Repetitive peak off-state voltage, (note 1) 1200 V
Non-repetitive peak off-state voltage, (note 1) 1200 V
Repetitive peak reverse voltage, (note 1) 1200 V
Non-repetitive peak reverse voltage, (note 1) 1300 V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2t I2t capacity for fusing tp=10ms, VRM=0.6V
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
7) Rated V
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6) 500 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
below 25°C.
j
initial.
=67% V
D
, IFG=2A, tr≤0.5µs, T
DRM
.
DRM
j
=125°C.
case
Data Sheet. Type R0633YC12x Issue 4 Page 1 of12 July, 2015
MAXIMUM
LIMITS
MAXIMUM
LIMITS
UNITS
UNITS
6.9 kA
240×10
3
3
A2s
A2s
Page 2
Distributed Gate Thyristor R0633YC12x
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1)UNITS
V
V
r
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
I
V
I
I
Q
Q
I
t
t
R
Maximum peak on-state voltage - - 1.85 ITM=1000A V
TM
Threshold voltage - - 1.25 V
0
Slope resistance - - 0.614
S
, linear ramp
DRM
Peak off-state current - - 60 Rated V
DRM
Peak reverse current - - 60 Rated V
RRM
Gate trigger voltage - - 3.0 Tj=25°C V
GT
Gate trigger current - - 200 Tj=25°C VD=10V, IT=3A mA
GT
Holding current - - 1000 Tj=25°C mA
H
Recovered charge - 125 - µC
rr
Recovered charge, 50% Chord - 85 100 µC
ra
Reverse recovery current - 65 - A
rm
Reverse recovery time - 2.25 -
rr
- - 28
Turn-off time
q
20 - 30
Thermal resistance, junction to heatsink
th(j-hs)
- - 0.050 Double side cooled K/W
- - 0.10 Single side cooled K/W
I
I
V
I
V
DRM
RRM
=550A, tp=500µs, di/dt=40A/µs, Vr=50V
TM
=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
TM
=80%V
dr
=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
TM
=80%V
dr
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
mΩ
V/µs
mA
mA
µs
µs
F Mounting force 5.5 - 10 kN
W
Weight - 90 - g
t
Notes:-
1) Unless otherwise indicated T
2)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t
codes.
q
=125°C.
j
Introduction
The R0633 Distributed Gate thyristor has fast switching characteristics provided by a regenerative,
interdigitated gate. It also exhibits low switching losses and is therefore suitable for medium current,
medium frequency applications.
Data Sheet. Type R0633YC12x Issue 4 Page 2 of12 July, 2015
Page 3
Distributed Gate Thyristor R0633YC12x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
12 1200 1300 810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other t
/re-applied dv/dt combinations when supply has been agreed by
q
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
below 25oC.
j
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
f
max
=
1
vqpulsettt
++
Data Sheet. Type R0633YC12x Issue 4 Page 3 of12 July, 2015
Page 4
Distributed Gate Thyristor R0633YC12x
(
)
⋅−=
(
)
⋅+⋅
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let E
Let R
and T
Then the average dissipation will be:
be the Energy per pulse for a given current and pulse width, in joules
p
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
⋅=125
11.0 Reverse recovery ratings
(i) Q
is based on 50% Irm chord as shown in Fig. 1 below.
ra
(ii) Q
is based on a 150µs integration time.
rr
i.e.
=
.)(max
150
RWT and fEW
()
Fig. 1
s
µ
dtiQ
.
rrrr
∫
0
HsJthAVSINKPAV
−
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R
Data Sheet. Type R0633YC12x Issue 4 Page 4 of12 July, 2015
= d.c. thermal resistance (°C/W).
th(J-Hs)
FactorK=
−=
)()(
2
t
RfkETT
()
−
HsJthoriginalSINKnewSINK
Page 5
Distributed Gate Thyristor R0633YC12x
⋅
(
⋅
⋅
The total dissipation is now given by:
(original)(TOT)
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
()()
Where T
T
SINK (original)
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
SINK (new)
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
rm
+=
−=
fEWW
)
fRETT
thoriginalSINKnewSINK
2
R
Where: V
C
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Type R0633YC12x Issue 4 Page 5 of12 July, 2015
V
⋅= 4
r
S
r
di
C
⋅
dt
S
= Commutating source voltage
= Snubber capacitance
Page 6
Distributed Gate Thyristor R0633YC12x
(
14.0 Computer Modelling Parameters
14.1 Calculating V
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
using ABCD Coefficients
T
vs VT, on page 7 is represented in two ways;
T
and rs tangent used for rating purposes and
o
given below:
T
in
T
)
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for V
which is limited to that plotted.
25°C Coefficients 125°C Coefficients
A 1.806168 A 2.770221
B 0.0343271 B -0.3652107
C 7.9919×10-4 C 3.8581×10-4
D -0.0267678 D 0.03847728
14.2 D.C. Thermal Impedance Calculation
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
p
= Time Constant of rth term.
τ
p
Term 1 2 3 4
r
p
τ
p
Term 1 2 3 4 5
r
p
τ
p
0.0200056 9.923438×10
0.3391689 0.1269073 0.03562131 2.562946×10
0.06157697 8.431182×10
2.136132 1.212898 0.1512408 0.04244 2.889595×10
agree with the true device characteristic over a current range,
T
−
=
np
⎛
⎜
∑
=
p
1
D.C. Double Side Cooled
D.C. Single Side Cooled
1
pt
⎜
⎝
-3
0.01031315 0.01613806 5.181088×10
t
⎞
τ
p
⎟
err
−⋅=
⎟
⎠
-3
0.01433715 4.284403×10
IDICIBAV⋅+⋅+⋅+=ln
TTTT
-3
-3
-3
-3
Data Sheet. Type R0633YC12x Issue 4 Page 6 of12 July, 2015
Data Sheet. Type R0633YC12x Issue 4 Page 8 of12 July, 2015
Page 9
Distributed Gate Thyristor R0633YC12x
Ω
A2kA
A1kA
A
A
x
Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse
0.10
2000A
1000A
(J)
r
750A
1.00E+02
1.00E+01
1.00E+00
R0633YC12x
Issue 4
Tj=125°C
3k
Energy per pulse - E
Snubber Value
with 0.22µF, 5
Tj = 125°C
= 67% V
V
rm
R0633YC12x
0.01
1.00E+001.00E+011.00E+021.00E+03
Issue 4
Commutation rate - di/dt (A/µs)
Figure 11 - Sine wave frequency ratings
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
500A
1kA
1.5kA
2kA
3kA
100% Duty Cycle
R0633YC12x
400A
Issue 4
THs=55°C
RRM
Energy per pulse (J)
1.00E-01
1.00E-02
1.5k
500
250
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Figure 12 - Sine wave frequency ratings
1.00E+05
100% Duty Cycle
1.00E+04
1.00E+03
Frequency (Hz)
250A
500A
1kA
1.5kA
2kA
3kA
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
Pulse Width (s)
1.00E+02
THs=85°C
R0633YC12
1.00E+01
Issue 4
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Data Sheet. Type R0633YC12x Issue 4 Page 9 of12 July, 2015
Page 10
Distributed Gate Thyristor R0633YC12x
x
x
A
A
x
Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
250A
100% Duty Cycle
1kA
500A
1.5kA
2kA
3kA
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
250A
500A
1kA
1.5kA
2kA
3kA
100% Duty Cycle
1.00E+01
THs=55°C
di/dt=100A/µs
R0633YC12
1.00E+00
Issue 4
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+01
THs=55°C
di/dt=500A/µs
R0633YC12x
1.00E+00
Issue 4
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
250A
500A
1kA
1.5k
2kA
100% Duty Cycle
3kA
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
250
500A
1kA
1.5kA
2kA
3kA
R0633YC12
Issue 4
di/dt=500A/µs
THs=85°C
100% Duty Cycle
1.00E+02
1.00E+01
THs=85°C
di/dt=100A/µs
R0633YC12
1.00E+01
Data Sheet. Type R0633YC12x Issue 4 Page 10 of12 July, 2015
Issue 4
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+00
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Page 11
Distributed Gate Thyristor R0633YC12x
x
Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+02
1.00E+01
R0633YC12x
Issue 4
di/dt=100A/µs
Tj=125°C
3kA
1.00E+02
1.00E+01
R0633YC12
Issue 4
di/dt=500A/µs
Tj=125°C
3kA
2kA
1.5kA
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
2kA
1.5kA
1kA
500A
250A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
(A)
TSM
R0633YC12x
Issue 4
Tj (initial) = 125°C
Energy per pulse (J)
1.00E+00
1kA
1.00E-01
1.00E-02
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
500A
250A
1.00E+07
10000
I2t: V
I2t: 60% V
RRM
≤10V
RRM
1.00E+06
2
2
s)
t (A
Maximum I
I
: V
RRM
≤10V
TSM
Total peak half sine surge current - I
I
: 60% V
1000
13510
15
1050100
TSM
RRM
1.00E+05
Duration of surge (ms)Duration of surge (cycles @ 50Hz)
Data Sheet. Type R0633YC12x Issue 4 Page 11 of12 July, 2015
Page 12
Distributed Gate Thyristor R0633YC12x
Outline Drawing & Ordering Information
W58 – 101A237
ORDERING INFORMATION (Please quote 10 digit code as below)
R 0633 YC 12
Fixed
Type Code
Typical order code: R0633YC12D – 1.2kV V
Fixed
Outline Code
Fixed
Off-State Voltage Code
Outline code
, 20µs tq, 15.1mm clamp height capsule.
DRM
V
/100
DRM
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.