Datasheet R6925 Datasheet (HAMAMATSU)

High Sensitivity Bialkali Photocathode

28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type

FEATURES

Spectral Response ............................ 185 to 730 nm

Cathode Sensitivity

Luminous........................................70 µA/lm Typ.

Radiant at 410 nm .......................... 68mA/W Typ.

Anode Sensitivity (at 1000V)

Luminous.........................................500A/lm Typ.

Radiant at 410 nm ................... 4.8 × 105A/W Typ.

APPLICATIONS

Fluorescence Spectrophotometers
Emission Spectrophotometers
Atomic Absorption Spectrophotometers

PHOTOMULTIPLIER TUBE
R6925

TPMSF0073

GENERAL

Parameter

Spectral Response 185 to 730 nm
Wavelength of Maximum Response 410 nm
Photocathode

Material Bialkali —

Minimum Effective Area 8 × 24 mm
Window Material UV glass
Dynode

Secondary Emitting Surface Bialkali —

Structure Circular-cage —

Number of Stages 9 —
Direct Interelectrode Capacitances

Anode to Last Dynode 4 pF

Anode to All Other Electrodes 6 pF
Base 11-pin base

Weight 45 g
Suitable Socket E678-11A(option) —
Suitable Socket Assembly E717-21(option) —

Description/Value

JEDEC No.B11-88

Unit

Figure 1: Typical Spectral Response

TPMSB0123EA

100

10

QUANTUM EFFICIENCY

1

CATHODE RADIANT
SENSITIVITY

QUANTUM EFFICIENCY (%)

0.1

CATHODE RADIANT SENSITIVITY (mA/W)

0.01
100 300200 400 500 600 700 800

WAVELENGTH (nm)

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©1997 Hamamatsu Photonics K.K

PHOTOMULTIPLIER TUBE R6925

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter

Rating

Supply Voltage

Between Anode and Cathode Vdc
Between Anode and Last Dynode Vdc

Average Anode Current

A

1250

250

0.1

CHARACTERISTICS (at 25°C)

Parameter

Cathode sensitivity

Quantum Efficiency at Peak Wavelength

Luminous
Radiant at 410nm
Red/White Ratio
Blue

Anode Sensitivity

Luminous
Radiant at 410nm

Gain
Anode Dark Current

ENI (Equivalent Noise Input)
Time Response

Anode Pulse Rise Time
Electron Transit Time
Transit Time Spread (TTS)

Anode Current Stability

Light Hysteresis
Voltage Hysteresis

B

D

C

E

F

(After 30 minutes storage in the darkness)

G

E

H

I

J

K

Unit

mA

Min.

—

40
—
—
—

200

—

—
—
—

—
—
—

—
—

Max.Typ.

23

(at 250nm)

70
68

0.02
7

500

5

4.8 × 10

6

7.1 × 10
550

-16

2.2 × 10

2.2
22

1.2

0.1

1.0

Unit

—

—
—
—
—

—
—

—

%

µ A/lm
mA/W

—

µ A/lm-blue

A/lm
A/W

—

nA

—

—
—
—

—
—

W

ns
ns
ns

%
%

NOTES

A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a distribution

temperature of 2856K. Supply voltage is 100 volts between the cath­ode and all other electrodes connected together as anode.

C: Red/White ratio is the quotient of the cathode current measured us-

ing a red filter(Toshiba R-68) interposed between the light source
and the tube by the cathode current measured with the filter removed
under the same conditions as Note B.

D: The value is cathode output current when a blue filter(Corning CS-5-

58 polished to 1/2 stock thickness) is interposed between the light
source and the tube under the same condition as Note B.

E: Measured with the same light source as Note B and with the voltage

distribution ratio shown in Table 1 below.

Table 1: Voltage Distribution Ratio

Electrode
Distribution

Ratio
Supply Voltage=1000Vdc
K:Cathode Dy:Dynode P:Anode

K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P

1111111111

F: Measured with the same supply voltage and voltage distribution ratio

as Note E after removal of light.

G: ENI is an indication of the photon-limited signal-to-noise ratio. It re-

fers to the amount of light in watts to produce a signal-to-noise ratio
of unity in the output of a photomultiplier tube.

ENI =

where q = Electronic charge (1.60 × 10

2q·ldb·G·∆f

S

-19

coulomb).

ldb = Anode dark current(after 30 minutes storage) in am-

peres.

G = Gain.

∆f = Bandwidth of the system in hertz. 1 hertz is used.

S = Anode radiant sensitivity in amperes per watt at the

wavelength of peak response.

H: The rise time is the time for the output pulse to rise from 10% to 90%

of the peak amplitude when the entire photocathode is illuminated by
a delta function light pulse.

)

I: The electron transit time is the interval between the arrival of delta

function light pulse at the entrance window of the tube and the time
when the anode output reaches the peak amplitude. In measure­ment, the whole photocathode is illuminated.

J: Also called transit time jitter. This is the fluctuation in electron transit

time between individual pulses in the signal photoelectron mode, and
may be defined as the FWHM of the frequency distribution of elec­tron transit times.

K: Hysteresis is temporary instability in anode current after light and

voltage are applied.

l

max.

l

min.

TIME

TPMSB0002EA

ANODE

CURRENT

l

i

0

5 6 7 (minutes)

l

Hysteresis =

max — lmin.

l

i

× 100(%)

(1) Light Hysteresis
The tube is operated at 750 volts with an anode current of 1 micro-am­pere for 5 minutes. The light is then removed from the tube for a minute.
The tube is then re-illuminated by the previous light level for a minute to
measure the variation.

(2) Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro­ampere for 5 minutes. The light is then removed from the tube and the
supply voltage is quickly increased to 800 volts. After a minute, the sup­ply voltage is then reduced to the previous value and the tube is re­illuminated for a minute to measure the variation.

Figure 2:Typical Gain and Anode Luminous Sensitivity

TPMSB0124EB

5

10

TYPICAL GAIN

4

10

3

10

TYPICAL ANODE

2

10

1

10

0

10

ANODE LUMINOUS SENSITIVITY (A/Im)

-1

10

500 700 1000

SENSITIVITY

MINIMUM ANODE
SENSITIVITY

SUPPLY VOLTAGE (V)

1500

2000

8

10

7

10

6

10

5

10

GAIN

4

10

3

10

2

10

Figure 3:Typical Time Response

TPMSB0004EB

100

80
60

40

20

10

8

TIME (ns)

6

4

2

1

300

500 700

SUPPLY VOLTAGE (V)

Figure 4: Typical ENI with Wavelength Figure 5:Typical EADCI

vs. Supply Voltage

-13

10

TPMSB0126EATPMSB0125EA

-9

10

TRANSIT TIME

RISE TIME

1000 1500

(Equivalent Anode Dark Current Input)

-14

10

-15

10

ENI (W)

-16

10

-17

10

100 300200 400 500 600 700 800

WAVELENGTH (nm)

-10

10

-11

10

EADCI (lm)

-12

10

-13

10

300

400 500 600 800

SUPPLY VOLTAGE (V

1000 1500

PHOTOMULTIPLIER TUBE R6925

Figure 6: Dimensional Outline and Basing Diagram

Unit: mm

Figure 7: Socket E678-11A (Option)

28.5 ± 1.5

T9 BULB

PHOTOCATHODE

24MIN.

11 PIN BASE
JEDEC No.B11-88

8MIN.

49.0 ± 0.25

32.2 ± 0.5

80MAX.

94MAX.

DY5

5

DY4

4

3

DY3

2

DY2

DY1

DIRECTION

OF LIGHT

Bottom View

(Basing Diagram)

DY6

6

1

Figure 8: D Type Socket Assembly E717-21 (Option)

PMT

P

DY9

DY8

DY7

DY6

DY5

DY4

DY3

DY2

DY1

K

33.0 ± 0.3

5

3.5

38.0 ± 0.3

49.0 ± 0.3

29

4

L

450 ± 10

31.0 ± 0.5
HOUSING

(INSULATOR)

POTTING
COMPOUND

Type No.

E717-21
E717-63

L
41 ± 0.5
30 ± 0.5

11

7

10

K

DY7

DY8

8
9

DY9

P

TPMSA0005EB

SOCKET

PIN No.

10

9

8

7

6

5

4

3

2

1

11

R10

R9

R8

R7

R6

R5

R4

R3

R2

R1

SIGNAL GND
SIGNAL OUTPUT

RG-174/U (BLACK)
POWER SUPPLY GND

AWG22 (BLACK)

C3

C2

C1

R to R10

: 330kW

C1 to C3

: 0.01mF

-HV
AWG22 (VIOLET)

TACCA0002EC

49
38

29

33

3.5

5

418

TACCA0064EA

* Hamamatsu also provides compact high voltage power supplies and C956 se-

ries DP type socket assemblies which incorporate a DC to DC converter type
high voltage power supply.

Warning—Personal Safety Hazards

Electrical Shock—Operating voltages applies to this

device present a shock hazard.

HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]

United Kingdom:
North Europe:
Italy:

Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Cat. No. TPMS1034E01
JUL. 1997 T
Printed in Japan (1,500)