Datasheet R0472YC12x, R0472YC16x Datasheet (Westcode Semiconductors)

WESTCODE

Fast Turn-off Thyristor

Types P480CH20 to P480CH32

Absolute Maximum Ratings

Date:- 9 Dec, 1999
Rat. Rep:- 99T16
Issue:- 1

VOLTAGE RATINGS

V

DRM

V

DSM

V

RRM

V

RSM

Repetitive peak off-state voltage, (note 1) 2000-3200 V
Non-repetitive peak off-state voltage, (note 1) 2000-3200 V
Repetitive peak reverse voltage, (note 1) 2000-3200 V
Non-repetitive peak reverse voltage, (note 1) 2100-3300 V

OTHER RATINGS

I

T(AV)

I

T(AV)

I

T(AV)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI
I2t

diT/dt

V

RGM

P

G(AV)

P

GM

V

GD

T

HS

T

stg

Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, 25°C, (note 2) 2200 A
D.C. on-state current, 25°C, (note 4) 1180 A
Peak non-repetitive surge tp=10ms, VRM=0.6V

Peak non-repetitive surge tp=10ms, V

2

t capacity for fusing tp=10ms, VRM=0.6V

I2t capacity for fusing tp=10ms, V
Maximum rate of rise of on-state current (repetitive), (Note 6) 300 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 600 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 4 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C

MAXIMUM

LIMITS

MAXIMUM

LIMITS

=55°C, (note 2) 1115 A

sink

=85°C, (note 2) 770 A

sink

=85°C, (note 3) 470 A

sink

, (note 5) 10.65 kA

RRM

≤

RM

≤

10V, (note 5)

RM

10V, (note 5)

, (note 5) 567×10

RRM

11.7 kA

3

3

686×10

UNITS

UNITS

A2s
A2s

Notes:-

1)

De-rating factor of 0.13% per °C is applicable for Tj below 25°C.

2)

Double side cooled, single phase;50Hz, 180° half-sinewave.

3)

Single side cooled, single phase;50Hz, 180° half-sinewave.

4)

Double side cooled.

5)

Half-sinewave, 125°C Tj initial.

6)

VD=67% V

7)

Rated V

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 1 of 13 December, 1999

DRM

, IFG=2A, t

DRM

.

≤

0.5µs, T

r

case

=125°C.

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Characteristics

P480CH20 to P480CH32

PARAMETER MIN. TYP. MAX. TEST CONDITIONS

V

Maximum peak on-state voltage - - 1.87 ITM=1400A V

TM

V

Threshold voltage - - 1.144 V

0

r

Slope resistance - - 0.53

S

Critical rate of rise of off-state

dv/dt

voltage

I

Peak off-state current - - 150 Rated V

DRM

I

Peak reverse current - - 150 Rated V

RRM

V

Gate trigger voltage - - 3.0 Tj=25°C V

GT

I

Gate trigger current - - 300 Tj=25°C. VD=10V, IT=3A mA

GT

I

Holding current - - 1000 Tj=25°C mA

H

Q

Recovered charge, 50% Chord - 800 -

RA

t

Turn-off time

q

Thermal resistance, junction to

R

θ

heatsink

- - 200 VD=80% V

DRM

DRM

RRM

ITM=1000A, tp=1000µs, di/dt=60A/µs,
V

=50V

R

I

=1000A, tp=1000µs, di/dt=60A/µs,

- - 300

- - 400

TM

V

=50V, VDR=80%V

R

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, VDR=80%V

R

dV

/dt=200V/µs

DR

- - 0.024 Double side cooled °C/W

- - 0.048 Single side cooled °C/W

(Note 1)

, dVDR/dt=20V/µs

DRM

,

DRM

UNITS

m

V/µs

mA

mA

µC

µs

µs

F Mounting force 19 - 26 kN

WtWeight - 510 - g

Ω

Notes:-

Unless otherwise indicated Tj=125°C.

1)

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 2 of 13 December, 1999

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Positive development in power electronics

P480CH20 to P480CH32

V

Voltage Grade 'H'

20 2000 2100 1250
22 2200 2300 1350
24 2400 2500 1450
26 2600 2700 1550
28 2800 2900 1650
30 3000 3100 1750
32 3200 3300 1800

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25oC.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn­on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not
exceed 300 A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

1

=

max

f

++

ttt

vqpulse

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 3 of 13 December, 1999

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(

)

(

)

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

Then the average dissipation will be:

Positive development in power electronics

be the Energy per pulse for a given current and pulse width, in joules

Let E

p

Let R
and T

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

P480CH20 to P480CH32

11.0 Reverse recovery ratings

(i) QRA is based on 50% IRM chord as shown in Fig. 1 below.

(ii) Q

i.e.

is based on a 150µs integration time.

RR

=

.)(max

150

µ

∫

0

125

Fig. 1

s

.

RRRR

⋅−=⋅=

RWT and fEW

()

−

HsJthAVSINKPAV

dtiQ

1

t

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.

= d.c. thermal resistance (°C/W).

R

th(J-Hs)

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 4 of 13 December, 1999

FactorK

)()(

=

2

t

⋅+⋅−=

RfkETT

()

−

HsJthoriginalSINKnewSINK

WESTCODE

The total dissipation is now given by:

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

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(original)(TOT)

P480CH20 to P480CH32

⋅+=

fEWW

() ( )

where T
T

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
waveform to a peak value (V
other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum
value obtained from the curves.

NOTE 1

This thyristor has a low reverse recovered charge and peak reverse recovery current. W hen measuring
the charge care must be taken to ensure that:

R

- Reverse Recovery Loss by Measurement

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:

2

4

SINK (new)

SINK (original)

V

⋅=

C

S

is the required maximum heat sink temperature and

is the heat sink temperature given with the frequency ratings.

) of 67% of the maximum grade. If a different grade is being used or VRM is

RM

R

di

⋅

dt

()

⋅⋅−=

fRETT

thoriginalSINKnewSINK

Where: VR= Commutating source voltage

C

= Snubber capacitance

S

R = Snubber resistance

13.0 Gate Drive

The recommended pulse gate drive is 20V, 10Ω with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 5 of 13 December, 1999

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p

p

14.0 Reverse recovery - snubber

The effect of a conventional snubber of 0.25µF and critical damping resistor has been included in the
reverse recovery loss rating. All frequency rating di/dt values apply to the load circuit.

15.0 Computer Modelling Parameters

15.1 Calculating VT using ABCD Coefficients

Positive development in power electronics

P480CH20 to P480CH32

The on-state characteristic I

tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the

r

s

representative equation for V

The constants, derived by curve fitting software, are given in this report for hot characteristics where
possible. The resulting values for V
limited to that plotted.

A 3.495726 A 2.3555853

B -0.3948598 B -0.3630092

C 2.077861×10

D 0.02528862 D 0.05230597

15.2 D.C. Thermal Impedance Calculation

vs VT, on page 11 is represented in two ways; (i) the well established Vo and

T

in terms of IT given below:

T

() ()

agree with the true device characteristic over a current range which is

T

25°C Coefficients 125°C Coefficients

++⋅+=

-4

∑

p

..ln

IDICIBAV

TTTT

C 1.335898×10

−

=

np




1

pt

=



1



t



τ

p

−⋅=



err




-4

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.
r

= Thermal resistance at time t.

t

= Amplitude of pth term.

r

τ

= Time Constant of rth term.

D.C. Double Side Cooled

Term12345

r

p

τ

p

Term123456

r

p

τ

p

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 6 of 13 December, 1999

0.01249139 6.316833×10

0.884081 0.1215195 0.03400152 6.742908×10

0.02919832 4.863568×10-33.744798×10-36.818034×10-32.183558×10-31.848294×10

6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10

-3

D.C. Single Side Cooled

1.850855×10

-3

1.922045×10

-3

-3

6.135330×10

1.326292×10

-4

-3

-3

-3

WESTCODE

p

Positive development in power electronics

15.3 Recovery parameter estimation

Maximum recovery parameters may be calculated, using the polynomial expression:

P480CH20 to P480CH32

dt

p






np

∑

=

p

−=

1

ky

0

di



R

⋅=



p



Where: y = recovery parameter (QRR, QRA, IRM or tRR)

= coefficient found in the relevant table below,

k
n = number of terms in the series,
p = term number

Total Recovered Charge Q

Values of kp for Q

(Valid di/dt range 20 to 300A/µs)

RR

RR

p 500A 1000A 2000A 3000A
4 -2.09402412×10
3 1.45751×10

-3

-6

-2.91944384×10

2.032032×10

-6

-3

-3.7338572×10

2.5988915×10

-6

-3

-4.40363964×10

3.0650828×10
2 -0.36189306 -0.504543597 -0.645291999 -0.76104502
1 43.201093 60.2300446 77.03192769 90.8499791
0 2013.168696 2152.171463 1978.2822469 1877.206416

Recovered Charge QRA, 50% chord (Valid di/dt range 20 to 300A/µs)

Values of kp for Q

RA

p 500A 1000A 2000A 3000A
4 -4.29081096×10
3 2.9865502×10

-7

-4

-8.19501728×10

5.7040105×10

-7

-4

-1.12292258×10

7.815923×10

-6

-4

-1.4525042×10

1.0109923×10
2 -0.074154575 -0.14162778 -0.194065523 -0.251024418
1 8.85222482 16.906859 23.1666306 29.9661159
0 1328.914567 1356.557141 1310.707574 1279.85033

-6

-3

-6

-3

Peak reverse recovery current IRM (Valid di/dt range 20 to 300A/µs)

Values of kp for I

RM

p 500A 1000A 2000A 3000A
4 -1.45381396×10
3 1.053229×10

-7

-4

-1.54902701×10

1.1227386×10

-7

-4

-1.60169068×10

1.1618777×10

-7

-4

-1.68462051×10

1.222712×10

-7

-4

2 -0.028941729 -0.0308917096 -0.0320417097 -0.03377068
1 5.4989033 5.91649886 6.22513091 6.62467463
0 74.0183539 77.9536128 78.9948782 81.9987423

Reverse recovery time tRR (Valid di/dt range 20 to 300A/µs)

Values of kp for t

RR

p 500A 1000A 2000A 3000A
4 2.61485428×10
3 -1.80463954×10
2 4.34765713×10

-8

-5

-3

2.7389056×10

-1.8879585×10

4.5428444×10

-8

-5

-3

2.7878488×10

-1.9183218×10

4.6049784×10

-8

-5

-3

2.5868223×10

-1.7934111×10

4.35521017×10

-8

-5

-3

1 -0.45351294 -0.47359022 -0.47879869 -0.461288481
0 24.98927235 26.6015011 27.51669266 28.0400226

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 7 of 13 December, 1999

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Positive development in power electronics

P480CH20 to P480CH32

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

10000

0.1

SSC

(A)

T

1000

Instantaneous on-state current - I

Tj = 125°CTj = 25°C

0.01

(K/W)

(th)t

0.001

Transient Thermal Impedance - Z

0.0001

DSC

P480CH20-32

100

99T16 Issue 1

012345

Instantaneous on-state voltage - V

T

(V)

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Time (s)

P480CH20-32
99T16 Issue 1

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves

10

P480CH20-32
99T16 Issue 1

Tj=25°C

9

30

P480CH20-32
99T16 Issue 1

Tj=25°C

8

Max VG dc

7

(V)

GT

6

5

IGT, V

GT

4

Gate Trigger Voltage - V

3

2

1

IGD, V

GD

0

0 0.2 0.4 0.6 0.8 1

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 8 of 13 December, 1999

125°C

Gate Trigger Current - I

25°C

-10°C

-40°C
Min VG dc

(A)

GT

25

Max VG dc

20

(V)

GT

15

Gate Trigger Voltage - V

10

PG Max 30W dc

5

0

0246810

PG 4W dc

Gate Trigger Current - I

GT

Min VG dc

(A)

WESTCODE

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P480CH20 to P480CH32

Figure 5 - Total recovered charge, Q

10000

(µC)

RR

Total recovered charge - Q

1000

10 100 1000

Commutation rate - di/dt (A/µs)

RR

3000A

2000A

1000A

500A

Tj = 125°C

P480CH20-32
99T16 Issue 1

Figure 6 - Recovered charge, QRA (50% chord)

10000

(µC)

RA

3000A

2000A

1000A

Recovered charge - Q

500A

Tj = 125°C

P480CH20-32

1000

10 100 1000

Commutation rate - di/dt (A/µs)

99T16 Issue 1

Figure 7 - Peak reverse recovery current, I

1000

(A)

RM

Reverse recovery current - I

100

10 100 1000

Commutation rate - di/dt (A/µs)

3000A
2000A
1000A
500A

Tj = 125°C

P480CH20-32
99T16 Issue 1

RM

Figure 8 - Maximum recovery time, tRR (50% chord)

100

(µs)

RR

10

3000A
2000A
1000A

Reverse recovery time - t

1

10 100 1000

Commutation rate - di/dt (A/µs)

500A

Tj = 125°C

P480CH20-32
99T16 Issue 1

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 9 of 13 December, 1999

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Positive development in power electronics

P480CH20 to P480CH32

Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse

100

(J)

R

10

Energy per pulse - E

P480CH20-32

99T16 Issue 1

Tj = 125°C
V

= 400V

R

Measured

without

snubber

2000A

1500A

1000A

500A

1.00E+03

1.00E+02

1.00E+01

Energy per pulse (J)

1.00E+00

P480CH20-32
99T16 Issue 1

Tj=125°C

8kA

6kA

4kA

2kA

1kA

1

10 100 1000

Commutation rate - di/dt (A/µs)

1.00E-01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1kA

2kA

4kA

6kA

8kA

100% Duty Cycle

P480CH20-32
99T16 Issue 1

THs=55°C

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

100% Duty Cycle

1kA

2kA

4kA

8kA

6kA

THs=85°C

P480CH20-32

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 10 of 13 December, 1999

1.00E+00

99T16 Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

WESTCODE

Positive development in power electronics

P480CH20 to P480CH32

Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

1kA

2kA

4kA

6kA

THs=55°C

di/dt=100A/µs

P480CH20-32
99T16 Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

100% Duty Cycle

8kA

Pulse width (s)

1.00E+04

1kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

2kA

4kA

6kA

THs=55°C

di/dt=500A/µs

P480CH20-32
99T16 Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

100% Duty Cycle

Pulse width (s)

Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings

1.00E+05

1.00E+05

100% Duty Cycle

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 11 of 13 December, 1999

1kA

2kA

4kA

6kA

8kA

THs=85°C

di/dt=100A/µs

P480CH20-32
99T16 Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+04

1kA

2kA

1.00E+03

4kA

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

6kA

THs=85°C

di/dt=500A/µs

P480CH20-32
99T16 Issue 1

1.00E-05 1.00E-04 1.00E-03 1.00E-02

100% Duty Cycle

Pulse width (s)

WESTCODE

Positive development in power electronics

P480CH20 to P480CH32

Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse

1.00E+03
P480CH20-32

99T16 Issue 1

di/dt=100A/µs
Tj=125°C

1.00E+03
P480CH20-32

99T16 Issue 1

di/dt=500A/µs

Tj=125°C

1.00E+02

1.00E+01

Energy per pulse (J)

1.00E+00

1.00E-01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

2kA

1kA

8kA

6kA

4kA

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

Gate may temporarily lose control of conduction angle

100000

1.00E+02

1.00E+01

Energy per pulse (J)

1.00E+00

1.00E-01

8kA

6kA

4kA

2kA

1kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+07

(A)

TSM

10000

Total peak half sine surge current - I

Tj (initial) = 125°C

P480CH20-32
99T16 Issue 1

1000

1 3 5 10 1 5 10 50 100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

I2t: V

I2t: 60% V

I

: V

TSM

I

: 60% V

TSM

RRM

RRM

≤

≤

10V

RRM

10V

RRM

1.00E+06

1.00E+05

s)

2

t (A

2

Maximum I

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 12 of 13 December, 1999

WESTCODE

Positive development in power electronics

Outline Drawing & Ordering Information

P480CH20 to P480CH32

ORDERING INFORMATION

P480 CH

Fixed

Type Code

Typical order code : P480CH28D8G0 – 2.8kV V

Fixed

Outline Code

♦ ♦

♦ ♦ ♦♦♦♦♦♦

♦ ♦♦ ♦

Voltage

Code
20-32

dv/dt Code

C=20V/µs, D=50V/µs,

E=100V/µs, F=200V/µs

, 50V/µs dv/dt, 280µs tq, 27.7mm clamp height capsule.

DRM

WESTCODE

Internet: http://www.westcode.com

In the interest of product improvement, Westcode reserves the right to change specifications at any time without notice

Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 13 of 13 December, 1999

(Please quote 12 digit code as below)

♦♦ ♦♦♦♦

♦♦♦♦

Code

t
2D=200µs, 8H=240µs, 5F=250µs,
8G=280µs, 3D=300µs, 4D=400µs

UK: Westcode Semiconductors Ltd.

P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.

Tel: [phone] Fax: [phone]

E-Mail: [e-mail]

USA: Westcode Semiconductors Inc.

3270 Cherry Avenue, Long Beach, California 90807

Tel: [phone] Fax: [phone]

q

Westcode Semiconductors Ltd.

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