Datasheet RB751V-40S2 Datasheet (CYStech) [ru]

Page 1
Spec. No. : C345S2
CYStech Electronics Corp.
Issued Date : 2004.04.27 Revised Date : 2013.04.15 Page No. : 1/6
RB751V-40S2
Description
Planar silicon Schottky barrier diode encapsulated in a SOD-323 plastic SMD package.
Features
Small surface mounting type SC-76/SOD323
Low reverse current and low forward voltage
High reliability
Pb-free lead plating and halogen-free package
Applications
Low current rectification and high speed switching
Symbol Outline
RB751V-40S2
2 (Anode)
SOD-323
Ordering Information
Device Package Shipping
RB751V-40S2-0-T1-G
SOD-323 (Pb-free lead plating
and halogen-free package)
3000 pcs / Tape & Reel 5E
Marking
RB751V-40S2 CYStek Product Specification
Page 2
Spec. No. : C345S2
CYStech Electronics Corp.
Issued Date : 2004.04.27 Revised Date : 2013.04.15 Page No. : 2/6
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature Tstg..................................................................................................... -40~+125°C
Junction Temperature Tj .............................................................................................................. +125°C
Maximum Voltages and Currents (Ta=25°C)
Peak Reverse Voltage VRM…………………………………………………………………………. 40 V
DC Reverse Voltage VR ...................................................................................................................... 30 V
Mean Rectifying Current IO ........................................................................................................... 30 mA
Peak Forward Surge Current IFSM………………………………….. ……………………………………….200 mA
Characteristics
Characteristic Symbol Condition Min. Typ Max. Unit
Forward Voltage VF IF=1mA -
Reverse Leakage Current IR VR=30V -
Capacitance Between Terminals CT VR=1V, f=1MHz -
(Ta=25°C)
2
-
-
370 mV
0.5 μA
- pF
RB751V-40S2 CYStek Product Specification
Page 3
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : 2013.04.15 Page No. : 3/6
Forward Current Derating Curve
120
100
Mounting on glass epoxy PCBs
80
60
40
20
Percentage of Rated Forward Current---(%)
0
0 25 50 75 100 125 150
Ambient Temperature---T
A
(℃)
100
10
(mA)
F
1
0.1
Forward Current---I
0.01 0 0.10.20.30.40
Reverse Leakage Current vs Revers e Voltage
(pF)
T
10
100
Ta=
10
125℃
Forward Current vs Forward Voltage
Typ. pulse measurement
125℃
Forward Voltage---VF(V)
Capacitance vs Reverse Voltage
75℃
25℃
- 25℃
f=1MHz Ta=25℃
.5
Ta=
1
0.1
Ta=
25℃
0.01
Reverse Leakage Current---IR(μA)
0.001 0102030
Reverse Voltage---VR(V)
75℃
Ta=-25℃
Typ. pulse e asurement
Capacitance between terminals---C
1
0246810121
Reverse Voltage---V
4
(V)
R
RB751V-40S2 CYStek Product Specification
Page 4
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : 2013.04.15 Page No. : 4/6
Carrier Tape Dimension
RB751V-40S2 CYStek Product Specification
Page 5
CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time
Pb-free devices

Recommended temperature profile for IR reflow

260 +0/-5 °C
Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : 2013.04.15 Page No. : 5/6
5 +1/-1 seconds
Profile feature Sn-Pb eutectic Assembly
Average ramp-up rate
(Tsmax to Tp)
Preheat
Temperature Min(T
Temperature Max(T
S min)
S max)
Time(ts min to ts max) Time maintained above:
Temperature (TL)
Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
3°C/second max. 3°C/second max.
100°C 150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5 °C 260 +0/-5 °C
10-30 seconds 20-40 seconds
6°C/second max. 6°C/second max.
6 minutes max. 8 minutes max.
Pb-free Assembly
150°C 200°C
60-180 seconds
217°C
60-150 seconds
RB751V-40S2 CYStek Product Specification
Page 6
SOD-323 Dimension
K A
CYStech Electronics Corp.
Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : 2013.04.15 Page No. : 6/6
Marking:
5 H
5E
2
B
J
Millimeters Inches Millimeters
DIM
C
E
Min. Max. Min. Max.
Style: Pin 1.Cathode 2.Anode
2-Lead SOD-323 Plastic Surface
Mounted Package,
CYStek Package Code: S2
*: Typical
D
DIM
1
H
Inches
Min. Max. Min. Max. A 0.0630 0.0709 1.60 1.80 E 0.0060 REF 0.15 REF B 0.0453 0.0531 1.15 1.35 H 0.0000 0.0040 0.00 0.10 C 0.0315 0.0394 0.80 1.00 J 0.0035 0.0070 0.089 0.177 D 0.0098 0.0157 0.25 0.40 K 0.0906 0.1063 2.30 2.70
Notes: 1.Controlling dimension : millimeters.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
2.Lead thickness specified per L/F drawing with solder plating.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
RB751V-40S2 CYStek Product Specification
Page 7
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