Datasheet R1446NS10x, R1446NS12x Datasheet (Westcode Semiconductors)

Date:- 15 Jun, 2001

WESTCODE

Distributed Gate Thyristor

Types R1446NS10x to R1446NS12x

Absolute Maximum Ratings

VOLTAGE RATINGS

V

DRM

V

DSM

V

RRM

V

RSM

I

T(AV)

I

T(AV)

I

T(AV)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI
I2t

diT/dt

V

RGM

P

G(AV)

P

GM

V

GD

T

HS

T

stg

Repetitive peak off-state voltage, (note 1) 1000-1200 V
Non-repetitive peak off-state voltage, (note 1) 1000-1200 V
Repetitive peak reverse voltage, (note 1) 1000-1200 V
Non-repetitive peak reverse voltage, (note 1) 1100-1300 V

OTHER RATINGS

Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V

2

t capacity for fusing tp=10ms, VRM=0.6V

2

t capacity for fusing tp=10ms, V

I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C

=55°C, (note 2) 1446 A

sink

=85°C, (note 2) 942 A

sink

=85°C, (note 3) 531 A

sink

=25°C, (note 2) 2940 A

sink

=25°C, (note 4) 1871 A

sink

, (note 5) 19.5 kA

RRM

≤

10V, (note 5)

RM

, (note 5) 1.9×10

RRM

≤

10V, (note 5)

RM

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

21.5 kA

6

6

2.3×10

UNITS

UNITS

A2s
A2s

Notes:-

1)

De-rating factor of 0.13% per °C is applicable for Tj below 25°C.

2)

Double side cooled, single phase; 50Hz, 180° half-sinewave.

3)

Single side cooled, single phase; 50Hz, 180° half-sinewave.

4)

Double side cooled.

5)

Half-sinewave, 125°C Tj initial.

6)

VD=67% V

7)

Rated V

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 1 of 12 June, 2001

DRM

, IFG=2A, t

DRM

.

≤

0.5µs, T

r

case

=125°C.

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Characteristics

R1446NS10x to R1446NS12x

PARAMETER MIN. TYP. MAX. TEST CONDITIONS

V
V
r

S

dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I

DRM

I

RRM

V
I

GT

I

H

t

gd

t

gt

Q
Q
I

rm

t

rr

t

q

R

TM

0

GT

rr

ra

th (j-hs)

Maximum peak on-state voltage - - 1.7 ITM=2000A V
Threshold voltage - - 1.304 V
Slope resistance - - 0.199

Peak off-state current - - 150 Rated V
Peak reverse current - - 150 Rated V

DRM

RRM

Gate trigger voltage - - 3.0 Tj=25°C V
Gate trigger current - - 300 Tj=25°C VD=10V, IT=2A mA
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 0.5 1.0
Turn-on time - 1.0 2.0

VD=67%V
I

=2A, t

FG

Recovered charge - 300 - µC
Recovered charge, 50% Chord - 120 150 µC
Reverse recovery current - 100 - A

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V

r

Reverse recovery time, 50% chord - 2.8 -

--30

Turn-off time (note 2)

25 - 35

ITM=1000A, tp=1000µs, di/dt=60A/µs,
V

=50V, Vdr=80%V

r

ITM=1000A, tp=1000µs, di/dt=60A/µs,
V

=50V, Vdr=80%V

r

- - 0.024 Double side cooled

Thermal resistance, junction to heatsink

- - 0.048 Single side cooled

(Note 1)

linear ramp

DRM,

, ITM=2000A, di/dt=60A/µs,

DRM

≤

0.5µs, T

r

=25°C

case

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

UNITS

m

V/µs

mA

µs

µs

µs

K/W

F Mounting force 19 - 26 kN
W

Weight - 510 - g

t

Ω

Notes:-

Unless otherwise indicated Tj=125°C.

1)

The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the devic e part number. See ordering inform ation for

2)

details of t

codes.

q

Introduction

The R1446 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses and are therefore suitable for
medium current, medium frequency applications.

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 2 of 12 June, 2001

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

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R1446NS10x to R1446NS12x

V

Voltage Grade

10 1000 1100 700
12 1200 1300 810

2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Rate of rise of on-state current The maxim um un-primed rate of rise of on-s tate current must not exceed 1500A/µs at any time dur ing

turn-on on a non-repetitive basis. For repetitive per formanc e, the on-state r ate of r ise of c urrent m ust not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.

8.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency The maximum operating frequenc y is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

1

=

max

f

++

vqpulse

ttt

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 3 of 12 June, 2001

WESTCODE

(

)

(

)

)

10.0 On-State Energy per Pulse Characteristics These curves enable rapid estim ation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Then the average dissipation will be:

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be the Energy per pulse for a given current and pulse width, in joules

Let E

p

Let R
and T

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

R1446NS10x to R1446NS12x

11.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 below.

is based on a 150µs integration time.

(ii) Q

rr

i.e.

=

.)(max

150

∫

0

µ

s

125

.

dtiQ

rrrr

Fig. 1

⋅−=⋅=

RWT and fEW

()

−

HsJthAVSINKPAV

1

t

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature c an
then be evaluated from the following:

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s)

f = Rated frequency (in Hz) at the original heat sink temperature

R

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 4 of 12 June, 2001

= D.C. thermal resistance (°C/W)

th(J-Hs

FactorK

)()(

=

2

t

⋅+⋅−=

RfkETT

()

−

HsJthoriginalSINKnewSINK

WESTCODE

The total dissipation is now given by:

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

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(original)(TOT)

R1446NS10x to R1446NS12x

⋅+=

fEWW

() ( )

Where T
T

SINK (original)

A suitable R-C snubber network is connected across the thyristor to restrict the transient revers e voltage
to a peak value (V
67% of Grade, the reverse loss m ay be approximated by a pro rata adjustment of the maximum value
obtained from the curves.

NOTE 1

This thyristor has a low reverse recovered c harge and peak reverse recovery current. W hen measuring
the charge care must be taken to ensure that:

R

- Reverse Recovery Loss by Measurement

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connec ted to the input of the m easuring osc illoscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The form ula used for the c alculation
of this snubber is shown below:

2

4

SINK (new)

V

⋅=

⋅

C

S

is the required maximum heat sink temperature and

is the heat sink temperature given with the frequency ratings.

) of 67% of the maximum grade. If a diff erent grade is being used or Vrm is other than

rm

r

di

dt

()

⋅⋅−=

fRETT

thoriginalSINKnewSINK

Where: Vr= Commutating source voltage

C

= Snubber capacitance

S

R = Snubber resistance

13.0 Gate Drive

The recomm ended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the necessary charge to
trigger the device.

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 5 of 12 June, 2001

WESTCODE

p

p

14.0 Computer Modelling Parameters

14.1 Calculating VT using ABCD Coefficients

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R1446NS10x to R1446NS12x

The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

The constants, derived by curve fitting software, are given in this report for hot characteristics where
possible. The resulting values f or V
is limited to that plotted.

14.2 D.C. Thermal Impedance Calculation

given below:

T

vs. VT, on page 7 is represented in two ways;

T

and rs tangent used for rating purposes and

0

()

ln

agree with the true device characteristic over a c urrent range, which

T

125°C Coefficients

A 0.8671973
B 0.09686685

1

-4

-3

−

t



τ

p

−⋅=



err




C 2.4804×10
D -8.92292×10

=

np




∑

pt

=

p



1



in

T

⋅+⋅+⋅+=

IDICIBAV

TTTT

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

= Thermal resistance at time t.

r

t

r

= Amplitude of pth term.

τ

= Time Constant of rth term.

D.C. Double Side Cooled

Term12345

r

p

τ

p

Term123456

r

p

τ

p

0.01249139 6.316833×10

0.8840810 0.1215195 0.03400152 6.742908×10

0.02919832 4.863568×10-33.744798×10-36.818034×10-32.183558×10-31.848294×10

6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10

-3

D.C. Single Side Cooled

1.850855×10

-3

1.922045×10

-3

-3

6.135330×10

1.326292×10

-4

-3

-3

-3

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 6 of 12 June, 2001

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R1446NS10x to R1446NS12x

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

(A)

T

10000

Tj = 125°C

0.1

SSC 0.048K/W

DSC 0.024K/W

0.01

(K/W)

(th)t

1000

Instantaneous on-state current - I

0.001

Transient Thermal Impedance - Z

0.0001

R1446NS10x-12x

100

00.511.522.533.5

Instantaneous on-state voltage - V

Issue 1

(V)

T

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Time (s)

R1446NS10x-12x

Issue 1

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves

(V)

GT

20

18

16

14

12

R1446NS10x-12x

Issue 1

Tj=25°C

Max VG dc

6

R1446NS10x-12x

Tj=25°C

5

4

(V)

GT

IGT, V

Issue 1

Max VG dc

GT

3

10

8

Gate Trigger Voltage - V

2

1

IGD, V

GD

125°C

25°C

-10°C

-40°C

Min VG dc

Gate Trigger Voltage - V

6

4

PG 2W dc

2

PG Max 30W dc

Min VG dc

0

0 0.25 0.5 0.75 1

Gate Trigger Current - I

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 7 of 12 June, 2001

(A)

GT

0

0246810

Gate Trigger Current - I

(A)

GT

WESTCODE

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R1446NS10x to R1446NS12x

Figure 5 - Total recovered charge, Q

1000

(µC)

rr

Total recovered charge - Q

100

10 100 1000

Commutation rate - di/dt (A/µs)

rr

2000A

1500A
1000A

500A

Tj = 125°C

R1446NS10x-12x

Issue 1

Figure 6 - Recovered charge, Qra (50% chord)

1000

2000A
1500A
1000A

500A

(µC)

ra

100

Recovered charge - Q

Tj = 125°C

R1446NS10x-12x

Issue 1

10

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 7 - Peak reverse recovery current, I

1000

2000A
1500A
1000A
500A

(A)

rm

100

Reverse recovery current - I

Tj = 125°C

R1446NS10x-12x

10

10 100 1000

Commutation rate - di/dt (A/µs)

Issue 1

rm

Figure 8 - Maximum recovery time, trr (50% chord)

10

(µs)

rr

2000A
1500A

Reverse recovery time - t

1000A
500A

Tj = 125°C

R1446NS10x-12x

Issue 1

1

10 100 1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 8 of 12 June, 2001

WESTCODE

A

A

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R1446NS10x to R1446NS12x

Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse

1

2000

1.00E+02

1.00E+01

R1446NS10x-12x

Issue 1

Tj=125°C

5kA

(J)

r

0.1

Energy per pulse - E

1000

500A

250A

Snubber:

0.25µF,5

1.00E+00

1.00E-01

Energy per pulse (J)

Ω

1.00E-02

3kA

2kA

1kA

500A

250A

Tj = 125°C

Vrm = 67% V

R1446NS10x-12x

0.01
10 100 1000

Commutation rate - di/dt (A/µs)

RRM

Issue 1

1.00E-03

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings

1.00E+05

1.00E+04

1kA

2kA

R1446NS10x-12x

100% Duty Cycle

Issue 1

THs=55°C

1.00E+05

1.00E+04

500A

1kA

2kA

100% Duty Cycle

3kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 9 of 12 June, 2001

5kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

3kA

5kA

THs=85°C
R1446NS10x-12x

Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

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R1446NS10x to R1446NS12x

Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+05

1kA

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

2kA

3kA

5kA

THs=55°C
di/dt=100A/µs

R1446NS10x-12x

Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

100% Duty Cycle

Pulse width (s)

500A

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

1kA

3kA

5kA

THs=55°C
di/dt=500A/µs

R1446NS10x-12x

Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

100% Duty Cycle

2kA

Pulse width (s)

Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings

1.00E+05

500A

100% Duty Cycle

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1kA

2kA

3kA

5kA

THs=85°C
di/dt=100A/µs

R1446NS10x-12x

Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

250A

500A

1kA

3kA

5kA

THs=85°C
di/dt=500A/µs

R1446NS10x-12x

2kA

Issue 1

100% Duty Cycle

Pulse width (s)

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 10 of 12 June, 2001

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R1446NS10x to R1446NS12x

Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse

1.00E+03
R1446NS10x-12x

Issue 1
di/dt=100A/µs
Tj=125°C

1.00E+03
R1446NS10x-12x

Issue 1
di/dt=500A/µs
Tj=125°C

1.00E+02

1.00E+01

5kA

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

3kA

2kA

1kA

500A

250A

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

Gate may temporarily lose control of conduction angle

100000

1.00E+02

5kA
3kA

1.00E+01

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

2kA

Pulse width (s)

1kA
500A
250A

1.00E+08

(A)

TSM

I2t: V

I2t: 60% V

RRM

≤

10V

RRM

1.00E+07

2

2

s)
t (A

10000

: V

RRM

: 60% V

≤

10V

RRM

1.00E+06

Maximum I

Total peak half sine surge current - I

I

TSM

I

TSM

Tj (initial) = 125°C
R1446NS10x-12x

Issue 1

1000

1.00E+05

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 11 of 12 June, 2001

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Outline Drawing & Ordering Information

R1446NS10x to R1446NS12x

ORDERING INFORMATION

R1446 NS

Fixed

Type Code

Typical order code: R1446NS12F – 1200V V

Outline Code

Fixed

, 30µs tq, 27.7mm clamp height capsule.

DRM

(Please quote 10 digit code as bel ow)

♦ ♦

♦ ♦ ♦♦♦♦

♦ ♦♦ ♦

Off-state Voltage Code

V

DRM

/100

10-12

UK: Westcode Semiconductors Ltd.

P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.

Tel: [phone] Fax: [phone]

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E-Mail: [e-mail]

USA: Westcode Semiconductors Inc.

3270 Cherry Avenue, Long Beach, California 90807

Tel: [phone] Fax: [phone]

Internet: http://www.westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessari ly subject
to the conditions and limits contained in this report.

E-Mail: [e-mail]

Code (@ 200V/µs)

t

q

E=25µs, F=30µs,

G=35µs,

© Westcode Semiconductors Ltd.

Data Sheet. Types R1446NS10x to R1446NS12x Issue 1 Page 12 of 12 June, 2001