Page 1
Transistors
General purpose transistor
(isolated transistor and diode)
QSL1 1
A 2SB1710 and a RB461F are housed independently in a TSMT5 package.
zApplica tions
DC / DC converter
Motor driver
zFeatures
1) Tr : Low V
Di : Low V
CE(sat)
F
2) Small package
zStructure
Silicon epitaxial planar transistor
Schottky barrier diode
zEquivalent circuit
(5) (4)
Di2
Tr1
(1)
(3)(2)
zPackaging specifications
Type QSL11
Package
Marking
Code
Basic ordering unit(pieces)
TSMT5
3000
L11
TR
zExternal dimensions (Unit : mm)
QSL11
(1)
0.4
(3) (2)
0.16
0.3 to 0.6
ROHM : TSMT5
Abbreviated symbol : L11
2.8
1.6
(5)
0.95
2.9
1.9
0.95
(4)
0.85
0.7
0 to 0.1
Each lead has same dimensions
QSL11
Rev.A 1/4
Page 2
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms
∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate
+
+
Di2
Parameter Symbol
Peak reverse voltage
Reverse voltage (DC)
Average rectified forward current
F
orward current surge peak (60HZ, 1∞)
Power dissipation
Junction temperature
Range of storage temperature
∗ Mounted on a 25mm 25mm t0.8mm ceramic substrate
+
+
Tr1&Di2
Symbol
CBO
V
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
V
RM
V
I
I
FSM
P
Tj
Tstg
R
F
D
Limits
−30
−30
−6
−1
−2
0.9
150
−40 to +125
Limits
700
125
−40 to +125
Unit
V
V
V
A
A
W/ ELEMENT
°C
°C
25 V
20
3
0.7
W/ ELEMENT
QSL11
∗1
∗2
Unit
V
mA
A
∗
°C
°C
Parameter Symbol
Total power dissipation
1
∗
Each terminal mounted on a recommended land
∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate
+
P
+
Limits
D
0.5
1.25
zElectrical characteristics (Ta=25°C)
Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Di2
Parameter Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Reverse recovery time
Symbol
V
F
I
R
t
rr
Unit
1
∗
2
∗
−30 −−
−30 −−
−6 −−
−−−100
−−−100
−−150 −350
270
320
−
−
BV
BV
BV
V
CBO
CEO
EBO
CBO
I
EBO
I
CE(sat)
FE
h
f
T
Cob
W/ TOTAL
W/ TOTAL
−
−
−
−−
9
−
7
490450
200
680
−
−
mVnsI
µA
V
I
V
I
V
I
nA
V
nA
V
mV
I
− V
MHz
V
pF
V
F
=700mA
VR=20V
F=IR
=100mA, Irr=0.1I
I
C
=
−10µA
C
=
−1mA
E
=
−10µA
CB
=
−30V
EB
=
−6V
C
=
−500mA, I
CE
=
CE
=
CB
=
B
=
−25mA
−2V, I
C
=
−100mA
−2V, IE=100mA, f=100MHz
−10V, IE=0A, f=1MHz
R
∗
∗
Rev.A 2/4
Page 3
Transistors
zElectrical characteristic curves
Tr1
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
Ta=100°C
Ta=25°C
Ta= −40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
1
VCE= −2V
Pulsed
(A)
C
COLLECTOR CURRENT : I
0.001
Ta=100°C
0.1
0.01
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
Fig.4 Grounded emitter propagation
characteristics
100
Cob
Ta=25°C
Ta= −40°C
Cib
VCE= −2V
Pulsed
C
(A)
BE
Ta=25°C
I
C
=
f=1MHz
QSL11
10
(V)
IC/IB=20/1
Pulsed
(V)
CE (sat)
BE (sat)
V
BE(sat)
1
0.1
0.01
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
Ta= −40°C
V
CE(sat)
0.001 0.01 0.1 1
COLLECTOR CURRENT : I
Ta=25°C
Ta= −40°C
Ta=25°C
Ta=100°C
C
(A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1
(V)
EMITTER CURRENT : I
Ta=25°C
CE
=
V
f=100MHz
E
(A)
−2V
Fig.5 Gain bandwidth product
vs. emitter current
0A
10
Ta=25°C
(V)
Pulsed
CE(sat)
1
IC/IB=20/1
0.1
0.01
0.001
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
IC/IB=50/1
COLLECTOR CURRENT : I
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
tstg
100
tr
10
SWITCHING TIME : (ns)
1
0.01 0.1 1
COLLECTOR CURRENT : I
Fig.6 Switching time
IC/IB=10/1
C
Ta=25°C
V
CE
C/IB
I
tf
C
(A)
(A)
=
−5V
=20/1
tdon
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
1 10 1000.1
EB
V)
(
CB
V)
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A 3/4
Page 4
Transistors
Di2
10
1
100m
10m
1m
FORWARD CURRENT : IF (A)
0.1m
0 0.1 0.2 0.3 0.4 0.5 0.6
°C
125
Ta=
C
°
25
=
Ta
FORWARD VOLTAGE : V
C
°
25
−
Ta=
Fig.9 Forward characteristics
F (V)
1000m
100m
(A)
R
REVERSE CURRENT : I
10m
1m
100µ
10µ
0.1µ
1µ
Ta= −25°C
010
REVERSE VOLTAGE : V
Ta=125°C
Ta=25°C
20 30 40 50 60 70
Fig.10 Reverse characteristics
QSL11
R
(V)
Rev.A 4/4
Page 5
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Page 6
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