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< Silicon RF Power Modules >
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 144- to 148-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• P
>80W, T>50% @f=144-148MHz,
out
P
>60W, T>50% @ f=136-174MHz,
out
VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 136-174MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
BLOCK DIAGRAM
2
1
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (FIN)
out
)
PACKAGE CODE: H2M
3
4
5
RoHS COMPLIANCE
• RA80H1415M1-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G201” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However ,it is applicable to the following exceptions of RoHS
Directions.
Electrical and electronic components containing lead in a glass or ceramic
other than dielectric ceramic in capacitors, e.g. piezoelectronic devices,
or in a glass or ceramic matrix compound.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
Antistatic tray,
RA80H1415M1-201
10 modules/tray
Publication Date :Jun.2013
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< Silicon RF Power Modules >
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
=+25°C, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
V
P
Drain Voltage VGG<5V 17 V
DD
Gate Voltage VDD<12.5V, Pin=0mW 5.5 V
GG
Input Power 100 mW
in
f=136-174MHz,
P
T
case(OP)
T
Output Power 90 W
out
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
ZG=ZL=50
-30 to +100 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 136 - 174 MHz
80 @144-148MHz
P
Output Power
out
60 @136-174MHz
W
VDD=12.5V
Total Efficiency 50 - - %
2f
3f
T
2ndHarmonic - - -35 dBc
o
3rdHarmonic - - -40 dBc
o
VGG=5V
Pin=50mW
Input VSWR - - 3:1 —
in
I
GG
Gate Current
VDD=10.0-15.2V, Pin=25-70mW, Load VSWR=3:1
— Stability
P
<80W (VGGcontrol @144-148MHz),
out
P
<60W (VGGcontrol @136-174MHz)
out
VDD=15.2V, Pin=50mW, Load VSWR=20:1
— Load VSWR Tolerance
P
<80W (VGGcontrol @144-148MHz),
out
P
<60W (VGGcontrol @136-174MHz)
out
All parameters, conditions, ratings, and limits are subject to change without notice.
- 1 - mA
No parasitic oscillation
—
More than –60dBc
No degradation or
—
destroy
Publication Date :Jun.2013
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< Silicon RF Power Modules >
out
t
V
V
V
V
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUT POWER and TOTAL EFFICIENCY,
versus FREQUENCY
100
90
80
70
60
50
40
30
Output Power Pout(W)
20
10
0
125 130 135 140 145 150 155 160 165 170 175 180 185
P
Frequency f(MHz)
INPUT VSWR versus FREQUENCY
=+25°C, ZG=ZL=50, unless otherwise specified)
case
2nd, 3rd HARMONICS versus FREQUENCY
η
=12.5V
DD
=5V
GG
Pin=50mW
100
90
80
70
60
50
40
30
20
10
0
Total Efficiency ηt(%)
-20
-25
-30
-35
-40
-45
Harmonics(dBc)
-50
-55
-60
-65
125 130 135 140 145 150 155 160 165 170 175 180 185
rd
3
Frequency f(MHz)
VDD=12.5V
VGG=5V
Pin=50mW
nd
2
7
=12.5V
6
5
4
ρ
3
Input VSWR ρin(-)
2
1
125 130 135 140 145 150 155 160 165 170 175 180 185
in
Frequency f(MHz)
DD
=5V
GG
Pin=50mW
Publication Date :Jun.2013
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< Silicon RF Power Modules >
V
V
V
V
V
V
V
V
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUTPOWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
45
40
35
(dBm)
(dB)
p
out
30
25
20
15
Power Gain G
Output Power P
10
G
p
I
DD
5
0
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
OUTPUTPOWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
f=136MHz
=12.5V
DD
=5V
GG
20
18
P
out
16
14
(A)
DD
12
10
8
6
Drain Current I
4
2
0
50
45
40
35
(dBm)
(dB)
p
out
30
25
20
15
Power Gain G
Output Power P
10
5
0
-10 -5 0 5 10 15 20
G
p
I
DD
Input Power Pin(dBm)
P
f=144MHz
=12.5V
DD
=5V
GG
out
20
18
16
14
12
10
8
6
4
2
0
(A)
DD
Drain Current I
OUTPUTPOWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
45
G
p
40
35
(dBm)
(dB)
p
out
30
25
20
15
Power Gain G
Output Power P
10
5
0
I
DD
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
f=148MHz
DD
GG
P
=12.5V
=5V
out
20
18
16
14
12
10
8
6
4
2
0
OUTPUTPOWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
45
G
p
40
(A)
DD
35
(dBm)
(dB)
p
out
30
25
20
15
Drain Current I
Power Gain G
Output Power P
10
I
DD
5
f=174MHz
=12.5V
DD
=5V
GG
0
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
20
18
P
out
16
14
(A)
DD
12
10
8
6
Drain Current I
4
2
0
Publication Date :Jun.2013
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< Silicon RF Power Modules >
V
V
V
V
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
90
f=136MHz
=5V
80
70
(W)
out
60
GG
Pin=50mW
50
40
30
Output Power P
20
10
0
2 4 6 8 10 12 14
Drain Voltage VDD(V)
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
=+25°C, ZG=ZL=50, unless otherwise specified)
case
OUTPUTPOWER and DRAIN CURRENT
20
P
out
18
16
14
(A)
DD
12
I
DD
10
8
6
Drain Current I
4
2
0
100
90
f=144MHz
80
Pin=50mW
70
(W)
out
60
50
40
30
Output Power P
20
10
0
2 4 6 8 10 12 14
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
=5V
GG
Drain Voltage VDD(V)
versus DRAIN VOLTAGE
20
P
out
18
16
14
(A)
DD
12
I
DD
10
8
6
Drain Current I
4
2
0
100
90
f=148MHz
=5V
80
70
(W)
out
60
GG
Pin=50mW
50
40
30
Output Power P
20
10
0
2 4 6 8 10 12 14
Drain Voltage VDD(V)
20
P
out
18
16
14
(A)
DD
12
I
DD
10
8
6
Drain Current I
4
2
0
100
f=174MHz
90
80
70
(W)
out
60
50
=5V
GG
Pin=50mW
P
out
I
40
30
Output Power P
20
10
0
DD
20
18
16
14
12
10
8
6
4
2
0
(A)
DD
Drain Current I
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Publication Date :Jun.2013
5
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< Silicon RF Power Modules >
V
V
V
V
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T
OUTPUTPOWER and DRAIN CURRENT
versus GATE VOLTAGE
100
90
f=136MHz
=12.5V
80
70
(W)
out
60
50
40
30
Output Power P
20
10
DD
Pin=50mW
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
=+25°C, ZG=ZL=50, unless otherwise specified)
case
OUTPUTPOWER and DRAIN CURRENT
20
P
out
18
16
14
(A)
DD
12
DD
10
8
6
Drain Current I
I
4
2
0
100
f=144MHz
90
80
Pin=50mW
70
(W)
out
60
50
40
30
Output Power P
20
10
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
versus GATE VOLTAGE
=12.5V
DD
Gate Voltage VGG(V)
20
P
out
18
16
14
(A)
DD
12
10
8
I
DD
6
Drain Current I
4
2
0
OUTPUTPOWER and DRAIN CURRENT
versus GATE VOLTAGE
100
P
f=148MHz
90
80
70
(W)
out
60
=12.5V
DD
Pin=50mW
50
40
30
Output Power P
20
10
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
out
OUTPUTPOWER and DRAIN CURRENT
versus GATE VOLTAGE
20
18
16
14
(A)
DD
12
10
I
DD
8
6
Drain Current I
4
2
0
100
f=174MHz
90
=12.5V
DD
80
Pin=50mW
70
(W)
out
60
50
40
30
Output Power P
20
10
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
P
out
Gate Voltage VGG(V)
20
18
16
14
(A)
DD
12
I
DD
10
8
6
Drain Current I
4
2
0
Publication Date :Jun.2013
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< Silicon RF Power Modules >
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
OUTLINE
67±1
60±1
2-R2±0.5
49.8±1
(3.26)
19.4±115±1
10.7±1
12.5±1
17±1
/-0.4
3.1+0.6
②①
44±1
56±1
③ ④
0.6±0.2
）
（2.6
18±1
4±0.5
.5
7.3±0
）
（9.9
Publication Date :Jun.2013
1 RF Input (Pin)
2 Gate Voltage(VGG)
3 Drain Voltage (VDD)
4 RF Output (P
out
)
5 RF Ground (Case)
7
Page 8
< Silicon RF Power Modules >
DUT
V
Attenuator
Analyzer
Attenuator
Attenuator
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
TEST BLOCK DIAGRAM
Signal
Generator
C1, C2: 4700pF, 22uF in parallel
Pre-
amplifier
Power
Meter
Directional
Coupler
Z
G
=50
1
Ω
C1
- +
DC Power
Supply
5
2
C2
GG
4
3
+ DC Power
Supply V
L
Z
Ω
=50
DD
Spectrum
Directional
Coupler
Power
Meter
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (P
out
)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
1
2
3
4
5
Publication Date :Jun.2013
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< Silicon RF Power Modules >
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is
attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto
metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors,
and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and
RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At P
=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
out
P
Stage
in
(W)
st
1
nd
2
0.05 6.0 2.57 1.02
6.0 80.0 0.45 12.2
The channel temperatures of each stage transistor Tch= T
T
= T
ch1
T
= T
ch2
+ (12.5V x 1.02A – 6.0W + 0.05W) x 2.57°C/W = T
case
+ (12.5V x 11.18A – 60.0W + 6.0W) x 0.45°C/W= T
case
For long-term reliability, it is best to keep the module case temperature (T
temperature T
=60°C and P
air
P
out
(W)
R
th(ch-case)
(°C/W)
=60W, the required thermal resistance R
out
I
@ T=40%
DD
(A)
+ (VDDx IDD- P
case
V
DD
(V)
12.5
+ 17.5 °C
case
+ 38.6 °C
case
+ Pin) x R
out
) below 90°C. For an ambient
case
th (case-air)
= ( T
th(ch-case)
case
- T
are:
) / ( (P
air
/ T) - P
out
out
Pin) of the heat sink, including the contact resistance, is:
R
th(case-air)
= (90°C - 60°C) / (80W/50% - 80W + 0.05W) = 0.38 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is:
T
= T
= T
+ 47.5 °C
air
+ 68.6 °C
air
ch1
T
ch2
+
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Publication Date :Jun.2013
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< Silicon RF Power Modules >
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(VGG). When the gate voltage is close to zero, the nominal output signal (P
up to 60 dB and only a small leakage current flows from the battery into the drain.
Around VGG=0V(minimum), the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a
4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility
to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not
leakage the unnecessary electric wave and use this products without cause damage for human and property per normal
operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric
wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding
operation of these products from the formal specification sheet. For copies of the formal specification sheets,
please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for
consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for
critical communications elements. In the application, which is base station applications and fixed station applications
that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider
the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability
report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor.
3.RA series products and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
therefore appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to
utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case
temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under
extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50. Under the condition of operating into
a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is
risk for burn out of the transistors and burning of other parts including the substrate in the module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch
condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is
recommended that verification of no parasitic oscillation be performed at the completed equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary
items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way
from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this
data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
=60W) is attenuated
out
Publication Date :Jun.2013
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< Silicon RF Power Modules >
RA80H1415M1
RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no
responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date :Jun.2013
11
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