Datasheet QST5 Datasheet (ROHM)

Transistors

Low frequency amplifier

QST5

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

At lc= −1.5A / l

: max. −370mV

CE(sat)

= −75mA

B

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1
∗2
∗3

Parameter

Single pulse, Pw=1ms

Each terminal mounted on a recommended
Mounted on a 25mm

×

25mm

Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

t

×

0.8mm ceramic substrate

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff curent
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain

Transition frequency

Collector output capacitance

CBO
EBO

h

f

CBO
CEO
EBO

FE
T

Unit

V
V
V
A

∗1

A

∗2

mW

∗3

°C
°C

−30

−30

−6

−−

−−

−−180

270 − 680

−

Limits

−30

−30

−6

−2

−4

500

1.25 W

150

BV
BV
BV

I
I

V

CE(sat)

Cob − 20 −

zExternal dimensions (Unit : mm)

zEquivalent circuit

−−

−−

−−

280

2.8

1.6

(4)

0.4

(5)

(6)

0.16

Each lead has same dimensions

ROHM : TSMT6 Abbreviated symbol : T05

(1) (2) (3)

V
V
V

−100

−100

nA VCB= −30V
nA VEB= −6V

−370 mV

(3)

(2)

(1)

1pin mark

(4)(5)(6)

I

C

= −10µA

I

C

= −1mA

E

= −10µA

I

IC= −1.5A, IB= −75mA

− VCE= −2V, IC= −200mA

MHz

−

VCE= −2V, IE=200mA, f=100MHz
V

CB

pF

= −10V, IE=0A, f=1MHz

QST5

2.9

0.85

Rev.B 1/2

Transistors

zPackaging specifications

package

Type

QST5

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

10

VBE=−2V
Pulsed

(A)

C

1

0.1

COLLECTOR CURRENT :I

0.01

0.1 1 10

BASE TO EMITTER CURRENT : VBE (V)

Fig.4 Grounded emitter propagation
characteristics

1000

(A)

C

100

Code
Basic ordering unit(pieces)

Ta=100 C

Ta=25 C

Ta=−40 C

COLLECTOR CURRENT : IC (A)

Fig.1 DV current gain
vs. collector current

Ta=100 C

Cib

Cob

Ta=25 C

Ta=−40 C

VCE=−2V
Pulsed

IC=0A
f=1MHz
Ta=25 C

Taping

TR

3000

10

(V)

IC/IB=20/1
Pulsed

CE(sat)

1

0.1

0.01

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

Ta=−40 C

Ta=25 C

Ta=100 C

Fig.2 Collector-emitter saturation voltage
vs. collector current

1000

100

TRANSITION FREQUENCY : fT (MHz)

10

0.01 0.1 1 10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product
vs. emitter curent

Ta=25 C

CE

=−2V

V
f=100MHz

10

(V)

BE(sat)

1

IC/IB=50/1

IC/IB=20/1

0.1

BASE SATURATION VOLTAGE : V

10

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.3 Base-emitter saturation voltage
vs. collector current

10000

1000

100

10

SWITCHINGTIME : (ns)

1

0.01

0.1 1

COLLECTOR CURRENT : IC(A)

Fig.6 Switching time

IC/IB=10/1

tstg

QST5

Ta=25 C
Pulsed

25 C

Ta=
VCE=−2V
I

C/IB

=20/1

Pulsed

tf

tdon

tr

10

10

COLLECTOR CURRENT :I

1

0.001 0.1 1000.01 1 10

EMITTER TO BASE VOLTAGE : VBE (V)
COLLECTOR TO BASE VOLTAGE : V

Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

CB

(V)

Rev.B 2/2

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1