Page 1
Date:- 26 Jun, 2001
WESTCODE
Provisional Data
Distributed Gate Thyristor
Types R3559TC16x to R3559TC20x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage 1600-2000 V
Non-repetitive peak off-state voltage 1600-2000 V
Repetitive peak reverse voltage 1600-2000 V
Non-repetitive peak reverse voltage 1700-2100 V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive) (Note 6) 500 A/µs
Maximum rate of rise of on-state current (non-repetitive) (Note 6) 1000 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 4 W
Peak forward gate power 50 W
Non-trigger gate voltage (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
(Note 1)
=55°C (note 2) 3559 A
sink
=85°C (note 2) 2421 A
sink
=85°C (note 3) 1447 A
sink
=25°C (note 2) 7060 A
sink
=25°C (note 4) 6038 A
sink
(note 5) 38.9 kA
RRM
≤
10V (note 5)
RM
(note 5) 7.57×10
RRM
≤
10V (note 5)
RM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
42.7 kA
6
9.12×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 1 of 12 June, 2001
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
Page 2
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)
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Characteristics
R3559TC16x to R3559TC20x
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
Maximum peak on-state voltage - - 1.95 ITM=5000A V
TM
V
Threshold voltage - - 1.173 V
0
r
Slope resistance - - 0.155
S
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
Peak off-state current - 60 300 Rated V
DRM
I
Peak reverse current - - 300 Rated V
RRM
V
Gate trigger voltage - - 3.0 V
GT
I
Gate trigger current - - 600
GT
I
Holding current - - 1000 Tj=25°C mA
H
t
Gate-controlled turn-on delay time - 0.8 1.5
gd
t
Turn-on time - 1.0 2.0
gt
Q
Recovered charge - 1750 - µC
rr
Q
Recovered charge, 50% Chord - 750 1500 µC
ra
I
Reverse recovery current - 220 - A
rm
t
Reverse recovery time, 50% chord - 7.5 -
rr
- - 140
t
Turn-off time
q
60 - 200
R
Thermal resistance, junction to heatsink
th(j-hs
- - 0.008 Double side cooled K/W
- - 0.016 Single side cooled K/W
=25°C VD=10V, IT=3A
T
j
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
I
=4000A, tp=2000µs, di/dt=60A/µs,
TM
V
=100V
r
ITM=4000A, tp=2000µs, di/dt=60A/µs,
V
=100V, Vdr=67%V
r
ITM=4000A, tp=2000µs, di/dt=60A/µs,
V
=100V, Vdr=67%V
r
, linear ramp
DRM
DRM
RRM
, IT=2000A, di/dt=60A/µs,
DRM
(Note 1)
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
µs
µs
µs
F Mounting force 63 - 77 kN
W
Weight - 1.23 - kg
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
2)
for details of t
codes.
q
Introduction
The R3559TC16x-20x Distributed Gate thyristor range features regenerative and interdigitated gating on a
fully floating silicon slice (manufacturing reference RTLXCH) mounted in a cold weld capsule.
These devices provide fast turn-on and turn-off characteristics and have low turn-on losses. Combined
with the large area silicon, they are therefore suitable for induction heating and other high current, medium
frequency applications.
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 2 of 12 June, 2001
Page 3
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
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R3559TC16x to R3559TC20x
V
Voltage Grade
16 1600 1700 1040
18 1800 1900 1150
20 2000 2100 1250
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
DRM VDSM VRRM
V
V
RSM
V
V
D VR
DC V
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
ttt
vqpulse
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 3 of 12 June, 2001
Page 4
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(
)
(
)
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
R3559TC16x to R3559TC20x
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
is based on a 150µs integration time.
(ii) Q
rr
i.e.
=
.)(max
150
∫
0
µ
s
rrrr
125
Fig. 1
.
dtiQ
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 4 of 12 June, 2001
FactorK
=
2
t
⋅+⋅−=
RfkETT
()
)()(
−
HsJthoriginalSINKnewSINK
Page 5
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The total dissipation is now given by:
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
Positive development in power electronics
(original)(TOT)
R3559TC16x to R3559TC20x
⋅+=
fEWW
() ( )
Where T
T
SINK (original)
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1
This thyristor has a low reverse recovered charge and peak reverse recovery current. W hen measuring
the charge care must be taken to ensure that:
R
- Reverse Recovery Loss by Measurement
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
2
4
SINK (new)
V
⋅=
⋅
C
S
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
rm
r
di
dt
()
⋅⋅−=
fRETT
thoriginalSINKnewSINK
Where: Vr= Commutating source voltage
C
= Snubber capacitance
S
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 5 of 12 June, 2001
Page 6
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p
p
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
Positive development in power electronics
R3559TC16x to R3559TC20x
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for V
which is limited to that plotted.
14.2 D.C. Thermal Impedance Calculation
given below:
T
vs VT, on page 7 is represented in two ways;
T
and rs tangent used for rating purposes and
0
()
ln
agree with the true device characteristic over a current range,
T
25°C Coefficients 125°C Coefficients
A 1.699211 A 3.102332103
B 0.04818511 B -0.4078209
C 2.075468×10
D -0.01660626 D 0.03250304
-4
=
∑
=
p
C 4.569058×10
−
np
1
pt
1
t
τ
p
−⋅=
err
⋅+⋅+⋅+=
in
T
IDICIBAV
TTTT
-6
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
τ
= Time Constant of rth term.
D.C. Double Side Cooled
Term123
r
p
τ
p
Term 1 2 3 4
r
p
τ
p
5.228149×10
0.9862513 0.2593041 0.03447094
0.01186497 3.872272×10
7.361938 1.651253 0.2019036 0.02934724
-3
D.C. Single Side Cooled
3.076205×10
-3
-3
3.457033×10
1.977511×10
-3
1.694157×10
-3
-3
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 6 of 12 June, 2001
Page 7
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Positive development in power electronics
R3559TC16x to R3559TC20x
Curves
Figure 1 – On-state characteristics of Limit device Figure 2 - Transient thermal impedance
10000
(A)
T
R3559TC16x-20x
Issue 1
Tj = 125°C Tj = 25°C
0.1
0.01
R3559TC16x-20x
Issue 1
SSC 0.016K/W
DSC 0.008K/W
1000
Instantaneous on-state current - I
100
1 1.5 2 2.5
Instantaneous on-state voltage - V
(V)
T
0.001
Transient Thermal Impedance - Z(th)t (K/W)
0.0001
0.00001
0.0001 0.001 0.01 0. 1 1 10 100
Time (s)
Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves
8
R3559TC16x-20x
Tj=25°C
7
6
(V)
5
GT
Issue 1
Max VG dc
20
R3559TC16x-20x
Tj=25°C
18
16
14
(V)
GT
12
Issue 1
Max VG dc
4
IGT, V
GT
3
Gate Trigger Voltage - V
10
8
Gate Trigger Voltage - V
PG Max 50W dc
6
2
125°C
25°C
-10°C
Min VG dc
-40°C
1
IGD, V
GD
0
00.511.5
Gate Trigger Current - I
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 7 of 12 June, 2001
(A)
GT
4
PG 4W dc
Min VG dc
2
0
0246810
Gate Trigger Current - I
(A)
GT
Page 8
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Positive development in power electronics
R3559TC16x to R3559TC20x
Figure 5 - Total recovered charge, Q
10000
R3559TC16x-20x
Issue 1
Tj = 125°C
(µC)
rr
1000
Total recovered charge - Q
100
10 100 1000
Commutation rate - di/dt (A/µs)
rr
5000A
3000A
2000A
1000A
Figure 6 - Recovered charge, Qra (50% chord)
10000
R3559TC16x-20x
Issue 1
Tj = 125°C
5000A
3000A
2000A
(µC)
ra
1000
Recovered charge, 50% chord - Q
100
10 100 1000
Commutation rate - di/dt (A/µs)
1000A
Figure 7 - Peak reverse recovery current, I
10000
5000A
1000
(A)
rm
100
Reverse recovery current - I
10
10 100 1000
Commutation rate - di/dt (A/µs)
3000A
2000A
1000A
Tj = 125°C
R3559TC16x-20x
Issue 1
rm
Figure 8 - Maximum recovery time, trr (50% chord)
100
(µs)
rr
10
5000A
3000A
2000A
1000A
Reverse recovery time, 50% chord - t
Tj = 125°C
R3559TC16x-20x
1
10 100 1000
Commutation rate - di/dt (A/µs)
Issue 1
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 8 of 12 June, 2001
Page 9
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Positive development in power electronics
R3559TC16x to R3559TC20x
Figure 9 – Reverse Recovery Energy Figure 10 - Sine wave energy per pulse
(J)
10
r
1
R3559TC16x-20x
Issue 1
Tj = 125°C
V
= 400V
r
Measured
without
snubber
4000A
3000A
2000A
1000A
1.00E+02
1.00E+01
1.00E+00
R3559TC16x-20x
Issue 1
Tj=125°C
6kA
4kA
2kA
1kA
500A
1.00E-05 1.00E-04 1.00 E-03 1.00E-02
Pulse width (s)
Reverse energy per pulse - E
0.1
10 100 1000
Commutation rate - di/dt (A/µs)
Energy per pulse (J)
1.00E-01
1.00E-02
Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+04
1kA
2kA
100% Duty Cycle
R3559TC16x-20x
Issue 1
1.00E+05
1.00E+04
R3559TC16x-20x
1kA
100% Duty Cycle
2kA
Issue 1
THs=85°C
1.00E+03
Frequency (Hz)
1.00E+03
1.00E+02
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 9 of 12 June, 2001
4kA
6kA
1.00E-05 1.00E-04 1.00 E-03 1.00E-02
Pulse Width (s)
Frequency (Hz)
1.00E+02
1.00E+01
4kA
6kA
1.00E-05 1.00E-04 1.00 E-03 1.00E-02
Pulse width (s)
Page 10
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Positive development in power electronics
R3559TC16x to R3559TC20x
Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+04
1.00E+03
2kA
4kA
6kA
R3559TC16x-20x
Issue 1
di/dt=100A/µs
THs=55°C
100% Duty Cycle
1.00E+05
1.00E+04
1.00E+03
1kA
2kA
4kA
6kA
R3559TC16x-20x
Issue 1
di/dt=500A/µs
THs=55°C
100% Duty Cycle
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00 E-03 1.00E-02
Pulse width (s)
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+04
1kA
2kA
R3559TC16x-20x
Issue 1
di/dt=100A/µs
THs=85°C
100% Duty Cycle
1.00E+05
1.00E+04
500A
1kA
2kA
R3559TC16x-20x
Issue 1
di/dt=500A/µs
THs=85°C
100% Duty Cycle
4kA
4kA
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00 E-03 1.00E-02
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 10 of 12 June, 2001
6kA
Pulse width (s)
1.00E+03
6kA
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00 E-03 1.00E-02
Pulse width (s)
Page 11
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Positive development in power electronics
R3559TC16x to R3559TC20x
Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+03
R3559TC16x-20x
Issue 1
di/dt=100A/µs
Tj=125°C
1.00E+03
R3559TC16x-20x
Issue 1
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
6kA
4kA
1.00E+00
Energy per pulse (J)
2kA
1.00E-01
1.00E-02
1kA
500A
1.00E-05 1.00E-04 1.00 E-03 1.00E-02
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
1000000
(A)
TSM
R3559TC16x-20x
Issue 1
Tj (initial) = 125°C
1.00E+02
1.00E+01
6kA
4kA
1.00E+00
Energy per pulse (J)
2kA
1kA
1.00E-01
500A
1.00E-02
1.00E-05 1.00E-04 1.00 E-03 1.00E-02
Pulse width (s)
≤
I2t: V
I2t: 60% V
RRM
10V
RRM
1.00E+08
s)
2
t (A
2
100000
1.00E+07
Maximum I
Total peak half sine surge current - I
10000
I
TSM
: 60% V
RRM
I
TSM
: V
RRM
≤
10V
1.00E+06
135101 510 50100
Duration of surge (ms)
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 11 of 12 June, 2001
Duration of surge (cycles @ 50Hz)
Page 12
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Positive development in power electronics
Outline Drawing & Ordering Information
R3559TC16x to R3559TC20x
ORDERING INFORMATION
R3559 TC
Fixed
Type Code
Typical order code: R3559TC16L – 1600V V
Outline Code
Fixed
DRM
, V
, 65µs tq, 26.1mm clamp height capsule.
RRM
(Please quote 10 digit code as below)
♦ ♦
♦ ♦ ♦♦♦♦
♦ ♦♦ ♦
Off-state Voltage Code
V
DRM
16-20
/100
Code
t
q
K=60µs, L=65µs,
M=70µs, N=100µs
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
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E-Mail: WSL.sales@westcode.com
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: 562 595 6971 Fax: 562 595 8182
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The i nformation may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessaril y subject to
the conditions and limits contained in this report.
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 12 of 12 June, 2001
E-Mail: WSI.sales@westcode.com
© Westcode Semiconductors Ltd.
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