QM800HA-24B
MITSUBISHI TRANSISTOR MODULES
QM800HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 800A
• V
CEX Collector-emitter voltage ......... 1200V
• h
FE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
145
19 28
9
BX
E
163
51 47 25
B
3728
27
E
C
9
27
6565
8–φ6.5
3973
74
74
42
C
BX
E
B
8
E
3–M4
44.5
47MAX.
16316334334
LABEL
2–M8
45
50MAX.
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M8
Mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
MITSUBISHI TRANSISTOR MODULES
QM800HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1200
1200
1200
7
800
800
5300
40
8000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~2.94
20~30
0.98~1.47
12~18
0.98~1.47
12~18
2100
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Parameter
Test conditions
CE=1200V, VEB=2V
V
CB=1200V,Emitter open
V
EB=7V, Collector open
V
I
C=800A, IB=1.06A
I
C=–800A (diode forward voltage)
C=800A, VCE=4.0V
I
CC=600V, IC=800A, IB1=1.6A, –IB2=16A
V
Transistor part
Diode part
Conductive grease applied
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
8.0
8.0
600
4.0
4.2
1.8
—
2.5
20
5.0
0.023
0.12
0.01
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM800HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
C (A)
1000
800
Tj=25°C
IB=1.06A
B
=4A
I
600
400
200
COLLECTOR CURRENT I
0
012345
B
=0.5A
I
IB=250mA
10
FE
10
DC CURRENT GAIN h
10
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
4
7
5
4
Tj=25°C
j
=125°C
T
VCE=4.0V
3
2
3
7
5
4
3
2
2
1
10
23457
10
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
B (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
1
10
7
5
4
3
2
10
, VBE (sat) (V)
CE (sat)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1
Tj=25°C
7
Tj=125°C
5
4
V
BE(sat)
3
2
2
23457
10
3
0
10
7
5
4
3
BASE CURRENT I
2
–1
10
2.6 3.0 3.4 3.8
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
VCE (sat) (V)
IC=600A
VOLTAGE
2
1
Tj=25°C
j
=125°C
COLLECTOR-EMITTER SATURATION
0
10
T
–2
10
–1
BASE CURRENT I
T
j
=25°C
VCE=4V
0
10
B (A)
4.2 4.6
I
C
=1000A
C
=800A
I
753275327532
10
0
10
7
5
4
V
CE(sat)
3
2
–1
10
1
10
SATURATION VOLTAGE V
23457 23457
10
IB=1.06A
2
10
3
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
3
10
C (A)
7
5
4
3
2
2
10
7
5
4
3
2
1
10
1
COLLECTOR REVERSE CURRENT –I
0 0.4 0.8 1.2 1.6 2.0
Tj=25°C
j
=125°C
T
COLLECTOR-EMITTER REVERSE VOLTAGE
CEO (V)
–V
Feb.1999
REVERSE BIAS SAFE OPERATING AREA
1600
Tj=125°C
C (A)
COLLECTOR CURRENT I
1200
IB=–16A
800
400
0
COLLECTOR-EMITTER VOLTAGE V
400 800 1200 1600
0
MITSUBISHI TRANSISTOR MODULES
QM800HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
CE (V)
Feb.1999
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