Datasheet R3896 Datasheet (HAMAMATSU)

High Q.E Multialkali Photocathode

28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type

FEATURES

High Sensitivity

Luminous ..........................................

Radiant

at 450nm (peak) .............................

at 633nm .........................................

Quantum Efficiency

at 260nm (peak) ....................................

at 633nm (peak) ....................................

Wide Spectral Response ............................

High Signal to Noise Ratio
Newly Designed Electro Optical Structure

PHOTOMULTlPLlER TUBE

R3896

PATENT PENDING

New Electro–Optical Design

525 A/lm (Typ.)

90mA/W (Typ.)
73mA/W (Typ.)

30% (Typ.)
14% (Typ.)

185 to 900nm

APPLICATIONS

Biomedical Analysis

Blood Analyzer, Flow Cytometer, DNA Sequencer

Environmental Monitoring

NOx Analyzer

Spectroscopy

Fluorescence Spectrometer, Raman Spectrometer,
UV–VIS Spectrometer

Semiconductor Industry

Wafer Inspection, Particle Counter

Figure 1: Electro Optical Structure

LIGHT

PHOTOELECTRON
TRAJECTORIES

GRILL

GLASS BULB

ANODE

Figure 2: Typical Spectral Response

TPMSB0049EB

100

R928

10

QUANTUM EFFICIENCY

1

QUANTUM EFFICIENCY (%)

0.1

CATHODE RADIANT SENSITIVITY (mA/W)

CATHODE RADIANT

SENSITIVITY

R3896

1st DYNODE

PHOTOCATHODE

2nd DYNODE

Subject to local technical requirements and regulat ions, availability of products included in this promotional material may va r y. Please consult with our sales office.
lnformation furnished by HAMA M ATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are

subject to change without notice. No patent right are granted to any of the circuits described herein.

9th DYNODE

TPMSC0024EA

0.01
100 200 300 400 500 600 700 800 900 1000

WAVELENGTH (nm)

1994 Hamamatsu Photonics K.K.

©

PHOTOMULTlPLlER TUBE R3896

GENERAL

Parameter Description/Value Unit

Spectral Response
Wavelength of Maximum Response

Photocathode

MateriaI
Minimum Effective Area

Window Material
Dynode

Structure
Number of Stages

Direct Interelectrode Capacitances

Anode to Last Dynode
Anode to All Other Electrodes

Base
Weight

SuitabIe Socket

185 to 900 nm

450

Multialkali

8 24

UV glass

Circular-cage

9

4pF
6pF

JEDEC No. B11-88

Approx. 45

E678–11A (option)

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter Value Unit

Supply Voltage

Between Anode and Cathode
Between Anode and Last Dynode

Average Anode Current

A

Ambient Temperature

1250

250

0.1

–80 to +50

CHARACTERISTlCS (at 25 )

Parameter Typ.Min. Max. Unit

Cathode Sensitivity

Luminous
Radiant at 254nm

Quantum Efficiency at 254nm 29.3

Blue
Red/White Ratio

Anode Sensitivity

Luminous

Gain
Anode Dark Current

(after 30min. storage in the darkness)
Time Response

Anode Pulse Rise Time
Electron Transit Time

Transit Time Spread (TTS)

Anode Current Stability

Current Hysteresis
Voltage Hysteresis

B

475

525

60
450nm
633nm
852nm

450nm
633nm
852nm

C

D

E

E

F

G

H

I

J

3000 5000

90

73

5.0

24.8

14.3

0.73
15

0.4

9.5 10

2.2
22

1.2

6

5010

0.1

1.0

nm

mm

g

Vdc
Vdc

mA

A/lm
mA/W

mA/W
mA/W
mA/W

%
%
%
%

A/lm-b

A/lm

nA

ns
ns
ns

%
%

NOTES

A:

Averaged over any interval of 30 seconds
maximum.

B:

The light source is a tungsten filament lamp
operated at a distribution temperature of 2856K.
Supply voltage is 100 volts between the cathode
and all other electrodes connected together as
anode.

C:

The value is cathode output current when a blue
filter(Coming CS-5-58 polished to 1/2 stock
thickness) is interposed between the light source
and the tube under the same condition as Note B.

D:

Red/White ratio is the quotient of the cathode
current measured using a red filter(Toshiba R-68)
interposed between the light source and the tube
by the cathode current measured with the filter
removed under the same conditions as Note B.

E:

Measured with the same light source as Note B
and with the voltage distribution ratio shown in
Table 1 below.

Table 1:Voltage Distribution Ratio

Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P
Ratio

SuppIy Voltage : 1000Vdc, K : Cathode, Dy : Dynode, P : Anode

F:

Measured with the same supply voltage and
voltage distribution ratio as Note E after removal of
light.

G:

The rise time is the time for the output pulse to
rise from 10% to 90% of the peak amplitude when
the entire photocathode is illuminated by a delta
function light pulse.

H:

The electron transit time is the interval between
the arrival of delta function light pulse at the
entrance window of the tube and the time when
the anode output reaches the peak amplitube. In
measurement, the whole photocathode is
illuminated.

I:

Also called transit time jitter. This is the fluctuation
in electron transit time between individual pulses in
the signal photoelectron mode, and may be defined
as the FWHM of the frequency distribution of
electron transit times

J:

Hysteresis is temporary instability in anode current
after light and voltage are applied.

ANODE

CURRENT

(1)Current Hysteresis
The tube is operated at 750 volts with an anode
current of 1 microampere for 5 minutes. The light is
then removed from the tube for a minute. The tube is
then re-illuminated by the previous light level for a
minute to measure the variation.
(2)Voltage Hysteresis
The tube is operated at 300 volts with an anode
current of 0.1 micro-ampere for 5 minutes. The light
is then removed from the tube and the supply voltage
is quickly increased to 800 volts. After a minute, the
supply voltage is then reduced to the previous value
and the tube is re-illuminated for a minute to
measure the variation.

1111111111

l

l

max.

Hysteresis = 100(%)

l

i

5 6 7 (minutes)

0

min.

l

i

l

max.

l

min.

TIME

TPMSB0002EA

Figure 3: Typical Temperature Characteristics

of Dark Current
(at 1000V, after 30minutes storage)

TPMSB0050EA

100

Figure 4: Anode Luminous Sensitivity and

Gain Characteristics

TPMSB0051EA

6

10

GAIN (TYP.)

10

8

5

10

10

4

10

1

ANODE LUMINOUS
SENSITIVITY (TYP.)

1000

ANODE DARK CURRENT (nA)

0.1

0.01
–40 –20 0 +20 +40

TEMPERATURE (°C)

3

10

ANODE LUMINOUS

ANODE LUMINOUS SENSITIVITY (A/lm)

2

10

1

10

500 700

SENSITIVITY (MIN.)

SUPPLY VOLTAGE (V)

Figure 5: Typical Time Response Figure 6: Typical Temperature Coefficient

of Anode Sensitivity

7

10

6

10

GAIN

5

10

4

10

3

10

20001500

TPMSB0052EA TPMSB0053EA

100

TRANSIT TIME

10

TIME (ns)

TEMPERATURE COEFFICIENT (%/ )

RISE TIME

1

500

1000

1500 2000

SUPPLY VOLTAGE (V)

+4.0

+3.0

+2.0

+1.0

0

-1.0

-2.0
200 400 600

-0.13%/

-0.25%/

WAVELENGTH (nm)

800 1000

PHOTOMULTlPLlER TUBE R3896

Figure 7: Dimensional Outline and Basing Diagram (Unit:mm)

T9
BULB

28.5 1.5
8MIN.

PHOTOCATHODE

24MIN.

80MAX.

94MAX.

49.0 2.5

32.2 0.5

11 PIN BASE
JEDEC No. B11-88

Figure 8: Optional Accessories (Unit:mm)

DY6

DY7

6

7

10

11

K

DY4

DY3

DY2

DY5

3

DY1

5

4

2

1

DIRECTION OF LIGHT

BOTTOM VIEW

(BASING DIAGRAM)

D Type Socket Assembly E717-21Socket E678-11A

DY8

8

DY9

9

P

TPMSA0008EA

PHOTO ­CATHODE

3.25

6.0

3.5

2.5

Cross Section

TPMSA0009EA

49
38

33

3.5

5

29

418

TACCA0064EA

Hamamatsu also provides C4900 series compact high voltage
power supplies and C6270 series DP type socket assemblies
which incorporate a DC to DC converter type high voltage
power supply.

PATENT PENDING : JAPAN 4, USA 4, EUROPE 4

3.5

33.0 0.3

4.8

41.0 0.5

450 10

5

38.0 0.3

49.0 0.3

29

31.0 0.5
HOUSING

(INSULATOR)

POTTING
COMPOUND

PMT

K

P

DY9

DY8

DY7

DY6

DY5

DY4

DY3

DY2

DY1

SOCKET

PIN No.

10

R10

9

R9

8

R8

7

R7

6

R6

5

R5

4

R4

3

R3

2

R2

1

R1

11

R to R10
C1 to C3

SIGNAL GND
SIGNAL OUTPUT RG-174/U

(BLACK)
POWER SUPPLY GND

AWG22 (BLACK)

C3

C2

C1

–HV

AWG22 (VIOLET)

: 330k
: 0.01 F

Warning–Personal Safety Hazards

Electrical Shock–Operating voltages applied to this

device present a shock hazard.

TACCA0002ED

HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]

United Kingdom:
North Europe:
Italy:

Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: [phone], Fax: [phone]

Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

TPMS1013E03
OCT. 1994