Datasheet R0633YC10x, R0633YC12x Datasheet (Westcode Semiconductors)

Date:- 14 Jul, 2015 Data Sheet Issue:- 4

Distributed Gate Thyristor

Types R0633YC10x to R0633YC12x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200 V Non-repetitive peak off-state voltage, (note 1) 1200 V Repetitive peak reverse voltage, (note 1) 1200 V Non-repetitive peak reverse voltage, (note 1) 1300 V

OTHER RATINGS

I

T(AV)

I

T(AV)

I

T(AV)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, VRM=0.6V I2t

diT/dt

V

RGM

P

G(AV)

P

GM

V

GD

T

HS

T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

7) Rated V

Mean on-state current, T Mean on-state current. T Mean on-state current. T Nominal RMS on-state current, T D.C. on-state current, T Peak non-repetitive surge tp=10ms, VRM=0.6V

=55°C, (note 2) 633 A

sink

=85°C, (note 2) 423 A

sink

=85°C, (note 3) 246 A

sink

=25°C, (note 2) 1268 A

sink

=25°C, (note 4) 1054 A

sink

, (note 5) 6.3 kA

RRM

Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

, (note 5) 200×10

RRM

2

I

t capacity for fusing tp=10ms, VRM≤10V, (note 5) Maximum rate of rise of on-state current (repetitive), (Note 6) 500 A/µs Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs Peak reverse gate voltage 5 V Mean forward gate power 2 W Peak forward gate power 30 W Non-trigger gate voltage, (Note 7) 0.25 V Operating temperature range -40 to +125 °C Storage temperature range -40 to +150 °C

below 25°C.

j

initial.

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

.

DRM

j

=125°C.

case

Data Sheet. Type R0633YC12x Issue 4 Page 1 of 12 July, 2015

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

6.9 kA

240×10

3

A2s A2s

Distributed Gate Thyristor R0633YC12x

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V V r dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V I I V I I Q Q I t

t

R

Maximum peak on-state voltage - - 1.85 ITM=1000A V

TM

Threshold voltage - - 1.25 V

0

Slope resistance - - 0.614

S

, linear ramp

DRM

Peak off-state current - - 60 Rated V

DRM

Peak reverse current - - 60 Rated V

RRM

Gate trigger voltage - - 3.0 Tj=25°C V

GT

Gate trigger current - - 200 Tj=25°C VD=10V, IT=3A mA

GT

Holding current - - 1000 Tj=25°C mA

H

Recovered charge - 125 - µC

rr

Recovered charge, 50% Chord - 85 100 µC

ra

Reverse recovery current - 65 - A

rm

Reverse recovery time - 2.25 -

rr

- - 28

Turn-off time

q

20 - 30

Thermal resistance, junction to heatsink

th(j-hs)

- - 0.050 Double side cooled K/W

- - 0.10 Single side cooled K/W

I

I V I V

DRM

RRM

=550A, tp=500µs, di/dt=40A/µs, Vr=50V

TM

=550A, tp=500µs, di/dt=40A/µs, Vr=50V,

TM

=80%V

dr

=550A, tp=500µs, di/dt=40A/µs, Vr=50V,

TM

=80%V

dr

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

mΩ

V/µs

mA mA

µs

F Mounting force 5.5 - 10 kN W

Weight - 90 - g

t

Notes:-

1) Unless otherwise indicated T

2)

The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for details of t

codes.

q

=125°C.

j

Introduction

The R0633 Distributed Gate thyristor has fast switching characteristics provided by a regenerative, interdigitated gate. It also exhibits low switching losses and is therefore suitable for medium current, medium frequency applications.

Data Sheet. Type R0633YC12x Issue 4 Page 2 of 12 July, 2015

Distributed Gate Thyristor R0633YC12x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

RSM

V

D

DC V

R

12 1200 1300 810

2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25oC.

j

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

f

max

=

1

vqpulse ttt

++

Data Sheet. Type R0633YC12x Issue 4 Page 3 of 12 July, 2015

Distributed Gate Thyristor R0633YC12x

(

)

⋅−=

(

)

⋅+⋅

10.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings. Let E

Let R and T

Then the average dissipation will be:

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

⋅= 125

11.0 Reverse recovery ratings (i) Q

is based on 50% Irm chord as shown in Fig. 1 below.

ra

(ii) Q

is based on a 150µs integration time.

rr

i.e.

=

.)(max

150

RWT and fEW

()

Fig. 1

s

µ

dtiQ

.

rrrr

∫

0

HsJthAVSINKPAV

−

1

t

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from:

where k = 0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature. R

Data Sheet. Type R0633YC12x Issue 4 Page 4 of 12 July, 2015

= d.c. thermal resistance (°C/W).

th(J-Hs)

FactorK =

−=

)()(

2

t

RfkETT

()

−

HsJthoriginalSINKnewSINK

Distributed Gate Thyristor R0633YC12x

⋅

(

⋅

The total dissipation is now given by:

(original)(TOT)

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz

() ( )

Where T T

SINK (original)

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (V 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below:

SINK (new)

is the required maximum heat sink temperature and

is the heat sink temperature given with the frequency ratings.

) of 67% of the maximum grade. If a different grade is being used or Vrm is other than

rm

+=

−=

fEWW

)

fRETT

thoriginalSINKnewSINK

2

R

Where: V C R = Snubber resistance

13.0 Gate Drive

The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in charge to trigger.

Data Sheet. Type R0633YC12x Issue 4 Page 5 of 12 July, 2015

V

⋅= 4

r S

r

di

C

⋅

dt

S

= Commutating source voltage = Snubber capacitance

Distributed Gate Thyristor R0633YC12x

(

14.0 Computer Modelling Parameters

14.1 Calculating V

The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

using ABCD Coefficients

T

vs VT, on page 7 is represented in two ways;

T

and rs tangent used for rating purposes and

o

given below:

T

in

T

)

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics where possible. The resulting values for V which is limited to that plotted.

25°C Coefficients 125°C Coefficients

A 1.806168 A 2.770221 B 0.0343271 B -0.3652107 C 7.9919×10-4 C 3.8581×10-4 D -0.0267678 D 0.03847728

14.2 D.C. Thermal Impedance Calculation

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

= Thermal resistance at time t.

r

t

r

= Amplitude of pth term.

p

= Time Constant of rth term.

τ

p

Term 1 2 3 4

r

p

τ

p

Term 1 2 3 4 5

r

p

τ

p

0.0200056 9.923438×10

0.3391689 0.1269073 0.03562131 2.562946×10

0.06157697 8.431182×10

2.136132 1.212898 0.1512408 0.04244 2.889595×10

agree with the true device characteristic over a current range,

T

−

=

np

⎛ ⎜

∑

=

p

1

D.C. Double Side Cooled

D.C. Single Side Cooled

1

pt

⎜ ⎝

-3

0.01031315 0.01613806 5.181088×10

t

⎞

τ

p

⎟

err

−⋅= ⎟

⎠

-3

0.01433715 4.284403×10

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-3

Data Sheet. Type R0633YC12x Issue 4 Page 6 of 12 July, 2015

Distributed Gate Thyristor R0633YC12x

x

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

10000

1

(A)

T

1000

Instantaneous on-state current - I

Tj = 125°C

100

0123

Instantaneous on-state voltage - V

Tj = 25°C

R0633YC12

Issue 4

(V)

T

Figure 3 - Gate characteristics - Trigger limits

6

R0633YC12x

Issue 4

Tj=25°C

4

Figure 4 - Gate characteristics - Power curves

0.1

(K/W)

(th)t

0.01

Transient Thermal Impedance - Z

0.001

0.0001

0.0001 0.001 0.01 0.1 1 10 100

Time (s)

SSC 0.1K/W

DSC 0.05K/W

R0633YC12x

20

R0633YC12x

Issue 4

Tj=25°C

18

Issue 4

5

4

(V)

GT

IGT, V

3

Max VG dc

GT

16

14

(V)

GT

12

10

Max VG dc

8

Gate Trigger Voltage - V

2

25°C

-10°C

125°C

1

IGD, V

GD

0

00.20.40.60.8

Gate Trigger Current - IGT (A)

-40°C

Min VG dc

1

Data Sheet. Type R0633YC12x Issue 4 Page 7 of 12 July, 2015

Gate Trigger Voltage - V

6

4

PG 2W dc

2

0

02468

Gate Trigger Current - IGT (A)

PG Max 30W dc

Min VG dc

10

Distributed Gate Thyristor R0633YC12x

A

Figure 5 - Total recovered charge, Q

1000

rr

Figure 6 - Recovered charge, Qra (50% chord) Figure 6 - Recovered charge, Q

(50% chord)

ra

1000

(µC)

rr

100

Total recovered charge - Q

10

10 100 1000

Commutation rate - di/dt (A/µs)

2000 1500 1000

500

Tj = 125°C

R0633YC12x

Issue 4

2000 1500 1000 500A

(µC)

ra

100

Recovered charge - Q

Tj = 125°C

R0633YC12x

Issue 4

10

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 7 - Peak reverse recovery current, I

1000

2000 1500 1000 500A

(A)

rm

100

Reverse recovery current - I

Tj = 125°C

R0633YC12x

10

Issue 4

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 8 - Maximum recovery time, t

rm

(50% chord)

rr

10

(µs)

rr

Reverse recovery time - t

1

10 100 1000

Commutation rate - di/dt (A/µs)

2000A 1500A 1000A 500A

Tj = 125°C

R0633YC12x

Issue 4

Data Sheet. Type R0633YC12x Issue 4 Page 8 of 12 July, 2015

Distributed Gate Thyristor R0633YC12x

Ω

A2kA

A1kA

A

x

Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse

0.10

2000A

1000A

(J)

r

750A

1.00E+02

1.00E+01

1.00E+00

R0633YC12x

Issue 4

Tj=125°C

3k

Energy per pulse - E

Snubber Value

with 0.22µF, 5

Tj = 125°C

= 67% V

V

rm

R0633YC12x

0.01

1.00E+00 1.00E+01 1.00E+02 1.00E+03

Issue 4

Commutation rate - di/dt (A/µs)

Figure 11 - Sine wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

500A

1kA

1.5kA

2kA

3kA

100% Duty Cycle

R0633YC12x

400A

Issue 4

THs=55°C

RRM

Energy per pulse (J)

1.00E-01

1.00E-02

1.5k

500

250

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 12 - Sine wave frequency ratings

1.00E+05

100% Duty Cycle

1.00E+04

1.00E+03

Frequency (Hz)

250A

500A

1kA

1.5kA

2kA

3kA

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

1.00E+02

THs=85°C

R0633YC12

1.00E+01

Issue 4

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Type R0633YC12x Issue 4 Page 9 of 12 July, 2015

Distributed Gate Thyristor R0633YC12x

x

A

x

Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

250A

100% Duty Cycle

1kA

500A

1.5kA 2kA

3kA

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

250A

500A

1kA

1.5kA

2kA

3kA

100% Duty Cycle

1.00E+01

THs=55°C di/dt=100A/µs R0633YC12

1.00E+00

Issue 4

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+01

THs=55°C di/dt=500A/µs

R0633YC12x

1.00E+00

Issue 4

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

250A

500A

1kA

1.5k

2kA

100% Duty Cycle

3kA

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

250

500A

1kA

1.5kA

2kA

3kA

R0633YC12

Issue 4

di/dt=500A/µs

THs=85°C

100% Duty Cycle

1.00E+02

1.00E+01

THs=85°C di/dt=100A/µs

R0633YC12

1.00E+01

Data Sheet. Type R0633YC12x Issue 4 Page 10 of 12 July, 2015

Issue 4

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Distributed Gate Thyristor R0633YC12x

x

Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse

1.00E+02

1.00E+01

R0633YC12x

Issue 4

di/dt=100A/µs Tj=125°C

3kA

1.00E+02

1.00E+01

R0633YC12

Issue 4

di/dt=500A/µs Tj=125°C

3kA 2kA

1.5kA

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

2kA

1.5kA

1kA

500A

250A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

Gate may temporarily lose control of conduction angle

100000

(A)

TSM

R0633YC12x

Issue 4

Tj (initial) = 125°C

Energy per pulse (J)

1.00E+00

1kA

1.00E-01

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

500A 250A

1.00E+07

10000

I2t: V

I2t: 60% V

RRM

≤10V

RRM

1.00E+06

2

s) t (A

Maximum I

I

: V

RRM

≤10V

TSM

Total peak half sine surge current - I

I

: 60% V

1000

13510

15

10 50 100

TSM

RRM

1.00E+05

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Type R0633YC12x Issue 4 Page 11 of 12 July, 2015

Distributed Gate Thyristor R0633YC12x

Outline Drawing & Ordering Information

W58 – 101A237

ORDERING INFORMATION (Please quote 10 digit code as below)

R 0633 YC 12

Fixed

Type Code

Typical order code: R0633YC12D – 1.2kV V

Fixed

Outline Code

Fixed

Off-State Voltage Code

Outline code

, 20µs tq, 15.1mm clamp height capsule.

DRM

V

/100

DRM

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.

♦

Code

t

D=20µs, E=25µs, F=30µs

q

Data Sheet. Type R0633YC12x Issue 4 Page 12 of 12 July, 2015