Datasheet R1158NS24#, R1158NS26# Datasheet (Westcode Semiconductors)

Distributed Gate Thyristor

Type R1158NS24# to R1158NS26#

(Old Type Number: D350CH20-26)

Absolute Maximum Ratings

Date:- 9 May, 2003

Data Sheet Issue:- 1

VOLTAGE RATINGS

V

DRM

V

DSM

V

RRM

V

RSM

Repetitive peak off-state voltage, (note 1) 2400-2600 V

Non-repetitive peak off-state voltage, (note 1) 2400-2600 V

Repetitive peak reverse voltage, (note 1) 2400-2600 V

Non-repetitive peak reverse voltage, (note 1) 2500-2700 V

OTHER RATINGS

I

T(AVM)

I

T(AVM)

I

T(AVM)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI

I2t

(di/dt)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Maximum average on-state current, T

Maximum average on-state current. T

Maximum average on-state current. T

Nominal RMS on-state current, T

D.C. on-state current, T

Peak non-repetitive surge tp=10ms, Vrm=0.6V

Peak non-repetitive surge tp=10ms, V

2

t capacity for fusing tp=10ms, Vrm=0.6V

2

t capacity for fusing tp=10ms, V

I

Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs

cr

Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 5 W

Peak forward gate power 30 W

Operating temperature range -40 to +125 °C

Storage temperature range -40 to +150 °C

MAXIMUM

LIMITS

MAXIMUM

LIMITS

=55°C, (note 2) 1158 A

sink

=85°C, (note 2) 769 A

sink

=85°C, (note 3) 445 A

sink

=25°C, (note 2) 2328 A

sink

=25°C, (note 4) 1920 A

sink

, (note 5) 14.5 kA

RRM

≤

10V, (note 5)

rm

RRM

≤

10V, (note 5)

rm

, (note 5) 1.05×10

16.0 kA

6

1.28×10

6

UNITS

UNITS

A2s

A2s

Notes:-

1)

De-rating factor of 0.13% per °C is applicable for Tj below 25°C.

2)

Double side cooled, single phase; 50Hz, 180° half-sinewave.

3)

Single side cooled, single phase; 50Hz, 180° half-sinewave.

4)

Double side cooled.

5)

Half-sinewave, 125°C Tj initial.

6)

VD=67% V

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 1 of 12 May, 2003

, IFG=2A, t

DRM

≤

0.5µs, T

r

case

=125°C.

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Characteristics

Distributed Gate Thyristor Types R1158NS24# to R1158NS26#

PARAMETER MIN. TYP. MAX. TEST CONDITIONS

V

TM

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 200 - - VD=80% V

I

DRM

I

RRM

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rm

t

rr

t

q

R

thJK

Maximum peak on-state voltage - - 2.40 ITM=2000A V

Maximum peak on-state voltage - - 2.95 ITM=3500A V

Threshold voltage - - 1.60 V

Slope resistance - - 0.40

Peak off-state current - - 100 Rated V

Peak reverse current - - 100 Rated V

Gate trigger voltage - - 3.0 V

T

Gate trigger current - - 300

Gate non-trigger voltage - - 0.25 Rated V

DRM

RRM

=25°C VD=10V, IT=3A

j

DRM

Holding current - - 1000 Tj=25°C mA

Gate controlled turn-on delay time - 0.7 1.5

Turn-on time - 1.5 3.0

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

Recovered charge - 1600 - µC

Recovered charge, 50% Chord - 900 1000 µC

Reverse recovery current - 240 - A

I

=1000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V

r

Reverse recovery time - 7.5 -

ITM=1000A, tp=1000µs, di/dt=60A/µs,
V

=50V, Vdr=33%V

r

ITM=1000A, tp=1000µs, di/dt=60A/µs,
V

=50V, Vdr=33%V

r

Turn-off time (note 2)

Thermal resistance, junction to heatsink

- - 100

100 - 120

- - 0.022 Double side cooled K/W

- - 0.044 Single side cooled K/W

(Note 1)

, Linear ramp, Gate o/c

DRM

, ITM=1000A, di/dt=60A/µs,

DRM

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

UNITS

m

V/µs

mA

mA

mA

V

µs

µs

µs

F Mounting force 19 - 26 kN

W

Weight - 510 - g

t

Ω

Notes:-

Unless otherwise indicated Tj=125°C.

1)

The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information

2)

for details of t

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 2 of 12 May, 2003

codes.

q

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Distributed Gate Thyristor Types R1158NS24# to R1158NS26#

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

24 2400 2500 1450
26 2600 2700 1550

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

.

GT

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 3 of 12 May, 2003

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9.0 Frequency Ratings

The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.

10.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

12.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

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Distributed Gate Thyristor Types R1158NS24# to R1158NS26#

=

1

max

f

++

ttt

vqpulse

13.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

be the Energy per pulse for a given current and pulse width, in joules

Let E

p

Let R
and T

Then the average dissipation will be:

14.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig. 1

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

125

.)(max

⋅−=⋅=

RWT and fEW

()

−

HsJthAVSINKPAV

Fig. 1

(ii) Qrr is based on a 150µs integration time i.e.

(iii)

FactorK

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 4 of 12 May, 2003

=

150

µ

s

dtiQ

.

rrrr

∫

0

t

1

=

t

2

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15.0 Reverse Recovery Loss

15.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:

The total dissipation is now given by:

15.2 Determination without Measurement

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)()(

Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R

= d.c. thermal resistance (°C/W).

th(J-Hs)

(original)(TOT)

⋅+=

fEWW

Distributed Gate Thyristor Types R1158NS24# to R1158NS26#

⋅+⋅−=

RfkETT

()

−

HsJthoriginalSINKnewSINK

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

() ( )

Where T
T

SINK (original)

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.

NOTE 1

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:

- Reverse Recovery Loss by Measurement

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:

SINK (new)

is the required maximum heat sink temperature and

is the heat sink temperature given with the frequency ratings.

) of 67% of the maximum grade. If a different grade is being used or Vrm is other than

rm

()

⋅⋅−=

fRETT

thoriginalSINKnewSINK

V

=

2

R

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 5 of 12 May, 2003

4

V

C

r

di

⋅

dt

S

Where:

⋅=

r

C

S

R

Commutating source voltage

=

Snubber capacitance

=

Snubber resistance

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p

p

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16.0 Computer Modelling Parameters

16.1 Calculating VT using ABCD Coefficients

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Distributed Gate Thyristor Types R1158NS24# to R1158NS26#

The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for V
which is limited to that plotted.

16.2 D.C. Thermal Impedance Calculation

given below:

T

vs VT, on page 7 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

()

ln

agree with the true device characteristic over a current range,

T

25°C Coefficients 125°C Coefficients

A 4.53492257

B -0.6479015

C -1.7639699×10

D 0.073346574

∑

p

-4

=

np

=

1

A 2.756692

B -0.2606278

C 2.0383540×10

D 0.02720498

−




1

pt




t



τ

p

−⋅=



err




in

T

⋅+⋅+⋅+=

IDICIBAV

TTTT

-4

Where

p = 1

Term12345

r

p

τ

p

Term1234

r

p

τ

p

n, n

to

t = Duration of heating pulse in seconds.

= Thermal resistance at time t.

r

t

r

= Amplitude of pth term.

τ

= Time Constant of rth term.

is the number of terms in the series.

D.C. Single Side Cooled

0.0291698 4.295845×10

5.67822 1.123602 0.1407857 0.014381914 1.272749×10

0.01177146 6.485814×10

0.9495346 0.1337950 0.01636628 1.255571×10

-3

7.57109×10

D.C. Double Side Cooled

-3

-3

2.195801×10

2.471007×10

-3

1.628753×10

-3

1.607109×10

-3

-3

-3

-3

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 6 of 12 May, 2003

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Distributed Gate Thyristor Types R1158NS24# to R1158NS26#

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

(A)

T

10000

1000

R1158NS24#-26#

Issue 1

Tj = 125°CTj = 25°C

(K/W)

0.01

(th)t

0.1

R1158NS24#-26#

Issue 1

SSC 0.044K/W

DSC 0.022K/W

Instantaneous on-state current - I

100

12345

Instantaneous on-state voltage - V

(V)

T

0.001

Transient Thermal Impedance - Z

0.0001

0.0001 0.001 0.01 0.1 1 10 100

Time (s)

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves

6

R1158NS24#-26#

Tj=25°C

5

4

(V)

GT

IGT, V

3

Issue 1

Max VG dc

GT

16

R1158NS24#-26#

Tj=25°C

14

12

(V)

10

GT

8

Issue 1

Max VG dc

`

6

Gate Trigger Voltage - V

2

25°C

125°C

1

IGD, V

GD

0

0 0.25 0.5 0.75 1

Gate Trigger Current - I

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 7 of 12 May, 2003

-10°C

GT

-40°C

Min VG dc

(A)

Gate Trigger Voltage - V

4

2

0

0246810

PG 5W dc

Gate Trigger Cur rent - I

PG Max 30W dc

Min VG dc

(A)

GT

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Distributed Gate Thyristor Types R1158NS24# to R1158NS26#

Figure 5 - Total recovered charge, Q

10000

(µC)

rr

Total recovered charge - Q

1000

10 100 1000

Commutation rate - di/dt (A/µs)

rr

R1158NS24#-26#

Issue 1

Tj = 125°C

2000A

1500A

1000A

500A

Figure 6 - Recovered charge, Qra (50% chord)

10000

(µC)

ra

1000

Recovered charge - Q

100

10 100 1000

Commutation rate - di/dt (A/µs)

R1158NS24#-26#

Issue 1

Tj = 125°C

2000A
1500A
1000A

500A

Figure 7 - Peak reverse recovery current, I

1000

(A)

rm

100

Reverse recovery current - I

10

10 100 1000

Commutation rate - di/dt (A/µs)

2000A
1500A
1000A
500A

Tj = 125°C

R1158NS24#-26#

Issue 1

rm

Figure 8 - Maximum recovery time, trr (50% chord)

100

(µs)

rr

10

Reverse recovery time - t

1

10 100 1000

Commutation rate - di/dt (A/µs)

R1158NS24#-26#

Issue 1

Tj = 125°C

2000A
1500A
1000A

500A

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 8 of 12 May, 2003

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Figure 9 – Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse

10000

(mJ)

r

R1158NS24#-26#

Issue 1

Tj = 125°C

Snubber: 0.5µF, 12

Vrm = 67% V

RRM

Ω

2000A

1500A

1000A

1.00E+03

1.00E+02

1.00E+01

R1158NS24#-26#

Issue 1

Tj=125°C

8kA

6kA

1000

Energy per pulse - E

R1158NS24#-26#

100

10 100 1000

Commutation rate - di/dt (A/µs)

Issue 1

500A

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

4kA

2kA

1kA

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings

1.00E+05

1.00E+04

500A

1kA

R1158NS24#-26#

100% Duty Cycle

Issue 1

TK=55°C

1.00E+05

1.00E+04

500A

1kA

R1158NS24#-26#

Issue 1

100% Duty Cycle

TK=85°C

2kA

1.00E+03

Frequency (Hz)

4kA

1.00E+02

1.00E+01

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 9 of 12 May, 2003

6kA

8kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

2kA

4kA

6kA

8kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

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Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+04

500A

1kA

R1158NS24#-26#

di/dt=100A/µs

100% Duty Cycle

Issue 1

TK=55°C

1.00E+05

1.00E+04

500A

R1158NS24#-26#

Issue 1

di/dt=500A/µs

TK=55°C

100% Duty Cycle

2kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

4kA

6kA

8kA

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1kA

2kA

6kA4kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings

1.00E+05

1.00E+04

1kA

2kA

R1158NS24#-26#

di/dt=100A/µs

100% Duty Cycle

Issue 1

THs=85°C

1.00E+05

1.00E+04

1.00E+03

1kA

2kA

R1158NS24#-26#

Issue 1

di/dt=500A/µs

100% Duty Cycle

THs=85°C

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 10 of 12 May, 2003

4kA

6kA

8kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

4kA

6kA 8kA

Pulse width (s)

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Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse

1.00E+03

1.00E+02

1.00E+01

R1158NS24#-26#

Issue 1

di/dt=100A/µs

Tj=125°C

6kA

8kA

1.00E+03

1.00E+02

R1158NS24#-26#

Issue 1

di/dt=500A/µs

Tj=125°C

8kA
6kA
4kA

4kA

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

2kA

1kA

500A

250A

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

Gate may temporarily lose control of conduction angle

100000

R1158NS24#-26#

Issue 1

(A)

TSM

Tj (initial) = 125°C

1.00E+01

Energy per pulse (J)

1.00E+00

1.00E-01

RRM

≤

I2t: V

2kA
1kA
500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+07

10V

I2t: 60% V

RRM

2

2

10000

I

I

TSM

TSM

: V

RRM

: 60% V

≤

10V

1.00E+06

RRM

Total peak half sine surge current - I

1000

1.00E+05

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 11 of 12 May, 2003

s)

t (A

Maximum I

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Outline Drawing & Ordering Information

Distributed Gate Thyristor Types R1158NS24# to R1158NS26#

ORDERING INFORMATION

R1158 NS

Fixed

Type Code

Typical order code: R1158NS24P – 2400V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara CA 95054 USA
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.

Fixed

Outline Code

, 120µs tq, 27.7mm clamp height capsule.

DRM

www.westcode.com

www.ixys.com

(Please quote 10 digit code as below)

♦ ♦

♦ ♦ ####

♦ ♦♦ ♦

Fixed Voltage Code

V

DRM

/100

24-26

Code

t

q

N = 100µs, P = 120µs

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: WSL.sales@westcode,com

E-mail: [e-mail]

Tel: [phone]

Fax: [phone]

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: [phone]

Fax: [phone]

© Westcode Semiconductors Ltd.

Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 12 of 12 May, 2003