Datasheet r5011anx Datasheet

R5011ANX

z

Transistors

10V Drive Nch MOSFET

R501 1ANX

Structure

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

GSS)

guaranteed to be r30V.

4) Drive circuits can be simple.

5) Parallel use is easy.

Applications

Switching

Dimensions (Unit : mm)

TO-220FM

15.0

12.0

8.02.5

14.0

(1)Base (2)Collector (3)Emitter

φ3.2

10.0

1.3

1.2

0.8

2.54 2.62.54

(2)(3)(1)

4.5

2.8

0.75

Packaging specifications

z

Package Code

Type

Basic ordering unit (pieces)

R5011ANX

z

Absolute maximum ratings (Ta=25qC)

Parameter Drain-source voltage Gate-source voltage

Drain current

Source current (Body Diode)

Continuous Pulsed Continuous

Pulsed Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature

∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 500μH, V ∗3 Limited only by maximum tempterature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Bulk

−

500

∗3 ∗1 ∗3 ∗1

∗2

−55 to +150

Limits

500

±30 ±11 ±44

11 44

5.5

8.1 50

150

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

SP

I

AS

I

E

AS

P

D

Tch

Tstg °C

Inner circuit

Unit

V V A A A A A

mJ

W

°C

(1) (2) (3)

(1) Gate (2) Drain (3) Source

∗1

∗1 Body Diode

1/5

Transistors

z

Thermal resistance

Parameter

Channel to case

z

Electrical characteristics (Ta=25qC)

Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗ Pulsed

z

Body diode characteristics (Source-drain) (Ta=25qC)

Parameter Symbol

V

SD

∗ Pulsed

Symbol Limits Unit

Rth(ch-c)

Symbol

I

V

(BR)DSS

I

V

R

| Y

C C t

t

Q

GSS

DSS

GS(th)

DS(on)

fs

C

iss

oss

rss

d(on)

t

r

d(off)

f

t

g

Q

gs

gd

Min.

−

500

−

2.5

∗

−

∗

|

3.5

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

Min. Typ. Max.

∗

−−1.5 V IS= 11A, VGS=0VForward voltage

2.5

Max. Unit Conditions

Typ.

±100

−

100

−

4.5

−

0.5

0.38

−

1000

400

−

35

− ns

26

− VGS=10Vns

28

− RL=45.5Ωns

75

− RG=10Ωns

30

− VDD250V

30

− nC

7

− nC

12

Unit

°C/W

nA V

V

μA

V

Ω

S pF pF pF

nC

GS

D

=1mA, VGS=0V

I

DS

V V

DS

D

=5.5A, VGS=10V

I I

D

=5.5A, VDS=10V

V

DS

V

GS

f=1MHz I

D

=5.5A, VDD 250V

I

D

=11A

V

GS

R

L

=22.7Ω / RG=10Ω

Conditions

R5011ANX

=±30V, VDS=0V

=500V, VGS=0V =10V, ID=1mA

=25V =0V

=10V

2/5

Transistors

z

ge

Electrical characteristic curves

100

Oper ation in thi s area i s li mi ted by R

DS(ON)

10

(A)

D

1

0.1

DRAIN CURRENT : I

Ta = 25°C Sing le Pulse

0.01

0.1 1 10 100 1000

DRAIN -SOUR CE VOLTAGE : VDS ( V )

Fi g.1 M aximum Safe O perating Aera

100

VDS= 10V Pulsed

10

(A)

Ta= 125°C

D

Ta= 75°C

1

Ta= 25°C Ta= -25°C

0.1

DRAIN CURRENT : I

0.01

0.001

0.0 1.5 3.0 4.5 6. 0

GATE- SOURC E VOLTAGE : VGS (V)

Fi g.4 T ypical Transf er Char acteri stic s

PW=100us

PW=1ms

PW=100ms

DC operati on

20

Ta= 25°C Pulsed

15

(A)

D

10

5

DRAIN CURRENT: I

0

0 10203040 50

DRAIN-SOURCE VOLTAGE: VDS (V)

Fig .2: Typical Output Character istic s(㸇)

6

VDS= 10V

(V)

I

= 1mA

D

5

GS(th)

4

3

2

1

GATE TH RESHOLD VOLTAGE: V

0

-50 0 50 100 150

CHANNEL TEMPERATURE: Tch (°C)

Fi g.5 Gate T hreshol d Voltag e vs. Channel Temperatur e

10V

8.0V

6.5V

VGS= 4. 5V

6.0V7.0V

5.5V

5.0V

R5011ANX

10

Ta= 25°C Pulsed

8

(A)

D

6

6.5V

4

6.0V

DRAIN CURRENT: I

2

0

012345

DRAIN-SOURCE VOLTAGE: VDS (V)

Fi g.3: T ypic al Output C haracter ist ics(㸈)

10

VGS= 10V Pulsed

(ȍ)

1

DS(on)

0.1

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

0.01

0.1 1 10 100

DRAIN CURRENT : ID (A)

Fi g.6 St atic D rain- Sourc e On-State Resi stance vs. D rain C urr ent

7.0V

8.0V

10V

VGS= 4.5V

Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C

5.5V

5.0V

1

0.9

0.8

(ȍ)

0.7

DS(on)

0.6

0.5

0.4

ID= 5.5A

0.3

RESIST ANCE : R

0.2

0.1

STATIC DRAIN-SOURCE ON-STATE

0

0 5 10 15

GATE- SOURC E VOLTAGE : VGS (V)

Fi g.7 Stat ic D rain- Source On-State Resi stance vs. Gat e Source Vol ta

Ta= 25°C Pulsed

ID= 11. 0A

1

VGS= 10V Pulsed

0.8

) (ȍ)

DS(on

0.6

0.4

RESIST ANCE : R

0.2

STAT IC DR AIN-SOU RCE ON -STAT E

0

-50 0 50 100 150

Fi g.8 St atic D rain- Sourc e On-State R esist ance vs. Channel Temperat ure

ID= 11.0A

ID= 5.5A

CHANNEL TEMPERATURE: Tch (°C)

100

VDS= 10V Pulsed

10

1

|Yfs| (S)

0.1

FOR WARD TRANSF ER ADM ITTAN CE :

0.01

0.01 0.1 1 10 100

DRAIN CURRENT : ID (A)

Fi g.9 F orward T ransfer Admittanc e vs. Dr ain Current

Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C

3/5

Transistors

R5011ANX

100

VGS= 0V

(A)

DR

Pulsed

10

1

0.1

REVERSE DRAIN CURRENT : I

0.01 0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fi g.10 R evers e Drai n Curr ent vs. Sours e- Drain Voltag e

1000

(ns)

rr

100

Ta= 25°C di / dt = 100A / μs V

= 0V

GS

REVERSE RECOVERY TIME: t

10

0.1 1 10 100

Pulsed

REVERSE DRAIN CURRENT : IDR (A)

Fi g.13 R ever se Reco very Ti me vs.R everse D rain C urr ent

Ta= 125°C

Ta= 75°C

Ta= 25°C Ta= -25°C

10000

1000

C

rss

100

Ta= 25°C

10

CAPACITANCE : C (pF)

f= 1MH z V

= 0V

GS

1

0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : VDS (V)

Fi g.11 T ypi cal Capa citance vs. D rain-Sourc e Voltag e

10000

t

f

1000

t

d( o ff)

100

10

SWIT CHING TI ME : t (ns )

t

r

1

0.01 0. 1 1 10 100

DRAIN CURRENT : ID (A)

Fi g.14 Swi tching䇭Char acteri stics

C

iss

C

oss

Ta= 25°C V

= 250V

DD

V

= 10V

GS

R

= 10ȍ

G

Pulsed

t

d(on)

15

Ta= 25°C

(V)

V

= 250V

DD

GS

I

= 11A

D

R

= 10ȍ

10

G

Pulsed

5

GATE- SOURC E VOLTAGE : V

0

01020304050

TOTAL GATE CHARGE : Q

(nC)

g

Fi g.12 D ynamic Input Char acter isti cs

1

Ta = 25°C Sing le Pul se : 1Uni t

Rth䋨ch-a䋩䋨t䋩 = 䌲䋨t䋩×Rth䋨ch-a

0.1 Rth䋨ch-a䋩 = 45.8°C/W

䋩

0.01

RESIST ANCE : r (t)

0.001

NOR MARIZ ED TR ANSIEN T THER MAL

0.0001

0.0001 0.001 0.01 0.1 1 10 100 1000

PULSE WIDTH : Pw(s)

Fi g.15 N ormali zed Tr ansient T hermal R esis tance vs. Pul se Width

4/5

Transistors

z

Switching characteristics measurement circuit







Fig.1-1 Switching Time Measurement Circuit! Fig.1-2 Switching Waveforms 



IG(Const.)





Fig.2-1 Gate Charge Measurement Circuit! Fig.2-2 Gate Charge Waveform 



Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

R5011ANX

5/5

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0