Page 1
查询RB225T-60供应商
Diodes
Schottky barrier diode
RB225T-60
zApplications zExternal dimensions (Unit : mm) zStructure
Switching power supply
zFeatures
1)
Cathode common type.
10.0±0.3
0.1
(TO-220)
2) Low I
R
3) High reliability
zConstruction
Silicon epitaxial planar
①
1.2
1.3
0.8
(1) (2) (3)
12.0±0.2
5.0±0.2 8.0±0.2
13.5MIN
ROHM : ＴO220FN
Manu facture Date
①
zAbsolute maximum ratings (Ta=25°C)
Reverse voltage (repetitive peak) 60
R 60
everse voltage (DC)
Average rectified forward current（*1
Forward current surge peak （60Hz・1cyc）（*1
Junction temperature 150
Storage temperature -40 to +150
(*1)Tc=100℃max Per chip : Io/2
Parameter Limits
）
Symbol Unit
V
RM
V
R
Io A
）
I
FSM
Tj
Tstg
zElectrical characteristic (Ta=25°C)
Forward characteristics
Reverse characteristics
Symbol Min. Typ. Max. Unit
V
F
I
R
- - 0.63 V
- - 600 µA
Thermal impedance θjc - - 1.75
0.2
15.0±0.4
8.0
0.7±0.1
0.05
4.5±0.3
0.1
2.8±0.2
0.1
2.6±0.5
30
100
=15A
I
F
V
R
℃
/W junction to case
RB225T-60
V
V
A
℃
℃
ConditionsParameter
=60V
Rev.A 1/3
Page 2
RB225T-60
Diodes
zElectrical characteristic curves
PEAK SURGE
FORWARD CURRENT:IFSM(A)
EPEAK SURG
Rev.A 2/3
100
Ta=150℃
10
Ta=125℃
1
0.1
FORWARD CURRENT:IF(A)
0.01
0 100 200 300 400 500 600 700
FORWARD VOL TAGE：VF(mV)
VF-IF CHARACTERISTICS
600
590
580
570
560
FORWARD VOL TAGE:VF(mV)
550
300
250
200
150
100
50
0
1000
100
FORWARD CURRENT:IFSM(A)
10
1 10 100
AVE:580.0mV
VF DISPERSION M AP
AVE:176.0A
IFSM DISRESION MAP
TIME:t(ms)
IFSM-t CHARACTERISTICS
Ifsm
Ta=75℃
Ifsm
Ta=-25℃
Ta=25℃
Ta=25℃
IF=15A
n=30pcs
8.3ms
t
1cyc
1000000
100000
10000
1000
100
10
REVERSE CURRENT:IR(uA)
1
0.1
0 102030405060
500
450
400
350
300
250
200
150
100
REVERSE CURRENT:IR(uA)
50
0
30
25
20
15
10
5
RESERVE RECOVERY TIME:trr(ns)
0
100
IM=100mA IF=10A
10
TRANSIENT
1
THAERMAL IMPEDANCE:Rth (℃/W)
0.1
0.001 0.1 10 1000
Ta=150℃
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTI CS
AVE:70.1nA
IR DISPERSION M AP
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
AVE:23.3pF
trr DISP ERSION MAP
time
1ms
300us
TIME:t(s)
Rth-t CHARACTERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=25℃
VR=60V
n=30pcs
Rth(j-a)
Rth(j-c)
10000
1000
100
TERMINALS:Ct(pF)
10
CAPACITANCE BETWEEN
1
0102030
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
2200
2150
2100
2050
2000
TERMINALS:Ct(pF)
CAPACITANC E BETWEEN
1950
1900
1000
100
PEAK SURGE
10
FORWARD CURRENT:IFSM(A)
1
1 10 100
50
40
30
20
FORWARD POWER
DISSIPATION:Pf(W)
10
0
0 1020304050
AVE:2030.9pF
Ct DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERI STICS
D=1/2
Sin(θ＝180)
AVERAGE RECTIFIED
FORWAR D CURREN T：Io( A)
Io-Pf CHARACTERISTI CS
Ifsm
8.3ms
f=1MHz
Ta=25℃
f=1MHz
VR=0V
n=10pcs
1cyc
DC
8.3ms
Page 3
Diodes
30
25
R
20
(W)
R
OWE
15
RSE P
10
REVE
DISSIPATION:P
5
0
0 102030405060
Sin(θ＝180)
D=1/2
DC
REVERSE VOLTAGE:VR(V)
VR-P
CHARACTERISTICS
R
80
70
60
50
D=1/2
40
30
AVERAGE RECTIFIED
20
FORWARD CURRENT:Io(A)
Sin(θ＝180)
10
0
0 255075100125150
AMBIENT TEMPERATURE:Ta(℃)
0A
0V
t
DC
Derating Curveﾞ(Io-Ta)
T Tj=150℃
D=t/T
VR=30V
RB225T-60
80
Io
VR
70
60
DC
50
40
D=1/2
30
Sin(θ＝
20
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
10
0
0 25 50 75 100 125 150
CASE TEMPARATURE:Tc(℃)
0A
0V
180)
Derating Curveﾞ(Io-Tc)
t
T
D=t/T
VR=30V
Tj=150℃
Io
VR
ELECTROSTATIC
30
25
20
15
10
5
DISCHARGE TEST ESD(KV)
0
AVE:18.5kV
C=200pF
R=0Ω
ESD DISPERSION MAP
No break at 30kV
C=100pF
R=1.5kΩ
Rev.A 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Page 5
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