Datasheet R7639 Datasheet (HAMAMATSU)

PHOTOMULTIPLIER TUBE

PRELIMINARY DATA

R7639

JUN. 2000

Quantum Efficiency: 40 % at 155 nm

High Sensitivity Solar Blind Photocathode (115 nm to 230 nm)

28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type

FEATURES

Spectral Response .....................115 nm to 230 nm

Cathode Sensitivity

Radiant at 155 nm ......................... 50 mA/W Typ.

Quantum Efficiency at 155 nm.....................40 %

Anode Sensitivity (at 1000 V)

Radiant at 155 nm ...................1.5 × 105 A/W Typ.

APPLICATIONS

Emission Spectroscopy
VUV Spectrophotometer

TPMSF0083

GENERAL

Parameter

Spectral Response 115 to 230 nm
Wavelength of Maximum Response 155 nm
Photocathode

Material Diamond —

Minimum Effective Area 3 × 12 mm
Window Material MgF2 —
Dynode

Secondary Emitting Surface Sb-Cs —

Structure Circular-cage —

Number of Stages 9 —
Direct Interelectrode Capacitances

Anode to Last Dynode 4 pF

Anode to All Other Electrodes 6 pF
Base 11-pin base

Weight 45 g
Suitable Socket E678-11A(option) —

Description/Value

JEDEC No.B11-88

Unit

Figure 1: Typical Spectral Response

TPMSB0172EB

100

CATHODE RADIANT
SENSITIVITY

10

QUANTUM
EFFICIENCY

1

QUANTUM EFFICIENCY (%)

CATHODE RADIANT SENSITIVITY (mA/W)

0.1
100 200 220 240120 140 160 180 260 280 300

WAVELENGTH (nm)

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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are

subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K

PHOTOMULTIPLIER TUBE R7639

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter

Supply Voltage

Between Anode and Cathode V dc
Between Anode and Last Dynode
Between Successive Dynodes V dc

Between First Dynode and Cathode
Average Anode Current mA
Ambient Temperature °C

CHARACTERISTICS (at 25°C)

Parameter

Cathode sensitivity

Quantum Efficiency at 121.6 nm

at 155 nm

Radiant at 121.6 nm

at 155 nm

Anode Sensitivity

Radiant at 155 nm
Gain
Anode Dark Current
ENI (Equivalent Noise Input)
Time Response

Anode Pulse Rise Time

Electron Transit Time

Transit Time Spread (TTS)

(After 30 minutes storage in the darkness)

Rating

1250

250
250
250

0.1

-30 to +50

Unit

V dc

V dc

Min. Unit

10
—
10
—

Typ.

26
40
26
50

1.0 × 1041.5 × 10
—

3.0 × 10

—
—

—
—
—

0.5 5

1.46 × 10

2.2
22

1.2

Max.

—
—
—
—

5

—

6

—

—

-16

—
—
—

%

%
mA/W
mA/W

A/W

—

nA

W

ns
ns
ns

Anode Current Stability

Light Hysteresis
Voltage Hysteresis

NOTES

: Averaged over any interval of 30 seconds maximum.
: Measured with the same light source as Note B and with the voltage

distribution ratio shown in Table 1 below.

Table 1: Voltage Distribution Ratio

Electrode
Distribution

Ratio
Supply Voltage=1000 V dc
K: Cathode Dy: Dynode P: Anode

: Measured with the same supply voltage and voltage distribution ratio

as Note E after removal of light.

: ENI is an indication of the photon-limited signal-to-noise ratio. It re-

fers to the amount of light in watts to produce a signal-to-noise ratio
of unity in the output of a photomultiplier tube.

ENI =

where q = Electronic charge (1.60 × 10

: The rise time is the time for the output pulse to rise from 10 % to 90 %

of the peak amplitude when the entire photocathode is illuminated by
a delta function light pulse.

K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P

1111111111

2q·ldb·G·∆f

S

ldb = Anode dark current(after 30 minutes storage) in am-

peres.

G = Gain.

∆f = Bandwidth of the system in hertz. 1 hertz is used.

S = Anode radiant sensitivity in amperes per watt at the

wavelength of peak response.

-19

coulomb).

—
—

0.1

1.0

—
—

%
%

: The electron transit time is the interval between the arrival of delta

function light pulse at the entrance window of the tube and the time
when the anode output reaches the peak amplitude. In measure­ment, the whole photocathode is illuminated.

: Also called transit time jitter. This is the fluctuation in electron transit

time between individual pulses in the signal photoelectron mode, and
may be defined as the FWHM of the frequency distribution of elec­tron transit times.

: Hysteresis is temporary instability in anode current after light and

voltage are applied.

l

max.

l

min.

TIME

TPMSB0002EA

ANODE

CURRENT

Hysteresis =

0

l

max — lmin.

l

i

5 6 7 (minutes)

l

i

× 100 (%)

(1) Light Hysteresis
The tube is operated at 750 volts with an anode current of 1 micro-am­pere for 5 minutes. The light is then removed from the tube for a minute.
The tube is then re-illuminated by the previous light level for a minute to
measure the variation.

(2) Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro­ampere for 5 minutes. The light is then removed from the tube and the
supply voltage is quickly increased to 800 volts. After a minute, the sup­ply voltage is then reduced to the previous value and the tube is re­illuminated for a minute to measure the variation.

Figure 2:Typical Gain and Anode Radiant Sensitivity

TPMSB0173EB

8

10

7

10

TYPICAL GAIN

8

10

7

10

Figure 3:Typical Time Response

TPMSB0004EB

100

80
60

40

TRANSIT TIME

6

10

5

10

4

10

3

10

ANODE RADIANT SENSITIVITY (A/IW) at 155mm

2

10

500 700 1000

TYPICAL ANODE
SENSITIVITY

MINIMUM ANODE
SENSITIVITY

1500

6

10

5

10

GAIN

4

10

3

10

2

10

SUPPLY VOLTAGE (V)

Figure 4:Dimensional Outline and Basing Diagram (Unit: mm)

20 MAX.

3 MIN.

49.0 ± 2.5

80 MAX.

94 MAX.

DY6

DY5

6

5

DY4

4

3

DY3

2

DY2

1

DY1

DIRECTION OF LIGHT

DY7

7

DY8

8

9

DY9

10

P

11

K

FACE PLATE

MgF2 WINDOW

PHOTO­CATHODE

20 MAX.

28.5 ± 1.5

12 MIN.

20

10

8

TIME (ns)

6

4

RISE TIME

2

1

300

500 700

1000 1500

SUPPLY VOLTAGE (V)

Figure 5:Socket E678-11A (Option) (Unit: mm)

49
38

33

3.5

5

29

418

TACCA0064EA

32.2 ± 0.5

11 PIN BASE
JEDEC No. B11-88

TPMSA0040EA

NOTE: There is a 2 mm diameter hole to exhaust inner air on the plastic base.

PHOTOMULTIPLIER TUBE R7639

Warning—Personal Safety Hazards

Electrical Shock—Operating voltages applies to this

device present a shock hazard.

HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone] E-mail: [e-mail]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone] E-mail: [e-mail]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone] E-mail: [e-mail]

United Kingdom:

North Europe:
Italy:

Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone] E-mail: [e-mail]

Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: [phone], Fax: [phone] E-mail: [e-mail]

Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone] E-mail: [e-mail]

HOMEPAGE URL http://www.hamamatsu.com

TPMS1058E03
JUN. 2000 IP
Printed in Japan (1,000)