QSD2030F — Plastic Silicon Photodiode
July 2010
QSD2030F
Plastic Silicon Photodiode
Features
■
PIN photodiode
Package type: T-1 3/4 (5mm lens diameter)
■
■
Wide reception angle, 40°
Daylight filter
■
■
Package material and color: black epoxy
High sensitivity
■
■
Peak sensitivity λ = 880nm
Radiant sensitive area: 1.245mm x 1.245mm
■
Package Dimensions
0.195 (4.95)
REFERENCE
SURFACE
0.800 (20.3)
MIN
0.050 (1.25)
0.305 (7.75)
0.040 (1.02)
NOM
Schematic
CATHODE
CATHODE
ANODE
0.100 (2.54)
NOM
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030F Rev. 1.1.1
Θ
λ
, λ
, λ
(T
Absolute Maximum Ratings
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Unit
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
BR
P
D
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
Operating Temperature -40 to +100 °C
Storage Temperature -40 to +100 °C
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3,4)
(2,3)
240 for 5 sec °C
260 for 10 sec °C
Reverse Breakdown Voltage 50 V
Power Dissipation
(1)
100 mW
QSD2030F — Plastic Silicon Photodiode
Electrical/Optical Characteristics
(T
=25°C)
A
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
PS
λ
SR
V
I
D
I
L
V
O
TC
I
SC
TC
C Capacitance V
t
r
t
f
Peak Sensitivity Wavelength 880 nm
Wavelength Sensitivity Range 700 1100 nm
Reception Angle ±20 °
Forward Voltage I
F
Reverse Dark Current V
Reverse Light Current Ee = 0.5mW/cm
= 80mA 1.3 V
F
= 10V, Ee = 0 10 nA
R
2
, V
= 5V,
R
15 25 µA
= 950nm
Open Circuit Voltage Ee = 0.5mW/cm
Temperature Coefficient of V
V
O
Short Circuit Current Ee = 0.5mW/cm
Temperature Coefficient of I
I
SC
Rise Time V
= 0, f = 1MHz, Ee = 0 60 pF
R
= 5V, R
R
2
= 880nm 420 mV
+0.6 mV
2
= 880nm 50 µA
+0.3 %
= 50 Ω , λ = 950nm 5 ns
L
Fall Time 5
/
K
/
K
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030F Rev. 1.1.1 2
Typical Performance Characteristics
Figure 1. Reverse Light Current vs. Emitter Output Power Figure 2. Angular Response
55
V
= 5V
R
50
TA = 25°C
45
40
35
30
25
20
15
10
5
IL–Reverse Light Current Voltage (µA)
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Ee–Emitter output power (mw/cm2)
1.0
0.9
0.8
0.7
0°
10°
QSD2030F — Plastic Silicon Photodiode
20°
30°
40°
50°
60°
70°
80°
90°
14
12
10
8
6
4
Cj–Capacitance (pF)
2
0
024681012141618 20
Vr–Reverse Voltage (V)
Figure 4. Dark Current vs. Reverse VoltageFigure 3. Capacitance vs. Reverse Voltage
1.3
TA = 25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
ID–Dark Current (nA)
0.5
0.4
0.3
051015 20 25 30 35
VR–Break Down Voltage (V)
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030F Rev. 1.1.1 3
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Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030F Rev. 1.1.1 4
®
*
®
®
®
Rev. I49
QSD2030F — Plastic Silicon Photodiode
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