Datasheet R3636EC16#, R3636EC20# Datasheet (Westcode Semiconductors)

Date:- 30 Mar, 2007

WESTCODE

An IXYS Company

Distributed Gate Thyristor

Types R3636EC16# to R3636EC20#

Absolute Maximum Ratings

VOLTAGE RATINGS (Note 1)

V

DRM

V

DSM

V

RRM

V

RSM

I

T(AV)

I

T(AV)

I

T(AV)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI

I2t

diT/dt

V

RGM

P

G(AV)

P

GM

V

GD

T

j op

T

stg

Repetitive peak off-state voltage 1600-2000 V

Non-repetitive peak off-state voltage 1600-2000 V

Repetitive peak reverse voltage 1600-2000 V

Non-repetitive peak reverse voltage 1700-2100 V

OTHER RATINGS

Maximum average on-state current, T

Maximum average on-state current. T

Maximum average on-state current. T

Nominal RMS on-state current, T

D.C. on-state current, T

=25°C (note 4) 6233 A

sink

Peak non-repetitive surge tp=10ms, VRM=0.6V

Peak non-repetitive surge tp=10ms, VRM≤10V (note 5)

2

t capacity for fusing tp=10ms, VRM=0.6V

2

I

t capacity for fusing tp=10ms, VRM≤10V (note 5)

Maximum rate of rise of on-state current (repetitive) (Note 6) 500 A/µs

Maximum rate of rise of on-state current (non-repetitive) (Note 6) 1000 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 4 W

Peak forward gate power 50 W

Non-trigger gate voltage (Note 7) 0.25 V

Operating temperature range -40 to +125 °C

Storage temperature range -40 to +150 °C

=55°C (note 2) 3636 A

sink

=85°C (note 2) 2501 A

sink

=85°C (note 3) 1518 A

sink

=25°C (note 2) 7168 A

sink

(note 5) 38.9 kA

RRM

(note 5) 7.57×10

RRM

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

42.7 kA

6

9.12×10

6

UNITS

UNITS

A2s

A2s

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

7) Rated V

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 1 of 12 March, 2007

, IFG=2A, tr≤0.5µs, T

DRM

.

DRM

initial.

j

case

=125°C.

below 25°C.

j

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

Maximum peak on-state voltage - - 1.95 ITM=5000A V

TM

V

Maximum peak on-state voltage - - 2.86 ITM=10700A V

TM

V

Threshold voltage - - 1.173 V

0

r

Slope resistance - - 0.155

S

dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V

I

Peak off-state current - 60 300 Rated V

DRM

I

Peak reverse current - - 300 Rated V

RRM

V

Gate trigger voltage - - 3.0 V

GT

I

Gate trigger current - - 600

GT

V

Gate non-trigger voltage - - 0.25 Rated V

GD

I

Holding current - - 1000 Tj=25°C mA

H

t

Gate-controlled turn-on delay time - 0.8 1.5

gd

t

Turn-on time - 1.0 2.0

gt

Q

Recovered charge - 1750 - µC

rr

Q

Recovered charge, 50% chord - 750 1500 µC

ra

I

Reverse recovery current - 220 - A

rm

t

Reverse recovery time, 50% chord - 7.5 -

rr

- - 140

t

Turn-off time

q

60 - 200

R

Thermal resistance, junction to heatsink

thJK

- - 0.0075 Double side cooled K/W

- - 0.0150 Single side cooled K/W

=25°C VD=10V, IT=3A

T

j

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

I

=4000A, tp=2000µs, di/dt=60A/µs,

TM

V

=100V

r

ITM=4000A, tp=2000µs, di/dt=60A/µs,
V

=100V, Vdr=67%V

r

ITM=4000A, tp=2000µs, di/dt=60A/µs,
V

=100V, Vdr=67%V

r

, gate o/c, linear ramp

DRM

DRM

RRM

DRM

, IT=2000A, di/dt=60A/µs,

DRM

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

F Mounting force 63 - 77 kN

W

Weight - 1.23 - kg

t

mΩ

V/µs

mA

mA

mA

µs

µs

µs

Notes:-

1) Unless otherwise indicated T

2) The required t

details of t

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 2 of 12 March, 2007

(specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for

q

codes.

q

=125°C.

j

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

V

Voltage Grade

16 1600 1700 1040
18 1800 1900 1150
20 2000 2100 1250

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Rate of rise of on-state current

DRM VDSM VRRM

V

V

RSM

V

V

D VR

DC V

The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

1

max

f

=

vqpulse ttt

++

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 3 of 12 March, 2007

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

be the Energy per pulse for a given current and pulse width, in joules

Let E

p

Let R
and T

Then the average dissipation will be:

be the steady-state d.c. thermal resistance (junction to sink)

thJK

be the heat sink temperature.

K

11.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.

is based on a 150µs integration time.

(ii) Q

rr

i.e.

(iii)

12.0 Reverse Recovery Loss

.)(max

µ

150

=

∫

0

FactorK =

()

Fig. 1

s

dtiQ

.

rrrr

t

1

t

2

RWTfEW ⋅−=⋅= 125 and

thJKAVKPAV

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:

)()(

where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.

= d.c. thermal resistance (°C/W).

R

thJK

The total dissipation is now given by:

fEWW

(original)(TOT)

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 4 of 12 March, 2007

⋅+=

()

RfkETT ⋅+⋅−=

thJKoriginalKnewK

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

() ( )

Where T
T

K (original)

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. W hen measuring
the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:

2

R

Where: Vr= Commutating source voltage

⋅= 4

C

S

C

= Snubber capacitance

S

R = Snubber resistance

is the required maximum heat sink temperature and

K (new)

is the heat sink temperature given with the frequency ratings.

) of 67% of the maximum grade. If a different grade is being used or Vrm is other than

rm

V

r

di

⋅

dt

()

fRETT

⋅⋅−=

thoriginalKnewK

13.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 5 of 12 March, 2007

should remain flowing for the same duration as the anode current and have a

G

GT

.

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

p

p

14.0 Computer Modelling Parameters

14.1 Calculating VT using ABCD Coefficients

The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for V
which is limited to that plotted.

14.2 D.C. Thermal Impedance Calculation

given below:

T

vs VT, on page 7 is represented in two ways;

T

and rs tangent used for rating purposes and

0

()

agree with the true device characteristic over a current range,

T

25°C Coefficients 125°C Coefficients

A 1.699211 A 3.102332103

B 0.04818511 B -0.4078209

C 2.075468×10

D -0.01660626 D 0.03250304

-4

=

∑

=

p

C 4.569058×10

−

np




1

pt



1



t



τ

p

−⋅=



err




in

T

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-6

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.
r

= Thermal resistance at time t.

t

r

= Amplitude of pth term.
= Time Constant of rth term.

τ

D.C. Double Side Cooled

Term

r

p

τ

p

Term

r

p

τ

p

8.727296×10

6.087499 1.57797 0.1730504 0.01784783

123

3.589585×10

0.8082131 0.1832005 0.01869883

1234

-3

D.C. Single Side Cooled

-3

2.224163×10

2.412881×10

-3

-3

2.795381×10

-3

1.447505×10

1.378979×10

-3

-3

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 6 of 12 March, 2007

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Curves

Figure 1 – On-state characteristics of Limit device Figure 2 – Transient thermal impedance

(A)

T

10000

R3636EC16#-20#

Issue 1

Tj = 125°C Tj = 25°C

0.1
R3636EC16#-20#

0.01

Issue 1

SSC

0.015K/W

DSC

0.0075K/W

1000

Instantaneous on-state current - I

100

00.511.522.5

Instantaneous on-state voltage - V

(V)

T

0.001

Transient Thermal Impedance - Z(th)t (K/W)

0.0001

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Time (s)

Figure 3 – Gate characteristics – Trigger limits Figure 4 – Gate characteristics – Power curves

8

R3636EC16#-20#

Tj=25°C

7

6

(V)

5

GT

Issue 1

Max VG dc

20

Tj=25°C

18

16

14

(V)

GT

12

R3636EC16#-20#

Issue 1

Max VG dc

4

IGT, V

GT

3

Gate Trigger Voltage - V

10

PG Max 50W dc

8

Gate Trigger Voltage - V

6

2

125°C

25°C

-10°C

Min VG dc

-40°C

1

IGD, V

GD

0

00.511.5

Gate Trigger Current - I

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 7 of 12 March, 2007

(A)

GT

4

PG 4W dc

Min VG dc

2

0

0246810

Gate Trigger Current - I

(A)

GT

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Figure 5 – Total recovered charge, Q

10000

R3636EC16#-20#

Issue 1

Tj = 125°C

(µC)

rr

1000

Total recovered charge - Q

100

10 100 1000

Commutation rate - di/dt (A/µs)

rr

5000A
3000A
2000A

1000A

Figure 6 – Recovered charge, Qra (50% chord)

10000

R3636EC16#-20#

Issue 1

Tj = 125°C

5000A
3000A
2000A

(µC)

ra

1000

Recovered charge, 50% chord - Q

100

10 100 1000

Commutation rate - di/dt (A/µs)

1000A

Figure 7 – Peak reverse recovery current, I

10000

R3636EC16#-20#

Issue 1

Tj = 125°C

5000A

1000

(A)

rm

100

Reverse recovery current - I

10

10 100 1000

Commutation rate - di/dt (A/µs)

3000A
2000A
1000A

rm

Figure 8 – Maximum recovery time, trr (50% chord)

100

R3636EC16#-20#

Issue 1

Tj = 125°C

(µs)

rr

10

5000A
3000A
2000A
1000A

Reverse recovery time, 50% chord - t

1

10 100 1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 8 of 12 March, 2007

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Figure 9 – Reverse Recovery Energy Figure 10 – Sine wave energy per pulse

(J)

10

r

1

R3636EC16#-20#

Issue 1

Tj = 125°C
V

= 400V

r

Measured

without

snubber

4000A
3000A
2000A
1000A

1.00E+02

1.00E+01

1.00E+00

R3636EC16#-20#

Issue 1

Tj=125°C

6kA

4kA

2kA

1kA

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Reverse energy per pulse - E

0.1
10 100 1000

Commutation rate - di/dt (A/µs)

Energy per pulse (J)

1.00E-01

1.00E-02

Figure 11 – Sine wave frequency ratings Figure 12 – Sine wave frequency ratings

1.00E+05

1.00E+04

1kA

2kA

100% Duty Cycle

R3636EC16#-20#

Issue 1

TK=55°C

1.00E+05

1.00E+04

R3636EC16#-20#

1kA

100% Duty Cycle

2kA

Issue 1

TK=85°C

1.00E+03

Frequency (Hz)

1.00E+03

1.00E+02

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 9 of 12 March, 2007

4kA

6kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

Frequency (Hz)

1.00E+02

1.00E+01

4kA

6kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Figure 13 – Square wave frequency ratings Figure 14 – Square wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

2kA

4kA

6kA

R3636EC16#-20#

Issue 1

di/dt=100A/µs

TK=55°C

100% Duty Cycle

1.00E+05

1.00E+04

1.00E+03

1kA

2kA

4kA

6kA

R3636EC16#-20#

Issue 1

di/dt=500A/µs

TK=55°C

100% Duty Cycle

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 – Square wave frequency ratings Figure 16 – Square wave frequency ratings

1.00E+05

1.00E+04

1kA

2kA

R3636EC16#-20#

Issue 1

di/dt=100A/µs

TK=85°C

100% Duty Cycle

1.00E+05

1.00E+04

500A

1kA

2kA

R3636EC16#-20#

Issue 1

di/dt=500A/µs

100% Duty Cycle

TK=85°C

4kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 10 of 12 March, 2007

6kA

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

4kA

6kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Figure 17 – Square wave energy per pulse Figure 18 – Square wave energy per pulse

1.00E+03
R3636EC16#-20#

Issue 1

di/dt=100A/µs

Tj=125°C

1.00E+03
R3636EC16#-20#

Issue 1

di/dt=500A/µs

Tj=125°C

1.00E+02

1.00E+01

6kA

4kA

Energy per pulse (J)

1.00E+00

2kA

1.00E-01

1.00E-02

1kA

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 19 – Maximum surge and I2t Ratings

1000000

(A)

TSM

R3636EC16#-20#

Issue 1

Tj (initial) = 125°C

Gate may temporarily lose control of conduction angle

1.00E+02

1.00E+01

6kA

4kA

Energy per pulse (J)

1.00E+00

2kA

1kA

1.00E-01

500A

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

I2t: V

≤10V

RRM

I2t: 60% V

RRM

1.00E+08

100000

Total peak half sine surge current - I

10000

I

TSM

: 60% V

RRM

I

TSM

: V

RRM

≤10V

1.00E+07

1.00E+06

1 3 5 10 1 5 10 50 100

Duration of surge (ms)

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 11 of 12 March, 2007

Duration of surge (cycles @ 50Hz)

s)

2

t (A

2

Maximum I

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Outline Drawing & Ordering Information

101A352

ORDERING INFORMATION (Please quote 10 digit code as below)





R3636 EC

Fixed

Type Code

Typical order code: R3636EC18N – 1800V V

Fixed

Outline Code

DSM

, V

, 100µs tq, 26.5mm clamp height capsule.

RSM



Voltage code

V

/100

DRM

16-20

K=60µs, L=65µs, M=70µs, N=100µs,

P=120µs, R=140µs, S=160µs, T=200µs

WESTCODE

The information contained herein is confidential and is protected by Copyright. The i nformation may not be used or disclosed except
with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/l etter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.

#

Code

t

q

© Westcode Semiconductors Ltd.

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 12 of 12 March, 2007