Datasheet R1271NC12x Datasheet (Westcode Semiconductors)

Date:- 01 August 2012

2

Data Sheet Issue:- 2

Distributed Gate Thyristor

Type R1271NC12x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200 V
Non-repetitive peak off-state voltage, (note 1) 1200 V
Repetitive peak reverse voltage, (note 1) 1200 V
Non-repetitive peak reverse voltage, (note 1) 1300 V

OTHER RATINGS

I

Mean on-state current, T

T(AV)

I

Mean on-state current. T

T(AV)

I

Mean on-state current. T

T(AV)

I

Nominal RMS on-state current, T

T(RMS)

I

D.C. on-state current, T

T(d.c.)

I

Peak non-repetitive surge tp=10ms, VRM=0.6V

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, VRM=0.6V
I2t

(di/dt)cr

V

RGM

P

G(AV)

PGM Peak forward gate power 30 W
VGD Non-trigger gate voltage, (Note 7) 0.25 V
THS Operating temperature range -40 to +125 °C
T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

7) Rated V

Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

2

t capacity for fusing tp=10ms, VRM≤10V, (note 5)

I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 2 W

Storage temperature range -40 to +150 °C

initial.

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

.

DRM

j

=55°C, (note 2) 1271 A

sink

=85°C, (note 2) 821 A

sink

=85°C, (note 3) 458 A

sink

=25°C, (note 2) 2599 A

sink

=25°C, (note 4) 2050 A

sink

, (note 5) 18.0 kA

RRM

, (note 5) 1.62×106 A

RRM

below 25°C.

j

=125°C.

case

MAXIMUM

LIMITS

MAXIMUM

LIMITS

19.8 kA

1.96×10

6

A

UNITS

UNITS

s

2

s

Data Sheet. Type R1271NC12x Issue 2 Page 1 of 12 August 2012

Distributed gate thyristor R1271NC12x

r

r

r

r

r

r

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

VTM Maximum peak on-state voltage - - 2.02 ITM=2000A V
VT0

rT
(dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V

I

DRM

I

RRM

VGT Gate trigger voltage - - 3.0 Tj=25°C V
IGT Gate trigger current - - 300 Tj=25°C VD=10V, IT=2A mA
IH Holding current - - 1000 Tj=25°C mA
t

gd

t

gt

Q

rr

Q

ra

Irm Reverse recovery current - 85 - A
t

rr

tq Turn-off time (note 2)

R

thJK

F Mounting force 19 - 26 kN
Wt Weight - 510 - g

Threshold voltage - - 1.547 V
Slope resistance - - 0.237

, Linear ramp

DRM

Peak off-state current - - 150 Rated V
Peak reverse current - - 150 Rated V

Gate controlled turn-on delay time - 0.5 1.0
Turn-on time - 1.0 2.0

=67%V

V

D

=2A, tr≤0.5µs, T

I

FG

DRM

RRM

, ITM=2000A, di/dt=60A/µs,

DRM

case

=25°C
Recovered charge - 200 ­Recovered charge, 50% Chord - 120 150 µC

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V

r

Reverse recovery time, 50% chord - 2.0 - µs

I

=1000A, tp=1000µs, di/dt=60A/µs,

- - 22

12 - 25

TM

V

=50V, V

I

=1000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V, V

=80%V

d

=80%V

d

DRM

DRM

, dV
, dV

d

d

/dt=20V/µs
/dt=200V/µs

- - 0.024 Double side cooled

Thermal resistance, junction to heatsink

- - 0.048 Single side cooled

mΩ

V/µs

mA

µs

µC

µs

K/W

Notes:-

1) Unless otherwise indicated T

The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering information for

2)

details of t

codes.

q

=125°C.

j

Data Sheet. Type R1271NC12x Issue 2 Page 2 of 12 August 2012

Distributed gate thyristor R1271NC12x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table
V

Voltage Grade

DRM VDSM VRRM

V

12 1200 1300 810

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(t

) and for the off-state voltage to reach full value (tv), i.e.

q

f

max

=

1

vqpulse ttt

++

V

RSM

V

VD VR

DC V

below 25°C.

j

Data Sheet. Type R1271NC12x Issue 2 Page 3 of 12 August 2012

Distributed gate thyristor R1271NC12x

(

)

⋅−=

(

)

⋅+⋅

)

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

Let E
Let R
and T

Then the average dissipation will be:

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

⋅= 125

11.0 Reverse recovery ratings

is based on 50% Irm chord as shown in Fig. 1 below.

(i) Q

ra

(ii) Q

is based on a 150µs integration time.

rr

i.e.

=

.)(max

150

RWT and fEW

()

−

Fig. 1

s

µ

dtiQ

.

rrrr

∫

0

HsJthAVSINKPAV

1

t

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s)

f = Rated frequency (in Hz) at the original heat sink temperature

R

Data Sheet. Type R1271NC12x Issue 2 Page 4 of 12 August 2012

= D.C. thermal resistance (°C/W)

th(J-Hs

FactorK =

−=

)()(

2

t

RfkETT

()

−

HsJthoriginalSINKnewSINK

Distributed gate thyristor R1271NC12x

⋅

(

⋅

⋅

r

The total dissipation is now given by:

(original)(TOT)

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

() ( )

Where T
T

SINK (original)

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:

SINK (new)

is the required maximum heat sink temperature and

is the heat sink temperature given with the frequency ratings.

) of 67% of the maximum grade. If a different grade is being used or Vrm is other than

rm

+=

−=

fEWW

)

fRETT

thoriginalSINKnewSINK

2

R

Where: V
C
R = Snubber resistance

13.0 Gate Drive

The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the necessary charge to
trigger the device.

Data Sheet. Type R1271NC12x Issue 2 Page 5 of 12 August 2012

V

⋅= 4

S

r

di

C

⋅

dt

S

= Commutating source voltage

= Snubber capacitance

Distributed gate thyristor R1271NC12x

(

p

p

14.0 Computer Modelling Parameters

14.1 Calculating V

The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

using ABCD Coefficients

T

vs. VT, on page 7 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

given below:

T

in

T

)

The constants, derived by curve fitting software, are given in this report for hot characteristics where
possible. The resulting values for V
is limited to that plotted.

14.2 D.C. Thermal Impedance Calculation

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

= Thermal resistance at time t.

r

t

r

= Amplitude of pth term.

= Time Constant of r

τ

Term 1 2 3 4 5

rp

τ

p

Term 1 2 3 4 5 6

rp

τ

p

0.01249139 6.316833×10-3 1.850855×10-3 1.922045×10-3 6.135330×10-4

0.8840810 0.1215195 0.03400152 6.742908×10-3 1.326292×10-3

0.02919832

6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10

4.863568×10

agree with the true device characteristic over a current range, which

T

125°C Coefficients

A 1.520747638
B 8.42314×10-3
C 2.47082×10-4
D -1.30505×10-3

−

t

⎞

τ

p

⎟

err

−⋅=
⎟

⎠

6.818034×10

3

3

=

np

∑

pt

=

p

1

term.

th

D.C. Double Side Cooled

D.C. Single Side Cooled

-

3.744798×10

⎛
⎜

1

⎜
⎝

-3

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-

2.183558×10

-

3

1.848294×10

-3

-3

Data Sheet. Type R1271NC12x Issue 2 Page 6 of 12 August 2012

Distributed gate thyristor R1271NC12x

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

(A)

T

10000

Tj = 125°C

0.1

SSC 0.048K/W

DSC 0.024K/W

0.01

(K/W)

(th)t

1000

Instantaneous on-state current - I

R1271NS10x-12x

R1271NC12x

Issue 2

100

01234

Instantaneous on-state voltage - V

Issue 1

(V)

T

Figure 3 - Gate characteristics - Trigger limits

6

R1271NC12x

R1271NS10x-12x

Issue 2

Issue 1

Tj=25°C

5

Max VG dc

GT

(V)

GT

4

IGT, V

0.001

Transient Thermal Impedance - Z

0.0001

R1271NC12x

R1271NS10x-12x

Issue 2

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Time (s)

Issue 1

Figure 4 - Gate characteristics - Power curves

20

R1271NC12x

R1271NS10x-12x

Issue 2

Issue 1

Tj=25°C

18

16

14

(V)

GT

12

Max VG dc

3

10

8

Gate Trigger Voltage - V

2

25°C

125°C

1

IGD, V

GD

0

0 0.25 0.5 0.75 1

Gate Trigger Current - I

Data Sheet. Type R1271NC12x Issue 2 Page 7 of 12 August 2012

-10°C

GT

-40°C

Min VG dc

(A)

Gate Trigger Voltage - V

6

4

PG 2W dc

2

0

0246810

Gate Trigger Current - I

PG Max 30W dc

Min VG dc

(A)

GT

Distributed gate thyristor R1271NC12x

r

r

Figure 5 - Total recovered charge, Q

10000

(µC)

rr

Figure 6 - Recovered charge, Qra (50% chord)

r

1000

2000A
1500A
1000A
500A

(µC)

ra

1000

2000A
1500A
1000A
500A

Total recovered charge - Q

Tj = 125°C
R1271NS10x-12x

R1271NC12x

Issue 2

Issue 1

100

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 7 - Peak reverse recovery current, Irm

1000

2000A
1500A
1000A
500A

100

Recovered charge - Q

10

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 8 - Maximum recovery time, t

10

Tj = 125°C
R1271NS10x-12x

R1271NC12x

Issue 2

Issue 1

(50% chord)

r

(µC)

rr

(µs)

rr

100

Total recovered charge - Q

Tj = 125°C
R1271NS10x-12x

R1271NC12x

Issue 1

10

10 100 1000

Commutation rate - di/dt (A/µs)

Issue 2

Reverse recovery time - t

2000A
1500A
1000A
500A

Tj = 125°C

R1271NS10x-12x

R1271NC12x

Issue 1

Issue 2

1

10 100 1000

Commutation rate - di/dt (A/µs)

Data Sheet. Type R1271NC12x Issue 2 Page 8 of 12 August 2012

Distributed gate thyristor R1271NC12x

A

A

Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse

1

1.00E+02

1.00E+01

R1271NC12x

R1271NS10x-12x

Issue 2

Issue 1

Tj=125°C

2000

(J)

r

1000

500A

0.1

250A

Energy per pulse - E

0.25µF,5
Tj = 125°C

Vrm = 67% V

R1271NC12x

R1271NS10x-12x

Issue 2

Issue 1

0.01
10 100 1000

Commutation rate - di/dt (A/µs)

Figure 11 - Sine wave frequency ratings

1.00E+05

500A

100% Duty Cycle

1kA

1.00E+04

R1271NC12x

R1271NS10x-12x

Issue 2

Issue 1

Snubber:

RRM

THs=55°C

5kA

1.00E+00
3kA

2kA

1.00E-01

Energy per pulse (J)

Ω

1.00E-02

1.00E-03

Figure 12 - Sine wave frequency ratings

1.00E+05

1.00E+04

1kA

500A

250A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

500A

1kA

100% Duty Cycle

2kA

3kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

5kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

2kA

3kA

5kA

THs=85°C

R1271NC12x

R1271NS10x-12x

Issue 2

Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Type R1271NC12x Issue 2 Page 9 of 12 August 2012

Distributed gate thyristor R1271NC12x

Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+04

500A

1kA

100% Duty Cycle

2kA

1.00E+05

1.00E+04

500A

1kA

100% Duty Cycle

3kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

5kA

THs=55°C
di/dt=100A/µs

R1271NC12x

R1271NS10x-12x

Issue 2

Issue 1

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

2kA

3kA

THs=55°C
di/dt=500A/µs

R1271NS10x-12x

R1271NC12x

Issue 1

Issue 2

5kA

Pulse width (s)

Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings

1.00E+05

1.00E+04

500A
1kA

100% Duty Cycle

1.00E+05

1.00E+04

250A

500A

1kA

100% Duty Cycle

2kA

3kA

1.00E+03

Frequency (Hz)

1.00E+02

THs=85°C
di/dt=100A/µs

R1271NS10x-12x

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Data Sheet. Type R1271NC12x Issue 2 Page 10 of 12 August 2012

5kA

R1271NC12x

Issue 2

Issue 1

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

2kA

3kA

5kA

THs=85°C
di/dt=500A/µs

R1271NS10x-12x

R1271NC12x

Issue 1

Issue 2

Pulse width (s)

Distributed gate thyristor R1271NC12x

Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse

1.00E+03
R1271NS10x-12x

R1271NC12x

Issue 2

Issue 1
di/dt=100A/µs
Tj=125°C

1.00E+03

R1271NC12x

R1271NS10x-12x

Issue 2

Issue 1

di/dt=500A/µs
Tj=125°C

1.00E+02

1.00E+01

5kA

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

3kA

2kA

1kA

500A

250A

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

Gate may temporarily lose control of conduction angle

100000

1.00E+02

5kA
3kA

1.00E+01

2kA

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1kA
500A
250A

1.00E+08

(A)

RRM

≤

10V

RRM

1.00E+07

s)

2

t (A

2

TSM

I2t: V

I2t: 60% V

10000

RRM

≤

10V

RRM

1.00E+06

1.00E+05

Maximum I

Total peak half sine surge current - I

1000

I

: V

TSM

I

: 60% V

TSM

Tj (initial) = 125°C

R1271NC12x

R1271NS10x-12x

Issue 2

Issue 1

1 3 5 10 1 5 10 50 100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Type R1271NC12x Issue 2 Page 11 of 12 August 2012

Distributed gate thyristor R1271NC12x

Outline Drawing & Ordering Information

101A223

ORDERING INFORMATION (Please quote 10 digit code as below)

R1271 NC

Fixed

Type Code

Typical order code: R1271NC12D – 1200V V

The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.

Fixed

Off-state Voltage Code

Outline Code

, 20µs tq, 27.7mm clamp height capsule.

DRM

♦ ♦ ♦

V

/100

DRM

12

t

Code (@ 200V/µs)

q

B=12µs, C=15µs, D=20µs,

E=25µs

© IXYS UK Westcode Ltd.

Data Sheet. Type R1271NC12x Issue 2 Page 12 of 12 August 2012