Datasheet R0990LC08x Datasheet (Westcode Semiconductors)

Date:- 01 August 2012

3

3

Data Sheet Issue:- 3

Distributed Gate Thyristor

Type R0990LC08x

(Old Type Number: R270CH04-08)

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 800 V
Non-repetitive peak off-state voltage, (note 1) 900 V
Repetitive peak reverse voltage, (note 1) 800 V
Non-repetitive peak reverse voltage, (note 1) 900 V

OTHER RATINGS

I

Maximum average on-state current, T

T(AV)M

I

Maximum average on-state current. T

T(AV)M

I

Maximum average on-state current. T

T(AV)M

I

Nominal RMS on-state current, T

T(RMS)

I

D.C. on-state current, T

T(d.c.)

I

Peak non-repetitive surge tp=10ms, Vrm=60%V

TSM

I

TSM2

Peak non-repetitive surge t

=25°C, (note 4)

sink

=10ms, Vrm≤10V, (note 5)

p

I2t I2t capacity for fusing tp=10ms, Vrm=60%V
I2t

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

=55°C, (note 2)

sink

=85°C, (note 2)

sink

=85°C, (note 3)

sink

=25°C, (note 2)

sink

RRM

, (note 5)

RRM

, (note 5)

Maximum rate of rise of on-state current (repetitive), (note 6) 1000

(di/dt)cr

Maximum rate of rise of on-state current (non-repetitive), (note 6) 1500

V

Peak reverse gate voltage

RGM

P

Mean forward gate power

G(AV)

PGM Peak forward gate power
T

Operating temperature range -40 to +125 °C

j op

T

Storage temperature range -40 to +150 °C

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

initial.

j

=125°C.

case

below 25°C.

j

MAXIMUM

LIMITS

MAXIMUM

LIMITS

990
652

373
2001
1627

11000

12000
605×10
720×10

5
2

30

UNITS

UNITS

A
A
A
A
A
A
A

2

A

s

2

A

s

A/µs

V
W
W

Data Sheet. Type R0990LC08x Issue 3 Page 1 of 12 August 2012

Distributed Gate Thyristor Type R0990LC08x

r

r

r

r

r

r

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

VTM Maximum peak on-state voltage - - 1.84 ITM=1400A V
VT0 Threshold voltage - - 1.35 V
rT Slope resistance - - 0.35
(dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V
I

Peak off-state current - - 70 Rated V

DRM

I

Peak reverse current - - 70 Rated V

RRM

VGT Gate trigger voltage - - 3.0
IGT Gate trigger current - - 300 mA

=25°C VD=10V, IT=3A

T

j

VGD Gate non-trigger voltage - - 0.25 Rated V

, Linear ramp, Gate o/c

DRM

mA

DRM

mA

RRM

V

DRM

IH Holding current - - 1000 Tj=25°C mA
tgd Gate controlled turn-on delay time 0.4 1.0
tgt Turn-on time - 1.0 2.0

V

=67% V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, ITM=1500A, di/dt=60A/µs,

DRM

Qrr Recovered charge - 90 105
Qra Recovered charge, 50% Chord - 40 - µC
Irm Reverse recovery current - 55 - A
t

rr

Reverse recovery time - 1.55 - µs

- 10 -

tq Turn-off time (note 2)

- 12 -

R

thJK

Thermal resistance, junction to heatsink
(note 3)

- - 0.032 Double side cooled K/W

- - 0.064 Single side cooled K/W

I

=1000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V

r

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, V

=1000A, tp=1000µs, di/dt=60A/µs,

II

TM

V

=50V, V

=33%V

d

=33%V

d

DRM

DRM

, dV

/dt=20V/µs

d

, dV

/dt=200V/µs

d

F Mounting force 10 - 20 kN
Wt Weight - 340 - Outline option LC g

mΩ

V/µs

V

µs

µC

µs

Notes:-

1) Unless otherwise indicated T

2) The required t

(specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering

q

information for details of t

3) For other clamp forces, please consult factory

Data Sheet. Type R0990LC08x Issue 3 Page 2 of 12 August 2012

=125°C.

j

codes.

q

Distributed Gate Thyristor Type R0990LC08x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM

V

V

RRM

V

V

RSM

V

VD

DC V

VR

DC V

08 800 800 900 900 530

2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time
This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

.

GT

Data Sheet. Type R0990LC08x Issue 3 Page 3 of 12 August 2012

Distributed Gate Thyristor Type R0990LC08x

(

⋅−=

9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum

ratings shown on page 1.

10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t

) and for the off-state voltage to reach full value (tv), i.e.

q

f

13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.
Let E

Let R
and T

Then the average dissipation will be:

max

=

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

thJK

be the heat sink temperature.

K

1

vqpulse ttt

++

⋅= 125 and

14.0 Reverse recovery ratings
is based on 50% Irm chord as shown in Fig. 1

(i) Q

ra

(ii) Qrr is based on a 150µs integration time i.e.

(iii)

.)(max

RWTfEW

)

thJKAVKPAV

Fig. 1

150

=

FactorK =

s

µ

dtiQ

.

rrrr

∫

0

t

1

t

2

Data Sheet. Type R0990LC08x Issue 3 Page 4 of 12 August 2012

Distributed Gate Thyristor Type R0990LC08x

⋅

+

⋅

⋅

15.0 Reverse Recovery Loss

15.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:

()

)()(

Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R

The total dissipation is now given by:

= d.c. thermal resistance (°C/W).

thJK

(original)(TOT)

15.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

() ( )

Where T
T

K (original)

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge, care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:

2

R

V

r

⋅= 4

di

C

⋅

S

is the required maximum heat sink temperature and

K (new)

is the heat sink temperature given with the frequency ratings.

) of 67% of the maximum grade. If a different grade is being used or Vrm is other than

rm

Where:

dt

⋅−=

+=

()

⋅−=

thoriginalKnewK

V

r

C

S

R

RfkETT

thJKoriginalKnewK

fEWW

fRETT

=

Commutating source voltage

=

Snubber capacitance

=

Snubber resistance

Data Sheet. Type R0990LC08x Issue 3 Page 5 of 12 August 2012

Distributed Gate Thyristor Type R0990LC08x

(

p

p

16.0 Computer Modelling Parameters

16.1 Calculating V

The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

using ABCD Coefficients

T

vs VT, on page 7 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

given below:

T

T

in

)

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for V
which is limited to that plotted.

16.2 D.C. Thermal Impedance Calculation

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

= Thermal resistance at time t.

r

t

r

= Amplitude of pth term.

= Time Constant of r

τ

Term 1 2 3 4

rp

τ

p

Term 1 2 3 4 5

rp

τ

p

0.01771901 4.240625×10

0.7085781 0.1435833 0.03615196 2.130842×10

0.03947164 0.01022837 8.789912×10

4.090062 1.078983 0.08530917 0.01128791 1.240861×10

term.

th

agree with the true device characteristic over a current range,

T

125°C Coefficients

A 3.0403257
B -0.4165914
C -3.5756×10-5
D 0.04991413

−

=

np

⎛
⎜

∑

=

p

1

D.C. Double Side Cooled

D.C. Single Side Cooled

1

pt

⎜
⎝

-3

6.963806×10-3 3.043661×10-3

t

⎞

τ

p

⎟

err

−⋅=
⎟

⎠

-3

4.235162×10-3 1.907609×10-3

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-3

-3

Data Sheet. Type R0990LC08x Issue 3 Page 6 of 12 August 2012

Distributed Gate Thyristor Type R0990LC08x

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

10000

0.1
SSC 0.064K/W

DSC 0.032K/W

Tj = 125°C

(A)

T

1000

Instantaneous on-state current - I

R0990LC08x

R0990LS04x-08x

Issue 3

100

00.511.522.53

Instantaneous on-state voltage - V

Issue 2

(V)

T

Figure 3 - Gate characteristics - Trigger limits

6

R0990LC08x

R0990LS04x-08x

Issue 3

Issue 2

Tj=25°C

5

0.01

(K/W)

(th)t

0.001

Transient Thermal Impedance - Z

0.0001

R0990LC08x

R0990LS04x-08x

Issue 3

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Figure 4 - Gate characteristics - Power curves

20

R0990LS04x-08x

R0990LC08x

Issue 3

Issue 2

18

Tj=25°C

16

Time (s)

Issue 2

4

(V)

GT

IGT, V

3

Max VG dc

GT

14

(V)

GT

12

10

Max VG dc

8

Gate Trigger Voltage - V

2

25°C

-10°C

1

IGD, V

GD

0

0 0.2 0.4 0.6 0.8 1

125°C

Gate Trigger Current - I

-40°C

GT

Min VG dc

(A)

Gate Trigger Voltage - V

6

4

PG 2W dc

2

0

0246810

Gate Trigger Current - I

PG Max 30W dc

Min VG dc

(A)

GT

Data Sheet. Type R0990LC08x Issue 3 Page 7 of 12 August 2012

Distributed Gate Thyristor Type R0990LC08x

r

Figure 5 - Total recovered charge, Q

1000

(µC)

rr

100

Total recovered charge - Q

10

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 6 - Recovered charge, Qra (50% chord)

r

1000

2000A
1500A

1000A

500A

(µC)

ra

100

2000A
1500A
1000A
500A

Recovered charge - Q

Tj = 125°C

R0990LS04x-08x

R0990LC08x

Issue 3

Issue 2

10

10 100 1000

Commutation rate - di/dt (A/µs)

Tj = 125°C

R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

Figure 7 - Peak reverse recovery current, Irm

1000

2000A
1500A
1000A

(A)

RM

100

Reverse recovery current - I

10

10 100 1000

Commutation rate - di/dt (A/µs)

500A

Tj = 125°C

R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

Figure 8 - Maximum recovery time, t
chord)

10

(µs)

rr

Reverse recovery time - t

1

10 100 1000

Commutation rate - di/dt (A/µs)

rr

2000A
1500A
1000A

500A

Tj = 125°C

R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

(50%

Data Sheet. Type R0990LC08x Issue 3 Page 8 of 12 August 2012

Distributed Gate Thyristor Type R0990LC08x

Figure 9 – Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse

100

1500A

1000A

1.00E+02

1.00E+01

R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

Tj=125°C

(mJ)

r

800A

500A

Energy per pulse - E

0.25µF, 4.7
Tj = 125°C

V

R0990LS04x-08x

R0990LC08x

Issue 2

10

Issue 3

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 11 - Sine wave frequency ratings

1.00E+05

1.00E+04

500A

100% Duty Cycle

1kA

1.5kA

2kA

R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

Snubber

= 200V

r

THs=55°C

4kA

1.00E+00

Energy per pulse (J)

1.00E-01

Ω

1.00E-02

Figure 12 - Sine wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

2kA

1.5kA

1kA

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

500A

1kA

1.5kA

2kA

100% Duty Cycle

1.00E+03
4kA

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

4kA

THs=85°C
R0990LS04x-08x

R0990LC08x

Issue 3

Issue 2

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Type R0990LC08x Issue 3 Page 9 of 12 August 2012

Distributed Gate Thyristor Type R0990LC08x

Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+05

1.00E+04

1kA

1.5kA
2kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

4kA

THs=55°C
di/dt=100A/µs

R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

100% Duty Cycle

Pulse width (s)

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

500A

2kA

1.5kA
1kA

4kA

THs=55°C
di/dt=500A/µs

R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

1.00E-05 1.00E-04 1.00E-03 1.00E-02

100% Duty Cycle

Pulse width (s)

Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings

1.00E+05

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

500A

1kA

1.5kA

2kA

4kA

THs=85°C
di/dt=100A/µs

R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

1.00E-05 1.00E-04 1.00E-03 1.00E-02

100% Duty Cycle

Pulse width (s)

1.00E+04

1.00E+03

500A

1kA

1.5kA
2kA

100% Duty Cycle

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

4kA

THs=85°C
di/dt=500A/µs
R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Type R0990LC08x Issue 3 Page 10 of 12 August 2012

Distributed Gate Thyristor Type R0990LC08x

Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse

1.00E+03
R0990LS04x-08x

R0990LC08x

Issue 3

Issue 2
di/dt=100A/µs
Tj=125°C

1.00E+03
R0990LS04x-08x

R0990LC08x

Issue 2

Issue 3

di/dt=500A/µs
Tj=125°C

1.00E+02

1.00E+01

4kA

1.00E+00

Energy per pulse (J)

2kA

1.5kA

1.00E-01

1.00E-02

1kA

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

100000

(A)

TSM

R0990LS04x-08x

Tj (initial) = 125°C

R0990LC08x

Issue 3

Issue 2

Gate may temporarily lose control of conduction angle

1.00E+02

4kA
2kA

1.00E+01

1.5kA

1.00E+00

Energy per pulse (J)

1kA
500A

1.00E-01

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+07

RRM

≤

10V

RRM

I2t: V

I2t: 60% V

s)

2

t (A

2

10000

I

TSM

I

TSM

: V

RRM

: 60% V

≤

10V

1.00E+06

Maximum I

RRM

Total peak half sine surge current - I

1000

1.00E+05

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Type R0990LC08x Issue 3 Page 11 of 12 August 2012

Outline Drawing & Ordering Information

Distributed Gate Thyristor Type R0990LC08x

101A216

ORDERING INFORMATION (Please quote 10 digit code as below)

R0990 LC

Fixed

Type Code

Typical order code: R0990LC08B – 600V V

Outline option LC

Outline Code

LC=27mm height,

, 800V V

DRM

RRM

♦ ♦ ♦

Fixed Voltage Code

V

/100

12µs tq, 27mm clamp height capsule.

DRM

08

t

Code

q

A=10µs, B=12µs,

C = 15µs

The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.

© IXYS UK Westcode Ltd.

Data Sheet. Type R0990LC08x Issue 3 Page 12 of 12 August 2012