Page 1
Date:- 21 Dec, 2000
WESTCODE
Distributed Gate Thyristor
Types R325CH02 to R325CH14
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Repetitive peak off-state voltage, (note 1) 200-1400 V
Non-repetitive peak off-state voltage, (note 1) 200-1400 V
Repetitive peak reverse voltage, (note 1) 200-1400 V
Non-repetitive peak reverse voltage, (note 1) 300-1500 V
OTHER RATINGS
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 1178 A
sink
=85°C, (note 2) 767 A
sink
=85°C, (note 3) 433 A
sink
=25°C, (note 2) 2395 A
sink
=25°C, (note 4) 892 A
sink
, (note 5) 17 kA
RRM
≤
10V, (note 5)
RM
, (note 5) 1.45×10
RRM
≤
10V, (note 5)
RM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
18.7 kA
6
1.75×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 1 of 12 December, 2000
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
Page 2
WESTCODE
Positive development in power electronics
Characteristics
R325CH02 to R325CH14
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
V
r
dv/dt Critical rate of rise of off-state voltage - - 200 VD=80% V
I
I
V
I
I
Q
t
R
Maximum peak on-state voltage - - 2.2 ITM=2000A V
TM
Threshold voltage - - 1.6 V
0
Slope resistance - - 0.3
S
Peak off-state current - - 150 Rated V
DRM
Peak reverse current - - 150 Rated V
RRM
Gate trigger voltage - - 3.0 Tj=25°C V
GT
Gate trigger current - - 300 Tj=25°C VD=10V, IT=2A mA
GT
Holding current - - 1000 Tj=25°C mA
H
Recovered charge, 50% Chord - 170 190
ra
--35
Turn-off time
q
25 - 40
Thermal resistance, junction to
θ
heatsink
- - 0.024 Double side cooled
- - 0.048 Single side cooled
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
DRM
RRM
=50V
r
=50V, Vdr=80%V
r
=50V, Vdr=80%V
r
DRM
(Note 1)
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
µC
µs
K/W
F Mounting force 19 - 26 kN
W
Weight - 510 - g
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 2 of 12 December, 2000
Page 3
WESTCODE
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Positive development in power electronics
R325CH02 to R325CH14
V
Voltage Grade 'H'
02 200 210 140
04 400 410 260
06 600 610 420
08 800 810 560
10 1000 1100 700
12 1200 1300 810
14 1400 1400 930
2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current The maxim um un-primed rate of rise of on-s tate current must not exceed 1500A/µs at any time dur ing
turn-on on a non-repetitive basis. For repetitive per formanc e, the on-state r ate of r ise of c urrent m ust not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.
8.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency The maximum operating frequenc y is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
ttt
vqpulse
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 3 of 12 December, 2000
Page 4
WESTCODE
(
)
(
)
)
10.0 On-State Energy per Pulse Characteristics These curves enable rapid estim ation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
R325CH02 to R325CH14
11.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
is based on a 150µs integration time.
(ii) Q
rr
i.e.
=
.)(max
150
∫
0
µ
s
rrrr
125
Fig. 1
.
dtiQ
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature c an
then be evaluated from the following:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s)
f = Rated frequency (in Hz) at the original heat sink temperature
R
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 4 of 12 December, 2000
= D.C. thermal resistance (°C/W)
th(J-Hs
FactorK
)()(
=
2
t
⋅+⋅−=
RfkETT
()
−
HsJthoriginalSINKnewSINK
Page 5
WESTCODE
The total dissipation is now given by:
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
Positive development in power electronics
(original)(TOT)
R325CH02 to R325CH14
⋅+=
fEWW
() ( )
Where T
T
SINK (original)
A suitable R-C snubber network is connected across the thyristor to restrict the transient revers e voltage
to a peak value (V
67% of Grade, the reverse loss m ay be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1
This thyristor has a low reverse recovered c harge and peak reverse recovery current. W hen measuring
the charge care must be taken to ensure that:
R
- Reverse Recovery Loss by Measurement
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connec ted to the input of the m easuring osc illoscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The form ula used for the c alculation
of this snubber is shown below:
2
4
SINK (new)
V
⋅=
⋅
C
S
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a diff erent grade is being used or Vrm is other than
rm
r
di
dt
()
⋅⋅−=
fRETT
thoriginalSINKnewSINK
Where: Vr= Commutating source voltage
C
= Snubber capacitance
S
R = Snubber resistance
13.0 Gate Drive
The recomm ended pulse gate drive is 20V, 10Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the necessary charge to
trigger the device.
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 5 of 12 December, 2000
Page 6
WESTCODE
p
p
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
Positive development in power electronics
R325CH02 to R325CH14
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting software, are given in this report for hot characteristics where
possible. The resulting values f or V
is limited to that plotted.
14.2 D.C. Thermal Impedance Calculation
given below:
T
vs. VT, on page 7 is represented in two ways;
T
and rs tangent used for rating purposes and
0
()
ln
agree with the true device characteristic over a c urrent range, which
T
125°C Coefficients
A 0.62329615
B 0.2341749
1
-4
−
t
τ
p
−⋅=
err
C 4.506305×10
D -0.02469732
=
np
∑
pt
=
p
1
in
T
⋅+⋅+⋅+=
IDICIBAV
TTTT
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
τ
= Time Constant of rth term.
D.C. Double Side Cooled
Term12345
r
p
τ
p
Term123456
r
p
τ
p
0.01249139 6.316833×10
0.8840810 0.1215195 0.03400152 6.742908×10
0.02919832 4.863568×10-33.744798×10-36.818034×10-32.183558×10-31.848294×10
6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10
-3
D.C. Single Side Cooled
1.850855×10
-3
1.922045×10
-3
-3
6.135330×10
1.326292×10
-4
-3
-3
-3
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 6 of 12 December, 2000
Page 7
WESTCODE
Positive development in power electronics
R325CH02 to R325CH14
Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
(A)
T
10000
Tj = 125°C
0.1
SSC 0.048K/W
DSC 0.024K/W
0.01
(K/W)
(th)t
1000
Instantaneous on-state current - I
R325CH02-14
(V)
T
Issue 1
100
012345
Instantaneous on-state voltage - V
0.001
Transient Thermal Impedance - Z
0.0001
0.00001
0.0001 0.001 0.01 0.1 1 10 100
Time (s)
R325CH02-14
Issue 1
Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves
(V)
6
5
4
GT
R325CH02-14
Issue 1
Tj=25°C
IGT, V
GT
Max VG dc
(V)
GT
20
18
16
14
12
R325CH02-14
Issue 1
Tj=25°C
Max VG dc
3
10
8
Gate Trigger Voltage - V
2
Gate Trigger Voltage - V
PG Max 30W dc
6
25°C
IGD, V
125°C
-10°C
1
GD
-40°C
Min VG dc
4
PG 2W dc
2
Min VG dc
0
0 0.25 0.5 0.75 1
Gate Trigger Current - I
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 7 of 12 December, 2000
(A)
GT
0
0246810
Gate Trigger Current - I
(A)
GT
Page 8
WESTCODE
Positive development in power electronics
R325CH02 to R325CH14
Figure 5 - Total recovered charge, Q
1000
2000A
(µC)
rr
100
Total recovered charge - Q
10
10 100 1000
Commutation r ate - di/dt (A/µs)
rr
1000A
500A
250A
Tj = 125°C
R325CH02-14
Issue 1
Figure 6 - Recovered charge, Qra (50% chord)
1000
2000A
1000A
500A
250A
(µC)
ra
100
Recovered charge - Q
Tj = 125°C
R325CH02-14
10
10 100 1000
Commutation r ate - di/dt (A/µs)
Issue 1
Figure 7 - Peak reverse recovery current, I
1000
2000A
1000A
500A
250A
(A)
rm
100
Reverse recovery current - I
Tj = 125°C
R325CH02-14
Issue 1
10
10 100 1000
Commutation r ate - di/dt (A/µs)
rm
Figure 8 - Maximum recovery time, trr (50% chord)
10
(µs)
rr
2000A
1000A
500A
250A
Reverse recovery time - t
Tj = 125°C
R325CH02-14
Issue 1
1
10 100 1000
Commutation r ate - di/dt (A/µs)
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 8 of 12 December, 2000
Page 9
WESTCODE
A
A
Positive development in power electronics
R325CH02 to R325CH14
Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse
1
2000A
1.00E+02
1.00E+01
R325CH02-14
Issue 1
Tj=125°C
(J)
r
0.1
1000A
500
1.00E+00
250
Energy per pulse (J)
5kA
3kA
2kA
Energy per pulse - E
1kA
500A
250A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Snubber:
0.25µF,3
Tj = 125°C
Vrm = 67% V
R325CH02-14
Issue 1
0.01
10 100 1000
Commutation r ate - di/dt (A/µs)
1.00E-01
Ω
RRM
1.00E-02
Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings
1.00E+05
500A
1.00E+04
1kA
100% Duty Cycle
R325CH02-14
Issue 1
THs=55°C
1.00E+05
1.00E+04
500A
1kA
100% Duty Cycle
2kA
1.00E+03
3kA
1.00E+03
Frequency (Hz)
5kA
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse Width (s)
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 9 of 12 December, 2000
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
2kA
3kA
5kA
THs=85°C
R325CH02-14
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Page 10
WESTCODE
Positive development in power electronics
R325CH02 to R325CH14
Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05
500A
1.00E+05
1kA
1.00E+04
2kA
3kA
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
THs=55°C
di/dt=100A/µs
R325CH02-14
1.00E+00
1.00E-05 1.00E-04 1.00E-03 1.00E-02
5kA
Issue 1
100% Duty Cycle
Pulse width (s)
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
500A
1kA
2kA
3kA
5kA
THs=55°C
di/dt=500A/µs
R325CH02-14
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
500A
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1kA
2kA
3kA
5kA
THs=85°C
di/dt=100A/µs
R325CH02-14
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
250A
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
500A
1kA
2kA
3kA
5kA
THs=85°C
di/dt=500A/µs
R325CH02-14
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 10 of 12 December, 2000
Page 11
WESTCODE
Positive development in power electronics
R325CH02 to R325CH14
Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+03
R325CH02-14
Issue 1
di/dt=100A/µs
Tj=125°C
1.00E+03
R325CH02-14
Issue 1
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
5kA
3kA
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
2kA
1kA
500A
250A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
1.00E+02
5kA
3kA
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
2kA
I2t: V
Pulse width (s)
≤
10V
RRM
1kA
500A
250A
1.00E+07
(A)
TSM
10000
Total peak half sine surge current - I
I2t: 60% V
I
: V
TSM
I
: 60% V
TSM
RRM
≤
RRM
10V
RRM
Tj (initial) = 125°C
1.00E+06
s)
2
t (A
2
Maximum I
R325CH02-14
Issue 1
1000
1.00E+05
135101 510 50100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 11 of 12 December, 2000
Page 12
WESTCODE
Positive development in power electronics
Outline Drawing & Ordering Information
R325CH02 to R325CH14
ORDERING INFORMATION
R325 CH
Fixed
Type Code
Note 1.: A single digit represents V
A zero in this position indi cates that V
Typical order code: R325CH10F2K7 – 1000V V
Typical order code: R325CH10F2K0 – 1000V V
Fixed
Outline Code
Off-state Voltage Code
RRM
♦ ♦
♦ ♦ ♦♦♦♦♦
♦ ♦♦ ♦
V
DRM
02-14
in 10% increments of t he selected V
=100% V
RRM
/100
. The examples shown below are for 70% and 100% respectivel y.
DRM
, 700V V
DRM
, 1000V V
DRM
RRM
RRM
(Please quote 11 or 12 digit code as bel ow)
dv/dt Code
C=20V/µs, D=50V/µs ,
E=100V/µs, F=200V/µs
, 200V/µs dv/dt, 40µs tq, 27.7mm clamp height capsule.
, 200V/µs dv/dt, 40µs tq, 27.7mm clamp height capsule.
DRM
.
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
WESTCODE
E-Mail: WSL.sales@westcode.com
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: 562 595 6971 Fax: 562 595 8182
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessari ly subject
to the conditions and limits contained in this report.
E-Mail: WSI.sales@westcode.com
♦(♦♦♦♦
)
♦♦
Code (@ 200V/µs)
t
q
J=25µs, H=30µs,
G=35µs, 2K=40µs
© Westcode Semiconductors Ltd.
♦♦♦♦
code
V
RRM
See note 1
below
Data Sheet. Types R325CH02 to R325CH14 Issue 1 Page 12 of 12 December, 2000
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