Datasheet QRE1113.GR Datasheet (Fairchild Semiconductor)

REFLECTIVE OBJECT SENSOR

QRE1113.GR

PACKAGE DIMENSIONS

0.114 (2.90)

0.099 (2.50)

0.079 (2.0)

0.063 (1.60)

0.063 (1.60)

0.055 (1.40)

0.024 (0.61)
NOM (4X)

0.024 (0.60)

0.016 (0.40)

4

1 2

0.193 (4.90)

0.177 (4.50)

PIN 1 ANODE PIN 3 COLLECTOR

PIN 2 CATHODE

PIN 4 EMITTER

3

30°

0.043 (1.10)

0.035 (0.90)

0.130 (3.30)

0.122 (3.10)

SCHEMATIC

NOTES:

1. Dimensions for all drawings are in inches (millimeters).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

FEATURES

• Phototransistor output

• Tape and reel packaging

• No contact surface sensing

• Miniature package

• Lead form style: Gull Wing

© 2002 Fairchild Semiconductor Corporation

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REFLECTIVE OBJECT SENSOR

QRE1113.GR

ABSOLUTE MAXIMUM RATINGS

(T

= 25°C unless otherwise specified)

A

Parameter Symbol Rating Units

Operating Temperature T

Storage Temperature T

Soldering Temperature (Iron)

Soldering Temperature (Flow)

(2,3,4)

(2,3)

T

OPR

STG

T

SOL-I

SOL-F

-25 to +85 °C

-30 to +100 °C

240 for 5 sec °C

260 for 10 sec °C

EMITTER

Continuous Forward Current I

Reverse Voltage V

Peak Forward Current

Power Dissipation

(5)

(1)

F

R

I

FP

P

D

50 mA

5V

1mA

75 mW

SENSOR

Collector-Emitter Voltage V

Emitter-Collector Voltage V

Collector Current I

Power Dissipation

ELECTRICAL / OPTICAL CHARACTERISTICS

(1)

(T

= 25°C unless otherwise specified)

A

CEO

ECO

C

P

D

30 V

5V

20 mA

50 mW

PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS

INPUT DIODE

Forward Voltage I

Reverse Leakage Current V

Peak Emission Wavelength I

= 20 mA V

F

= 5 V I

R

= 20 mA

F

F

R

λ

PE

— 1.2 1.6 V

——10 µA

— 940 — nm

OUTPUT TRANSISTOR

Collector-Emitter Dark Current V

= 20 V, I

CE

= 0 mA I

F

D

——100 nA

COUPLED

On-State Collector Current I

Saturation Voltage V

Rise Time

Fall Time t

= 20 mA, V

F

V

= 5 V, I

CC

R

= 1K Ω

L

= 5 V I

CE

= 100 µA,

C(ON)

C(ON)

CE (SAT)

t

r

f

0.15 0.40 — mA

——0.3 V

— 20 —

— 20 —

µs

NOTES:

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16” (1.6mm) from housing.

5. Pulse conditions: tp = 100 µs; T = 10 ms.

© 2002 Fairchild Semiconductor Corporation

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TYPICAL PERFORMANCE CURVES

REFLECTIVE OBJECT SENSOR

QRE1113.GR

Fig. 1 Normalized Collector Current vs. Distance

between device and reflector

1.0

0.8

0.6

0.4

0.2

- NORMALIZED COLLECTOR CURRENT

C (ON)

I

0.0
012345

d-DISTANCE (mm)

IF = 10 mA

= 5 V

V

CE

= 25˚C

T

A

Sensing Object:
White Paper (90% reflective)

Mirror

0

d

Fig. 3 Collector Current vs. Collector to Emitter Voltage

2.0

d = 1 mm, 90% reflection

1.8

= 25˚C

T

A

1.6

1.4

1.2

1.0

0.8

0.6

- COLLECTOR CURRENT (mA)

0.4

0.2

C (ON)

I

0.0

0.1 1 10

VCE - COLLECTOR EMITTER VOLTAGE (V)

IF = 25mA

I

=20mA

F

=15mA

I

F

I

=10mA

F

I

=5mA

F

Fig. 2 Collector Current vs. Forward Current

1.0

(mA)

0.8

0.6

0.4

COLLECTOR CURRENT

-

0.2

C (ON)

I

0.0
0 4 8 12 16 20

IF - FORWARD CURRENT (mA)

Fig. 4 Collector Emitter Dark Current (Normalized)

vs. Ambient Temperature

2

10

Normalized to:

= 10 V

V

CE

= 25˚C

T

A

1

10

0

10

-1

10

- NORMALIZED DARK CURRENT

CEO

I

-2

10

25 40 55 70 85

TA - Ambient Temperature (˚C)

= 10 V

V

CE

= 5 V

V

CE

© 2002 Fairchild Semiconductor Corporation

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REFLECTIVE OBJECT SENSOR

QRE1113.GR

Fig. 5 Forward Current vs. Forward Voltage

50

TA = 25˚C

40

30

20

10

- FORWARD CURRENT (mA)

F

I

0

1.0 1.1 1.2 1.3 1.4 1.5

VF - FORWARD VOLTAGE (V)

Fig. 7 Forward Voltage vs. Ambient Temperature

3.0

2.5

2.0

1.5

1.0

- FORWARD VOLTAGE (V)

F

0.5

V

Fig. 6 Rise and Fall Time vs. Load Resistance

100

VCC = 10 V

= 100 us

t

pw

T=1ms

= 25˚C

T

A

IC = 0.3 mA

t

f

t

r

10

t

f

IC = 1 mA

t

RISE AND FALL TIME (us)

r

1

0.1 1 10

RL - LOAD RESISTANCE (KΩ)

IF = 50 mA

F = 20 mA

I

IF = 10 mA

© 2002 Fairchild Semiconductor Corporation

0.0

-40 -20 0 20 40 60 80

TA - AMBIENT TEMPERATURE (˚C)

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REFLECTIVE OBJECT SENSOR

QRE1113.GR

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

© 2002 Fairchild Semiconductor Corporation

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