Page 1
Date:- 6 Nov, 2014
Data Sheet Issue:- 2
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
V
DRM
Repetitive peak off-state voltage, (note 1)
1200
V
V
DSM
Non-repetitive peak off-state voltage, (note 1)
1200
V
V
RRM
Repetitive peak reverse voltage, (note 1)
1200
V
V
RSM
Non-repetitive peak reverse voltage, (note 1)
1300
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
I
T(AV)
Mean on-state current, T
sink
=55°C, (note 2)
577
A
I
T(AV)
Mean on-state current. T
sink
=85°C, (note 2)
379
A
I
T(AV)
Mean on-state current. T
sink
=85°C, (note 3)
216
A
I
T(RMS)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
1169
A
I
T(d.c.)
D.C. on-state current, T
sink
=25°C, (note 4)
946
A
I
TSM
Peak non-repetitive surge tp=10ms, VRM=0.6V
RRM
, (note 5)
6.0
kA
I
TSM2
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
6.6
kA
I2t
I2t capacity for fusing tp=10ms, VRM=0.6V
RRM
, (note 5)
180
kA2s
I2t
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
218
kA2s
diT/dt
Maximum rate of rise of on-state current (repetitive), (Note 6)
1000
A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
1500
A/µs
V
RGM
Peak reverse gate voltage
5
V
P
G(AV)
Mean forward gate power
2
W
PGM
Peak forward gate power
30
W
VGD
Non-trigger gate voltage, (Note 7)
0.25
V
THS
Operating temperature range
-40 to +125
°C
T
stg
Storage temperature range
-40 to +150
°C
Distributed Gate Thyristor
Absolute Maximum Ratings
Type R0577YC12x
Notes: -
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
7) Rated V
, IFG=2A, tr0.5µs, T
DRM
.
DRM
initial.
j
=125°C.
case
Data Sheet. Type R0577YC12x Issue 2 Page 1 of 12 November, 2014
below 25°C.
j
Page 2
Distributed Gate Thyristor R0577YS12x
PARAMETER
MIN.
TYP.
MAX.
TEST CONDITIOYS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
- - 2.15
ITM=1000A
V
V0
Threshold voltage
- - 1.51 V
rs
Slope resistance
- - 0.64
m
dv/dt
Critical rate of rise of off-state voltage
200 - -
VD=80% V
DRM
, linear ramp
V/s
I
DRM
Peak off-state current
- - 60
Rated V
DRM
mA
I
RRM
Peak reverse current
- - 60
Rated V
RRM
mA
VGT
Gate trigger voltage
- - 3.0
Tj=25°C VD=6V, IT=1A
V
IGT
Gate trigger current
- - 200
mA
IH
Holding current
- - 1000
Tj=25°C
mA
t
gt
Gate-controlled turn-on delay time
-
0.6
1.0
VD=67% V
DRM
, IT=1000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
t
gd
Turn-on time
-
1.2
2.0
Qrr
Recovered charge
-
150
-
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V
µC
Qra
Recovered charge, 50% Chord
-
85
100
µC
Irr
Reverse recovery current
-
60 - A
t
rr
Reverse recovery time
-
2.5 - µs
tq
Turn-off time (note 2)
- - 23
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%V
DRM
, dVdr/dt=20V/µs
µs
15 - 25
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%V
DRM
, dVdr/dt=200V/µs
R
th(j-hs)
Thermal resistance, junction to heatsink
- - 0.05
Double side cooled
K/W
- - 0.10
Single side cooled
K/W
F
Mounting force
5.3 - 10.0 kN
Wt
Weight
-
90
- g
Characteristics
Notes:-
1) Unless otherwise indicated T
2) The required t
for details of tq codes.
(specified with dV
q
=125°C.
j
/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
dr
Introduction
The R0577 series of Distributed Gate Thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. They are therefore suitable for
medium frequency applications.
Data Sheet. Type R0577YC12x Issue 2 Page 2 of 12 November, 2014
Page 3
Distributed Gate Thyristor R0577YS12x
Voltage Grade
V
DRM VDSM
V
RRM
V
RSM
V VR
DC V
12
1200
1300
810
vqpulse ttt
f
1
max
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
2.0 extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
Data Sheet. Type R0577YC12x Issue 2 Page 3 of 12 November, 2014
Page 4
Distributed Gate Thyristor R0577YS12x
HsJthAVSINKPAV
RWT and fEW
125
.)(max
s
rrrr
dtiQ
150
0
.
2
1
t
t
FactorK
HsJthoriginalSINKnewSINK
RfkETT
)()(
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let R
and T
Then the average dissipation will be:
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
Fig. 1
(ii) Qrr is based on a 150s integration time.
i.e.
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R
= d.c. thermal resistance (°C/W).
th(J-Hs)
Data Sheet. Type R0577YC12x Issue 2 Page 4 of 12 November, 2014
Page 5
Distributed Gate Thyristor R0577YS12x
fEWW
(original)(TOT)
fRETT
thoriginalSINKnewSINK
dt
di
S
r
C
V
R
4
2
Where:
Vr = Commutating source voltage
CS = Snubber capacitance
R =
Snubber resistance
The total dissipation is now given by:
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
Where T
T
SINK (original)
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
SINK (new)
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15 with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Type R0577YC12x Issue 2 Page 5 of 12 November, 2014
Page 6
Distributed Gate Thyristor R0577YS12x
TTTT
IDICIBAV ln
25°C Coefficients
125°C Coefficients
A
2.201514
1.317665
B
0.08313135
0.02417939
C
7.0155×10-4
5.9821×10-4
D
-0.0251939
0.00217881
np
p
t
pt
p
err
1
1
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
p
=
Time Constant of rth term.
D.C. Double Side Cooled
Term 1 2 3 4
rp
0.0200056
9.923438×10-3
0.01433715
4.284403×10-3
p
0.3391689
0.1269073
0.03562131
2.562946×10-3
D.C. Single Side Cooled
Term 1 2 3 4
5
rp
0.06157697
8.431182×10-3
0.01031315
0.01613806
5.181088×10-3
p
2.136132
1.212898
0.1512408
0.04244
2.889595×10-3
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i) the well established Vo and rs tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
14.2 D.C. Thermal Impedance Calculation
Where p = 1 to n, n is the number of terms in the series.
Data Sheet. Type R0577YC12x Issue 2 Page 6 of 12 November, 2014
Page 7
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
Curves
Distributed Gate Thyristor R0577YS12x
Data Sheet. Type R0577YC12x Issue 2 Page 7 of 12 November, 2014
Page 8
Distributed Gate Thyristor R0577YS12x
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
Data Sheet. Type R0577YC12x Issue 2 Page 8 of 12 November, 2014
Page 9
Distributed Gate Thyristor R0577YS12x
Figure 9 - Reverse recovery energy per pulse
Figure 10 - Sine wave energy per pulse
Figure 11 - Sine wave frequency ratings
Figure 12 - Sine wave frequency ratings
Data Sheet. Type R0577YC12x Issue 2 Page 9 of 12 November, 2014
Page 10
Distributed Gate Thyristor R0577YS12x
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
Figure 15 - Square wave frequency ratings
Figure 16 - Square wave frequency ratings
Data Sheet. Type R0577YC12x Issue 2 Page 10 of 12 November, 2014
Page 11
Distributed Gate Thyristor R0577YS12x
Figure 17 - Square wave energy per pulse
Figure 18 - Square wave energy per pulse
Figure 19 - Maximum surge and I2t Ratings
Data Sheet. Type R0577YC12x Issue 2 Page 11 of 12 November, 2014
Page 12
Distributed Gate Thyristor R0577YS12x
W58 – 101A237
ORDERING INFORMATION (Please quote 10 digit code as below)
R0577
YC
12
x
Fixed
Type Code
Fixed
Outline Code
Off-state Voltage Code
V
DRM
/100
tq Code
C=15µs, D=20µs, E=25µs
Typical order code: R0577YC12D – 1200V V
DRM
, 20µs tq, 15.1mm clamp height capsule.
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
© IXYS UK Westcode Ltd.
Outline Drawing & Ordering Information
Data Sheet. Type R0577YC12x Issue 2 Page 12 of 12 November, 2014
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