QM75DY-2H
MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 75A
• V
CEX Collector-emitter voltage ......... 1000V
• h
FE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
108
C
1
Tab#110, t=0.5
M5
(7.5)
B
E
E
B
B
2
E
2
2
34
1
1
10.5 13 10.5
6.5
23
C2E
1
E
2
2
C
1
E
1
B
1
37
30
(7.5)
93
12 46.5
C2E
1
E
φ6.5
23 23 5
8158
LABEL
2
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1000
1000
1000
7
75
75
500
4
750
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
250
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
CEX
I
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=1000V, VEB=2V
CB=1000V, Emitter open
V
EB=7V
V
I
C=75A, IB=1.5A
–I
C=75A (diode forward voltage)
C=75A, VCE=2.8V/5V
I
CC=600V, IC=75A, IB1=–IB2=1.5A
V
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Test conditions
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
100
2.5
3.5
1.8
—
2.5
15
3.0
0.25
1.2
0.13
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
C (A)
100
80
Tj=25°C
IB=1.5A
IB=1.0A
IB=0.5A
60
IB=0.2A
40
IB=0.1A
20
COLLECTOR CURRENT I
0
012345
10
7
5
3
FE
2
10
7
5
3
2
10
7
5
DC CURRENT GAIN h
3
2
10
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
4
Tj=25°C
T
j
=125°C
3
2
1
10
0
VCE=2.8V
1
10
444
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
B (A)
10
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
1
7
5
4
3
2
10
, VBE (sat) (V)SWITCHING TIME t
CE (sat)
1
7
5
4
3
2
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
V
BE(sat)
VCE=5.0V
2
10
3
10
753275327532
0
10
7
5
4
3
BASE CURRENT I
2
–1
10
1.8 2.2 2.6 3.0 3.4
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
VCE (sat) (V)
2
VOLTAGE
COLLECTOR-EMITTER SATURATION
IC=30A
1
0
–2
10
–1
10
444
BASE CURRENT I
0
VCE=2.8V
Tj=25°C
3.8
10
7
5
4
3
2
–1
10
0
10 23457110 23457210
SATURATION VOLTAGE V
IB=1.5A
V
Tj=25°C
j
T
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
10
7
5
3
IC=100A
IC=75A
IC=50A
Tj=25°C
T
j
=125°C
0
10
B (A) COLLECTOR CURRENT IC (A)
1
10
753275327532
2
1
10
on, ts, tf (µs)
7
5
3
2
0
10
7
5
3
2
–1
10
0
10
1
10
444
t
s
t
VCC=600V
IB1=–IB2=1.5A
f
10
2
CE(sat)
=125°C
t
on
Tj=25°C
j
=125°C
T
3
10
753275327532
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
REVERSE BIAS SAFE OPERATING AREA
CURRENT (TYPICAL)
2
10
7
5
4
(µs)
3
s, tf
2
1
10
VCC=600V
IB1=1.5A
IC=75A
ts
7
5
4
3
2
SWITCHING TIME t
0
10
–1
10 23457010 23457110
tf
Tj=25°C
j=125°C
T
160
140
C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I
120
100
IB2=–4A
80
60
40
20
COLLECTOR CURRENT I
Tj=125°C
0
0 200 400 600 800 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
3
10
7
5
3
C (A)
2
2
10
7
5
3
2
1
10
7
5
3
COLLECTOR CURRENT I
TC=25°C
2
NON-REPETITIVE
0
10 010
0
10
DC
1
10
444
COLLECTOR-EMITTER VOLTAGE V
1m
10
tw=50µS
100µS
200µ
S
S
2
3
10
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
80
70
60
50
40
30
20
10
0
0 16020
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
40 60 80 100 120 140
IB2=–2A
(°C/ W)
Zth (j–c)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10
0.32
1
10
327532
4
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
10
–3
–2
10
444
10
TIME (s)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
2
10
C (A)
Tj=25°C
7
5
4
j=125°C
T
3
2
1
10
7
5
4
3
2
0
–1
0
753275327532
10
10
0 0.4 0.8 1.2 1.6
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
CEO (V)
–V
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
800
700
600
500
400
CSM (A)
–I
300
200
100
0
0
10
SURGE COLLECTOR REVERSE CURRENT
10 75432
75432
1
10
2
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
2
10
VCC=600V
7
IB1=–IB2=1.5A
5
Tj=25°C
4
3
j
=125°C
T
2
1
10
7
(A), Qrr (µc)
Irr
5
4
3
2
0
10
0
10 23457110 23457210
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
2.0
10
0
23457
10
1
75324
1.6
1.2
(°C/ W)
0.8
Zth (j–c)
1
10
I
rr
0
10
Q
rr
t
rr
10
rr (µs)
t
–1
0.4
0
10
–3
–2
10
444
10
–1
TIME (s)
0
10
753275327532
Feb.1999
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