Page 1
Transistors
2.5V Drive Nch+Pch MOSFET
QS6M4
zStructure
Silicon P-channel MOSFET
Silicon N-channel MOSFET
zFeatures
1) The QS6M4 combines Pch MOSFET with a Nch
MOSFET in a single TSMT6 package.
2) Low on-state resistance with a fast switching.
3) Low voltage drive (2.5V).
zApplications
Load switch, inverter
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.950.95
(6)
(5)
(4)
(1)
1pin mark
(2)
0.4
Abbreviated symbol : M04
(3)
QS6M4
1.0MAX
0.85
0.7
2.8
1.6
0~0.1
0.6
~
0.3
0.16
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6M4
Taping
TR
3000
zEquivalent circuit
(6) (5) (4)
∗1
∗2
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
ContinuousSource current
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
∗1
∗1
∗2
Nchannel
−55 to +150
Limits
1.25
0.9
150
Pchannel
−20
±12
±1.5
±6.0
−0.75
−6.0
Unit
V30
V±12
A±1.5
A±6.0
A0.8
A6.0
W / TOTAL
W / ELEMENT
°CTch
°CTstg
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(2) (3)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
Rth (ch-a)
100
∗
139
°C / W / TOTAL
°C / W / ELEMENT
Rev.B 1/5
Page 2
Transistors
zElectrical characteristics (T a=25°C)
<Tr1. N-ch MOSFET>
QS6M4
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
V
(BR) DSS
V
R
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
Min.−Typ. Max.
Unit
Conditions
−±10 µAVGS=±12V / VDS=0V
30 −−VID=1mA / VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 170 230 I
− 180 245 mΩ I
− 260 360 I
1.0 −−SV
− 80 − pF V
− 2515− pF V
−
−
−
−
−
−
−
−−nC I
− pF f=1MHz
7
− ns
18
− ns
15
− ns
15
− ns
1.6
− nC
0.5
− nC V
0.9
=30V / VGS=0V
DS
=10V / ID=1mA
DS
=1.5A / VGS=4.5V
D
=1.5A / VGS=4.0V
D
=1.0A / VGS=2.5V
D
=10V / ID=1.0A
DS
=10V
DS
=0V
GS
ID=1A, VDD 15V
V
=4.5V
GS
R
=15Ω / RG=10Ω
L
15V
=4.5V
R
R
V
DD
GS
=1.5A
D
=10Ω
L
=10Ω
G
zBody diode characteristics (Source-Drain)
<Tr1. N-ch MOSFET>
Parameter Symbol
Forward voltage
∗Pulsed
Min. Typ. Max.
∗
V
SD
Unit
Conditions
−−1.2 V IS=3.2A / VGS=0V
Rev.B 2/5
Page 3
QS6M4
Transistors
zElectrical characteristics (T a=25°C)
<Tr2. P-ch MOSFET>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain)
<Tr2. P-ch MOSFET>
Parameter Symbol
Forward voltage
Rev.B 3/5
Min.−Typ. Max.
I
GSS
−±10 µAVGS= ±12V / VDS=0V
−20 −−VID= −1mA / VGS=0V
I
DSS
GS (th)
DS (on)
−−−1 µAV
−0.7 −−2.0 V V
− 155 215 I
∗
− 170 235 mΩ I
− 310 430 I
∗
Y
1.0 −−SV
fs
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 270 − pF V
iss
− 4035− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
10
−
12
−
45
−
20
−
3.0
−
0.8
−
0.85
−−nC I
Min. Typ. Max.
V
−−−1.2 V IS= −0.75A / VGS=0V
SD
Unit
= −20V / VGS=0V
DS
= −10V / ID=−1mA
DS
= −1.5A / VGS= −4.5V
D
= −1.5A / VGS= −4.0V
D
= −0.75A / VGS= −2.5V
D
= −10V / ID= −0.75A
DS
= −10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
= −0.75A, VDD −15V
I
D
V
= −4.5V
GS
R
=20Ω / RG=10Ω
L
− ns
− nC
− nC V
V
−15V
DD
= −4.5V
GS
= −1.5A
D
Unit
Conditions
RL=10Ω
R
=10Ω
G
Conditions
Page 4
Transistors
N-ch
zElectrical characteristic curves
1000
C
(pF)
100
10
CAPACITANCE : C
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
(A)
1
Ta=125°C
D
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
DRAIN CURRENT : I
0.001
0.0 0.5 1.0 1.5 2.0 2.5
GATE-SOURCE VOLTAGE : V
Fig.4
Typical Transfer Characteristics
10
(mΩ)
DS (on)
R
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
iss
C
rss
C
oss
Ta=25°C
f=1MHz
=0V
V
GS
DS
VDS=10V
Pulsed
GS
VGS=4.5V
Pulsed
QS6M4
1000
t
(ns)
SWITCHING TIME : t
(A)
f
100
t
d (off)
10
t
d (on)
t
r
1
0.01 0.1 1 10
DRAIN CURRENT : I
Ta=25°C
V
DD
V
GS
R
G
Pulsed
(A)
D
=15V
=4.5V
=10Ω
Fig.2 Switching Characteristics
1.0
0.9
(mΩ)
0.8
DS (on)
R
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0123456789
(V)
ID=1.5A
ID=0.75A
GATE-SOURCE VOLTAGE : V
Ta=25°C
Pulsed
GS
10
(V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
(mΩ)
DS (on)
R
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta= −25°C
VGS=4.0V
Pulsed
6
Ta=25°C
=15V
V
DD
(V)
5
=1.5A
I
D
GS
=10Ω
R
G
Pulsed
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
0 0.5 1.0 1.5 2.0
TOTAL GATE CHARGE : Qg (nC)
Fig.3
Dynamic Input Characteristics
10
Ta=125°C
(A)
Ta=75°C
s
Ta=25°C
1
Ta= −25°C
0.1
SOURCE CURRENT : I
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
Fig.6 Source Current vs.
Source-Drain Voltage
10
(mΩ)
DS (on)
R
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
VGS=0V
Pulsed
SD
VGS=2.5V
Pulsed
(V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
(A)
D
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
(A)
D
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
(A)
D
Rev.B 4/5
Page 5
Transistors
P-ch
zElectrical characteristic curves
1000
(pF)
100
CAPACITANCE : C
10
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
(A)
1
D
DRAIN CURRENT : −I
0.001
(mΩ)
DS (on)
R
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE : −V
Fig.4
Typical Transfer Characteristics
10000
Ta=125°C
Ta=75°C
1000
Ta=25°C
Ta= −25°C
Ta=25°C
f=1MHz
=0V
V
GS
C
C
C
DS
VDS= −10V
Pulsed
GS
V
=
−
GS
Pulsed
iss
oss
rss
(V)
4.5V
QS6M4
1000
t
(ns)
100
10
SWITCHING TIME : t
1
0.01 0.1 1 10
(V)
f
t
d (off)
t
d (on)
t
r
DRAIN CURRENT : −I
Ta=25°C
= −15V
V
DD
= −4.5V
V
GS
=10Ω
R
G
Pulsed
(A)
D
Fig.2 Switching Characteristics
500
(mΩ)
400
DS (on)
R
300
200
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
0
024681012
GATE-SOURCE VOLTAGE : −V
ID= −1.5A
ID= −0.75A
Ta=25°C
Pulsed
GS
(V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10000
(mΩ)
DS (on)
R
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
V
Pulsed
=
−
4V
GS
8
(V)
7
GS
6
5
4
3
2
1
GATE-SOURCE VOLTAGE : −V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
TOTAL GATE CHARGE : Qg (nC)
Fig.3
Dynamic Input Characteristics
10
(A)
S
1
0.1
SOURCE CURRENT : −I
0.01
0.0 0.5 1.0 1.5 2.0
SOURCE-DRAIN VOLTAGE : −V
Fig.6 Source Current vs.
Source-Drain Voltage
10000
(mΩ)
Ta=125°C
Ta=75°C
DS (on)
Ta=25°C
R
Ta= −25°C
1000
Ta=25°C
= −15V
V
DD
= −1.5A
I
D
=10Ω
R
G
Pulsed
Ta=25°C
=0V
V
GS
Pulsed
SD
VGS= −2.5V
Pulsed
(V)
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.1 1 10
DRAIN CURRENT : −I
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.1 1 10
(A)
D
DRAIN CURRENT : −I
(A)
D
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.1 1 10
DRAIN CURRENT : −I
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
(A)
D
Rev.B 5/5
Page 6
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
www.rohm.com
THE AMERICAS / EUPOPE / ASIA / JAPAN
Contact us : webmaster@ rohm.co. jp
Copyright © 2007 ROHM CO.,LTD.
21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Appendix1-Rev2.0
Loading...