Datasheet R0472YC12x, R0472YC16x Datasheet (Westcode Semiconductors)

Date:- 23 Oct 2014

Data Sheet Issue:- 2

VOLTAGE RATINGS

MAXIMUM

LIMITS

UNITS

V

DRM

Repetitive peak off-state voltage, (note 1)

1200 -1600

V

V

DSM

Non-repetitive peak off-state voltage, (note 1)

1200 -1600

V

V

RRM

Repetitive peak reverse voltage, (note 1)

1200 -1600

V

V

RSM

Non-repetitive peak reverse voltage, (note 1)

1300 - 1700

V

OTHER RATINGS

MAXIMUM

LIMITS

UNITS

I

T(AV)M

Maximum average on-state current, T

sink

=55°C, (note 2)

472

A

I

T(AV)M

Maximum average on-state current. T

sink

=85°C, (note 2)

316

A

I

T(AV)M

Maximum average on-state current. T

sink

=85°C, (note 3)

185

A

I

T(RMS)

Nominal RMS on-state current, T

sink

=25°C, (note 2)

945

A

I

T(d.c.)

D.C. on-state current, T

sink

=25°C, (note 4)

789

A

I

TSM

Peak non-repetitive surge tp=10ms, Vrm=60%V

RRM

, (note 5)

4300

A

I

TSM2

Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)

4700

A

I2t

I2t capacity for fusing tp=10ms, Vrm=60%V

RRM

, (note 5)

92.5×103

A2s

I2t

I2t capacity for fusing tp=10ms, Vrm10V, (note 5)

110.5×103

A2s

(di/dt)cr

Critical rate of rise of on-state current (repetitive), (Note 6)

500

A/µs

Critical rate of rise of on-state current (non-repetitive), (Note 6)

1000

A/µs

V

RGM

Peak reverse gate voltage

5

V

P

G(AV)

Mean forward gate power

2

W

PGM

Peak forward gate power

30

W

T

j op

Operating temperature range

-40 to +125

°C

T

stg

Storage temperature range

-40 to +150

°C

Distributed Gate Thyristor

Types R0472YC12x to R0472YC16x

Absolute Maximum Ratings

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

, IFG=2A, tr0.5µs, T

DRM

initial.

j

=125°C.

case

Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 1 of 12 October, 2014

below 25°C.

j

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

PARAMETER

MIN.

TYP.

MAX.

TEST CONDITIONS (Note 1)

UNITS

VTM

Maximum peak on-state voltage

- - 2.80

ITM=1000A

V

VTM

Maximum peak on-state voltage

- - 3.24

ITM=1416A

V

VT0

Threshold voltage

- - 1.648 V

rT

Slope resistance

- - 1.125

m

(dv/dt)cr

Critical rate of rise of off-state voltage

200 - -

VD=80% V

DRM

, Linear ramp, Gate o/c

V/s

I

DRM

Peak off-state current

- - 60

Rated V

DRM

mA

I

RRM

Peak reverse current

- - 60

Rated V

RRM

mA

VGT

Gate trigger voltage

- - 3.0

Tj=25°C VD=10V, IT=3A

V

IGT

Gate trigger current

- - 200

mA

VGD

Gate non-trigger voltage

- - 0.25

Rated V

DRM

V

IH

Holding current

- - 1000

Tj=25°C

mA

tgd

Gate controlled turn-on delay time

-

0.4

1.0

VD=67% V

DRM

, ITM=2000A, di/dt=60A/µs,

IFG=2A, tr=0.5µs, Tj=25°C

µs

tgt

Turn-on time

-

1.0

2.0

Qrr

Recovered charge

-

155

175

ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V

µC

Qra

Recovered charge, 50% Chord

-

70 - µC

Irm

Reverse recovery current

-

60 - A

t

rr

Reverse recovery time, 50% Chord

-

2.5 - µs

tq

Turn-off time (note 2)

20 - 25

ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%V

DRM

, dVdr/dt=20V/µs

µs
25 - 30

ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%V

DRM

, dVdr/dt=200V/µs

R

thJK

Thermal resistance, junction to heatsink

- - 0.05

Double side cooled

K/W - -

0.10

Single side cooled

K/W

F

Mounting force

5 - 9 kN

Wt

Weight

-

90

- g

Characteristics

Notes:-

1) Unless otherwise indicated Tj=125°C.

2) The required tq (specified with dV
details of tq codes.

Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 2 of 12 October, 2014

/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for

dr

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

VD VR

DC V

1200

1200

1300

810

1600

1600

1700

1020

I

GM

I

G

t

p1

4A/µs

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.

Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 3 of 12 October, 2014

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

vqpulse ttt

f





1

max

 

 

JKthAVKPAV

RWTfEW  125 and

.)(max

(i) Qra is based on 50% Irm chord as shown in Fig. 1

Fig. 1

(ii) Qrr is based on a 150s integration time i.e.





s

rrrr

dtiQ



150

0

.

(iii)

2

1

t

t

FactorK 

9.0 Frequency Ratings

The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.

10.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

12.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.

13.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let R
and TK be the heat sink temperature.

Then the average dissipation will be:

be the steady-state d.c. thermal resistance (junction to sink)

th(JK)

14.0 Reverse recovery ratings

Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 4 of 12 October, 2014

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

 

 

JKthoriginalKnewK

RfkETT 

)()(

fEWW

(original)(TOT)



   

 

fRETT

thoriginalKnewK



dt

di

S

r

C

V

R



 4

2

Where:

Vr
CS
R

=
=
=

Commutating source voltage
Snubber capacitance
Snubber resistance

15.0 Reverse Recovery Loss

15.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:

Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R

The total dissipation is now given by:

15.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

= d.c. thermal resistance (°C/W).

th(JK)

Where T
T

K (original)

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge, care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:

is the required maximum heat sink temperature and

K (new)

is the heat sink temperature given with the frequency ratings.

16.0 Computer Modelling Parameters

16.1 Calculating VT using ABCD Coefficients

Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 5 of 12 October, 2014

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

 

TTTT

IDICIBAV  ln

25°C Coefficients

125°C Coefficients

A

-0.04923298

A

5.22761

B

0.9418825

B

-1.056685

C

2.513442 e-3

C

-5.150569 e

- 4

D

-0.1889025

D

0.1703342

























np

p

t

pt

p

err

1

1



t = Duration of heating pulse in seconds.

rt = Thermal resistance at time t.

rp = Amplitude of pth term.



p

=

Time Constant of rth term.

D.C. Double Side Cooled

Term 1 2 3 4

rp

0.0200056

9.923438×10-3

0.01433715

4.284403×10-3



p

0.3391689

0.1269073

0.03562131

2.562946×10-3

D.C. Single Side Cooled

Term 1 2 3 4

5

rp

0.06157697

8.431182×10-3

0.01031315

0.01613806

5.181088×10-3



p

2.136132

1.212898

0.1512408

0.04244

2.889595×10-3

The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in

terms of IT given below:

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.

16.2 D.C. Thermal Impedance Calculation

Where p = 1 to n, n is the number of terms in the series.



Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 6 of 12 October, 2014

Figure 1 - On-state characteristics of Limit device

Figure 2 - Transient thermal impedance

100

1000

10000

0 1 2 3 4

Instantaneous on-state voltage - VT (V)

Instantaneous on-state current - I

T

(A)

125°C

25°C

0.0001

0.001

0.01

0.1

1

0.000001 0.0001 0.01 1 100

Time (s)

Transient Thermal Impedance - Zth, (k/W)

SSC 0.1K/W

DSC 0.05K/W

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

0

1

2

3

4

5

6

7

8

0 0.1 0.2 0.3 0.4 0.5 0.6

Gate Trigger Current - IGT (A)

Gate Trigger Voltage - V

GT

(V)

IGD, V

GD

IGT, V

GT

Max VG dc

Min V

G

Tj=25°C

125°C

25°C

-10°C

-40°C

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10

Gate Trigger Current - IGT (A)

Gate Trigger Voltage - V

GT

(V)

PG 2W dc

PG Max 30W dc

Max VG dc

Tj=25°C

Min VG dc

R0472YC12x -16x

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Curves

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 7 of 12 October, 2014

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

Figure 5 - Total recovered charge, Qrr

Figure 6 - Recovered charge, Qra (50% chord)

10

100

1000

1 10 100 1000

Commutation rate - di/dt (A/µs)

Total recovered charge - Q

rr

(µC)

Tj = 125°C

2000A
1000A
550A
200A

10

100

1000

1 10 100 1000

Commutation rate - di/dt (A/µs)

Recovered charge - Q

ra

(µC)

Tj = 125°C

2000A
1000A
550A
200A

Figure 7 - Peak reverse recovery current, Irm

Figure 8 - Maximum recovery time, trr (50% chord)

1

10

1 10 100 1000

Commutation rate - di/dt (A/µs)

Reverse recovery time - t

rr

(µs)

Tj = 125°C

2000A
1000A
550A
200A

R0472YC12x -16x

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Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 8 of 12 October, 2014

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

Figure 9 – Reverse recovery energy per pulse

Figure 10 - Sine wave energy per pulse

1

10

100

1000

1 10 100 1000

Commutation rate - di/dt (A/µs)

Energy per pulse - E

r

(J)

Tj = 125°C
V

rm

 400V

2000A
1000A
550A
200A

1.00E-02

1.00E-01

1.00E+00

1.00E+01

1.00E+02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Energy per pulse (J)

3kA

2kA

1kA

550A

Tj=125°C

200A

Figure 11 – Square wave energy per pulse

Figure 12 - Square wave energy per pulse

1.00E-02

1.00E-01

1.00E+00

1.00E+01

1.00E+02

1.00E+03

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Energy per pulse (J)

3kA

2kA

200A

1kA

550A

di/dt=100A/µs

Tj=125°C

1.00E-02

1.00E-01

1.00E+00

1.00E+01

1.00E+02

1.00E+03

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Energy per pulse (J)

Tj=125°C

di/dt=500A/µs

1kA
550A
200A

3kA
2kA

R0472YC12x -16x

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Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 9 of 12 October, 2014

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

Figure 13 - Sine wave frequency ratings

Figure 14 - Sine wave frequency ratings

1.00E+01

1.00E+02

1.00E+03

1.00E+04

1.00E+05

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

Frequency (Hz)

3kA

2kA

1kA

Tk=55°C

100% Duty Cycle

550A

200A

1.00E+00

1.00E+01

1.00E+02

1.00E+03

1.00E+04

1.00E+05

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Frequency (Hz)

3kA

200A

1kA

2kA

Tk=85°C

100% Duty Cycle

550A

Figure 15 - Square wave frequency ratings

Figure 16 - Square wave frequency ratings

1.00E+00

1.00E+01

1.00E+02

1.00E+03

1.00E+04

1.00E+05

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Frequency (Hz)

3kA

2kA

200A

550A

di/dt=100A/µs

Tk=55°C

100% Duty Cycle

1kA

1.00E+00

1.00E+01

1.00E+02

1.00E+03

1.00E+04

1.00E+05

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Frequency (Hz)

2kA

200A

1kA

550A

di/dt=500A/µs

Tk=55°C

100% Duty Cycle

3kA

R0472YC12x -16x

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Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 10 of 12 October, 2014

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

Figure 17 - Square wave frequency ratings

Figure 18 - Square wave frequency ratings

1.00E+01

1.00E+02

1.00E+03

1.00E+04

1.00E+05

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Frequency (Hz)

3kA

2kA

200A

1kA

550A

di/dt=100A/µs

Tk=85°C

100% Duty Cycle

1.00E+00

1.00E+01

1.00E+02

1.00E+03

1.00E+04

1.00E+05

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Frequency (Hz)

3kA

2kA

200A

1kA

di/dt=500A/µs

Tk=85°C

100% Duty Cycle

550A

Figure 19 - Maximum surge and I2t Ratings

1000

10000

100000

Total peak half sine surge current - I

TSM

(A)

1.00E+04

1.00E+05

1.00E+06

Maximum I

2

t (A

2

s)

13510151050100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Tj (initial) = 125°C

I2t: V

RRM



10V

I2t: 60% V

RRM

I

TSM

: V

RRM



10V

I

TSM

: 60% V

RRM

Gate may temporarily lose control of conduction angle

R0472YC12x -16x

Issue 2

R0472YC12x -16x

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Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 11 of 12 October, 2014

Distributed Gate Thyristor types R0472YC12x to R0472YC16x

W58 – 101A237

ORDERING INFORMATION (Please quote 10 digit code as below)

R0472

YC



x

Fixed

Type Code

Fixed

Outline Code

Voltage Code

V

DRM

/100

12, 16

tq Codes

E=25µs, F=30µs

Typical order code: R0472YC16F – 1600V V

RRM/VDRM

, 30µs tq, 15.1mm clamp height capsule.

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.

© IXYS UK Westcode Ltd.

Outline Drawing & Ordering Information

Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 12 of 12 October, 2014