Datasheet RBO08-40G, RBO08-40M, RBO08-40T Datasheet (SGS Thomson Microelectronics)



RBO08-40G/M/T

ApplicationSpecificDiscretes

A.S.D.

FEATURES

8ADIODETOGUARDAGAINSTBATTERYRE­VERSAL.

NEGATIVEOVERVOLTAGEPROTECTIONBY
CLAMPING.

COMPLIANTWITHISO/DTR7637STANDARD
FORPULSES 1, 2,3a and 3b.

SUITABLE FOR AUTOPROTECTED ALTER­NATORENVIRONMENT.

BREAKDOWNVOLTAGE: 24V min.
CLAMPINGVOLTAGE:± 40 V max.
MONOLITHIC STRUCTURE FOR GREATER

RELIABILITY.

DESCRIPTION

Designedto protectagainstbatteryreversaland
overvoltagesin automotiveapplications,this
monolithiccomponentoffersmultiplefunctionsin
the samepackage:
D1 : reversedbattery protection
T1 : clampingagainst negativeovervoltages
T2 : Transilfunctionfor overvoltageprotection.

TM

OVERVOL TAGEPROTECT IONCIRCUI T (RBO)

REVERSEDBATTERYAND

D2PAK

RBO08-40G

PowerSO-10

RBO08-40M

TM

January1998 - Ed : 2

TO220AB

RBO08-40T

FUNCTIONAL DIAGRAM

1

3

2

1/14

RBO08-40G / RBO08-40M / RBO08-40T

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

I

FSM

Non repetitivesurgepeak forward current

tp = 10 ms 80 A

(DiodeD1)

I

F

P

PP

DC forwardcurrent(Diode D1) Tc = 75°C8 A
PeakpulsepowerbetweenInput andOutput

10/1000µs 600 W

(TransilT1) seenote 1 Tjinitial= 25°C

P

PP

T

stg

Tj

T

L

PeakpulsepowerbetweenPins 3 and 2 (10/1000µs) 1500 W
Storagetemperature range

Maximumjunction temperature
Maximumlead temperaturefor solderingduring 10 s

- 40 to+ 150
150

260 °C

at 4.5mm from case for TO220AB

Note 1 : for a surge greater than themaximum value, thedevice will fail inshort-circuit..
TM :PowerSO-10,TRANSIL and ASD are trademarks ofSGS-THOMSON Microelectronics.

THERMAL RESISTANCE

Symbol Parameter Value Unit

Rth (j-c)

Junctionto case

RBO08-40M
RBO08-40G

RBO08-40T

2.4

2.4

2.4

°C

°C/W

2/14

D1

T1

V

V

31 VRM31

CL

I13

31

F

I

T2

2

31

BR

V

IRM31

31

I

R

Ipp31

F13

V13



Ipp32

I

RM

I32

IR32

32

VRM32 V

32 V

R

B

1

V32

32

C

L

3

2

RBO08-40G / RBO08-40M / RBO08-40T

Symbol Parameter

V

RM31/VRM32

V

BR31/VBR32

I

R31/IR32

V

CL31/VCL32

V

F13

I

PP

αT

C

31/C32

Stand-offvoltage Transil T1 / TransilT2.
Breakdownvoltage TransilT1 / TransilT2.
LeakagecurrentTransil T1 / TransilT2.
ClampingvoltageTransil T1 / TransilT2.
Forwardvoltagedrop DiodeD1.
Peak pulsecurrent.
Temperaturecoefficientof V

BR

.

CapacitanceTransil T1 / TransilT2.

ELECTRICAL CHARACTERISTICS: DIODED1 (- 40°C< T

amb

Symbol Test Conditions

V

F13

IF=8A

RBO08-40M/G
RBO08-40T

V

F13

=8A@T

I

F

IF=4A

=25°C 1.45 V

amb

RBO08-40M/G
RBO08-40T

I

V

F13

=4A@T

F

IF= 1A 1.1 V
I

=1A@T

F

= 1A@ Tj= 85°C 0.9 V

I

F

=25°C

amb

=25°C 1.0 V

amb

ELECTRICAL CHARACTERISTICS: TRANSIL T1 (- 40°C<T

Symbol Test Conditions

V

BR 31

V

BR 31

I

RM31

I

RM31

V

CL31

αT TemperaturecoefficientofV

C

31

IR=1 mA 22 35 V
IR=1 mA, T

=25°C2432V

amb

VRM=20V 50 µA
VRM=20V,T
IPP=15A,Tjinitial=25°C

amb

=25°C

10/1000µs40V

BR

F = 1MHz VR= 0 V 1000 pF

<+85°C)

<+85°C)

amb

Value

Min. Typ. Max.

1.5 V

1.7 V

1.3 V

1.35 V

1.2 V

Value

Min. Typ. Max.

10 µA

910-4/°C

Unit

Unit

ELECTRICAL CHARACTERISTICS: TRANSIL T2 (- 40°C<T

Symbol Test Conditions

V

BR 32

V

BR 32

I

RM 32

I

RM 32

V

CL 32

αT
C

32

IR=1 mA 22 35 V
IR=1 mA, T

=25°C2432V

amb

VRM=20V 50 µA
VRM=20V,T
IPP= 37.5 A
Temperaturecoefficientof V

=25°C10µA

amb

10/1000µs40V

BR

F = 1MHz VR=0 V 2000 pF



amb

<+85°C)

Value

Min. Typ. Max.

Unit

8.5 10-4/°C

3/14

RBO08-40G / RBO08-40M / RBO08-40T

PRODUCTDESCRIPTION

1

2

BASICAPPLICATION

TheRBO has 3 functionsintegratedon thesame

3

chip.
D1 : “Diode function”in order to protect against

reversedbattery operation.
T2:“Transil function” in order to protect against

positive surge generated by electric systems

(ignition, relay. ...).

T1 : Protection againt negative surges such as
inductive overvoltages (see motor application
below).

* The monolithic multi-function protection
(RBO) has been developed to protect
sensitivesemiconductorsin car e lect ronic
modules against both overvoltage and
batteryreverse.

* In addition, the RBO circuit prevents
overvoltages generated by the module from
affecting the carsupply network.

MOTORDRIVER APPLICATION

BATTERY

Filter

D1

T2

T1

MOTOR

RBO

DEVICE MOTOR CONTROL

In thisapplication,onehalfofthemotordrivecircuitis suppliedthroughthe “RBO”and isthusprotected
as per its basic function application.
The secondpart is connecteddirectlyto the “carsupplynetwork” andis protectedas follows:

- Forpositive surges: T2 (clampingphase) and D1 in forward-biased.

- Fornegative surges: T1(clampingphase) and T2 inforward-biased.

4/14



2

PINOUTconfigurationin D

PAK:

-Input (1) : Pin1

-Output (3) : Pin3

-Gnd (2) : Connectedto base Tab

Marking : Logo, datecode, RBO08-40G

PINOUTconfigurationin PowerSO-10:

-Input (1) : Pin3

-Output (3) : Pin7 and9

-Gnd (2) : Connectedto base Tab

Marking : Logo, datecode, RBO08-40M

RBO08-40G / RBO08-40M / RBO08-40T

D1

T2

T1

TAB

Pin 1 (NC)
Pin 2 (NC)

Pin 3 (Input 1)

Pin 4 (NC)
Pin 5 (NC)

Input (1)

D1

Output(3)

T2

T1

Gnd (2)

Tab

Pin 10(NC)
Pin 9 (Ouput 3)

Pin 8 (NC)
Pin 7 (Ouput 3)
Pin 6 (NC)

PINOUTconfigurationin TO220AB:

-Input (1) : Pin1

-Output (3) : Pin3

-GND (2) : Connectedto base Tab

Marking : Logo, datecode, RBO08-40T

TOP VIEW

D1

T2

T1

(TAB)



5/14

RBO08-40G / RBO08-40M / RBO08-40T

Fig. 1 : Peak pulse power versus exponential

pulseduration(Tj initial = 85°C).

(kW)

p

P

p

10.0

5.0

2.0

1.0

Transil T 2

0.5

0.2

Diode D1

0.1
1 2 5 10 20 50 100

tp(ms)

Fig. 2-2 : Clamping voltage versus peak pulse

current (Tj initial =85°C).
Exponential waveform tp = 1 ms and tp = 20 µs

(TRANSILT1).

Fig. 2-1 : Clamping voltage versus peak pulse
current (Tj initial = 85°C).

Exponential waveform tp = 40 ms and tp = 1 ms
(TRANSILT2).

VCL(V)

45

40

tp = 40ms

35

tp = 1ms

30

Ipp(A)

25

0.1 0.2 0.5 1.0 5.0 10.0 20.0 50.0

Fig. 3 :

Relative variation of peak pulse power

2.0

versus junction temperature.

VCL(V)

50
45
40
35

tp = 1ms

tp = 20 s

µ

30

Ipp(A)

25

0.1 0.2 0.5 1.0 2.0 5.0 10.0 20.0 50.0 100.0

Ppp[Tj]/Ppp[Tj initial=85°C]

1.20

1.00

0.80

0.60

0.40

0.20

0.00
0 25 50 75 100 125 150 175

Tj initial(°C)

6/14



RBO08-40G / RBO08-40M / RBO08-40T

Fig. 4 :

Relative variation of thermal impedance

junctionto caseversuspulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.5

0.2

0.1
1E-3 1E-2 1E-1 1E+0 1E+1

Fig. 5-2 :

Peak forward voltage drop versus peak

tp (s)

forwardcurrent(typical values)- (DIODED1).

V(VFM )

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Tj=25°C

Tj=150°C

IFM (A)

0.1 1.0 10.0 20.0

Fig. 5-1 :

Peakforward voltage drop versus peak

forwardcurrent (typicalvalues)- (TRANSILT2).

V(V

FM )

2.0

1.8

1.6

1.4

1.2

Tj=25°C

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1.0 10.0 20.0

Tj=150°C

IFM (A)

Fig.6 : Relative variation of leakage current

versus junction temperature.

ORDERINGINFORMATION

RBO 08 - 40 M

ReversedBattery&
Overvoltageprotection

I

F(AV)

=8A

Package:
M = PowerSO-10

2

PAK

G=D
T =TO220AB

=40V

V

CL



7/14

RBO08-40G / RBO08-40M / RBO08-40T

PACKAGEMECHANICAL DATA

2

PAK Plastic

D

A

E

L2

L

L3

A1

B2
B

G

2.0 MIN.
FLATZONE

C2

C

A2

R

V2

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

D

B 0.70 0.93 0.027 0.037
B2 1.40 0.055

C 0.45 0.60 0.017 0.024

C2 1.21 1.36 0.047 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.28 0.393 0.405

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069

R 0.40 0.016

V2 0° 8° 0° 8°

FOOT-PRINT D

10.30

2

PAK

8.90

16.90

5.08

1.30

3.70

8/14



RBO08-40G / RBO08-40M / RBO08-40T

SOLDERINGRECOMMENDATION

The soldering process causes considerable
thermal stress to a semiconductor component.
This has to be minimized to assure a reliable and
extended lifetime of thedevice. The PowerSO-10
package can be exposed to a maximum
temperatureof 260°C for 10 seconds. However a
proper soldering of the package could be done at
215°C for 3 seconds. Any solder temperature
profile should be within these limits. As reflow
techniquesaremost commonin surfacemounting,
typical heating profiles are given in Figure 1,either
for mounting on FR4 or on metal-backed boards.
For each particular board, the appropriate heat
profile has to be adjusted experimentally. The
present proposal is just a starting point. In any
case, the following precautions have to be
considered:

- alwayspreheatthe device

- peak temperatureshould be at least30 °C
higherthanthe melting point of thesolder
alloychosen

Fig. 1 : Typicalreflowsoldering heat profile

-thermalcapacity of thebasesubstrate
Voids pose a difficult reliability problem for large
surface mount devices. Such voids under the
package result in poor thermal contact and the
high thermal resistance leads to component
failures. The PowerSO-10 is designed from
scratch to be solely a surface mount package,
hence symmetry in the x- and y-axis gives the
package excellent weight balance. Moreover, the
PowerSO-10offersthe uniquepossibilityto control
easily the flatness and quality of the soldering
process. Both the top and the bottom soldered
edges of the package are accessible for visual
inspection(soldering meniscus).
Coplanarity between the substrate and the
package can be easily verified. The quality of the
solder joints is very importantfor two reasons : (I)
poor quality solder joints result directly in poor
reliability and (II) solder thickness affects the
thermal resistance significantly. Thus a tight
control of this parameter results in thermally
efficientandreliable solder joints.

Temperature ( C)

250

o

o

245 C

o

215 C

200

Soldering

Cooli ng

150

Epoxy FR4

board

Preheating

100

Metal-backed

50

board

0

0 40 80 120 1 60 200 240 280 320 360

Time (s)



9/14

RBO08-40G / RBO08-40M / RBO08-40T

SUBSTRATES AND MOUNTINGINFORMATION

The use of epoxyFR4 boards is quite commonfor
surface mounting techniques,however, their poor
thermal conduction compromisesthe otherwise
outstanding thermal performance of the
PowerSO-10. Some methods to overcome this
limitationare discussedbelow.

One possibility to improve the thermal conduction
is the use of large heat spreader areas at the
copper layer of the PC board. This leads to a
reductionof thermal resistance to 35 °C for 6 cm
of theboard heatsink(see fig. 2).

Use of copper-filledthroughholes on conventional
FR4 techniqueswillincreasethe metallizationand

Fig.2 :

Mountingon epoxyFR4head dissipationbyextendingthe area of thecopperlayer

Copper foil

decrease thermal resistance accordingly. Using
a configurationwith 16holesunderthe spreaderof
the packagewitha pitchof1.8 mm and a diameter
of 0.7 mm, the thermal resistance (junction ­heatsink) can be reduced to 12°C/W (see fig. 3).
Besidethe thermaladvantage,thissolution allows
multi-layer boards to be used. However, a
drawback of this traditional material prevents its
use in very high power, high current circuits. For
instance, it is not advisable to surface mount
devices with currents greater than 10 A on FR4

2

boards. A Power Mosfet or Schottky diode in a
surfacemount power packagecan handleup to
around50 A ifbetter substratesare used.

FR4 board

Fig. 3 :

10/14

Mountingon epoxy FR4 byusingcopper-filledthrough holesfor heattransfer

Copperfoil

heattransferheatsink



FR4board

RBO08-40G / RBO08-40M / RBO08-40T

A new technology available today is IMS - an
Insulated Metallic Substrate. This offers greatly
enhanced thermal characteristics for surface
mount components.IMS is a substrateconsisting
of threedifferentlayers,(I)thebasematerialwhich
is availableas an aluminiumor a copper plate,(II)
a thermal conductive dielectrical layer and (III) a
copper foil, which can be etched as a circuitlayer.
Using this materiala thermalresistance of 8°C/W
with 40 cm

2

of board floating in air is achievable
(seefig.4).If evenhigherpoweristo bedissipated
an externalheatsinkcould be applied which leads
to an R
that R

(j-a) of 3.5°C/W (see Fig. 5), assuming

th

(heatsink-air) is equal to R

th

(junction-heatsink). This is commonly applied in
practice, leading to reasonable heatsink
dimensions. Often power devices are defined by

Fig.4 : Mountingon metalbacked board

Copper foil

Insulation

consideringthe maximumjunction temperature of
the device. In practice , however, this is far from
being exploited. A summary of various power
managementcapabilities is made in table 1 based
on a reasonabledeltaT of70°Cjunctionto air.

The PowerSO-1 0 concept also represents a n
attractive alternative to C.O.B. techniques.
PowerSO-10 offers devices fully tested at low
and high temperature. Mounting is simple - only
conventionalSMT is required- enablingthe users
togetrid ofbond wire problemsand the problemto
controlthe hightemperaturesoftsolderingaswell.
An optimized thermal managementis guaranteed

th

through PowerSO-10 as the power chips must in
any case be mounted on heat spreaders before
beingmountedonto the substrate.

Fig. 5 :

Mounting on metal backed board with an

externalheatsinkapplied

Copper foil

FR4board

Alumini um

Aluminium

heatsink

TABLE1

PowerSo-10packagemountedon Rth(j-a) PDiss

1.FR4usingtherecommendedpad-layout

2

2.FR4withheatsinkon board (6cm

)35°C/W 2.0 W

50 °C/W 1.5 W

3.FR4withcopper-filledthroughholesand externalheatsink applied 12 °C/W 5.8W

4. IMS floating in air (40 cm

5. IMS with externalheatsinkapplied

2

)8°C/W 8.8 W

3.5 °C/W 20W



11/14

RBO08-40G / RBO08-40M / RBO08-40T

PACKAGEMECHANICAL DATA

B

H

A1

Q

0.10A B

E3 E1

SEATING

PLANE

A

C

10

E

1

eB

0.25 M

6

E2

5

DETAIL”A”

D

h

D1

A

F

SEATING

PLANE

A1

L

DETAIL ”A”

a

E4

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 3.35 3.65 0.131 0.143

A1 0.00 0.10 0.00 0.0039

B 0.40 0.60 0.0157 0.0236
C 0.35 0.55 0.0137 0.0217
D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.299

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.299

12/14



DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e 1.27 0.05
F 1.25 1.35 0.0492 0.0531

H 13.80 14.40 0.543 0.567

h 0.50 0.019
L 1.20 1.80 0.0472 0.0708

Q 1.70 0.067

a0° 8°0° 8°

RBO08-40G / RBO08-40M / RBO08-40T

FOOTPRINT
MOUNTINGPAD LAYOUT

RECOMMENDED

Dimensionsin millimeters Dimensionsin millimeters

HEADERSHAPE

SHIPPINGTUBE

C

B

A

Surfacemount film taping: contactsalesoffice

A
B
C
Lengthtube

Quantityper tube

DIMENSIONS(mm)

TYP

18
12

0,8

532

50



13/14

RBO08-40G / RBO08-40M / RBO08-40T

PACKAGEMECHANICALDATA

TO220AB Plastic

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 14.23 15.87 0.560 0.625
a1 4.50 0.177
a2 12.70 14.70 0.500 0.579

B 10.20 10.45 0.402 0.411
b1 0.64 0.96 0.025 0.038
b2 1.15 1.39 0.045 0.055

C 4.48 4.82 0.176 0.190
c1 0.35 0.65 0.020 0.026
c2 2.10 2.70 0.083 0.106

e 2.29 2.79 0.090 0.110

F 5.85 6.85 0.230 0.270

I 3.55 4.00 0.140 0.157

L 2.54 3.00 0.100 0.118

l2 1.45 1.75 0.057 0.069
l3 0.80 1.20 0.031 0.047

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use. No
license is grantedby implication or otherwise under any patentor patent rights of SGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto change without notice. This publicationsupersedes and replaces all informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized for use as criticalcomponents in lifesupport devices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.

 1997 SGS-THOMSON Microelectronics -Printed in Italy - All rights reserved.

SGS-THOMSON MicroelectronicsGROUP OF COMPANIES

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The Netherlands - Singapore- Spain -Sweden - Switzerland - Taiwan - Thailand - United Kingdom -U.S.A.

14/14

