Page 1
Transistors
General purpose transistor
(isolated transistor and diode)
QSZ3
A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package.
zApplica tions
DC / DC converter
Motor driver
zFeatures
1) Low V
CE(sat)
2) Small package
zStructure
Silicon epitaxial planar transistor
zEquivalent circuit
(4)(5)
Tr2Tr1
(2) (3)(1)
zPackaging specifications
Type QSZ3
Package
Marking
Code
Basic ordering unit(pieces)
TSMT5
3000
Z03
TR
zExternal dimensions (Unit : mm)
QSZ3
(1)
0.4
(3) (2)
0.16
0.3∼0.6
ROHM : TSMT5
Abbreviated symbol : Z03
2.8
1.6
(5)
0.95
2.9
1.9
0.95
(4)
0.85
0.7
0∼0.1
Each lead has same dimensions
QSZ3
1/4
Page 2
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×
Tr 2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×
zElectrical characteristics (Ta=25°C)
Tr1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Tr 2
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Parameter Symbol
CBO
V
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
−55 to +150
t
0.8mm ceramic substrate.
Parameter Symbol
CBO
V
VCEO
VEBO
IC
ICP
Pc
Tj
Tstg
−50 to +150
t
0.8mm ceramic substrate.
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
CBO
I
EBO
I
CE(sat)
V
h
f
Cob − 30 −
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
I
CBO
I
EBO
CE(sat)
V
FE
h
f
Cob − 30 −
Limits
−15
−12
−6
−3
−6
500
Unit
V
V
V
A
A
mW/Total
1.25 W/Total
0.9 W/Element
150
°C
°C
Limits
15
12
6
3
6
500
Unit
V
V
V
A
A
mW/Total
1.25 W/Total
0.9 W/Element
150
°C
°C
CBO
CEO
EBO
−15
−12
−6
−−
−−
−−120
FE
T
CBO
CEO
EBO
270 − 680
−
15
12
6
−−
−−
− 120
270 − 680
T
−
∗1
∗2
∗3
∗3
∗1
∗2
∗3
∗3
−−
−−
−−
−100
−100
−250 mV
280
360
−
−−
−−
−−
100
100
250 mV
−
V
C
= −10µA
I
V
C
= −1mA
I
V
E
= −10µA
I
nA VCB= −15V
nA VEB= −6V
IC= −1.5A, IB= −30mA
− V
CE
= −2V, IC= −500mA
MHz
VCE= −2V, IE=500mA, f=100MHz
CB
= −10V, IE=0A, f=1MHz
V
pF
V
C
=10µA
I
V
C
=1mA
I
V
E
=10µA
I
nA VCB=15V
nA VEB=6V
IC=1.5A, IB=30mA
CE
− V
MHz
pF
=2V, IC=500mA
VCE=2V, IE= −500mA, f=100MHz
V
CB
=10V, IE=0A, f=1MHz
QSZ3
∗
∗
∗
∗
2/4
Page 3
Transistors
zElectrical characteristic curves
Tr1(PNP)
1000
125˚C
25˚C
FE
− 40˚C
100
DC CURRENT GAIN : h
VCE=−2V
Pulsed
10
0.001 0.01 0.1
COLLECTOR CURRENT : IC (
Fig1. DC current gain vs. collector current
10
(A)
C
1
110
A)
1
V)
(
CE(sat)
0.1
0.01
IC/IB=20/1
Pulsed
0.001
COLLECTOR SATURATION VOLTAGE : V
0.001 0.01 0.1 1
COLLECTOR CURRENT : IC (
125˚C
25˚C
− 40˚C
Fig.2 Collector-emitter saturation voltage
vs. collector current
1000
A)
Ta=25°C
VCE=2V
f=100MHz
10
(V)
BE(sat)
1
− 40˚C
125˚C
IC/IB=20/1
BASE SATURATION VOLTAGE : V
Pulsed
0.1
10
0.001 0.01 0.1 1
COLLECTOR CURRENT : IC (
Fig.3 Base−emitter saturation voltage
vs.collector current
1000
Cib
25˚C
QSZ3
10
A)
IC=0A
f=1MHz
°C
Ta=25
25˚C
0.1
125˚C
0.01
COLLECTOR CURRENT : I
IC/IB=20/1
Pulsed
0.001
0.1 1
BASE TO EMITTER CURRENT : VBE (V
− 40˚C
Fig.4 Grounded emitter propagation
charactereistics
Tr2(NPN)
1000
Ta=100 C
FE
Ta=25 C
Ta=40 C
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
Fig.7 DC current gain
vs. collector current
VCE=−2V
Pulsed
100
TRANSITION FREQUENCY : fr (MHz)
10
10
)
0.01 0.1 1 10
EMITTER CURRENT : I
Fig.5 Gain bandwidth product
vs. emitter current
10
IC/IB=20/1
CE
=2V
V
(V)
Pulsed
CE(sat)
1
Ta=100 C
0.1
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
0.01
0.001 0.01 0.1 1
COLLECTOR CURRENT : IC (A)
Fig.8 Collector-emitter saturation voltage
vs. collector current
Cob
100
10
EMITTER INPUT CAPACITANCE : Cib (pF)
0.001 0.01 0.1 1 10
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
E
(A)
Ta=25 C
Ta= −45 C
10
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V
Fig 6. Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base volatage
10
(V)
BE(sat)
IC/IB=50/1
1
IC/IB=20/1
BASE SATURATION VOLTAGE : V
0.1
0.001 0.01 0.1 1 10
IC/IB=10/1
Ta=25 C
Pulsed
100
CB
(V)
COLLECTOR CURRENT : IC (A)
Fig.9 Base-emitter saturation voltage
vs.collector current
3/4
Page 4
QSZ3
Transistors
(A)
C
10
Ta=100 C
1
0.1
Ta=25 C
Ta= −45 C
IC/IB=20/1
Pulsed
1000
Ta=25 C
VCE=−2V
f= 100MHz
100
1000
(V)
BE(sat)
100
IC=0A
f=1MHz
Ta=
25 C
Cib
0.01
COLLECTOR CURRENT :I
0.001
0.1 1 10
BASE TO EMITTER CURRENT : VBE (V)
Fig.10 Grounded emitter propagation
characteristics
TRANSITION FREQUENCY : fT (MHz)
10
0.01 0.1 1 10
EMITTER CURRENT : IE (A)
Fig.11 Gain bandwidth product
vs. emitter current
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
10
0.001 0.01 0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V
Fig.12 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cob
CB
(V)
4/4
Page 5
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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