Datasheet R2075MC12x Datasheet (Westcode Semiconductors)

Distributed Gate Thyristor

Type R2075MC12x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

OTHER RATINGS

I

T(AVM)

I

T(AVM)

I

T(AVM)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, Vrm=0.6V
I2t

(di/dt)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200 V
Non-repetitive peak off-state voltage, (note 1) 1200 V
Repetitive peak reverse voltage, (note 1) 1200 V
Non-repetitive peak reverse voltage, (note 1) 1300 V

Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T

=25°C, (note 4) 3405 A

sink

Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs

cr

Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C

initial.

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

j

=125°C.

case

=55°C, (note 2) 2075 A

sink

=85°C, (note 2) 1365 A

sink

=85°C, (note 3) 720 A

sink

=25°C, (note 2) 4200 A

sink

, (note 5) 29.0 kA

RRM

, (note 5) 4.21×10

RRM

below 25°C.

j

Date:- 13

th

December 2014

Data Sheet Issue:- A2

MAXIMUM

LIMITS

MAXIMUM

LIMITS

31.9 kA

6

5.09×10

6

UNITS

UNITS

A2s
A2s

Data Sheet. Type R2075MC12x Issue A2 Page 1 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 200 - - VD=80% V
I

DRM

I

RRM

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rm

t

rr

t

q

Maximum peak on-state voltage - - 1.90 ITM=2200A V
Maximum peak on-state voltage - - 2.42 ITM=6200A V
Threshold voltage - - 1.390 V
Slope resistance - - 0.167

, Linear ramp, Gate o/c

DRM

Peak off-state current - - 100 Rated V
Peak reverse current - - 100 Rated V
Gate trigger voltage - - 3.0 V

T

Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V

DRM

RRM

=25°C VD=10V, IT=3A

j

DRM

mΩ

V/µs

mA
mA

mA

V
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 0.5 1.0
Turn-on time - 0.8 1.6

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, ITM=1000A, di/dt=60A/µs,

DRM

µs

Recovered charge - 230 300 µC
Recovered charge, 50% Chord - 120 - µC
Reverse recovery current - 95 - A
Reverse recovery time - 2.3 -

- 10 -

Turn-off time (note 2)

- 12 -

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V

r

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, Vdr=33%V

r

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, Vdr=33%V

r

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

µs

µs

- - 0.015 Double side cooled K/W

R

thJK

Thermal resistance, junction to heatsink

- - 0.028 Anode side cooled K/W

- - 0.033 Cathode side cooled K/W
F Mounting force 19 - 26 kN
W

t

Weight - 510 - g

Notes:-

1) Unless otherwise indicated T

2)

The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t

codes.

q

=125°C.

j

Data Sheet. Type R2075MC12x Issue A2 Page 2 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

12 1200 1300 810

2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time
This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I
(t

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

.

GT

Data Sheet. Type R2075MC12x Issue A2 Page 3 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

(

)

⋅−=

9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum

ratings shown on page 1.

10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

f

13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.
Let E

Let R
and T

Then the average dissipation will be:

max

=

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

1

vqpulse ttt

++

⋅= 125

14.0 Reverse recovery ratings
(i) Q

is based on 50% Irm chord as shown in Fig. 1

ra

is based on a 50µs integration time i.e.

(ii) Q

rr

(iii)

RWT and fEW

()

.)(max

−

HsJthAVSINKPAV

Fig. 1

s

µ

150

=

rrrr

∫

0

FactorK =

dtiQ

.

1

t

2

t

Data Sheet. Type R2075MC12x Issue A2 Page 4 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

(

)

⋅+⋅

⋅

(

⋅

⋅

15.0 Reverse Recovery Loss

15.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:

−=

)()(

Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R

The total dissipation is now given by:

15.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

() ( )

Where T
T

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge, care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:

= d.c. thermal resistance (°C/W).

th(J-Hs)

+=

SINK (new)

SINK (original)

(original)(TOT)

is the required maximum heat sink temperature and

is the heat sink temperature given with the frequency ratings.

) of 67% of the maximum grade. If a different grade is being used or Vrm is other than

rm

fEWW

−=

RfkETT

()

−

)

fRETT

thoriginalSINKnewSINK

HsJthoriginalSINKnewSINK

=

2

R

Data Sheet. Type R2075MC12x Issue A2 Page 5 of 13 December 2014

V

C

r

di

⋅

dt

S

Where:

⋅= 4

V
C
R

r
S

Commutating source voltage

=

Snubber capacitance

=

Snubber resistance

Distributed Gate Thyristor type R2075MC12x

(

16.0 Computer Modelling Parameters

16.1 Calculating V

using ABCD Coefficients

T

The on-state characteristic I
(i) the well established V

vs VT, on page 8 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

given below:

T

in

T

)

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for V

agree with the true device characteristic over a current range,

T

which is limited to that plotted.

25°C Coefficients 125°C Coefficients

A 1.896672 0.9411555
B 0.1253406 0.2449814
C 1.0811×10

-4

3.5544×10

-4

D -0.0136753 -0.0364255

Data Sheet. Type R2075MC12x Issue A2 Page 6 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

16.2 D.C. Thermal Impedance Calculation

−

=

np

⎛
⎜

∑

=

p

1

1

pt

⎜
⎝

t

⎞

τ

p

⎟

err

−⋅=
⎟

⎠

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

= Thermal resistance at time t.

r

t

r

= Amplitude of pth term.

p

= Time Constant of rth term.

τ

p

D.C. Single Side Cooled

Term 1 2 3 4 5

p

p

9.104123×10

0.7550773 0.1091817 0.03500190 8.477858×10

r

τ

-3

3.619725×10

-3

7.903528×10

-4

1.293186×10

-3

1.020409×10

-3

1.163500×10

-4

-3

D.C. Anode Side Cooled

Term 1 2 3 4

r

p

τ

p

0.01810857 4.157607×10

4.193879 0.4707370 0.08453147 5.073650×10

-3

4.191171×10

-3

1.205064×10

-3

-3

D.C. Cathode Side Cooled

Term 1 2 3 4

r

p

τ

p

0.02445377 5.055305×10

4.454021 0.2250056 0.04386925 5.603667×10

-3

2.064040×10

-3

1.142007×10

-3

-3

Data Sheet. Type R2075MC12x Issue A2 Page 7 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

A

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

(K/W)

(th)t

0.1

0.01

R2075MC12x

Issue A2

KSC 0.033K/W

SC 0.028KW

DSC 0.015K/W

(A)

T

10000

R2075MC12x

Issue A2

1000

Instantaneous on-state current - I

100

00.511.522.533.5

Tj = 125°C

Instantaneous on-state voltage - V

Tj = 25°C

(V)

T

Figure 3 - Gate characteristics - Trigger limits

6

R2075MC12x

Issue A2

Tj=25°C

5

Max VG dc

GT

(V)

4

GT

IGT, V

3

0.001

Transient Thermal Impedance - Z

0.0001

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Time (s)

Figure 4 - Gate characteristics - Power curves

18

R2075MC12x

Issue A2

Tj=25°C

16

14

Max VG dc

12

(V)

GT

10

8

Gate Trigger Voltage - V

2

25°C

1

IGD, V

GD

0

0 0.2 0.4 0.6 0.8 1

125°C

Gate Trigger Current - I

-10°C

-40°C

Min VG dc

(A)

GT

Data Sheet. Type R2075MC12x Issue A2 Page 8 of 13 December 2014

Gate Trigger Voltage - V

6

4

2

0

02468

PG 5W dc

Gate Trigger Current - I

PG Max 30W dc

Min VG dc

(A)

GT

10

Figure 5 - Total recovered charge, Q

1000

R2075MC12x

Issue A2

Tj = 125°C

(µC)

rr

rr

2000A
1500A

1000A

500A

Distributed Gate Thyristor type R2075MC12x

Figure 6 - Recovered charge, Qra (50% chord)

1000

R2075MC12x

Issue A2

Tj = 125°C

2000A
1500A
1000A
500A

(µC)

ra

100

Total recovered charge - Q

100

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 7 - Peak reverse recovery current, I

1000

R2075MC12x

Issue A2

Tj = 125°C

2000A
1500A
1000A

(A)

rm

100

500A

Total recovered charge - Q

10

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 8 - Maximum recovery time, t

rm

10

R2075MC12x

Issue A2

Tj = 125°C

(µs)

rr

(50% chord)

rr

Reverse recovery current - I

10

10 100 1000

Commutation rate - di/dt (A/µs)

Reverse recovery time - t

1

10 100 1000

Commutation rate - di/dt (A/µs)

2000A
1500A

1000A
500A

Data Sheet. Type R2075MC12x Issue A2 Page 9 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

Figure 9 – Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse

1000

(mJ)

r

100

R2075MC12x

Issue A2

Tj = 125°C
Vrm = 80% V

RRM

2000A
1500A
1000A
500A

1.00E+02

1.00E+01

1.00E+00

R2075MC12x

Issue A2

Tj=125°C

5kA

3kA

2kA

1.00E-01

Energy per pulse (J)

Energy per pulse - E

1.00E-02

1kA

500A

250A

10

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 11 - Sine wave frequency ratings

1.00E+05

1kA

100% Duty Cycle

2kA

1.00E+04
3kA

5kA

1.00E+03

Frequency (Hz)

1.00E+02

R2075MC12x

Issue A2

THs=55°C

1.00E-03

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 12 - Sine wave frequency ratings

1.00E+05

1kA

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

2kA

3kA

5kA

100% Duty Cycle

R2075MC12x

Issue A2

THs=85°C

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Type R2075MC12x Issue A2 Page 10 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings

5kA

100% Duty Cycle

R2075MC12x

Issue A2

THs=55°C

di/dt=100A/µs

1.00E+05

2kA

1.00E+04

1kA

3kA

5kA

R2075MC12x

di/dt=500A/µs

100% Duty Cycle

Issue A2

THs=55°C

1.00E+05

2kA

1.00E+04
3kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1kA

2kA

3kA

5kA

R2075MC12x

di/dt=100A/µs

100% Duty Cycle

Issue A2

THs=85°C

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1kA

3kA

5kA

500A

2kA

100% Duty Cycle

R2075MC12x

Issue A2

THs=85°C

di/dt=500A/µs

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Type R2075MC12x Issue A2 Page 11 of 13 December 2014

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Distributed Gate Thyristor type R2075MC12x

Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse

1.00E+03

1.00E+02

1.00E+01

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

500A

R2075MC12x

Issue A2
di/dt=100A/µs
Tj=125°C

1kA

250A

2kA

5kA

3kA

1.00E+03

1.00E+02

1.00E+01

1.00E+00

Energy per pulse (J)

1.00E-01

R2075MC12x

Issue A2
di/dt=500A/µs
Tj=125°C

5kA
3kA
2kA

1kA
500A
250A

1.00E-03

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

Gate may temporarily lose control of conduction angle

100000

(A)

TSM

10000

Total peak half sine surge current - I

1000

1 3 5 10 1 5 10 50 100

Duration of surg e (ms) Duration of surge (cycles @ 50Hz)

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+08

RRM

: V

RRM

: 60% V

≤

≤

10V

RRM

10V

1.00E+07

RRM

1.00E+06

I2t: V

I2t: 60% V

I

TSM

I

TSM

R2075MC12x

Issue A2

T

(initial) = 125°C

j

s)

2

t (A

2

Maximum I

Data Sheet. Type R2075MC12x Issue A2 Page 12 of 13 December 2014

Outline Drawing & Ordering Information

Distributed Gate Thyristor type R2075MC12x

101A357

ORDERING INFORMATION (Please quote 10 digit code as below)

R2075 MC

Fixed

Type Code

Typical order code: R2075MC120B – 1200V V

The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.

Fixed

Outline Code

, 12µs tq, 26mm clamp height capsule.

DRM

♦ ♦ #

Fixed Voltage Code

V

/100

DRM

12

t

Code

A=10µs, B=12µs, C=15µs

q

© IXYS UK Westcode Ltd.

Data Sheet. Type R2075MC12x Issue A2 Page 13 of 13 December 2014