below than recommended frequency, there is possibility to occur that the
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.

5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
recommended to utilize a sufficient sized heat­etc.) to keep the channel temperature for RD series products
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.

injury.

7. For specific precautions regarding assembly of these products into the equipment, please refer to
supplementary items in the specification sheet.

8.
any way from it’s original form.

9. For additional “Safety first” in your circuit design and notes regarding the materials
of this data sheet.

Publication Date : Jul．2018

8

< Silicon RF Power MOS FET (Discrete) >

Keep safety first in your circuit designs!

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V

10. Please avoid use in the place where water or organic solvents can adhere directly to the product and the

environments with the possibility of caustic gas, dust, salinity, etc.

Reliability could be markedly decreased and also there is a possibility failures could result causing a

serious accident. Likewise, there is a possibility of causing a serious accident if used in an explosive gas

environment. Please allow for adequate safety margin in your designs.

11. Please refer to the additional precautions in the formal specification sheet.

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.

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© 2017 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Jul．2018

9