Datasheet QSL12 Datasheet (ROHM) [ru]

Transistors

General purpose transistor
(isolated transistor and diode)

QSL12

A 2SD2675 and a RB461F are housed independently in a TSMT5 package.

zApplica tions

DC / DC converter
Motor driver

zFeatures

1) Tr : Low V
Di : Low V

CE(sat)
F

2) Small package

zStructure

Silicon epitaxial planar transistor
Schottky barrier diode

zEquivalent circuit

zExternal dimensions (Unit : mm)

QSL12

(1)

0.4

(3) (2)

0.16

0.3 to 0.6

ROHM : TSMT5

Abbreviated symbol : L12

2.8

1.6

(5)

0.95

2.9

1.9

0.95

(4)

0.85

0.7

0 to 0.1

Each lead has same dimensions

QSL12

(5) (4)

Tr1

Di2

(3)(2)(1)

zPackaging specifications

Type QSL12

Package

Marking

Code

Basic ordering unit(pieces)

TSMT5

L12

TR

3000

Rev.A 1/4

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

P

D

Symbol

Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

Pc

Tj

Tstg

Limits

F

V

I

R

t

rr

V

I

Tstg

0.5

1.25

BV
BV
BV

V

RM

V

R

I

F

FSM

P

D

Tj

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

FE

h

f

T

Cob

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse, Pw=1ms

∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate

+

+

Di2

Parameter Symbol

Peak reverse voltage
Reverse voltage (DC)
Average rectified forward current

orward current surge peak (60HZ, 1∞)

F
Power dissipation
Junction temperature
Range of storage temperature

∗ Mounted on a 25mm 25mm t0.8mm ceramic substrate

+

+

Tr1&Di2

Parameter Symbol

Total power disipation

∗1 Each terminal mounted on a recommended land.
∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate.

+

+

zElectrical characteristics (Ta=25°C)
Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Di2

Parameter

Forward voltage
Reverse current
Reverse recovery fime

/

ELEMENT

W

Unit

V
V
V
A
A

°C
°C

∗1
∗2

Limits

30
30

6
1
2

0.9

150

−40 to +125

Limits

25
20

700

3

0.7

125

−40 to +125

Unit

V
V

mA

A

W / ELEMENT

°C
°C

∗

Unit

W / TOTAL
W

/

TOTAL

1

∗

2

∗

30

−−

30

−−

6

−−

−−

−−

120 350 mV

−

270

−

320

−

7

−

Min. Typ. Max. Unit Conditions

−

− 200

−

9

−−

100 nA
100 nA

680

MHz

−

pF

−

490450

V

I

C

=10µA

V

C

=1mA

I

V

E

=10µA

I
VCB=30V

EB

=6V

V

IC/IB=500mA/25mA

− V

CE/IC

=2V/100mA

VCE=2V, I

E

=

−100mA, f=100MHz

VCB=10V, IE=0A, f=1MHz

F

mVnsI

µA

=700mA

VR=20V

F=IR

=100mA, Irr=0.1I

I

QSL12

∗

∗

R

Rev.A 2/4

Transistors

zElectrical characteristic curves

Tr1

1000

FE

Ta=25°C

Ta=100°C

Ta= −40°C

VCE=2V
Pulsed

QSL12

10

(V)

IC/IB=20/1
Pulsed

(V)

BE (sat)

CE (sat)

V

BE(sat)

1

Ta= −40°C

Ta=25°C

Ta=100°C

10

(V)

CE(sat)

Ta=25°C

VCE=2V

1

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1

COLLECTOR CURRENT : I

C

(A)

Fig.1 DC current gain

vs. collector current

1

VCE=2V
Pulsed

(A)

C

0.1

Ta=100°C

0.01

COLLECTOR CURRENT : I

0.001
0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Ta=25°C

Ta= −40°C

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

BE

(V)

Ta=25

I

C

=

0A

f=1MHz

V

CE(sat)

0.1

0.01

0.001 0.01 0.1 1

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

Ta=100°C

Ta=25°C

Ta= −40°C

COLLECTOR CURRENT : I

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1

EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

°C

C

(A)

Ta=25°C

CE

=2V

V
f=100MHz

E

(A)

0.1

IC/IB=50/1

IC/IB=20/1

0.01

IC/IB=10/1

0.001

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

100

tr

10

SWITCHING TIME : (ns)

Ta=25°C

CE

=5V

V

C/IB

=20/1

I

1

0.01 0.1 1

COLLECTOR CURRENT : I

Fig.6 Switching time

C

(A)

tstg

tf

tdon

C

(A)

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

1 10 1000.10.01

EB

V)

(

CB

V)

(

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 3/4

Transistors

Di2

10

1

100m

10m

1m

FORWARD CURRENT : IF (A)

0.1m
0 0.1 0.2 0.3 0.4 0.5 0.6

°C

125

Ta=

C

°

25

=

Ta

FORWARD VOLTAGE : VF (V)

C

°

−25

Ta=

Fig.8 Forward characteristics

1000m

100m

(A)

R

REVERSE CURRENT : I

10m

100µ

10µ

0.1µ

Ta=125°C

1m

Ta=25°C

Ta= −25°C

1µ

010

20 30 40 50 60 70

REVERSE VOLTAGE : VR (V)

Fig.9 Reverse characteristics

QSL12

Rev.A 4/4

Appendix

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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Products listed in this document are no antiradiation design.

Notes

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(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
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safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1