Page 1
Transistors
Low frequency amplifier
QST7
QST7
!!!!Application
!!!!External dimensions (Units : mm)
Low frequency amplifier
Driver
)
1
(
)
!!!!Features
1) A collector current is large.
2) V
≤ −370mV
CE(sat)
At I
=− 1A / IB = −50mA
C
2
(
0.4
)
3
(
0.16
Abbreviated symbol : T07
!!!!Equivalent circuit
!!!!
Absolute maximum ratings
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Single pulse, PW=1ms
∗2
Each Terminal Mounted on a Recommended
(Ta=25°C)
CBO
V
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
−30
−30
−6
−1.5
−3
500
150
−55~+150
Unit
V
V
V
A
A
mW
°C
°C
∗1
∗2
(1) (2) (3)
2.8
1.6
(6)(5)(4)
2.9
0.85
Each lead has same dimensions
(4)(5)(6)
!!!!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
BV
BV
BV
I
I
V
CE(sat)
h
CBO
EBO
f
CBO
CEO
EBO
FE
T
−30
−30
−6
−−
−−
−−
−−
−−
−−200
270 − 680
280
−
Cob − 13 −
V
V
V
−100
−100
nA VCB=−30V
nA VEB=−6V
−370 mV
− V
MHz
−
pF
I
C
=−10µA
I
C
=−1mA
I
E
=−10µA
IC=−1A, IB=−50mA
CE
=−2V, IC=−100mA
∗
VCE=−2V, IE=100mA, f=100MHz
CB
=−10V, IE=0A, f=1MHz
V
∗
1/2
Page 2
Transistors
!!!!
Packaging specifications
Package
Type
QST7
Code
Basic ordering unit (pieces)
QST7
Taping
TR
3000
!!!!Electrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
Ta=100°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
1
VCE=−2V
Pulsed
(A)
C
COLLECTOR CURRENT : I
0.001
Ta=100°C
0.1
0.01
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
Fig.4 Grounded emitter propagation
characteristics
1000
100
Ta=25°C
Ta=−40°C
Cib
VCE=−2V
Pulsed
C
(A)
BE
Ta=25°C
I
f=1MHz
C
1
(V)
(V)
CE (sat)
BE (sat)
V
BE(sat)
0.1
V
CE(sat)
0.01
0.001 0.01 0.1 101
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Ta=−40°C
Ta=25°C
Ta=100°C
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
Ta=100°C
Ta=25°C
Ta=−40°C
IC/IB=20/1
Pulsed
C
(A)
10
Ta=25°C
(V)
Pulsed
CE(sat)
1
0.1
IC/IB=50/1
IC/IB=20/1
0.01
0.001
0.001 0.01 0.1 1 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
IC/IB=10/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
C
(A)
vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1 10
(V)
EMITTER CURRENT : I
Ta=25°C
CE
=−2V
V
f=100MHz
E
(A)
Fig.5 Gain bandwidth product
1000
100
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 10
COLLECTOR CURRENT : I
Fig.6 Switching time
tstg
Ta=25°C
VCE=−5V
I
C/IB
=20/1
tf
tdon
tr
C
(A)
vs. emitter current
=
0A
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
1 10 1000.1
Cob
EB
(
V)
CB
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
V)
2/2
Page 3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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