Datasheet RCJ330N25 Datasheet (ROHM)

Data Sheet

10V Drive Nch MOSFET

RCJ330N25

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage
V

garanteed to be ±30V .

GSS

4) High package power.

Application  Inner circuit

Switching

LPTS

10.1

9.0

13.1

1.24

1.0

3.0

2.54

0.78

5.08

(1) (2) (3)

4.5

1.3

0.4

1.2

2.7

Packaging specifications

Package Taping

Type

Code

TL

Basic ordering unit (pieces) 1000

RCJ330N25 

Absolute maximum ratings (Ta  25°C)

Parameter

Drain-source voltage V
Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I

Continuous I

Pulsed I

Avalanche current I

Avalanche energy E

Power dissipation (Tc=25C) P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

AS

AS

D

*3

*1

*3

*1

*2

*2

250 V

30 V

33 A

132 A

26 A

104 A

16.5 A

74.8 mJ

40 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L≒500H, V

*3 Limited only by maximum temperature allowed.

=50V, Rg=25, starting Tch=25°C

DD

(1) Gate
(2) Drain
(3) Source

∗1

(1) (3)(2)

1 BODY DIODE

 Thermal resistance

Parameter

Channel to Case Rth(ch-c) 3.12 C / W

* TC=25°C

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Symbol Limits Unit

*

1/6

2011.10 - Rev.A

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Data Sheet

RCJ330N25

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=±30V, VDS=0V

250 - - V ID=1mA, VGS=0V

--1AVDS=250V, VGS=0V

3-5VV

-77

*

*

l10 20 - SID=16.5A, VDS=10V

105

m

- 4500 - pF VDS=25V

- 220 - pF VGS=0V

- 130 - pF f=1MHz

- 50 - ns ID=16.5A, VDD 125V

*

- 200 - ns VGS=10V

*

- 120 - ns RL=7.6

*

- 140 - ns RG=10

*

- 80 - nC ID=33A,

*

- 25 - nC VDD 125V

*

- 27 - nC VGS=10V

*

=10V, ID=1mA

DS

ID=16.5A, VGS=10V

Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward Voltage V

*Pulsed

SD

*

- - 1.5 V Is=33A, VGS=0V

ConditionsParameter

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2011.10 - Rev.A

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Data Sheet

RCJ330N25

Electrical characteristic curves (Ta=25C)

0

5

10

15

20

25

30

35

0 1 2 3 4 5

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=5.5V

VGS=10.0V

VGS=7.0V

VGS=8.0V

VGS=6.0V

VGS=6.5V

Ta=25°C
Pulsed

0

5

10

15

20

25

30

35

0 10 20 30 40 50

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=6.0V

VGS=10.0V

VGS=5.5V

VGS=6.5V

VGS=7.0V

VGS=8.0V

Ta=25°C
Pulsed

0.001

0.01

0.1

1

10

100

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

2

3

4

5

6

-50 0 50 100 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V
I

D

=1mA

pulsed

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

50

100

150

200

250

300

-50 -25 0 25 50 75 100 125 150

Static Drain-Source On-State Resistance : R

DS(on)

[mΩ]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V
pulsed

ID=33A

ID=16.5A

3/6

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Data Sheet

RCJ330N25

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

2

4

6

8

10

12

14

0 10 20 30 40 50 60 70 80 90

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.11 Dynamic Input Characteristics

T

a

=25°C

V

DD

=125V

I

D

=33A

Pulsed

10

100

1000

10000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.12 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

°C

f=1MHz
VGS=0V

C

iss Coss

C

rss

0.001

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

50

100

150

200

250

300

0 2 4 6 8 10 12 14 16 18 20

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : VGS [V]

Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=33.0A

ID=16.5A

Ta=25°C
Pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.10 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

VDD≒125V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed

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Data Sheet

RCJ330N25

0.01

0.1

1

10

100

1000

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.13 Maximum Safe Operating Area

Operation in this area

is limited by RDS(on)

(VGS = 10V)

Ta=25°

C

Single Pulse

PW = 100μs

PW = 1ms

PW = 10ms

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse

Mounted

on epoxy board.

(25mm

× 27mm × 0.8mm)

Rth

(ch-a)

=74.7°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

5/6

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Data Sheet

RCJ330N25

F

it

%

V
V

F

S

V

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

I

V

R

L

V

DD

D

R

L

V

DD

Pulse width

DS

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

V

GS

R

G

D.U.T.

I

AS

V

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

DS

I

AS

V

DD

1

2

L

E

AS

=

I

AS

2

V

(BR)DSS

V

(BR)DSS

- V

V

DD

(BR)DSS

Fig.3-2 Avalanche Waveform

6/6

2011.10 - Rev.A

Notes

Notice

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